N-type double-sided battery and manufacturing method thereof

A double-sided cell and manufacturing method technology, applied in the field of solar energy, can solve the problems of poor P-type surface passivation effect, easy damage to PN junction, difficult process control, etc. Effect

Inactive Publication Date: 2015-04-22
SUZHOU TALESUN SOLAR TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the method of silicon nitride has a poor passivation effect on the P-type surface because silicon nitride is positively charged; High consumption and easy to damage the formed PN junction morphology, the process is difficult to control

Method used

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  • N-type double-sided battery and manufacturing method thereof
  • N-type double-sided battery and manufacturing method thereof
  • N-type double-sided battery and manufacturing method thereof

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Embodiment Construction

[0042] The technical solutions in the embodiments of the present invention will be described in detail below, obviously, the described embodiments are only some of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0043] The manufacturing method of N-type double-sided battery of the present invention comprises the following steps:

[0044] S1. Treat the upper and lower surfaces of the N-type silicon wafer with an alkaline solution;

[0045] S2. Uniformly coat the boron source on the upper surface of the N-type silicon wafer by spin coating or screen printing, and carry out boron diffusion in the furnace tube;

[0046] S3. remove the borosilicate glass, and make a mask on the surface of the diffused boron;

[0047] S4. Phosphorus is diffused o...

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Abstract

The invention discloses an N-type double-sided battery and a manufacturing method thereof. The manufacturing method comprises the following steps that S1, texturing treatment is performed; S2, a boron source is evenly coated on the upper surface of an N-type silicon wafer in a spin coating or silk-screen printing mode, and boron diffusion is conducted in a furnace tube; S3, a mask is manufactured; S4, phosphorus diffusion is conducted on the lower surface of the N-type silicon wafer, and a high-low-junction structure is formed on the lower surface; S5, phosphorosilicate glass and the mask manufactured in the step S3 are removed; S6, a passivation anti-reflection film made from aluminum oxide and silicon nitride is manufactured on the surface of the diffused boron, and a silicon nitride passivation anti-reflection film is manufactured on the surface of the diffused phosphorus; S7, electrodes are manufactured. The manufacturing method of the N-type double-sided battery is simple in process, and the efficiency of the battery is effectively improved. In addition, a passivation layer manufacturing method of the N-type double-sided battery is a low-temperature process, and a PN junction is not damaged.

Description

technical field [0001] The invention relates to the technical field of solar energy, in particular to an N-type bifacial battery and a manufacturing method thereof. Background technique [0002] Both N-type batteries and P-type batteries belong to solar cells. Compared with P-type batteries, N-type batteries have the advantages of high minority carrier life, higher battery efficiency, and no light-induced attenuation effect. For the double-sided N-type battery, the back side can also absorb the light scattered around, thereby generating additional electricity, so the power generation of the N-type double-sided battery is much higher than that of the traditional P-type single-sided battery. [0003] At present, in the process of N-type double-sided cells, the gas carries boron tribromide vapor for diffusion. In order to ensure that the boron source has enough space to spread on the silicon wafer, the production capacity will be limited. Moreover, in the above-mentioned diffu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068H01L31/0352H01L31/0216H01L21/228
CPCH01L21/228H01L31/0216H01L31/0352H01L31/042H01L31/1876H01L31/02167H01L31/02168H01L31/0684H01L31/1804Y02E10/547Y02P70/50
Inventor 魏青竹陆俊宇连维飞倪志春
Owner SUZHOU TALESUN SOLAR TECH CO LTD
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