Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

220results about How to "Reduce the effective area" patented technology

Enhancement mode HEMT (high electron mobility transistor) device

ActiveCN105140270AEasy to controlBig withstand voltage boostSemiconductor devicesHeterojunctionElectron
The invention belongs to the technical fields of semiconductors, and particularly relates to an enhancement mode HEMT (high electron mobility transistor) device. According to the enhancement mode HEMT device, a reverse polarization layer is grown on the upper surface of a barrier layer between a grid electrode and a drain electrode; the reverse polarization layer and the barrier layer produce reverse polarization to form two-dimensional hole gas (2DHG) in heterojunction interface; the reverse polarization layer, barrier layer, buffering layer form polarization super junctions; meanwhile, a metal grid electrode is not positioned between a source electrode and the drain electrode any more, instead, an insulation gate electrode is formed by etching a groove in the edge of the source edge far from the drain electrode; on one hand, longitudinal conductive channels between the source electrode and two-dimensional electron gas (2DEG) are cut by the 2DHG; the magnetic field control on the conductive channels is realized by applying voltage on the groove gate electrode so as to realize the enhancement mode; and the regulation and control on the threshold value voltage can be realized by doping parts of the conductive channels; and on the other hand, the polarization super junctions between the gate electrode and the drain electrode assist to use up a drifting region in a blocked state so as to optimize the transverse electric field distribution of the device and improve the voltage resistance of the device.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Semiconductor device and manufacturing method thereof

The invention provides a semiconductor device and a manufacturing method thereof. An insulating ring penetrating through a substrate is formed in the substrate, and the substrate in the insulating ring serves as a first polar plate of a capacitor structure; a through hole is formed in the first polar plate, and a dielectric layer is formed on the side wall of the through hole and conducting layersare filled in the through hole; the first polar plate is led out through a leading-out structure, all conducting layers are electrically connected through a second leading-out structure and are led out, and second polar plates, connected in parallel via all conducting layers, of the capacitor structure are formed; the dielectric layer in the through hole is an insulating layer between polar plates of two capacitor structures, and the connection and use of the capacitor structures can be realized through the leading-out structures. The capacitor structures have a larger capacity, and meanwhile, the conducting layers in the through hole are connected in parallel through the leading-out structures to realize the capacitors of any required capacity, and the semiconductor device has better expandability, so that a capacitor structure with larger capacity can be formed on a smaller chip area, and the integration level of a chip is effectively improved.
Owner:YANGTZE MEMORY TECH CO LTD

Tunneling enhancement type HEMT device

InactiveCN105118859ABig withstand voltage boostAvoid breakingSemiconductor devicesHeterojunctionContact formation
The invention relates to the semiconductor technical field and specifically relates to a tunneling enhancement type HEMT device. A reverse polarization layer grows on the upper surface of a barrier layer between a source electrode and a drain electrode. The reverse polarization layer, the barrier layer and a buffer layer between the source electrode and the drain electrode form a double heterojunction. Two-dimensional hole gas (2DHG) and two-dimensional electron gas (2DEG) are respectively generated on the interface of the double heterojunction. A polarization super junction is thus formed. In a blocking state, the polarization super junction assists in exhausting a drift region to optimize the transverse field distribution of the device and improve the voltage withstanding of the device. Furthermore, source electrode metal contacts the barrier layer to form a Schottky barrier. Meanwhile, the source electrode and the reverse polarization layer contact to form ohm contact. The Schottky barrier between the source metal and the barrier layer blocks electrons from the source electrode to a 2DEG vertical conductive channel. When a voltage is added to a grid electrode, the Schottky barrier between the source electrode and the barrier layer is modulated. An electronic tunneling current is formed. The aim of enhancement is thus achieved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Intelligent turnover conveyor

The invention discloses an intelligent turnover conveyor which comprises a conveying system, a swinging system, a rotating system, a power connection system and a control system, wherein the conveying system comprises two travel driving motors, a travel rail and a vehicle body; the vehicle body is slidably connected onto the travel rail; the two travel driving motors are connected through the vehicle body; a vehicle-mounted controller is mounted on the vehicle body; the swinging system comprises a chain wheel transmission mechanism, a swinging motor, a turnover shaft and a large swinging arm; the chain wheel transmission mechanism is connected onto the vehicle body of the conveying system; the turnover shaft is perpendicularly connected with the chain wheel transmission mechanism; the large swinging arm and the turnover shaft are in seal connection with each other through a flange; the large swinging arm can rotate along with the turnover shaft; the rotating system and the swinging system are connected with each other, and three-stage transmission is adopted for the connection; a vehicle body connecting frame used for being connected with the vehicle body is arranged on a turnover body; through the swinging system, the turnover body can swing in a pitching manner; and through the swinging system, the vehicle body can rotate at any angle in a vertical plane.
Owner:CHINA FIRST AUTOMOBILE

Vehicle body rear structure and automobile

The invention provides a vehicle body rear structure. The vehicle body rear structure comprises a rear wheel cover outer plate; the rear wheel cover inner plate is arranged opposite to the rear wheelcover outer plate and connected with the rear wheel cover outer plate in a matched mode; the lower edge part of the rear suspension mounting plate is connected with the upper edge part of the rear wheel cover inner plate, and the side edge part of the rear suspension mounting plate is connected with the inner wall of the rear wheel cover outer plate; and the rear suspension reinforcing plate is arranged in the rear suspension mounting plate, the lower edge part of the rear suspension reinforcing plate is connected with the upper edge part of the rear wheel cover inner plate, and the rear suspension reinforcing plate forms a first columnar cavity between the rear wheel cover inner plate and the rear wheel cover outer plate. According to the rear structure of the vehicle body, through reasonable structural design, the problems of poor rigidity, strength and NVH (Noise Vibration and Harshness) performance of back-sliding type vehicles, steel-aluminum hybrid vehicles, vehicles without cross beams on rear floors and other types of vehicles are well solved while structural light weight is considered. The invention further provides a vehicle comprising the vehicle body rear structure.
Owner:GUANGZHOU AUTOMOBILE GROUP CO LTD

Method for generating supercontinuum from communication band to middle infrared based on silicon nitride waveguide

The invention discloses a method for generating supercontinuum from the communication band to the middle infrared based on a silicon nitride waveguide. The method comprises the steps of step 1, using an ultrashort pulse light source to emit the light which has a frequency of 8-12MHz, and a central wavelength of 1.4-2.2 micrometer, step 2, conducting lens coupling of ultrashort femtosecond pulses which is then infused into a ridge/groove hybrid reverse silicon nitride waveguide with a flat light dispersion, wherein the structure of the silicon nitride waveguide comprises a silica oxide layer arranged on a silicon plate, the grooves containing a single silica ridge is formed on the surface of the silica. The silicon nitride waveguide applies the structure of the ridge/groove hybrid to make the effect area of the light field small, and achieve a big non-linear coefficient of the waveguide. After high peak power femtosecond optical pulses are introduced into the waveguide, non-linear processes of self phase modulation, cross phase modulation, four-wave mixing, soliton frequency shift, dispersive wave generation and the like occur, and finally the supercontinuum from the communication band to the middle infrared is formed.
Owner:XIAN UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products