Electrode plate and semiconductor device

A technology of electrode sheets and semiconductors, applied in semiconductor devices, electric solid devices, semiconductor/solid device components, etc., can solve problems such as mismatching expansion coefficients, chip damage, etc., and achieve the effect of strong heat dissipation

Active Publication Date: 2021-09-17
捷捷半导体有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of this application is to provide an electrode sheet to solve the problem that the expansion coefficie

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrode plate and semiconductor device
  • Electrode plate and semiconductor device
  • Electrode plate and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0035] Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an electrode plate and a semiconductor device, and relates to the technical field of semiconductors. The electrode plate comprises a plurality of heat dissipation elements and connecting ribs, the heat dissipation elements are arranged in an array mode, every two adjacent heat dissipation elements are connected through one connecting rib, the heat dissipation elements are polygonal, and acute angles are formed between the connecting ribs and the heat dissipation elements. The electrode plate and the semiconductor device provided by the invention have the advantage that the chip is not easy to damage.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular, to an electrode sheet and a semiconductor device. Background technique [0002] Electrodes of semiconductor products provide conduction and heat dissipation functions for semiconductor chips, and the most cost-effective material for conduction and heat dissipation is copper. Some small-sized packages use copper materials as frames and electrodes. [0003] However, the expansion coefficient of the copper material is several times that of the semiconductor chip material. Due to the mismatch between the expansion coefficient of the electrode sheet and the semiconductor chip during the use process and product production process, it may cause the chip to expand during the thermal expansion and contraction process. Damage will directly affect the product qualification rate and product reliability. [0004] To sum up, in the prior art, there is a mismatch between the exp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/48H01L23/367
CPCH01L23/48H01L23/367H01L23/3672
Inventor 吴家健孙健锋钱嘉丽
Owner 捷捷半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap