Silicon carbide avalanche photodiode with novel small-dip-angle half mesa structure

A mesa structure, avalanche photoelectric technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of waste of chip area and low filling factor, and achieve the effect of increasing the effective area of ​​the chip, increasing the filling factor, and reducing the length.

Active Publication Date: 2015-09-02
苏州镓敏光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In order to solve the problem of low filling factor of SiC APD devices with small-angle inclined mesa, serious waste of chip area, suppression of peak electric field at the

Method used

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  • Silicon carbide avalanche photodiode with novel small-dip-angle half mesa structure
  • Silicon carbide avalanche photodiode with novel small-dip-angle half mesa structure
  • Silicon carbide avalanche photodiode with novel small-dip-angle half mesa structure

Examples

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Example Embodiment

[0038] Example 1

[0039] Such as image 3 As shown, with a small tilt angle half-mesa SiC APD structure, the device is fabricated on an n-type conductive SiC substrate. From the bottom to the top of the n-type conductive SiC substrate 102 are n-type SiC contact layer 103, i-type SiC avalanche layer 104, p-type SiC transition layer 105, and p+ type SiC contact layer 106; the mesa tilt angle θ is less than 20°, the mesa It only needs to be etched below the p-type SiC transition layer 105, and the bottom of the mesa is on the i-type SiC avalanche layer 104.

Example Embodiment

[0052] Example 2

[0053] Image 6 It is a schematic structural diagram of another small-tilt half-mesa SiC APD device proposed by the present invention, which is prepared on a p-type conductive SiC substrate material. Image 6 The device structure shown is the same as image 3 The conductive polarity of the SiC material from top to bottom of the device structure shown is exactly opposite, showing a symmetrical relationship. The basic components of the device include: p-type conductive SiC substrate 202 with a doping concentration greater than 1×10 17 cm -3 . A p-type SiC contact layer 105, an i-type SiC avalanche layer 104, an n-type SiC transition layer 103, and an n+-type SiC ohmic contact layer 206 are sequentially grown on the p-type conductive SiC substrate 202; among them, the p-type SiC contact layer 105 The average doping concentration should be between 1×10 17 -1×10 20 cm -3 The thickness is between 0-50μm; the average doping concentration of the i-type SiC avalanche ...

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Abstract

The invention discloses a silicon carbide avalanche photodiode with a novel small-dip-angle half mesa structure, which is of an n-i-p structure or a p-i-n structure. The silicon carbide avalanche photodiode with the novel small-dip-angle half mesa structure is etched with a small angle beveled mesa from the top part to an i layer, wherein the small angle beveled mesa is cone-shaped with the top being small and the bottom being big, and the base angle of the small angle beveled mesa is less than 20 degrees. The silicon carbide avalanche photodiode with the novel small-dip-angle half mesa structure overcomes prejudices in the prior art, effectively reduces the length of the beveled mesa without changing the dip angle of the beveled mesa through reducing the depth of the beveled mesa, and effectively improves a fill factor of an SiC APD (avalanche photodiode) device, that is, an electric field peak around a SiC APD mesa can still be effectively restrained while improving the fill factor of the SiC APD device.

Description

technical field [0001] The invention relates to a novel silicon carbide avalanche photodiode with a small-tilt half-mesa structure, which belongs to the technical field of semiconductor optoelectronic devices. Background technique [0002] The wide bandgap semiconductor represented by silicon carbide (SiC) is a new type of third-generation semiconductor material that has been researched and developed at home and abroad in recent years. It has a large bandgap, good thermal conductivity, high electron saturation drift speed and excellent chemical stability. Features, used for high temperature resistant, high-efficiency high-frequency high-power devices and photodetector devices working in the ultraviolet band, with significant material performance advantages, among which the 4H-SiC semiconductor in the SiC material system has a band gap of 3.23eV , is the preferred material for the preparation of visible light-blind UV detectors (response edge <400nm). Compared with tradit...

Claims

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Application Information

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IPC IPC(8): H01L31/107H01L31/0312
CPCH01L31/0312H01L31/107
Inventor 陆海李良辉杨森周东
Owner 苏州镓敏光电科技有限公司
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