Method and equipment for rapid collection and purification of polycrystalline silicon through directional solidification of tailing
A technology of directional solidification and polysilicon, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of reduced industrial production costs, high cost of cutting equipment, and affecting purification effects, etc. The effect of reducing consumption and reducing process links
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Embodiment 1
[0024] like figure 1 The shown equipment for rapidly collecting and purifying polysilicon from directional solidification tailings is composed of a vacuum chamber 2 to form an outer wall, a vacuum pipeline 15 is installed on the outer wall, and one end of the vacuum pipeline 15 is connected to a vacuum pump group 14. The chamber draws a vacuum.
[0025] A ventilation line 13 is fixedly installed on the outer wall. The ventilation line is used to fill the vacuum chamber with gas, such as inert gas, etc. The water cooling plate 12 is movably installed at the bottom of the vacuum chamber 2. The graphite plate 11 can be raised or lowered according to the set speed. The graphite plate 11 is placed on the top of the water-cooling plate. There are 4 holes on the graphite plate 11. Sleeve connection, the graphite tray is provided with a card slot, which is conducive to the nested connection of the graphite strut with it.
[0026] The crucible 7 is placed on the graphite tray 9, the ...
Embodiment 2
[0033] Using the equipment described in Example 1 to take the tailings and purify polysilicon by directional solidification, firstly add silicon material with a purity of 99.0% cleaned by 90% of the crucible volume into the crucible 7, close the ventilation line 13, open the vacuum pump group 15, and The vacuum degree in the vacuum chamber 2 is pumped to 10Pa, the vacuum pump group 14 is closed, the ventilation pipeline is opened, and 99.91% argon is filled into the vacuum chamber 2, and the pressure reaches 500Pa, and the ventilation pipeline is closed;
[0034] The second step of smelting and solidification: turn on the power supply, use the induction coil 5 and the graphite heating element 6 to heat the silicon material in the crucible 7 to 1450 ° C to completely melt into a silicon melt, and keep it at this temperature for 30 minutes, and pull it vertically downward. The water cooling plate 12 makes the silicon melt in the crucible 7 move vertically downward at a uniform sp...
Embodiment 3
[0037] The equipment described in Example 1 is used to take the tailings and purify polysilicon by directional solidification. First, add silicon material with a purity of 99.3% cleaned by 92% of the crucible volume into the crucible 7, close the ventilation line 13, open the vacuum pump group 15, and The vacuum degree in the vacuum chamber 2 is pumped to 2Pa, the vacuum pump group 14 is closed, the ventilation pipeline is opened, and the purity of 99.96% argon is filled into the vacuum chamber 2, until the pressure reaches 5000Pa, and the ventilation pipeline is closed;
[0038] The second step of smelting and solidification: turn on the power supply, use the induction coil 5 and the graphite heating element 6 to heat the silicon material in the crucible 7 to 1550 ° C to completely melt into a silicon melt, and keep it at this temperature for 45 minutes. Pull down vertically The water-cooling plate 12 makes the silicon melt in the crucible 7 move vertically downward at a unifo...
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