1438results about How to "Reduced operating requirements" patented technology

There is provided a circuit for driving an organic light emitting diode (OLED). The circuit includes a current source for providing current to a first terminal of the OLED, and a generator for providing a variable voltage signal to a second terminal of the OLED to facilitate control of the current.

The present invention relates to the authentication of parties involved in transactions performed remotely over a network, such as the Internet. When a first party initiates a transaction with a second party, the second party can request authentication of the first party. Authentication is carried out by sending a communication to the first party, which includes a redirection to a transaction specific location,. At the transaction specific location the first party is required to approve the transaction as well as answer some identifying question or questions. If the transaction is approved and the question or questions answered correctly, the second party is informed that the transaction can be approved.

A method stores a plurality of sequentially ordered data samples in a plurality of sequential storage segments such that one of the plurality of sequentially ordered data samples is stored at one of the plurality of sequential storage segments which is non-sequential to another of the plurality of sequential storage segments in which an immediately preceding one of the plurality of sequentially ordered data samples is stored. Another one of the stored plurality of sequentially ordered data samples, other than a first ordered one of the plurality of sequentially ordered data samples, is overwritten with a further data sample, the further data sample being immediately sequential to a last ordered one of the plurality of sequentially ordered data samples.

This invention relates to a novel method for economically processing vacuum residue from heavy crude oils by selectively processing the difficult and easy components in reactors whose design and operating conditions are optimized for the specific feed. The process utilizes an integrated solvent deasphalting (SDA)/ebullated-bed design wherein the heavy vacuum residue feedstock is initially sent to an SDA unit operated with C₄/C₅ solvent to achieve a high deasphalted oil (DAO) yield. The resulting SDA products, namely asphaltenes and DAO are separately treated in ebullated-bed reactor(s) systems whose design and operating conditions are optimized for a particular feedstock. The resulting net conversion, associated distillate yield and product qualities are greatly improved relative to treatment of the entire residue feedstock in a common ebullated-bed reactor system.

A compact video image recording device which is mountable to a gun and useful for recording video images before and after the firing of the gun. The recording device includes a camera comprising a lens and a video image sensor. The video recording device is mounted on the gun such that the viewing area of the camera includes the target area of the gun. The video image sensor generates an electronic signal representative of a video image impinging the respective sensor. The output of the image sensor is processed and generally employed to produce frame data which are successively stored in successive frame locations of a semiconductor memory organized as a circular buffer memory while the video recording device is in an active state. Upon the firing of the gun, additional frames are stored in the buffer memory for a short period of time and a portion of the buffer memory is employed to preserve a video record of the shooting both before and after the event. Additional frames are successively stored in the unused portion of the buffer memory. In the event of a further firing of the gun, an additional portion of the buffer memory is dedicated to preserving the image data associated with subsequent firing incident. This process may be repeated until the buffer memory is full in the event the gun is repeatedly fired. A video record is thus generated which documents the circumstances preceding and following the firing of the gun.

A bandgap circuit comprising a current generation circuit and a current replication circuit is provided herein. The output current of the current generation circuit is generated as a weighted sum of two currents. The circuit configuration of the current generation circuit allows it to function at low power supply voltages, e.g., on the order of 1 V. The current replication circuit includes an operational amplifier, which when configured in conjunction with MOS cascode current sources and the current generation circuit, significantly increases the accuracy and insensitivity to power supply noise of the bandgap circuit output current. A resistor may be included between the bandgap circuit output node and ground for generating a reference voltage with increased accuracy and insensitivity to power supply noise.

Methods and systems for communication traffic control rule generation are provided. Configuration information for communication equipment, default information stored for the communication equipment, or both, is accessed. One or more parameters which affect processing of communication traffic by the communication equipment are determined from the accessed information and used to generate a communication traffic control rule to be applied to communication traffic at the communication equipment. The generated communication traffic control rule is applied at interfaces of the communication equipment to communication traffic being terminated by the communication equipment.

There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).

The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type contacts, and low-resistance surface electrodes. The device achieves high bandwidth by utilizing a buried insulating layer to isolate carriers generated in the underlying substrate, high quantum efficiency over a broad spectrum by utilizing a Ge absorbing layer, low voltage operation by utilizing thin a absorbing layer and narrow electrode spacings, and compatibility with CMOS devices by virtue of its planar structure and use of a group IV absorbing material. The method for fabricating the photodetector uses direct growth of Ge on thin SOI or an epitaxial oxide, and subsequent thermal annealing to achieve a high-quality absorbing layer. This method limits the amount of Si available for interdiffusion, thereby allowing the Ge layer to be annealed without causing substantial dilution of the Ge layer by the underlying Si.

