Chemical mechanical polishing sizing agent

A chemical mechanical and polishing slurry technology, applied in the direction of polishing compositions, chemical instruments and methods, polishing compositions containing abrasives, etc., can solve problems such as high pinhole corrosion, high dielectric erosion, and low product yield , to achieve the effect of reducing corrosion, reducing dielectric erosion, and reducing defects

Inactive Publication Date: 2010-03-31
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Their polishing objects have high pinhole corrosi

Method used

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  • Chemical mechanical polishing sizing agent
  • Chemical mechanical polishing sizing agent
  • Chemical mechanical polishing sizing agent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～18

[0016] Table 1 shows the chemical mechanical polishing slurry formulations of Examples 1-18. According to the components and their contents listed in Table 1, add them to the reactor and stir evenly, add deionized water to dilute to 100% by weight of the polishing slurry, and finally use a pH regulator (20% KOH or dilute HNO) 3 , Choose according to the needs of pH value) Adjust to the required pH value and continue to stir to a uniform fluid, and stand still for 30 minutes to obtain a chemical mechanical polishing slurry.

[0017] Table 1. Composition and content of chemical mechanical polishing slurry in Examples 1-18

[0018]

[0019]

[0020] The beneficial effects of the present invention will be further explained through the effect examples below.

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PUM

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Abstract

The invention discloses a chemical mechanical polishing sizing agent comprising oxidant containing two groups of oxidants, wherein one group is selected from one or a plurality of permanganate and soluble salt thereof, and the other group is selected from one or a plurality of nitric acid and soluble salt thereof. The chemical mechanical polishing sizing agent of the invention increases the absolute removal speed of metal by mutual action of oxidant permanganic acid radical and bitrate radical as well as abrasive particles, improves selection ratio of relative removal speed of dielectric, canlower metal pinhole corrosion, lowers dielectric corrosion produced in the metal planarization process, obviously lowers defects and improves product yield.

Description

Technical field [0001] The invention relates to a polishing slurry, in particular to a chemical mechanical polishing slurry. Background technique [0002] The planarization technology in the integrated circuit (IC) manufacturing process has become one of the indispensable key technologies that are as important as lithography and etching and depend on each other. The chemical mechanical polishing (CMP) process is currently the most effective and mature planarization technology. The chemical mechanical polishing system is a chemical mechanical planarization technology that integrates cleaning, drying, on-line detection, end point detection and other technologies. It is the product of the development of integrated circuit ICs to miniaturization, multilayer, planarization, and thinning. It is an integrated circuit The necessary technology to improve production efficiency, reduce costs, and flatten wafers globally. CMP is widely used in the field of IC manufacturing, and polishing o...

Claims

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Application Information

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IPC IPC(8): C09G1/18C09G1/02
Inventor 徐春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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