97results about How to "Play a passivation role" patented technology

The invention belongs to the field of anticorrosive coating, and in particular, relates to a graphene/deimpurity polyaniline-containing anticorrosive coating. The anticorrosive coating is composed of the following raw materials in parts by weight: 20-80% of epoxy resin, 5-15% of a graphene/deimpurity polyanilin composite material, 5-10% of a zinc powder, 5-10% of a filler, 1-10% of a coloring pigment, 0.1-3% of a dispersion agent, 0.1-3% of a wetting agent, 0.1-3% of a thickening agent, 0.1-1% of a levelling agent, 0.1-1% of a defoaming agent, 0.1-1% of a bactericide, and 1-35% of water. In the preparation process of the anticorrosive coating, polyaniline is loaded on graphene by an in-situ polymerization method, so that the dispersion of polyaniline is improved, polyaniline agglomeration is avoided, and the graphene/deimpurity polyaniline-containing anticorrosive coating is prepared.

The invention provides a terahertz quantum cascade laser device structure and a production method thereof. The terahertz quantum cascade laser device structure at least comprises a ridge waveguide structure, wherein the ridge waveguide structure comprises a semi-insulating GaAs substrate, a GaAs buffer layer, a lower contact layer, an active region, an upper contact layer, a heat-conducting insulating layer, an upper metal layer and a lower metal layer. By depositing the heat-conducting insulating layer and covering metal on the side surface of the device, a transverse heat dissipation channel is provided for a device, so that the device has stronger heat dissipation capability compared with THz QCL uncovered by metal on the sidewall. A flip chip packaging method is adopted, and a supporting substrate adopts a high heat-conductivity material such as silicon, so that the heat dissipation capability of the supporting substrate is improved compared with the normal semi-insulating GaAs substrate for packaging the device, and the supporting substrate has a relatively large electrode area and also is favorable for the heat dissipation of the device. The novel structure is used for improving the temperature characteristics and the energy efficiency of THz QCL, thus being favorable for working in a continuous or high-duty-cycle pulse state; the device can be produced by a standard semiconductor process, and the production method of the device is suitable for industrial mass production.

The invention relates to a modified polypropylene insulation material and a manufacturing method thereof, and the modified polypropylene insulation material includes the following components by weight part: 70-80 parts of polypropylene resin, 10-15 parts of polyolefin elastomer resin, 10-15 parts of thermoplastic hydrogenation butadiene styrene rubber, 0.5 parts of anti-oxidant A, 0.3 parts of anti-oxidant B, 0.3 parts of an anticopper agent and 0.1 parts of a rheological agent. The manufacturing method includes the following steps: metering the raw materials according to weight parts and putting in a mixer for uniformly mixing, then sending to a double screw extruder for blending and extruding, filtering and drawing into strips, and then cooling through a water tank and drying, putting in a pelleter for cutting into particles, and then packaging to obtain the finished product. The insulation material has the advantages of good performance, good high-and-low temperature performance, high strength and low cost, and is capable of being used in insulation of telecommunication cable, detection cable and oil pump cable; the manufacturing method has the advantages of reasonable design and convenient operation.

The invention relates to a specially doped perovskite solar cell and a preparation method thereof. The perovskite solar cell is sequentially provided with a transparent substrate, a conductive anode,a hole transport layer, a passivation doping layer, a perovskite active layer, an electron transport layer, a hole blocking layer and a metal cathode from bottom to top, the passivation doping layer is made of a two-dimensional perovskite precursor material or organic ammonium salt, and the thickness of the passivation doping layer is 0.1-10 nm. Compared with a traditional perovskite solar cell, the photoelectric conversion efficiency is higher, the water and oxygen blocking capacity is better, and the stability of the perovskite solar cell is better.

The invention discloses a preparation method of a back surface field of a back-passivated solar cell. The preparation method comprises the following steps. A base is provided, and a passivating layer is formed at the back of the base. Back surface field size is printed on part of the passivating layer, and an area, not being printed with the back electric size, of the passivating layer is of a hole-shaped array structure or a ditch-shaped array structure. Sintering of the base printed with the back surface field size is performed so as to form the back surface field, and meanwhile metal elements in the back surface field size are spread to the area printed with the back surface field size of the passivating layer so as to form a conductive layer. Accordingly, the invention also provides the passivating solar cell provided with the back surface field. The preparation method of the back surface field of the back-passivated solar cell and the back-passivated solar cell provided with the back surface field is capable of effectively simplifying preparation technology of the passivated solar cell, increasing toughness of the solar cell and reducing production cost of the solar cell.

