The invention provides a
terahertz quantum cascade laser device structure and a production method thereof. The
terahertz quantum cascade laser device structure at least comprises a
ridge waveguide structure, wherein the
ridge waveguide structure comprises a semi-insulating GaAs substrate, a GaAs buffer layer, a lower
contact layer, an active region, an upper
contact layer, a heat-conducting insulating layer, an upper
metal layer and a lower
metal layer. By depositing the heat-conducting insulating layer and covering
metal on the side surface of the device, a transverse heat dissipation channel is provided for a device, so that the device has stronger heat dissipation capability compared with THz QCL uncovered by metal on the sidewall. A
flip chip packaging method is adopted, and a supporting substrate adopts a
high heat-
conductivity material such as
silicon, so that the heat dissipation capability of the supporting substrate is improved compared with the normal semi-insulating GaAs substrate for packaging the device, and the supporting substrate has a relatively large
electrode area and also is favorable for the heat dissipation of the device. The novel structure is used for improving the temperature characteristics and the energy efficiency of THz QCL, thus being favorable for working in a continuous or high-duty-cycle pulse state; the device can be produced by a standard
semiconductor process, and the production method of the device is suitable for industrial
mass production.