222results about How to "Reduce the effective area" patented technology

A valve prosthesis is adapted to operate in conjunction with native heart valve leaflets. The prosthesis includes an annulus and a skirt extending from the annulus. The skirt may be configured to be positioned through a native heart valve annulus, and the skirt may be movable between an open configuration permitting blood flow through the skirt and a closed configuration blocking blood flow through the skirt in cooperation with opening and closing of the native heart valve leaflets.

The present invention relates to a novel thermal-sensitive resistive apparatus, such as PTC and NTC, which allocates planar electrode films on the top and bottom surfaces of a prior art thermal-sensitive resistive apparatus, such as a PTC apparatus, to laminate with an outer electrode layer. A plurality of interconnection vias are electroplated with conductive material to connect to any plane. It is convenient to surface mount the apparatus of the present invention on a printed circuit board. The present invention can largely increase the dimensional stability of components and overcome the disadvantage that thermal diffusion of the prior are surface mounted resistive apparatus is affected easily by line width and environments.

Apparatus and methods are described for a multi-level FeRAM memory device. Using write and read circuits associated with the memory device, multiple data states may be written to and read from the ferroelectric memory device which are associated with a single polarization direction, thereby allowing for a single cell to contain more than one bit of data.

A solid-state imaging device includes: a pixel having a photodiode and a pixel transistor; a first isolation region using a semiconductor region containing impurities formed between neighboring photodiodes; and a second isolation region using an semiconductor region containing impurities formed between the photodiode and the pixel transistor, wherein an impurity concentration of the first isolation region is different from an impurity concentration of the second isolation region.

An improved self-retaining pressure sensor assembly includes a pressure sensor having a housing, a depending ported stem terminated in an enlarged foot, and a flanged resilient seal disposed about the stem between the pressure sensor housing and foot, with the seal flange having one or more notches about its circumferential periphery to ease insertion and extraction of the assembly with respect to a circular opening formed in a pressure vessel. The notches reduce the effective area of the flange, proportionately decreasing the force (insertion force) needed to insert the assembly at the time of installation and the force (extraction force) needed to subsequently remove the assembly for repair or replacement. The number and size of the notches can be adjusted to provide acceptable insertion and extraction forces, without lubricant, while not significantly compromising the self-retention capability of the assembly.

The invention relates to a dynamic sole pressure test insole with a multilayer sensing core structure, which comprises an insole, a signal conditioning unit, a data acquisition unit and a signal display unit, wherein a sensing core structural film sensor unit is embedded into the insole; the sensing core structural film sensor unit is formed by vertically overlapping at least two layers of polyvinylidene fluoride films, and a hard synthetic material film is embedded between contact faces of the sensing core structural film sensor unit and the insole; and the sensing core structural film sensor unit in the insole is connected with the signal conditioning unit, the data acquisition unit and the signal display unit which are sequentially connected in series. The signal-to-noise ratio of a PVDF piezoelectric film sensor and the corresponding lag quality of the test insole on dynamic signals are improved by adopting the multilayer sensing core structure and the design of the spaced material films; and the test insole can be put into various daily worn shoes to perform test, and can provide the basis for biomechanical analysis of human gait and comfort evaluation of shoes.

The present invention belongs to the field of membrane bioreactor, and is especially one mechanically cleaned membrane assembly. The membrane assembly includes membrane plate, water outlet branched pipe and aeration pipe. The membrane plate consists of membrane filament, membrane brush and water collecting pipe; the parallel membrane filaments and membrane brushes are arranged alternately; the membrane filament has its two ends connected to upper and lower water collecting pipes separately with the drained water being collected via membrane filament to two water collecting pipes; the water outlet branched pipe has one end connected to the water collecting pipe and the other end to the general water outlet pipe; the aeration pipe is connected to the branch and general aeration pipe; and gas is generated on two sides of the aeration pipe below the membrane plate and raises along the sides of the membrane plate. The membrane assembly is used in treating waste water with high flux.

