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N type IBC battery and preparation method therefor

An N-type, battery technology, applied in the field of solar cells, can solve the problems of many production equipment, high production cost, complex structure, etc., and achieve the effects of low cost, stable electrical performance, and simple process steps

Active Publication Date: 2018-09-14
锦州阳光能源有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to propose a method for preparing an N-type IBC battery, which has high efficiency and low cost, and can utilize traditional solar cells The production line is simply modified to complete the battery preparation

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  • N type IBC battery and preparation method therefor

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Embodiment 1

[0038] This embodiment discloses a method for preparing an N-type IBC battery, such as figure 2 The following steps are shown:

[0039] Step 1, the N-type silicon wafer is double-sidedly polished on the surface of the silicon wafer with hot alkali;

[0040] Step 2. Carry out single-sided boron diffusion on the polished surface of the silicon wafer to form a p+ region, the average junction depth is 0.7-0.9 microns, and its square resistance is 65-80Ω / □, and then remove the borosilicate glass with HF acid;

[0041] Step 3, making cashmere on the front surface;

[0042] Step 4. Use a high-temperature diffusion furnace to perform single-sided phosphorus diffusion on the front surface of the silicon wafer;

[0043] Step 5, using PECVD equipment to coat silicon nitride films on both sides of the silicon wafer;

[0044] Step 6, using a laser to open holes on the silicon nitride layer on the back surface of the silicon wafer;

[0045] Step 7, corroding the opening area on the bac...

Embodiment 2

[0051] This embodiment discloses a method for preparing an N-type IBC battery, comprising the following steps:

[0052] Step 1. Select an N-type silicon substrate with a resistivity of 1-8Ω·cm, remove the damaged layers on both sides of the silicon wafer by chemical etching, and polish both sides of the silicon wafer with an alkaline solution.

[0053]Step 2. Use the BBr3 source to diffuse the surface of the silicon wafer, insert the wafer back to back, and generate p on the surface of the silicon wafer + Area

[0054] Step 3. PECVD is used to deposit silicon nitride film on the boron-expanded surface of the silicon wafer, and a tank type alkali is used for texturing, and then the silicon nitride is cleaned with hydrofluoric acid.

[0055] Step 4. Use a high-temperature diffusion furnace to perform single-sided phosphorus diffusion on the front surface of the silicon wafer, and generate an n+ region on the front surface of the silicon wafer. The insertion method is back-to-ba...

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Abstract

The invention provides an N type IBC battery and a preparation method therefor. The preparation method for the N type IBC battery comprises the following steps: double faces of a silicon chip are polished, polished faces of the silicon chip are subjected to single face boron diffusion operation, HF acid is used for removing borosilicate glass, a front surface is flocked, a front surface of the silicon chip is subjected to phosphorus diffusion via use of a diffusion furnace, a PECVD device is used for plating silicon nitride on two faces of the silicon ship, a back surface of the silicon chip is perforated via laser, a perforated area of the back surface is corroded via alkali liquid, the silicon nitride is washed away via hydrofluoric acid, a phosphoric paste is printed on the back surface, cleaning operation is performed after the phosphoric slurry is driven in at a high temperature, silica and silicon nitride are grown on the front surface and the back surface of the silicon chip soas to perform passivation operation, a silver electrode and a silver-aluminium paste are printed on the back surface of the silicon chip, and one-time sintering operation is performed. According to the battery and the preparation method disclosed in the invention, an IBC battery structure can be prepared via simple equipment and technology, laser equipment and screen printing are used for preparing a main structure of the IBC battery; the battery and the method are simple in processing steps and low in cost and is suitable for large scale industrial production.

Description

technical field [0001] The invention relates to solar cell technology, in particular to an N-type IBC cell and a preparation method thereof. Background technique [0002] As China's population grows, and the urban population grows even more, the demand for energy will increase, and the damage and pollution to the environment will inevitably become more and more serious. China has an increasingly urgent need to find cleaner energy sources. Among the several common clean energy sources, solar energy resources are not only the most widely distributed on the earth, but also have the least impact on the natural environment, which is most in line with the current environmental protection concept, and can provide us with safe and reliable energy. The use of solar energy has become an important way for my country to solve the problem of increasing the proportion of clean energy. Among many solar cells, crystalline silicon solar cells can not only directly convert solar energy into...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/0216H01L31/18Y02P70/50
Inventor 谭鑫魏一黎晓璇刘爱民
Owner 锦州阳光能源有限公司
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