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96 results about "Permanganic acid" patented technology

Permanganic acid is the inorganic compound with the formula HMnO₄. This strong oxoacid has been isolated as its dihydrate. It is the conjugate acid of permanganate salts. It is the subject of few publications and its characterization as well as its uses are very limited.

Adhesive film for use in multilayer printed wiring board and method of producing multilayer printed wiring board

The present invention provides a laminating method, when a multilayer printed wiring board is produced according to a build-up technique, for easily introducing an insulating layer that, under the lamination conditions, allows filling a resin inside a through hole and / or a via hole simultaneously with laminating a circuit board, is low in the thermal expansion coefficient of a formed insulating layer, and, after roughening a surface of the insulating layer, is excellent in the adhesiveness with a conductor layer that is formed according to plating. The present invention also provides a method of forming the insulating layer; and a method of producing the multilayer printed wiring board; and furthermore an adhesive film that is used in these methods. The laminating method is a method of laminating a circuit board characterized in that the adhesive film formed by laminating a resin composition layer made of the following A layer and B layer on a support base film; Layer A is a layer of a thermosetting resin composition that contains an epoxy resin having two or more epoxy groups in one molecule and an epoxy curing agent, has an inorganic filler content of from 0 to less than 40% by weight, has a cured surface obtained by thermally curing which after roughening with an alkaline permanganic acid solution, allows forming a conductor layer according to the plating, and is solid at ambient temperature, and; Layer B is a layer of a thermosetting resin composition that contains an epoxy resin having two or more epoxy groups in one molecule and an epoxy curing agent, has an inorganic filler content of 40% by weight or more, and is solid at ambient temperature; Layer A is laminated adjacent to the support base film; Layer B layer has a fluidity that allows under lamination conditions the filling of a resin into a through hole and / or a via hole simultaneously with the lamination of the circuit board; and The lamination is carried out while keeping the B layer directly in contact with the circuit board.
Owner:AJINOMOTO CO INC

Method for recovering organic acid and cobalt-manganese metal in terephthalic acid oxidized residues

The invention belongs to the technology for recovering organic acid and catalyst from terephthalic acid oxidized residues, which includes the steps of firstly, discharging high-temperature oxidized residues from a pure terephthalic acid (PTA for short) production device, controlling the solid content within the range from 20% to 45% and implementing primary filtering separation within the temperature range from 55 DEG C to 90 DEG C, and directly vending separated solid for manufacturing resin or paint or returning the separated solid to an oxidation reactor for use, wherein primary filtrate is treated according to the process: (I) adding oxalic acid to obtain cobalt-manganese oxalate precipitation, obtaining cobalt-manganese oxalate by means of filtering separation, further cooling the filtrate by means of filtering separation, utilizing the separated solid for extracting benzoic acid and delivering the filtrate to a waste water treating device; or (II) directly cooling the primary filtrate for secondary filtering separation, utilizing the separated solid for extracting benzoic acid, adding oxalic acid into secondary filtrate to obtain cobalt-manganese oxalate precipitation, obtaining cobalt-manganese oxalate by means of filtering separation and delivering the filtrate to a waste water treating device; and secondly, carrying out reaction of the cobalt-manganese oxalate obtained from (I) or (II) with oxidant such as hydrogen peroxide, peroxyacetic acid, bromine, manganate, permanganic acid, manganese dioxide or / and hydrobromic acid, utilizing cobalt acetate aqueous liquor, cobalt bromide aqueous liquor, manganese acetate aqueous liquor, manganese bromide aqueous liquor, acetic acid or / and pure water as dissolvent, then carrying out reaction of the cobalt-manganese oxalate with metallic cobalt, metallic manganese or / and hydrobromic acid after the cobalt-manganese oxalate is completely dissolved, and obtaining homogeneous phase liquor containing cobalt-manganese bromide ions by means of purification and filtration, wherein the mixed liquor can be directly mixed with cobalt acetate, manganese acetate, cobalt bromide, manganese bromide, acetic acid or water to serve as oxidation catalyst for the terephthalic acid.
Owner:浙江上虞利星化工有限公司

Etching liquid for conductive polymer, and method for patterning conductive polymer

