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106 results about "Cesium bromide" patented technology

Caesium bromide or cesium bromide is an ionic compound of caesium and bromine with the chemical formula CsBr. It is a white or transparent solid with a melting point a 636 °C that readily dissolves in water. Its bulk crystals have the cubic CsCl structure, ...

Temperature inversion solution growth method of all-inorganic perovskite single crystals

The invention discloses a temperature inversion solution growth method of all-inorganic perovskite single crystals, and aims to solve the technical problem of low practicability of the existing growthmethod of the all-inorganic perovskite single crystals. According to the technical scheme, the temperature inversion solution growth method of the all-inorganic perovskite single crystals comprises the following steps: firstly mixing cesium bromide and lead bromide which are used as raw materials, dissolving and stirring the materials in an organic solvent which is dimethyl sulfoxide, filtering,then adding a mixed solution with cyclohexanol and dimethyl formamide to obtain a precursor solution; secondly keeping the temperature of the precursor solution for a certain time under a certain temperature, and filtering the solution after separating crystals out; and finally putting filtrate in a water tank, heating and increasing the temperature to grow large-sized and high-crystallization-quality CsPbBr3 crystals. According to the method, an XRD spectrum of CsPbBr3 powder prepared by the method is consistent with an XRD spectrum of a standard structure card, thus proving that the CsPbBr3powder is a pure phase; CsPbBr3 single crystals which are 4-7mm in length, 3-5mm in width and 2-3mm in height are obtained; the method is high in practicability.
Owner:NANJING GONGCHENG RES INST OF ENERGY CONSERVATION & NEW MATERIALS TECH CO LTD

Perovskite LED device based on surface ligand control and preparation method thereof

The invention relates to a method for preparing a perovskite LED device based on surface ligand control, including the following steps: applying an organic solution of a hole injection layer materialto the surface of a conductive substrate, and forming a hole injection layer after annealing; dissolving cesium bromide, lead bromide and phenethylamine bromide in an organic solvent under the effectof a 3-(decyl dimethyl ammonium) propane-1-sulfonic acid inner salt surfactant to obtain a perovskite precursor solution, applying the perovskite precursor solution to the surface of the hole injection layer and obtaining a perovskite film after annealing; treating the surface of the perovskite film with an alkylamine organic solution to form a light-emitting layer; and successively preparing an electron transport layer, an electron injection layer and a metal cathode electrode on the surface of the light-emitting layer. The method of the invention is simple and convenient, has a wide range ofmaterials and good repeatability, and can achieve the device performance. Through surface ligand exchange, the flatness and uniformity of the perovskite film are improved, the formation of defects iseffectively suppressed, and the overall performance of the device is significantly improved.
Owner:SUZHOU UNIV

Preparation and application of all-inorganic perovskite cell based on transition metal ion doping

The present invention provides an all-inorganic perovskite solar cell based on transition metal ions doped CsPbBr<3> and a preparation method and an application thereof. Specifically, the invention isthat conductive glass is first spin-coated with an electron transfer layer and subsequently spin-coated with a lead bromide solution mixed with transition metal ions, then is spin-coated with a cesium bromide solution repeatedly; the non-porous perovskite film with a high crystallinity and a large grain size is prepared; and finally the all-inorganic perovskite solar cell based on transition metal ions doped CsPbBr<3> is assembled by blade coating of carbon back electrode. The invention reduces the defect density in the perovskite film by doping transition metal ions, simultaneously the energy band structure is adjusted; the energy loss of charge migration is reduced; and the separation, extraction and transfer of photogenerated charges and charge recombination are reduced, thereby the photoelectric conversion efficiency and long-term operation stability of the cell are improved. The invention has the advantages such as simple and feasible preparation method, large optimization spaceof material combination, no noble metal back electrode or hole transporting layer and low cost.
Owner:OCEAN UNIV OF CHINA

Phase-change-controllable totally-inorganic perovskite thin film preparation method and device application

