Solid-liquid separation method and device for polycrystalline silicon ingot

A technology of solid-liquid separation and polysilicon, which is applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of low yield, waste of raw materials and energy, etc., and achieve high production efficiency and good product quality , Inhibit the effect of back diffusion

Inactive Publication Date: 2013-08-28
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, some researchers have disclosed several silicon solid-liquid separation and purification methods in the manufacture of high-purity polysilicon ingots: such as: patent application number 201210537365.9, the patent name is "a method and equipment for directional solidification and purification of polysilicon by vacuum extraction of tailings ” patent; the patent application number is 201310011153.1, and the patent name is “polysilico

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  • Solid-liquid separation method and device for polycrystalline silicon ingot

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Embodiment 1

[0037] figure 1 It is the device for separating the solid and liquid of polycrystalline silicon ingot of the present invention.

[0038] This embodiment discloses a device capable of realizing the solid-liquid separation method of polycrystalline silicon ingot silicon, such as figure 1 As shown, the equipment includes a quartz crucible 5, a pressure plate 3 matched with the cross-section of the quartz crucible 5, a vacuuming device, a furnace cover 2 and a furnace body 4 that are matched; the furnace cover 2 and the furnace body 4 can form a sealed The accommodating space is connected to the vacuuming equipment through the vacuum pipe 16, and the vacuuming equipment is a mechanical pump 14 and a Roots pump 15 in series; an ingot pulling device is provided at the lower end of the furnace body 4, and the quartz crucible 5 is fixed on the ingot pulling An induction coil 8 is fixed on the outside of the quartz crucible 5 on the equipment close to the inside of the furnace body 4. Th...

Embodiment 2

[0046] The solid-liquid separation of polycrystalline silicon ingot silicon using the same equipment as in Example 1 includes the following steps:

[0047] The first step: smelting the ingot

[0048] Fill the quartz crucible 5 with silicon material accounting for 93% of the volume of the quartz crucible, and the purity of the silicon material is 99.7%. Close the furnace cover 2 to make the inside of the furnace body 4 in a sealed state, and use the mechanical pump 14 and the Roots pump 15 to seal the inside of the furnace body 4 Evacuate the vacuum to 3Pa, heat the induction coil 8, use a thermocouple to keep the temperature in the quartz crucible 5 at 1000℃, and fill the furnace body 4 with 6×10 helium with a purity of 99.9% 4 Pa, again use the mechanical pump 14 and the Roots pump 15 to vacuum to 3 Pa, and fill the furnace body 4 with helium 6×10 4 Pa, use the induction coil 8 to raise the temperature in the quartz crucible 5 to 1550°C. The molten silicon material in the quartz ...

Embodiment 3

[0052] The solid-liquid separation of polycrystalline silicon ingot silicon using the same equipment as in Example 1 includes the following steps:

[0053] The first step: smelting the ingot

[0054] Fill the quartz crucible 5 with silicon material accounting for 95% of the volume of the quartz crucible, and the purity of the silicon material is 99.9%. Close the furnace cover 2 to make the inside of the furnace body 4 in a sealed state, and use the mechanical pump 14 and the roots pump 15 to seal the furnace body 4 Evacuate to 7Pa, heat the induction coil 8, use a thermocouple to keep the temperature in the quartz crucible 5 at 1200℃, and fill the furnace body 4 with argon gas 8×10 4 Pa, the mechanical pump 14 and the Roots pump 15 are used again to vacuum to 7 Pa, and the furnace body 4 is filled with argon gas 8×10 4 Pa, use the induction coil 8 to raise the temperature in the quartz crucible 5 to 1650°C. The molten silicon material in the quartz crucible 5 is kept in the insula...

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Abstract

The invention provides a solid-liquid separation method and device for a polycrystalline silicon ingot. The solid-liquid separation method comprises the following steps of: fusing a silicon material into a fused silicon material in a container, when carrying out ingot pulling until the quantity of silicon liquid in the fused silicon material is 10-20%, applying pressure to the fused silicon material by utilizing a press plate matched with the cross section of the container, and extruding the silicon liquid from the fused silicon material onto the press plate along a gap between the container and the press plate under the action of pressure; stopping applying pressure to the fused silicon material after the silicon liquid is completely extruded onto the press plate; and forming a high-purity ingot below the press plate. The invention further discloses the device for realizing the solid-liquid separation method for the polycrystalline silicon ingot. According to the solid-liquid separation method and the solid-liquid separation device, lots of disadvantages in the prior art are overcome; and when the separation between the enriched impurity melts and the high-purity ingot is guaranteed, the back diffusion is restrained, and the primary product yield in the polycrystalline silicon production is improved.

Description

Technical field [0001] The present invention relates to metallurgical purification technology, in particular, and a method and equipment for separating solid and liquid from polycrystalline silicon ingots. Background technique [0002] In recent years, there has been a shortage of solar-grade polysilicon raw materials with the rapid development of the photovoltaic industry, and people have turned their attention to the preparation of silicon raw materials. The preparation of polycrystalline silicon by metallurgical method uses a large amount of low-cost metallurgical grade silicon as raw materials to directly prepare solar-grade polycrystalline silicon, which has the characteristics of short production cycle, low pollution and low cost. The directional coagulation technology in metallurgy can not only be used for the preparation of solar-grade polysilicon ingots, but also can be used to remove metal impurities with small segregation coefficients in silicon, and has become the res...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
Inventor 谭毅姜大川石爽任世强
Owner DALIAN UNIV OF TECH
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