The invention discloses a silicon carbide avalanche photodiode with a novel small-dip-angle half mesa structure, which is of an n-i-p structure or a p-i-n structure. The silicon carbide avalanche photodiode with the novel small-dip-angle half mesa structure is etched with a small angle beveled mesa from the top part to an i layer, wherein the small angle beveled mesa is cone-shaped with the top being small and the bottom being big, and the base angle of the small angle beveled mesa is less than 20 degrees. The silicon carbide avalanche photodiode with the novel small-dip-angle half mesa structure overcomes prejudices in the prior art, effectively reduces the length of the beveled mesa without changing the dip angle of the beveled mesa through reducing the depth of the beveled mesa, and effectively improves a fill factor of an SiC APD (avalanche photodiode) device, that is, an electric field peak around a SiC APD mesa can still be effectively restrained while improving the fill factor of the SiC APD device.

A method and system of supplying rodents, such as mice, to medical researchers pre-installs and / or embeds physiologic sensors onto or within the rodents prior to selling the modified rodents to the researchers. The specialty skills, such as small animal surgical and anesthesia skills and sensor placement and testing, are centralized in one organization rather than being spread about a collection of researchers. The subjects with preinstalled, pre-tested hardware, are sold to the researcher as needed. Communication hardware and software will be supplied for the user to convert their desktop computer into a wireless monitoring station. Additionally an external pulse oximeter for small rodents, such as mice, provides measurements on a hand or foot of the rodent with a sensor configured to avoid shunting around the rodent appendage, and configured for high heart rates (200-900 beats per minutes) of the subjects.

The invention discloses a micro reflector array manufacturing method which is used for manufacturing micro reflector array with high fill factors, big-angle torsion and big array. The method adopts bulk-silicon MEMS processing technology, a vertical comb driving mode, wafer bonding technology and etching technology and is characterized in that the wafer is bonded after a middle driver layer is processed, a layer of reflector surface is covered above the driver layer; on the basis, a special deep etching release technology is adopted to release a shore reserved in the driver layer to realize micro reflector torsion, thus realizing the purpose of driving with high fill factors, big-angle torsion and low voltage.

A method for designing a semiconductor integrated circuit is provided that is capable of a timing simulation that is approximate to an actual operation by reducing the effect of IR drop on the timing without reducing an effective area necessary for arrangement of elements or the number of pads that can be used other than power supply pads and without increasing the processing time. In a FF driving ability change procedure, a flip-flop having a delay time larger than a transition time from a state in which an IR drop occurs in a power supply voltage to a state of an ideal power supply voltage is substituted for an arbitrary flip-flop. Thus, a delay library considering IR drop may be produced previously only for the flop-flop, thus enabling a production time of the library to be reduced and improving the calculation accuracy of the delay time in the delay calculation procedure. Furthermore, the substitution of a flip-flop having a low driving ability enables the area to be reduced.

Apparatus and methods are described for a multi-level FeRAM memory device. Using write and read circuits associated with the memory device, multiple data states may be written to and read from the ferroelectric memory device which are associated with a single polarization direction, thereby allowing for a single cell to contain more than one bit of data.

FRAM includes a tunable gain amp serving as a local sense amp, wherein the tunable gain amp is connected to a local bit line for reading a memory cell including a pass transistor and a ferroelectric capacitor, and gain is adjusted by setting a local amp voltage for reading the memory cell more effectively with optimized gain. And a global sense amp is connected to the local sense amp for receiving a read output. When reading data, a voltage difference in the local bit line is converted to a time difference by the sense amps for differentiating high data and low data. For example, high data is quickly transferred to an output latch circuit through the sense amps with high gain, but low data is rejected by a locking signal based on high data as a reference signal. Additionally, alternative circuits and memory cell structures for implementing the memory are described.

A marine vessel propulsion device includes a bracket that is attachable to a marine vessel, a duct that is rotatable around a steering axis with respect to the bracket, a propeller that is rotatable with respect to the duct around a propeller axis extending in a direction perpendicular or substantially perpendicular to the steering axis, and an electric motor that rotates the propeller. The propeller includes a plurality of blades and a cylindrical rim that surrounds the plurality of blades, and is surrounded by the duct. The electric motor rotates the rim with respect to the duct.