The object is to provide an etching liquid for a conductive polymer having excellent etching capability toward a conductive polymer, and a method for patterning a conductive polymer employing the etching liquid for a conductive polymer. The conductive etching liquid of the present invention is selected from the group consisting of (1) an etching liquid comprising greater than 0.5 wt % but no greater than 70 wt % of (NH4)2Ce(NO3)8 or at least 0.5 wt % but no greater than 30 wt % of Ce(SO4)2, (2) an etching liquid comprising greater than 0.5 wt % but no greater than 30 wt % of (NH4)4Ce(SO4)4, (3) an etching liquid comprising a hypochlorous acid salt aqueous solution having an effective chlorine concentration of at least 0.06 wt % and a pH of greater than 3 but less than 8, (4) an etching liquid comprising nitrosyl chloride which comprises at least 5 wt % of hydrochloric acid and at least 20 wt % of nitric acid, a (hydrochloric acid concentration+0.51×nitric acid concentration) value being no greater than 35 wt %, and a (hydrochloric acid concentration+0.5×nitric acid concentration) value being at least 30 wt %, (5) an etching liquid comprising at least 3 wt % but no greater than 40 wt % of a bromic acid compound and at least 4 wt % of an inorganic acid, (6) an etching liquid comprising at least 6 wt % but no greater than 40 wt % of a chloric acid compound and at least 7 wt % of a hydrogen halide, (7) an etching liquid comprising at least 0.001 wt % but no greater than 20 wt % of a permanganic acid compound, and (8) an etching liquid comprising at least 3 wt % but no greater than 30 wt % of a hexavalent chromium compound.
Owner:TSURUMISODA +1

Method for electroplating metal on surface of insulating base material

The invention relates to a method for electroplating metal on the surface of an insulating base material. The method comprises the following steps that the surface of the insulating base material makes contact with a water-soluble anionic compound, so that a modified surface is produced; the modified surface makes contact with an aqueous solution containing permanganate ions, so that a manganese dioxide adsorption layer is formed on the modified surface; a conducting polymer layer is formed on the surface of the manganese dioxide adsorption layer; and electroplating is carried out on the surface of the conducting polymer layer, and thus a metal layer is formed. According to the method, the anionic compound is deposited on the surface of the insulating base material so as to form a coatinglayer tightly combined with the surface of the base material, after the modification and adsorption, an even film with a certain thickness is formed on the surface, thus, under the metal electroplating liquid and electroplating condition are the same, the deep plating capacity and dispersing capacity of the electroplating liquid can be greatly improved, the obtained metal plating layer has the characteristics of being flat, even and good in backlighting effect, and the hole breakout phenomenon and the phenomenon that certain parts of the electroplating metal layer in holes are too thin are avoided.
Owner:GUANGDONG TONESET SCI & TECH

Method for plating metal on surface of insulating base material

The invention relates to a method for plating a metal on the surface of an insulating base material. The method comprises the following steps: alternately touching the surface of the insulating base material with polycations and polyanions to produce a modified surface; touching the modified surface with an aqueous solution containing permanganate ions to form a manganese dioxide adsorption layeron the modified surface; forming a conductive polymer layer on the surface of the manganese dioxide adsorption layer; and performing plating on the surface of the conductive polymer layer to form a metal layer. According to the method, by means of the alternate deposition of the polycations and polyanions on the surface of the insulating base material to form a firmly combined coating layer withthe surface of the base material, after a thin film with a certain thickness is uniformly formed on the surface by means of the modification and adsorption, under the same metal plating solution and plating conditions, the deep plating ability and the dispersing ability of the plating solution are greatly improved, the obtained metal plating layer has the characteristics of flatness, uniformity and good backlight effect, and the phenomena of hole breakage and that the Plating metal layer at a certain site in the hole is too thin are avoided.
Owner:GUANGDONG GUANGHUA SCI TECH +1

Method for treating soil cadmium-arsenic combined pollution by using multifunctional manganese-based material

The invention belongs to the technical field of environmental protection, and particularly discloses a method for treating soil cadmium-arsenic combined pollution by using a multifunctional manganese-based material. The method specifically comprises the steps: uniformly mixing the multifunctional manganese-based material with cultivated land soil; a preparation method of the multifunctional manganese-based material is prepared by the following steps: uniformly mixing a potassium permanganate aqueous solution with zeolite, and stirring to obtain a turbid liquid; heating the turbid liquid for reaction, drying to obtain a manganese-based material after the reaction is finished, and compounding the manganese-based material with limestone to obtain the multifunctional manganese-based material.According to the invention, permanganate is loaded on a zeolite mineral material, so that the oxidation and release rate of permanganate is reduced, and the long-term effect of permanganate in soil arsenic oxide and cadmium and arsenic immobilization is improved; Mn<2+> ions can also improve the antagonism of crops such as rice and the like on cadmium, and remarkably reduce the absorption of cropssuch as rice and the like on cadmium and the toxic action of cadmium on rice.
Owner:GUANGDONG INST OF ECO ENVIRONMENT & SOIL SCI
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