The invention belongs to the technical field of photoelectric functional materials and particularly relates to a phase-change-controllable totally-inorganic perovskite thin film preparation method anddevice application. The method comprises the steps that (1), precursor lead bromide and cesium bromide are placed into a vapor deposition device correspondingly, a substrate is placed in a depositionarea, and vacuum pumping is performed on the whole device; (2), an inert gas is introduced into the vapor deposition device; (3), the deposition temperature and deposition time are set, the deposition temperature is selected from 500-800 DEG C, and at the different deposition temperature, perovskite thin film has different composition and crystal forms. The phase-change-controllable totally-inorganic perovskite thin film preparation method and the device application adopt a chemical vapor deposition method, are simple in process condition, easy to control accurately and suitable for industrial production; meanwhile, the thin film has good uniformity and has good adhesiveness and spreadability with the substrate material, and the prepared optoelectronic thin film has broad application prospects; and by means of change of the deposition temperature, controllable growth of perovskite phase from CsPb2Br5 to CsPbBr3 is realized, and a photoelectric detector prepared on base of the perovskite thin film obtained by the phase-change-controllable totally-inorganic perovskite thin film preparation method shows good photoelectric response and switching characteristics.
Owner:CHANGZHOU INST OF TECH

Manganese doped CsPbBr3 perovskite quantum dot and molecular sieve composite luminescent material as well as preparation method and application thereof

The invention discloses a manganese doped CsPbBr3 perovskite quantum dot and molecular sieve composite luminescent material as well as a preparation method and an application thereof, and belongs to the technical field of luminescent materials. The method comprises the following steps: (1) stirring, centrifugation, washing and drying are carried for molecular sieve and a cesium bromide solution in order to obtain Cs+ exchanged molecular sieve; (2) octadecene, oleic acid and oleylamine are used for lead bromide and manganous bromide in order to obtain a bromide solution; (3) under the condition of inert gas and stirring, in octadecene, the bromide solution and the Cs+ exchanged molecular sieve are reacted, and cooling, washing and drying are carried out in order obtain the manganese doped CsPbBr3 perovskite quantum dot and molecular sieve composite luminescent material. The composite luminescent material has multi-peak emission in blue light and green light zones, and luminescent peak positions and each luminescent peak intensity can be modulated according to proportion between manganese ions and lead ions; the composite luminescent material has good environmental stability, and can be applied to the field of white light LED.
Owner:SOUTH CHINA UNIV OF TECH

Method for preparing layered structure inorganic perovskite negative electrode material by using gas phase method

The invention discloses a method for preparing a layered structure inorganic perovskite negative electrode material by using a gas phase method, and relates to the technical field of preparation of lithium ion battery negative electrode materials. The method comprises: sequentially or simultaneously depositing lead bromide and cesium bromide on a copper foil substrate under a vacuum condition through a gas phase method, and carrying out heating annealing in air to obtain the layered structure inorganic perovskite negative electrode material. According to the present invention, according to theprinciples of physical vapor deposition and chemical vapor deposition, inorganic lead bromide and cesium bromide are used as raw materials and are deposited on the surface of the copper foil substrate through heating evaporation, the evaporation rate, the deposition thickness and the thickness ratio are regulated, and the subsequent annealing treatment is performed to prepare the dense and uniform pure inorganic perovskite material. With the applications of the layered structure inorganic perovskite negative electrode material in lithium ion battery negative electrode materials, good thermodynamic stability and excellent physical and chemical properties can be achieved, and the process is simple.
Owner:HEFEI GUOXUAN HIGH TECH POWER ENERGY

Method for preparing two-dimensional inorganic perovskite negative electrode material by solid-liquid phase reaction

The invention discloses a method for preparing a two-dimensional inorganic perovskite negative electrode material by solid-liquid phase reaction. The method comprises the following steps of adding lead bromide and cesium bromide into N,N-dimethylformamide, heating and stirring, and drying under the vacuum condition, so as to obtain precursor powder; mixing the precursor powder and the lead bromide, performing ball milling, grinding, and drying under the vacuum condition, so as to obtain the two-dimensional inorganic perovskite negative electrode material. The method for preparing the two-dimensional inorganic perovskite negative electrode material by the solid-liquid phase reaction has the advantages that by adopting the simple solution synthesizing and ball milling technology, the precursor material is in contact with an interface in the high-energy impacting process, and then reacts, so as to obtain the inorganic perovskite material with high crystallizing degree; the problems of complicated preparation technology and higher cost due to graphitizing and carbon coating required by the existing negative electrode material of the lithium ion battery at high temperature are solved; the large-batch synthesizing preparation purpose is realized, the production process of the negative electrode material is greatly shortened, and the material cost is greatly reduced.
Owner:HEFEI GUOXUAN HIGH TECH POWER ENERGY