The invention relates to the technical fields of surface plasmon optical waveguide structures and provides an antisymmetric-high energy mode surface plasmon optical waveguide structure capable of low-loss transmission for overcoming a large loss drawback of the conventional metal / media / metal waveguide transmission. The optical waveguide structure realizes a waveguide structure for supporting transmission in an antisymmetric-high energy mode by combining the refractive index difference between a plurality of high refractive index layers and a low refractive index substrate and a low refractive index covering layer and a surface plasmon effect of a metal layer and uses the low refractive index medium layers on two sides of the metal layer to reduce transmission loss, thereby realizing low-loss surface plasmon optical waveguide. Meanwhile, the optical waveguide structure has the advantages of small effective mode filed area and low loss can be used for manufacturing optical devices of a subwavelength size and ultra high integration level optical circuits.

The invention belongs to the technical fields of semiconductors, and particularly relates to an enhancement mode HEMT (high electron mobility transistor) device. According to the enhancement mode HEMT device, a reverse polarization layer is grown on the upper surface of a barrier layer between a grid electrode and a drain electrode; the reverse polarization layer and the barrier layer produce reverse polarization to form two-dimensional hole gas (2DHG) in heterojunction interface; the reverse polarization layer, barrier layer, buffering layer form polarization super junctions; meanwhile, a metal grid electrode is not positioned between a source electrode and the drain electrode any more, instead, an insulation gate electrode is formed by etching a groove in the edge of the source edge far from the drain electrode; on one hand, longitudinal conductive channels between the source electrode and two-dimensional electron gas (2DEG) are cut by the 2DHG; the magnetic field control on the conductive channels is realized by applying voltage on the groove gate electrode so as to realize the enhancement mode; and the regulation and control on the threshold value voltage can be realized by doping parts of the conductive channels; and on the other hand, the polarization super junctions between the gate electrode and the drain electrode assist to use up a drifting region in a blocked state so as to optimize the transverse electric field distribution of the device and improve the voltage resistance of the device.

The invention provides a semiconductor device and a manufacturing method thereof. An insulating ring penetrating through a substrate is formed in the substrate, and the substrate in the insulating ring serves as a first polar plate of a capacitor structure; a through hole is formed in the first polar plate, and a dielectric layer is formed on the side wall of the through hole and conducting layersare filled in the through hole; the first polar plate is led out through a leading-out structure, all conducting layers are electrically connected through a second leading-out structure and are led out, and second polar plates, connected in parallel via all conducting layers, of the capacitor structure are formed; the dielectric layer in the through hole is an insulating layer between polar plates of two capacitor structures, and the connection and use of the capacitor structures can be realized through the leading-out structures. The capacitor structures have a larger capacity, and meanwhile, the conducting layers in the through hole are connected in parallel through the leading-out structures to realize the capacitors of any required capacity, and the semiconductor device has better expandability, so that a capacitor structure with larger capacity can be formed on a smaller chip area, and the integration level of a chip is effectively improved.

A waterproof sound-transmitting membrane of the present disclosure includes: a non-porous resin film having formed therein a plurality of through holes extending through a thickness of the non-porous resin film; and a liquid-repellent layer formed on a principal surface of the resin film and having openings at positions corresponding to positions of the plurality of through holes. The through holes have a diameter of 4.0 μm or more and 12.0 μm or less, and the waterproof sound-transmitting membrane has a through-thickness air permeability of 2.0 cm3 / (cm2·second) or more and 50 cm3 / (cm2·second) or less in terms of Frazier number as measured according to JIS L 1096. With this waterproof sound-transmitting membrane placed over an opening of a housing of an electronic device or the like, entry of water into the housing from outside can be prevented, in addition to which the characteristics of sound transmitted through the membrane can be kept even when the membrane has a reduced effective area.