The invention provides an N type IBC battery and a preparation method therefor. The preparation method for the N type IBC battery comprises the following steps: double faces of a silicon chip are polished, polished faces of the silicon chip are subjected to single face boron diffusion operation, HF acid is used for removing borosilicate glass, a front surface is flocked, a front surface of the silicon chip is subjected to phosphorus diffusion via use of a diffusion furnace, a PECVD device is used for plating silicon nitride on two faces of the silicon ship, a back surface of the silicon chip is perforated via laser, a perforated area of the back surface is corroded via alkali liquid, the silicon nitride is washed away via hydrofluoric acid, a phosphoric paste is printed on the back surface, cleaning operation is performed after the phosphoric slurry is driven in at a high temperature, silica and silicon nitride are grown on the front surface and the back surface of the silicon chip soas to perform passivation operation, a silver electrode and a silver-aluminium paste are printed on the back surface of the silicon chip, and one-time sintering operation is performed. According to the battery and the preparation method disclosed in the invention, an IBC battery structure can be prepared via simple equipment and technology, laser equipment and screen printing are used for preparing a main structure of the IBC battery; the battery and the method are simple in processing steps and low in cost and is suitable for large scale industrial production.

A technology for making metallic bellows includes providing annealed cold-rolling bright stainless steel band, rolling to become pipe shape, welding, cutting, shaping, cutting edge, surface treating in a treating liquid prepared from nitric acid and water, flushing with water and dewatering with alcohol. Its advantages are high productivity and quality.

The invention discloses a chemical mechanic buffing liquid of titanium potassium oxide phosphate, which comprises the following parts: 10-90 percent nanometer SiO2 sol, 0.5-10 percent inorganic alkaline and organic alkaline, 0.5-10 percent non-ionic surfactant, 0.5-10 percent chelant and deionized water. The invention can prevent surface fish tail effectively, which improves the surface flatness.

The invention relates to a PERC solar cell and a preparation method thereof. The preparation method of the PERC solar cell comprises the following steps that double-sided polishing, texturing, diffusion, etching, impurity glass removing and permanganate oxidation are performed on a silicon chip in turn; a passivation layer and a protective layer are deposited on the back surface; an antireflection layer is deposited on the front surface; and the local parts of the back surface are provided with openings, printing of front and back surface metal slurry is performing and sintering is performed so that the PERC solar cell is obtained. Compared with the conventional preparation method of the PERC solar cell, double-sided polishing is performed before texturing of the silicon chip so that subsequent texturing is facilitated by the preparation method of the PERC solar cell; meanwhile, the silicon chip of which impurity glass is removed is oxidized before the passivation layer and the protective layer are deposited on the back surface so that the passivation effect can be realized. Junction area recombination can be reduced, open-circuit voltage can be enhanced and product yield rate can be enhanced. Meanwhile, the preparation method of the PERC solar cell is high in the product yield rate based on the conventional process. Besides, the PERC solar cell is prepared according to the preparation method of the PERC solar cell.

The invention provides a manufacturing method of a back passivation solar cell. After an antireflection film is prepared on a silicon wafer, a back surface field with hollowed-out patterns is firstly formed, then a back passivation layer is formed, and afterwards, a positive electrode is formed. Through forming the back surface field before the back passivation layer, the step of laser grooving is saved, so that damage to the silicon wafer caused by laser grooving is avoided; and since the back surface field is in a hollowed-out structure, the contact area of the back surface field with the back passivation layer is reduced, so that the erosion degree of the back surface field over the back passivation layer is lightened, the back passivation layer can well play a passivation effect, recombination of current carriers on the back surface of the cell is reduced, and finally, the conversion efficiency of the back passivation solar cell can be improved. Since the step of laser grooving is not needed, the production process is simplified; since the back surface field is in the hollowed-out structure, the use amount of materials needed for manufacturing the back surface field is reduced, so that the production cost is lowered; and by using the back surface field in the hollowed-out structure, stress bending caused by differences of expansion coefficients of silicon and aluminum can be reduced, so that cell breakage caused by cell bending is reduced.

The invention discloses a chromium-free steel surface treating liquid. The chromium-free steel surface treating liquid comprises the following components in mass concentration: 0.1%-1.5% of titanium salt, 2%-15% of a vanadium compound, 5%-20% of fluoride, 1%-2% of water soluble resin, an acid, 0.5%-1.5% of molybdate, 2%-8% of sodium polyphosphate and the balance of water and other unavoidable impurities, wherein the acid is used for regulating the pH value of a passivation solution to be 3-4. A surface treating process of the chromium-free steel surface treating liquid is simple, easy to implement and low in cost; the chromium-free surface treatment can be completely carried out on steel plates on a traditional chromium treatment production line only by adding few auxiliary instruments or equipment, so that the wastewater treatment is simplified, the cost is lowered, and the economic benefit is remarkable.