An electromagnetic clutch (10) for an air conditioning compressor includes a generally cylindrical pulley (11) rotatably mounted on a compressor housing (16) and having an annular friction surface (21b), a driven member (12) mounted on a compressor shaft (13) and having an annular friction surface (21a) positioned radially adjacent the first friction surface to form an annular space (21c) therebetween. A quantity of flowable magnetic material (27) is provided in the annular space (21c) and a magnetic coil (34) is fixed on the housing adjacent thereto. A control (40,46,46') connected to the magnetic coil (34) supplies electrical power from a power supply (47) to energize the magnetic coil and create magnetic flux in the annular space (21c) polarizing the magnetic material and frictionally coupling the first and second friction surfaces (21a,21b) to cause the pulley (11) to rotate the driven member (12). The control (40,46,46') can pulse width modulate or ramp the supplied power for "soft" starting and/or stopping of the compressor.

Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities in order to provide a preselected workfunction. It is further disclosed how this, and further improvements for FET devices, such as raised source/drain and multifaceted gate on insulator, MODFET on insulator are integrated with strained Si based layer on insulator technology.

A method of wafer or substrate bonding a substrate made of a semiconductor material with a substrate made from a metallic material is disclosed. The method allows the bonding of the two substrates together without the use of any intermediate joining gluing, or solder layer(s) between the two substrates. The method allows the moderate or low temperature bonding of the metal and semiconductor substrates, combined with methods to modify the materials so as to enable low electrical resistance interfaces to be realized between the bonded substrates, and also combined with methods to obtain a low thermal resistance interface between the bonded substrates, thereby enabling various useful improvements for fabrication, packaging and manufacturing of semiconductor devices and systems.

Adsorbents and methods for the adsorptive separation of para-xylene from a mixture containing at least one other C₈ aromatic hydrocarbon (e.g., a mixture of ortho-xylene, meta-xylene, para-xylene, and ethylbenzene) are described. Suitable adsorbents comprise nano-size zeolite X having an average crystallite size of less than about 500 nanometers. The adsorbents provide both improved capacity and mass transfer, which is especially advantageous for improving productivity in low temperature, low cycle time adsorptive separation operations in a simulated moving bed mode.

A photodetector for use with relatively thin (i.e., sub-micron) silicon optical waveguides formed in a silicon-on-insulator (SOI) structure comprises a layer of poly-germanium disposed to couple at least a portion of the optical signal propagating along the silicon optical waveguide. Tight confinement of the optical signal within the waveguide structure allows for efficient evanescent coupling into the poly-germanium detector. The silicon optical waveguide may comprise any desired geometry, with the poly-germanium detector formed to either cover a portion of the waveguide, or be butt-coupled to an end portion of the waveguide. When covering a portion of the waveguide, poly-germanium detector may comprise a “wrap-around” geometry to cover the side and top surfaces of the optical waveguide, with electrical contacts formed at opposing ends of the detector.

An organic electroluminescent device includes a pair of electrodes; and an organic layer between the pair of electrodes, which comprises a light-emitting layer and contains a compound represented by the following formula (1):

wherein each of R¹ to R⁸ independently represents a hydrogen atom or a substituent, A represents an aromatic ring which may have a substituent, m represents an integer of 2 or greater, and n represents an integer of 1 or greater.

Corrugated flow field plates for use in fuel cells typically comprise a plurality of parallel open-faced fluid flow channels for the fuel cell reactants. Complex flow paths, such as serpentine flow paths, may be created in such corrugated flow field plates by incorporating channel couplings within the plate or by attaching coupling subassemblies to the plate. The plates are particularly suitable for use in solid polymer electrolyte fuel cells.

Apparatus and methods are described for a multi-level FeRAM memory device. Using write and read circuits associated with the memory device, multiple data states may be written to and read from the ferroelectric memory device which are associated with a single polarization direction, thereby allowing for a single cell to contain more than one bit of data.

The present invention provides for a one or more layer graphene optical modulator. In a first exemplary embodiment the optical modulator includes an optical waveguide, a nanoscale oxide spacer adjacent to a working region of the waveguide, and a monolayer graphene sheet adjacent to the spacer. In a second exemplary embodiment, the optical modulator includes at least one pair of active media, where the pair includes an oxide spacer, a first monolayer graphene sheet adjacent to a first side of the spacer, and a second monolayer graphene sheet adjacent to a second side of the spacer, and at least one optical waveguide adjacent to the pair.

A buffer manager that manages blocks of memory amongst multiple levels of buffer pools. For instance, there may be a first level buffer pool for blocks in first level memory, and a second level buffer pool for blocks in second level memory. The first level buffer pool evicts blocks to the second level buffer pool if the blocks are not used above a first threshold level. The second level buffer pool evicts blocks to a yet lower level if they have not used above a second threshold level. The first level memory may be dynamic random access memory, whereas the second level memory may be storage class memory, such as a solid state disk. By using such a storage class memory, the working block set of the buffer manager may be increased without resorting to lower efficiency random block access from yet lower level memory such as disk.