A liquid crystal display having a plurality of pixels includes liquid crystal layer disposed between first and second substrates, first and second polarization plates disposed on the said opposite to the side where the liquid crystal layer is disposed with respect to the first and second substrates. The second substrate includes a pixel electrode on the side of the liquid crystal layer. Each of the plurality of pixels including a reflection area and a transmission area is different from a ratio of the common electrode occupying an aperture in the reflection area in a place of the pixel and the ratio of the common electrode occupying the aperture in the reflection area is equal to or larger than 0% and smaller than 100%.

The invention belongs to the field of power semiconductor devices, and particularly relates to a reverse conducting MOS gate-controlled thyristor and a fabrication method thereof. The novel reverse conducting MOS gate-controlled thyristor provided by the invention can play a role of an electronic potential barrier when the current density is relatively low, so that the cell length of an N anode region is reduced; the effective area is reduced; the snapback effect is inhibited by greatly improving an anode short-circuit resistance; a P floating region also carries out hole emission towards an N drift region along with a voltage increase, so that conductivity modulation is carried out and the snapback effect is inhibited. Meanwhile, due to additionally introduced P floating region in reverse conduction, a parasitic PNPN structure is passed in conduction; the thyristor is conducted when a current reaches a certain magnitude; and the novel reverse conducting MOS gate-controlled thyristor also has high current conduction capability in the reverse direction.

The invention relates to the semiconductor technical field and specifically relates to a tunneling enhancement type HEMT device. A reverse polarization layer grows on the upper surface of a barrier layer between a source electrode and a drain electrode. The reverse polarization layer, the barrier layer and a buffer layer between the source electrode and the drain electrode form a double heterojunction. Two-dimensional hole gas (2DHG) and two-dimensional electron gas (2DEG) are respectively generated on the interface of the double heterojunction. A polarization super junction is thus formed. In a blocking state, the polarization super junction assists in exhausting a drift region to optimize the transverse field distribution of the device and improve the voltage withstanding of the device. Furthermore, source electrode metal contacts the barrier layer to form a Schottky barrier. Meanwhile, the source electrode and the reverse polarization layer contact to form ohm contact. The Schottky barrier between the source metal and the barrier layer blocks electrons from the source electrode to a 2DEG vertical conductive channel. When a voltage is added to a grid electrode, the Schottky barrier between the source electrode and the barrier layer is modulated. An electronic tunneling current is formed. The aim of enhancement is thus achieved.

A method for designing a semiconductor integrated circuit is provided that is capable of a timing simulation that is approximate to an actual operation by reducing the effect of IR drop on the timing without reducing an effective area necessary for arrangement of elements or the number of pads that can be used other than power supply pads and without increasing the processing time. In a FF driving ability change procedure, a flip-flop having a delay time larger than a transition time from a state in which an IR drop occurs in a power supply voltage to a state of an ideal power supply voltage is substituted for an arbitrary flip-flop. Thus, a delay library considering IR drop may be produced previously only for the flop-flop, thus enabling a production time of the library to be reduced and improving the calculation accuracy of the delay time in the delay calculation procedure. Furthermore, the substitution of a flip-flop having a low driving ability enables the area to be reduced.

Various embodiments provide inductor devices and fabrication methods. An exemplary inductor device can include a plurality of planar spiral wirings isolated by a dielectric layer. The planar spiral wirings can be connected by conductive pads formed over the dielectric layer and by conductive plugs formed in the dielectric layer. In one embodiment, a third planar spiral wiring can be formed over a second planar spiral wirings that is formed over a first planar spiral wiring. The third planar spiral wiring can be configured in parallel with the first third planar spiral wiring. The second planar spiral wiring can be configured in series with the first and third planar spiral wirings configured in parallel.

The invention discloses an intelligent turnover conveyor which comprises a conveying system, a swinging system, a rotating system, a power connection system and a control system, wherein the conveying system comprises two travel driving motors, a travel rail and a vehicle body; the vehicle body is slidably connected onto the travel rail; the two travel driving motors are connected through the vehicle body; a vehicle-mounted controller is mounted on the vehicle body; the swinging system comprises a chain wheel transmission mechanism, a swinging motor, a turnover shaft and a large swinging arm; the chain wheel transmission mechanism is connected onto the vehicle body of the conveying system; the turnover shaft is perpendicularly connected with the chain wheel transmission mechanism; the large swinging arm and the turnover shaft are in seal connection with each other through a flange; the large swinging arm can rotate along with the turnover shaft; the rotating system and the swinging system are connected with each other, and three-stage transmission is adopted for the connection; a vehicle body connecting frame used for being connected with the vehicle body is arranged on a turnover body; through the swinging system, the turnover body can swing in a pitching manner; and through the swinging system, the vehicle body can rotate at any angle in a vertical plane.

