Method and equipment for rapid collection and purification of polycrystalline silicon through directional solidification of tailing

A directional solidification, polysilicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of reduced industrial production cost, high cost of cutting equipment, affecting purification effect, etc. Consumption and reduce the effect of process links

Inactive Publication Date: 2014-04-30
QINGDAO NEW ENERGY SOLUTIONS
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the subsequent slow cooling process, the impurities in the high-concentration area will diffuse to the low-concentration area, so that the purity of silicon will gradually decrease with the prolongation of the holding time, which affects the purification effect, and in this case, the tail that needs to be removed The waste is as high as 25% to 35%, and the finished product rate is only 65-75%
At the same time, due to the relatively high hardness of silicon, high-power cutting equipment is needed to separate the purified silicon ingot from the ingot tailings with high impurity content at the tail. At present, wire cutting and diamond saw band cutting are generally used for cutting, but cutting The high cost of equipment and the large consumption of saw bands are not conducive to the reduction of industrial production costs. At present, there are few effective methods in China to facilitate the removal of tailings

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and equipment for rapid collection and purification of polycrystalline silicon through directional solidification of tailing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] like figure 1 The equipment used for the rapid collection and purification of polysilicon by directional solidification tailings shown has an outer wall formed by a vacuum chamber 2, and a vacuum pipeline 15 is installed on the outer wall. The chamber draws a vacuum.

[0025] A ventilation pipeline 13 is fixedly installed on the outer wall, and the ventilation pipeline is used to fill the vacuum chamber with gas, such as inert gas, etc., and the water cooling plate 12 is movably installed at the bottom of the vacuum chamber 2. It can rise or fall according to the set speed. The graphite plate 11 is placed on the top of the water cooling plate. There are 4 holes on the graphite plate 11. One end of the graphite pillar 10 is nested and connected with the graphite plate 11 through the hole, and the other end is nested with the graphite tray 9 Sleeve connection, there is a card slot on the graphite tray, which is conducive to the nested connection between the graphite pill...

Embodiment 2

[0033] Use the equipment described in Example 1 to take the tailings and carry out directional solidification to purify polysilicon. First, add silicon material with a purity of 99.0% of the volume of the crucible to the crucible 7, close the ventilation line 13, and turn on the vacuum pump group 15. The vacuum degree in the vacuum chamber 2 is pumped to 10Pa, close the vacuum pump group 14, open the ventilation pipeline, fill the vacuum chamber 2 with 99.91% argon until the pressure reaches 500Pa, and close the ventilation pipeline;

[0034] The second step of smelting and solidification: turn on the power, use the induction coil 5 and the graphite heating element 6 to heat the silicon material in the crucible 7 to 1450 ° C until it is completely melted into a silicon melt, keep it at this temperature for 30 minutes, and pull it vertically downward The water cooling plate 12 makes the silicon melt in the crucible 7 move vertically downward at a constant speed at a speed of 2.0...

Embodiment 3

[0037] Use the equipment described in Example 1 to take the tailings and carry out directional solidification to purify polysilicon. First, add silicon material with a purity of 99.3% to the crucible 7 with a volume of 92% of the crucible, close the ventilation line 13, and turn on the vacuum pump group 15. The vacuum in the vacuum chamber 2 is pumped to 2 Pa, the vacuum pump group 14 is closed, the ventilation pipeline is opened, and the vacuum chamber 2 is filled with argon gas with a purity of 99.96% until the pressure reaches 5000 Pa, and the ventilation pipeline is closed;

[0038] The second step of smelting and solidification: turn on the power, use the induction coil 5 and the graphite heating element 6 to heat the silicon material in the crucible 7 to 1550 ° C until it is completely melted into a silicon melt, keep it at this temperature for 45 minutes, and pull it vertically downward The water cooling plate 12 makes the silicon melt in the crucible 7 move vertically d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of metallurgy purification, and particularly relates to a method and equipment for directional solidification and purification of polycrystalline silicon through taking tailing. According to the method, under the inert gas shielding environment, abluent silicon is heated to be fully melted so as to carry out directional solidification; ingot pulling is stopped when solidification is completed by 85-90%, a graphite bent pipe is stretched into surplus unset silicon at the upper layer, then the other end of the graphite bent pipe is vacuumed through a vacuum unit, so that the surplus unset silicon at the upper layer enters the graphite bent pipe under the action of pressure difference and enters a water cooling collection box through the guide of the graphite bent pipe; heating is stopped after all the surplus unset silicon at the upper layer enters the water cooling collection box, and cast ingot solidified in a crucible is silicon cast ingot of high purity. Due to the method, back-diffusion of impurity is prevented, technology processes are reduced, and the yield of cast ingot is improved. The equipment is convenient to improve and install, and a tailing collection device can be used repeatedly, can collect more tailings, and is safe and reliable.

Description

technical field [0001] The invention belongs to the technical field of metallurgical purification, and in particular relates to a method and equipment for directional solidification and purification of polysilicon by tailing material extraction. Background technique [0002] The purification of silicon raw materials is an important link in the solar photovoltaic industry chain. The rapid development of the photovoltaic industry depends on high-efficiency and low-cost purification methods. Directional solidification technology has been widely used in many fields of metal purification, and has achieved remarkable results. In the process of purifying silicon raw materials, metal impurities whose segregation coefficient is far less than 1 will be enriched in the liquid phase during the directional solidification process and finally removed. This method is one of the key links in the current metallurgical preparation of solar-grade polysilicon, and is the most effective method f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/037
Inventor 谭毅姜大川安广野石爽邹瑞洵
Owner QINGDAO NEW ENERGY SOLUTIONS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products