Aluminium wiring polishing fluid for super large scale integrated circuit

A large-scale integrated circuit and polishing liquid technology, which is applied in the direction of circuits, polishing compositions, electrical components, etc., can solve the problems of high corrosion of acidic slurry, metal ion contamination, low selectivity, etc., and achieve good dispersion, Effect of reducing pollution and high concentration

Inactive Publication Date: 2006-11-15
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention aims to solve the problems of high corrosion, low selectivity, low rate, high cost, contamination by metal ions, and difficult cleaning of acidic slurry existing in the chemical mechanical polishing process of existing aluminum wiring, and discloses a chemically powerful, Alkaline polishing solution for VLSI multilayer aluminum wiring with fast removal rate, no pollution, no scratches, easy cleaning and low cost

Method used

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Examples

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Embodiment 2

[0036] Example 2 is used to describe the preparation process of the present invention:

[0037] Take 15~25nm SiO 2 Sol 2000g (concentration 10%), put 1600g of deionized water while stirring, and pour into the above liquid while stirring 146g of FA / O activator. Then take 154 g of ethylenediaminetetraacetic acid tetrakis (tetrahydroxyethylethylenediamine) and stir evenly to obtain 4000g of polishing liquid for VLSI multilayer aluminum wiring.

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PUM

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Abstract

The invention discloses aluminium wiring polishing fluid of the grand scale integration which is composed of the pH modifier 1-10%, the silica sol 10-90%, the surface active agent 0.5-5%, the oxidant 0.5-5% and the de-ionized water. The invention is in the condition of the alkali to use the strong complexation and chemical action, so the chemical reaction and the grinding speed are uniform. The grinding material is the SiO2 sol to solve the problem of the big hardness of the Al2O3 grinding material. The ether alcohol active agent can accelerate the mass transmission of the reactant and the resultant.

Description

Technical field [0001] The present invention relates to the technical field of chemical mechanical polishing, in particular to a polishing solution for aluminum wiring of ultra-large-scale integrated circuits. Background technique [0002] In the chemical mechanical polishing of ULSI multilayer aluminum wiring, global and local flatness is very important. As the size of the substrate develops from Φ200mm to Φ300mm, the surface flatness and roughness after polishing have an increasing influence on the surface state of the aluminum wire after polishing. The surface flatness and roughness directly affect the next layer of aluminum wiring, the breakdown characteristics of the circuit, the interface state and the minority life, and it is directly related to the performance quality and yield of the IC device. [0003] For integrated circuits with feature sizes above 0.13μm, the aluminum CMP process is a very important part of the multi-layer wiring process. The aluminum remaining outsi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/14H01L21/768
Inventor 刘玉岭牛新环
Owner HEBEI UNIV OF TECH
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