Recrystallization-based all-bromo perovskite blue light quantum dot and preparation method thereof

The invention belongs to the technical field of nano materials and inorganic perovskite light-emitting materials, and particularly relates to an all-bromo perovskite blue light quantum dot based on arecrystallization theory and a preparation method of the all-bromo perovskite blue light quantum dot. The preparation method comprises the following steps: preparing a precursor solution by a one-potmethod, taking cesium bromide and lead bromide as reactants, taking oleic acid and oleylamine as ligands, and taking N, Ndimethylformamide (DMF) as a solvent; adding a proper amount of methylbenzene into the precursor solution to form a mixed solution, so that the solution system is in a supersaturated state; at the moment, a small amount of the mixed solution is taken out, methylbenzene with thevolume being 1050 times that of the mixed solution is injected again, the CsPbBr3 blue light quantum dots which are extremely small in size and approximately uniform in size are obtained under the recrystallization effect, the fluorescence quantum yield reaches up to 87.20%, and the obtained emission peak wavelength ranges from 460-480 nm. The method skillfully uses the principle, is simple to operate, quick and efficient, and provides a new thought and a new method for the synthesis of the high-performance blue light material.
Owner:NAT UNIV OF DEFENSE TECH

All-inorganic perovskite solar cell based on inorganic perovskite nanocrystalline interface layer and preparation method and application thereof

The invention provides an all-inorganic perovskite solar cell based on an inorganic perovskite nanocrystalline interface layer and a preparation method and an application thereof. The method is characterized in that the lead bromide is spin-coated on a surface of a conductive glass-supported titanium dioxide electron transport layer by the multi-step spin coating technique, a high-purity CsPbBr3 light absorbing layer is prepared by spin coating of cesium bromide in multiple steps, n-hexane solution with the inorganic perovskite nanocrystals is then spin-coated onto the CsPbBr3 layer for interfacial modification, and lastly, a carbon coated back cell is assembled into the all-inorganic perovskite solar cell. The method is advantaged in that high hole conductivity and energy level adjustability of the inorganic perovskite nanocrystal are fully utilized, electron-hole separation is promoted, energy loss is reduced, perovskite is treated with the n-hexane solvent, the perovskite grain sizeis increased, defect density and charge recombination are reduced, energy conversion efficiency of the cell is effectively improved, the preparation process is simple, cost is controllable, the material optimization space is large, and the commercial production prospect is further wide.
Owner:OCEAN UNIV OF CHINA

Preparation method and application of CsPbBr3 inorganic perovskite film

ActiveCN110190151AOptimizing the interface energy level structureLower resistanceFinal product manufacturePhotovoltaic energy generationTwo stepFermi level
The invention provides a preparation method and an application of a CsPbBr3 inorganic perovskite film. The preparation method of the CsPbBr3 inorganic perovskite film comprises the steps of firstly, preparing a magnesium doped titanium dioxide compact layer by adopting a mode of chemical bath deposition, and then depositing lead bromide and cesium bromide on the magnesium doped titanium dioxide compact layer according to a two-step deposition process by adopting ultrasonic spraying. The prepared CsPbBr3 inorganic perovskite film is enabled to be generated in a large area, and the application range of the CsPbBr3 inorganic perovskite film is improved. According to the invention, the magnesium element is taken as an effective doping agent and introduced into the titanium dioxide compact layer in a simple way, thereby enabling the Fermi level of titanium dioxide to move up, thus optimizing the interface energy level structure between a CsPbBr3 perovskite layer and a titanium dioxide electron transport layer, increasing the free carrier concentration of the film, enabling the resistance of TiO2 to be reduced, and reducing the series resistance of the whole device. The photoelectric conversion efficiency of all-inorganic perovskite solar cells doped with magnesium can reach up to 5.75%.
Owner:WUHAN UNIV OF TECH