A method for testing bond strength of coating layer includes preparing cone-column integrated body and stepped support circle, using mechanical process to make end surface of big end on cone body in cone-column integrated body be on the same plane as end surface of small step body on stepped support circle, preparing tested coating layer on said plane, sticking a metal reinforced plate on coating layer, setting test piece directly on pressure tester to carry out push-press test form measuring out bond strength of coating layer. The test piece used in said method is also disclosed.

The invention provides a vehicle body rear structure. The vehicle body rear structure comprises a rear wheel cover outer plate; the rear wheel cover inner plate is arranged opposite to the rear wheelcover outer plate and connected with the rear wheel cover outer plate in a matched mode; the lower edge part of the rear suspension mounting plate is connected with the upper edge part of the rear wheel cover inner plate, and the side edge part of the rear suspension mounting plate is connected with the inner wall of the rear wheel cover outer plate; and the rear suspension reinforcing plate is arranged in the rear suspension mounting plate, the lower edge part of the rear suspension reinforcing plate is connected with the upper edge part of the rear wheel cover inner plate, and the rear suspension reinforcing plate forms a first columnar cavity between the rear wheel cover inner plate and the rear wheel cover outer plate. According to the rear structure of the vehicle body, through reasonable structural design, the problems of poor rigidity, strength and NVH (Noise Vibration and Harshness) performance of back-sliding type vehicles, steel-aluminum hybrid vehicles, vehicles without cross beams on rear floors and other types of vehicles are well solved while structural light weight is considered. The invention further provides a vehicle comprising the vehicle body rear structure.

The invention relates to a washing machine feeding apparatus which has the advantages of capability of softening hard water and electrolyzing soft water and then improving washing effect, capability of prolonging service life of an electrolysis unit, and non-necessity of throwing regenerants into a mollifier each time. The invention comprises a water inlet solenoid valve (5), and a regenerant dispenser (2) and the mollifier (1) which are respectively connected with a water outlet for regeneration (501) and a water outlet for softening (502) of the solenoid valve through pipes, and a control circuit board which is provided with a microprocessor CPU is arranged, wherein, an overfall gap (202) is arranged on the side face of a regenerant container (22) of the regenerant dispenser; a regenerant switch valve (3) is arranged at the bottom of the regenerant container (22); an outlet (302) of the regenerant switch valve is connected with a regenerant inlet (153) of the mollifier through a pipe; a water outlet (152) of the mollifier is connected with an electrolysis bath (4) through a pipe. The invention is suitable for being taken as a washing machine feeding apparatus.

The invention discloses a method for generating supercontinuum from the communication band to the middle infrared based on a silicon nitride waveguide. The method comprises the steps of step 1, using an ultrashort pulse light source to emit the light which has a frequency of 8-12MHz, and a central wavelength of 1.4-2.2 micrometer, step 2, conducting lens coupling of ultrashort femtosecond pulses which is then infused into a ridge / groove hybrid reverse silicon nitride waveguide with a flat light dispersion, wherein the structure of the silicon nitride waveguide comprises a silica oxide layer arranged on a silicon plate, the grooves containing a single silica ridge is formed on the surface of the silica. The silicon nitride waveguide applies the structure of the ridge / groove hybrid to make the effect area of the light field small, and achieve a big non-linear coefficient of the waveguide. After high peak power femtosecond optical pulses are introduced into the waveguide, non-linear processes of self phase modulation, cross phase modulation, four-wave mixing, soliton frequency shift, dispersive wave generation and the like occur, and finally the supercontinuum from the communication band to the middle infrared is formed.