The invention provides a controllable degrading magnesium-based metal material. The surface of the controllable degrading magnesium-based metal material is coated with biological active glass components modified by tannic acid, wherein the biological active glass components modified by tannic acid is formed by grafting nano biological active glass particles with tannic acid. By controlling the use amount of tannic acid grafted in the modified biological active glass components, adding amino structure compounds and controlling the coating thickness of biological active glass modified by tannic acid, the degrading time of the magnesium-based metal material can be effectively controlled.

The invention discloses a method for manufacturing a T-shaped grid of a GaN microwave device. The method comprises the following steps: (1) growing a high temperature dielectric layer on a GaN substrate, wherein the ingredient of the high temperature dielectric layer is Si3N4; (2) growing a low temperature dielectric layer on the upper surface of the high temperature dielectric layer, wherein the ingredient of the low temperature dielectric layer is SiOxNy; (3) photoetching a grid groove photoetched pattern in a required size on the low temperature dielectric layer, etching a grid groove on the low temperature dielectric layer and the high temperature dielectric layer through dry etching and removing the residual photoresist; (4) photoetching a grid cover photoetched pattern aligned with the grid groove on the low temperature dielectric layer; and (5) manufacturing a Schottky electrode on the GaN substrate in the grid cover pattern. By adopting the method, the grid length is easier to control and the reliability of the GaN microwave device is improved.

The invention discloses a machining device for a matt cable. The machining device comprises a sand blasting box, a centrifugal chamber and a high-pressure gas source. A sand guide pipe and a high-pressure gas pipe are arranged in the sand blasting box. The centrifugal chamber is arranged above the sand blasting box and communicated with the sand guide pipe. The high-pressure gas source is communicated with the high-pressure gas pipe. A cable inlet and a cable outlet are formed in the two sides of the sand blasting box respectively. Multiple baffles are arranged at the portion, between the cable inlet and the cable outlet, in the sand blasting box and distributed criss-cross in the cable conveying direction. One side of each baffle is provided with at least one spray gun, spray openings of the spray guns face the baffle faces, close to the conveyed cable, of the baffles, gaps allowing the cable to pass are reserved between the spray guns and the baffle faces of the baffles, each spray gun is provided with two inlets, one inlet of each spray gun is connected with the sand guide pipe, and the other inlet of each spray gun is connected with the high-pressure gas pipe. By the adoption of the machining device, the baffles are arranged criss-cross in the cable conveying direction, so that the situation that the cable swings and shakes due to blasting force in the sand blasting process, the sand blasting face is uneven, and conveyance is unstable is avoided.

The invention belongs to the field of soil and environment, and mainly relates to slow-release urea fertilizer comprising a heavy metal cadmium passivation agent and a preparation method. The fertilizer comprises urea, a biochemical inhibitor and a soil heavy metal cadmium passivation material according to a weight proportion of 1:0.001-0.1:0.05-0.5. The heavy metal cadmium passivation material comprises one or multiple of charcoal modified by hydrochloric acid, powdered rock phosphate modified by hydrochloric acid, sepiolite modified by hydrochloric acid and lime. Cadmium in medium-mild cadmium contaminated soil can be controlled within a reasonable range by applying the fertilizer for several times, so that cadmium absorbed by crops can be reduced, accumulative-state cadmium of the cropscan be reduced, and intake of cadmium content by people can be reduced; crop yield can be increased, and economic benefit can be increased.

The invention discloses an embedded dual restorer for heavy metal soil improvement, and belongs to the technical field of soil restoration, a microbial soil restoration agent can be periodically injected into an improver embedding box through cooperation of the improver embedding box and a plurality of U-shaped seepage rods, and the microbial soil restoration agent is guided into soil from a plurality of filter holes in the U-shaped seepage rods, so the diffusion balance degree of the microbial soil adsorbent is effectively improved; the microbial soil remediation agent has the effects of directly or indirectly improving soil, restoring soil fertility, preventing soil-borne diseases, maintaining rhizosphere microflora balance, degrading toxic and harmful substances and the like, and is matched with the attapulgite buried rod arranged on the outer side of the U-shaped material seeping rod; the attapulgite buried rod is matched with a plurality of heavy metal adsorption balls arranged outside the attapulgite buried rod in a sleeving mode, so the effects of gathering, adsorbing and passivating heavy metal in soil are achieved; the operation is easy, convenient and feasible, the improvement and adsorption are combined, and the remediation effect on the heavy metal soil is effectively improved to a certain degree.

The invention discloses aluminium wiring polishing fluid of the grand scale integration which is composed of the pH modifier 1-10%, the silica sol 10-90%, the surface active agent 0.5-5%, the oxidant 0.5-5% and the de-ionized water. The invention is in the condition of the alkali to use the strong complexation and chemical action, so the chemical reaction and the grinding speed are uniform. The grinding material is the SiO2 sol to solve the problem of the big hardness of the Al2O3 grinding material. The ether alcohol active agent can accelerate the mass transmission of the reactant and the resultant.