Semiconductor packaging structure and forming method thereof

一种封装结构、成型方法的技术，应用在半导体器件、半导体/固态器件制造、半导体/固态器件零部件等方向，能够解决集成电路引线框架散热片散热功能有限等问题，达到防止芯片的破裂、加速散热、减少作业流程的效果

Inactive Publication Date: 2014-01-22
GREAT TEAM BACKEND FOUNDRY (DONGGUAN) LTD
View PDF9 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The integrated circuit lead frame heat sink has limited heat dissipation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor packaging structure and forming method thereof
  • Semiconductor packaging structure and forming method thereof
  • Semiconductor packaging structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] refer to Figure 1 to Figure 5 , a semiconductor packaging structure molding method, it comprises the following steps:

[0042] Prepare the lead frame 1: a semi-etched area 23 is provided around the chip holder 21 of the lead frame 1, the first pin 22 is connected to the chip holder 21, and the electrode of the chip holder 21 is directly connected to the first pin 22, and the first pin 22 is connected to the first pin 22. The pin 22 is provided with a first tin climbing hole 24, and the lead frame 1 is also provided with a positioning groove 25, a pin identification hole 26 and a first connecting rod 27;

[0043] Welding the chip 3: using the bonding material 5 to weld the chip 3 on the chip holder 21;

[0044] Prepare the heat sink frame 2: the heat sink frame 2 is provided with a back half-etched area 41 and a front half-etched area 42, and is provided with a second pin 43 and a third pin 44, and the second pin 43 and the third pin The pins 44 are all provided with ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a semiconductor packaging structure and a forming method thereof. The semiconductor packaging structure comprises a radiating fin frame and a lead frame, wherein the radiating fin frame is connected with a radiating fin, a chip is stuck on a chip holder of the lead frame, the radiating fin is connected with the chip through a combining material, the lead frame is provided with a first pin, and second pins and a third pin are arranged on the radiating fin frame. The forming method of the semiconductor packaging structure comprises the following steps: the second pins and the third pin are arranged on the radiating fin, the first pin is connected with a bottom electrode of the chip holder as a current input end; three second pins on the radiating fin frame are connected with an electrode on the upper surface of the chip as current output ends; the third pin on the radiating fin frame is welded with a lead as a current control end, so that application of the lead is greatly reduced, a work flow is reduced and the heat dissipation is accelerated; after injection molding, colloids are exposed on the two faces of a semiconductor, so that the double-faced heat dissipation is realized, and a radiating function of the semiconductor is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor packaging, and in particular relates to a semiconductor packaging structure and a molding method thereof. Background technique [0002] In recent years, semiconductor devices have become more and more integrated, and their storage capacity, signal processing speed and power have developed rapidly, but their volume has become smaller and smaller. This trend has accelerated the rapid development of semiconductor integrated circuits. Among them, the lead frame is the skeleton of the semiconductor integrated circuit. As the chip carrier of the integrated circuit or discrete device, the lead frame is a key structure that realizes the electrical connection between the lead-out end of the internal circuit of the chip and the external lead by means of a bonding gold wire, and forms an electrical circuit. Components, which act as a bridge to connect with external wires. A lead frame is mainly composed of two ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/495H01L21/50H01L21/60
CPCH01L2224/32245H01L23/49537H01L23/49562H01L2224/40245H01L2924/00014H01L23/49568H01L2924/14H01L2224/33181H01L2224/83132H01L2224/75272H01L2224/75703H01L24/83H01L24/75H01L2224/83007H01L2224/26175H01L2224/8321H01L2224/83862H01L24/32H01L24/33H01L23/544H01L2223/54426H01L2223/54486H01L2224/83801H01L2224/29101H01L24/29H01L2224/37099H01L2924/00012H01L2924/014H01L21/56H01L23/3107H01L24/36H01L24/40H01L2224/84801H01L24/00H01L21/4825H01L21/4839H01L21/4842H01L23/49548
Inventor 曹周
Owner GREAT TEAM BACKEND FOUNDRY (DONGGUAN) LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap