Polishing slurry for metal chemical mechanical polishing, and use thereof

Abstract

The invention discloses polishing slurry for metal chemical mechanical polishing, and use thereof. The polishing slurry contains oxidants, abrasive particles and a carrier, wherein the oxidants are selected from one or more of permanganic acid, manganic acid and soluble salts thereof, and the polishing slurry preferably comprises one or more water-soluble oxidants of which the oxidation-reductionpotential is higher than divalent manganese ions, except for peroxides. By means of the action of permanganic acid, manganic acid or soluble salts thereof, the polishing slurry produces synergistic effect preferably through the permanganic acid, the manganic acid or the soluble salts thereof and another oxidant to increase the absolute removal rate of metal and reduce the use of polishing particles, thereby reducing cost and the absolute removal rate of dielectric layers and obviously decreasing defects, scratches, stains and other residue. In addition, the polishing slurry has small relativeremoval rate selectivity of dielectric substances during planarization, can prevent dielectric erosion generated during metal planarization, and can improve product yield.

Description

technical field [0001] The invention relates to a polishing slurry, in particular to a polishing slurry for metal chemical mechanical polishing and its application. Background technique [0002] In the integrated circuit (IC) manufacturing process, planarization technology has become one of the indispensable key technologies that are equally important and interdependent with photolithography and etching. The chemical mechanical polishing (CMP) process is currently the most effective and mature planarization technology. The chemical mechanical polishing system is a chemical mechanical planarization technology integrating cleaning, drying, online detection, end point detection and other technologies. An essential technology for improving production efficiency, reducing costs, and global flattening of wafers. CMP is widely used in the field of IC manufacturing, and the polishing objects include substrates, dielectrics and interconnect materials. Among them, metal CMP is one ...

AI Technical Summary

Problems solved by technology

[0004] Therefore, the technical problem to be solved in the present invention is to provide a polishing slurry for metal chemical mechanical polishing and its application in view of the shortcomings of the existing polishing liquid for metal chemical mechanical polishing. The polishing slurry polishes the object Low substrate surface contamination, low dielectric erosion, and high product yield

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