PERC solar cell and preparation method thereof

A technology of solar cells and permanganate, applied in the field of solar cells, can solve problems such as low yield rate of PERC solar cell products, waste of raw materials, unfavorable applications, etc., to increase open circuit voltage, increase product yield, and reduce junction area recombination Effect

Active Publication Date: 2016-04-13
HANS LASER TECH IND GRP CO LTD +1
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the product yield rate of PERC solar cells prepared by the above preparation m

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • PERC solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0025] The preparation method of the PERC solar cell of an embodiment, comprises the steps:

[0026] Carry out double-sided polishing, texturing, diffusion, etching, impurity-removing glass, and permanganate oxidation on silicon wafers in sequence;

[0027] Deposit passivation layer and protective layer on the back;

[0028] Anti-reflective layer deposited on the front;

[0029] Partially opening the back, printing the metal paste on the front and the back, and sintering to obtain a PERC solar cell.

[0030] Among them, the silicon wafer is preferably P-type polysilicon, that is, the method for preparing the PERC solar cell of the present invention is suitable for solar cells made of P-type polysilicon wafers.

[0031] In the double-sided polishing step, it is preferable to use an inorganic alkali solution for double-sided polishing. For example, sodium hydroxide solution is used, but not limited thereto, other inorganic alkali solutions can also be used. The single-side p...

Embodiment 1

[0044] Polish the P-type polysilicon wafer on both sides in a sodium hydroxide solution for 5 minutes. At this time, the thickness reduction after polishing on one side is 10 μm;

[0045] Texturing the above-mentioned polished P-type polysilicon wafers by plasma etching;

[0046] Diffusion of the P-type polysilicon wafer after the above-mentioned texture is carried out by the spin coating method, and the diffusion square resistance is 80ohm / sq;

[0047] Perform Rena removal of the back electrode on the diffused P-type polysilicon wafer;

[0048] Put the above-mentioned P-type polycrystalline silicon chip after removing the back electrode into a permanganic acid solution with a volume fraction of 70%, and maintain it at 75°C for 15 minutes to obtain an oxidized P-type polycrystalline silicon chip;

[0049]On the back of the oxidized P-type polysilicon wafer, deposit an aluminum oxide layer and a silicon nitride film in sequence, and deposit a silicon nitride anti-reflection fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a PERC solar cell and a preparation method thereof. The preparation method of the PERC solar cell comprises the following steps that double-sided polishing, texturing, diffusion, etching, impurity glass removing and permanganate oxidation are performed on a silicon chip in turn; a passivation layer and a protective layer are deposited on the back surface; an antireflection layer is deposited on the front surface; and the local parts of the back surface are provided with openings, printing of front and back surface metal slurry is performing and sintering is performed so that the PERC solar cell is obtained. Compared with the conventional preparation method of the PERC solar cell, double-sided polishing is performed before texturing of the silicon chip so that subsequent texturing is facilitated by the preparation method of the PERC solar cell; meanwhile, the silicon chip of which impurity glass is removed is oxidized before the passivation layer and the protective layer are deposited on the back surface so that the passivation effect can be realized. Junction area recombination can be reduced, open-circuit voltage can be enhanced and product yield rate can be enhanced. Meanwhile, the preparation method of the PERC solar cell is high in the product yield rate based on the conventional process. Besides, the PERC solar cell is prepared according to the preparation method of the PERC solar cell.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a PERC solar cell and a preparation method thereof. Background technique [0002] A solar cell, also known as a photovoltaic cell, is a semiconductor device that directly converts the sun's light energy into electrical energy. Its power generation principle is based on the photovoltaic effect of the semiconductor PN junction. Because it is a green product, does not cause environmental pollution, and is a renewable resource, solar cells are a new energy source with broad development prospects in today's energy shortage situation. [0003] Partial Contact Rear Passivation (PERC) solar cell is a newly developed high-efficiency solar cell. With the continuous advancement of technology, its conversion efficiency has exceeded the current stable efficiency of 19%, and has attracted widespread attention in the industry. Its core is to cover the backlight surface of the silicon wafer with an a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02167H01L31/18Y02E10/50Y02P70/50
Inventor 张为国刘超刘成法张松陈寒夏世伟季海晨
Owner HANS LASER TECH IND GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products