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Terahertz quantum cascade laser device structure and production method thereof

A technology of quantum cascade and device structure, applied in laser parts, lasers, phonon exciters, etc., can solve problems such as poor heat dissipation, and achieve the effect of improving heat dissipation and strong heat dissipation.

Active Publication Date: 2015-04-22
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a terahertz quantum cascade laser device structure and its manufacturing method, which are used to solve the problems existing in the working process of the terahertz quantum cascade laser in the prior art. The problem of poor heat dissipation

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  • Terahertz quantum cascade laser device structure and production method thereof
  • Terahertz quantum cascade laser device structure and production method thereof
  • Terahertz quantum cascade laser device structure and production method thereof

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Embodiment 1

[0045] see figure 1 , the present invention provides a terahertz quantum cascade laser device structure, the terahertz quantum cascade laser device structure at least includes: a ridge waveguide structure 11; the ridge waveguide structure 11 includes a semi-insulating GaAs substrate 6, a GaAs buffer layer 5. Lower contact layer 4, active region 3, upper contact layer 2, thermally conductive insulating layer 7, upper metal layer 1 (ie, upper electrode) and lower metal layer 8 (ie, lower electrode); wherein, the semi-insulating GaAs lining The bottom 6, the GaAs buffer layer 5, the lower contact layer 4, the active region 3 and the upper contact layer 2 are stacked sequentially from bottom to top, and the active region 3 and the upper contact layer 2 are formed on the lower contact layer 4 Ridge structure; the upper metal layer 1 covers the top and both sides of the ridge structure; the thermally conductive insulating layer 7 is located on both sides of the ridge structure, and ...

Embodiment 2

[0063] This embodiment also provides a method for fabricating a terahertz quantum cascade laser device structure, such as Figure 5 As shown, the manufacturing method of the terahertz quantum cascade laser device structure includes the following steps:

[0064] Step 1: growing a buffer layer, a heavily n-type doped lower contact layer, an active region, and an n-type heavily doped upper contact layer on a semi-insulating GaAs substrate;

[0065] Step 2: For the first photolithography, the ridge waveguide is etched by a dry or wet etching process to form a ridge waveguide structure and a lower electrode support structure;

[0066] Step 3: growing a thermally conductive insulating layer on the ridge waveguide structure and the lower electrode supporting structure by plasma-enhanced chemical vapor deposition (PECVD), the material of the thermally conductive insulating layer is preferably silicon, and the thermally conductive insulating layer The thickness of the upper electrode ...

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Abstract

The invention provides a terahertz quantum cascade laser device structure and a production method thereof. The terahertz quantum cascade laser device structure at least comprises a ridge waveguide structure, wherein the ridge waveguide structure comprises a semi-insulating GaAs substrate, a GaAs buffer layer, a lower contact layer, an active region, an upper contact layer, a heat-conducting insulating layer, an upper metal layer and a lower metal layer. By depositing the heat-conducting insulating layer and covering metal on the side surface of the device, a transverse heat dissipation channel is provided for a device, so that the device has stronger heat dissipation capability compared with THz QCL uncovered by metal on the sidewall. A flip chip packaging method is adopted, and a supporting substrate adopts a high heat-conductivity material such as silicon, so that the heat dissipation capability of the supporting substrate is improved compared with the normal semi-insulating GaAs substrate for packaging the device, and the supporting substrate has a relatively large electrode area and also is favorable for the heat dissipation of the device. The novel structure is used for improving the temperature characteristics and the energy efficiency of THz QCL, thus being favorable for working in a continuous or high-duty-cycle pulse state; the device can be produced by a standard semiconductor process, and the production method of the device is suitable for industrial mass production.

Description

technical field [0001] The invention belongs to the technical field of laser semiconductors, and relates to a terahertz quantum cascade laser, in particular to a terahertz quantum cascade laser device structure and a manufacturing method thereof. Background technique [0002] The terahertz (hereinafter referred to as THz, 1 THz=1012 Hz) band refers to the frequency in the electromagnetic spectrum from 100 GHz to 10 THz, and the corresponding wavelength is from 3 millimeters to 30 microns, which is the electromagnetic spectrum region between millimeter waves and infrared light. . The THz radiation source is a key device for the application of THz technology. Among many THz radiation generation methods, THz quantum cascade laser (hereinafter referred to as THz QCL) is one of the main structures used for THz radiation sources due to its advantages of high energy conversion efficiency, small size, portability and easy integration. Among them, THz QCLs with good temperature cha...

Claims

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Application Information

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IPC IPC(8): H01S5/343H01S5/024
Inventor 姚辰曹俊诚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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