Room-temperature synthetic method of ultra pure inorganic halogen perovskite blue light nanosheet

InactiveCN108359457AImprove luminosityMake up for the shortcoming of low luminous efficiency and instabilityLuminescent compositionsSolventOleic Acid Triglyceride
The invention provides a room-temperature synthetic method of an ultra pure inorganic halogen perovskite blue light nanosheet. The method comprises the following steps: 1) preparing mixed liquor of oleylamine, oleic acid and toluene; 2) adding a precursor of lead bromide in the mixed liquor after the reaction in the step 1) is completed, uniformly stirring the materials, and adding a precursor ofcesium bromide; taking the precursor of lead bromide as a solvent of dimethyl sulfoxide; taking a hydrobromic acid solution with 40% weight ratio of the precursor of cesium bromide as a solvent; 3) injecting a butanol solution in the mixed liquor after the reaction in the step 2) is completed, fully reacting the materials, and performing centrifugation collection to obtain a supernatant; and 4) performing microwave heating on the supernatant and performing re-centrifugation, and depositing and dispersing the centrifuged precipitate at a ground floor in a toluene solution. The method has the advantages of simple operation and high efficiency, the luminescence property of the ultra pure inorganic halogen perovskite blue light nanosheet is excellent, and the shortage of the low luminescence efficiency and non stabilization of an inorganic halogen perovskite blue light nano-material in the prior art can be effectively made up.
Owner:NANJING UNIV OF SCI & TECH

Preparation method of inorganic perovskite-coated MXene two-dimensional layered anode material

The invention discloses a preparation method of an inorganic perovskite-coated MXene two-dimensional layered anode material and relates to the technical field of preparation of lithium ion battery anode materials. The preparation method comprises the following steps: adding lead bromide and cesium bromide into N,N-dimethyl formamide, introducing protective gas, heating and stirring, so that an inorganic perovskite material precursor is obtained; adding Ti3AlC2 into HF aqueous solution, stirring and reacting, centrifuging, washing, and performing vacuum drying, so that Ti3C2 powder is obtained;adding the Ti3C2 powder into the inorganic perovskite material precursor, heating, and stirring, so that precursor solution is obtained; adding methylbenzene into the precursor solution, centrifuging, and performing vacuum drying, so that the inorganic perovskite-coated MXene two-dimensional layered anode material is obtained. The preparation method disclosed by the invention enhances structuralstability of a MXene two-dimensional layered anode material Ti3C2 by coating the MXene two-dimensional layered anode material Ti3C2 with the inorganic perovskite material, so that the anode material has good stability and excellent physical and chemical properties; meanwhile, compared with the conventional high-cost technology that a lithium battery anode material needs to be graphitized and coated with carbon at high temperature, the preparation method disclosed by the invention is simple in technology and low in cost.
Owner:HEFEI GUOXUAN HIGH TECH POWER ENERGY

Blue-light perovskite thin film, preparation thereof, and inverted quasi-two-dimensional blue-light perovskite light-emitting diode

The invention belongs to the technical field of light-emitting diodes, and discloses a blue-light perovskite thin film, preparation thereof and an inverted quasi-two-dimensional blue-light perovskite light-emitting diode. The method comprises the following steps of: 1) preparing lead bromide, large-group organic halide and cesium bromide into a perovskite precursor solution by adopting an organic solvent; and 2) spin-coating the precursor solution, dropwise adding an anti-solvent in the spin-coating process, and removing the solvent to obtain the blue-light perovskite thin film. The inverted quasi-two-dimensional blue-light perovskite light-emitting diode comprises a cathode, an electron transport layer, an interface layer, a light-emitting layer, a hole transport layer, a hole injection layer and an anode distributed from bottom to top sequentially, wherein the light-emitting layer is the blue-light perovskite thin film. According to the method, the exciton binding energy of the blue-light perovskite can be increased, the morphology of the thin film is improved, meanwhile, formation of a low-dimensional phase (n = 1) is inhibited, and the luminous efficiency of the quasi-two-dimensional blue-light perovskite is improved. The blue light perovskite thin film is used for a light emitting diode, and therefor, blue light emission is achieved, and the light emitting efficiency is improved.
Owner:SOUTH CHINA UNIV OF TECH
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