Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method and application of CsPbBr3 inorganic perovskite film

A technology of inorganic calcium and titanite, applied in the field of solar cells, can solve the problem that the inorganic perovskite film cannot be prepared in a large area, and achieve the effect of increasing the concentration of free carriers, improving the coverage, and improving the scope of application.

Active Publication Date: 2019-08-30
WUHAN UNIV OF TECH
View PDF1 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention aims to propose a CsPbBr 3 Preparation method of inorganic perovskite thin film to solve existing CsPbBr 3 The problem that inorganic perovskite thin films cannot be prepared in large areas

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and application of CsPbBr3 inorganic perovskite film
  • Preparation method and application of CsPbBr3 inorganic perovskite film
  • Preparation method and application of CsPbBr3 inorganic perovskite film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] combine figure 1 Shown, the CsPbBr of this example 3 The preparation method of inorganic perovskite film specifically comprises the following steps:

[0041] 1) Add 2.5 ml of magnesium chloride aqueous solution with a concentration of 0.01 M to 100 ml of titanium dioxide precursor solution dropwise with a pipette gun to obtain solution A;

[0042] 2) Immerse the cleaned FTO conductive glass substrate in solution A, and put it in a thermostat at 70°C for 40 minutes for chemical bath deposition. After the chemical bath deposition is completed, take out the FTO conductive glass substrate and use Rinse with water, then blow dry with nitrogen, this process is repeated twice, and then heat treatment is carried out on a titanium-based hot stage at 450°C for 30 minutes to obtain a magnesium-doped titanium dioxide dense layer;

[0043]3) Place the FTO conductive glass substrate deposited with a dense layer of magnesium-doped titanium dioxide into a UV cleaning machine for clea...

Embodiment 2

[0052] combine figure 1 As shown, the difference between the present embodiment and embodiment 1 is: the dimethylformamide solution of lead bromide in the present embodiment step 3) is introduced with 0.4mg of polyoxyethylene-8-octyl as surfactant before spraying Base phenyl ether, a methanol solution of cesium bromide was introduced with 4 mg of polyoxyethylene-8-octyl phenyl ether as a surfactant before spraying. Wherein, the concentration of polyoxyethylene-8-octylphenyl ether in the dimethylformamide solution of lead bromide and the methanol solution of cesium bromide is both 0.0003M.

[0053] It should be noted that the surfactant in the present invention is not limited to the above-mentioned polyoxyethylene-8-octylphenyl ether, and it can also be other substances with dispersing properties, such as sodium lauryl sulfate.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method and an application of a CsPbBr3 inorganic perovskite film. The preparation method of the CsPbBr3 inorganic perovskite film comprises the steps of firstly, preparing a magnesium doped titanium dioxide compact layer by adopting a mode of chemical bath deposition, and then depositing lead bromide and cesium bromide on the magnesium doped titanium dioxide compact layer according to a two-step deposition process by adopting ultrasonic spraying. The prepared CsPbBr3 inorganic perovskite film is enabled to be generated in a large area, and the application range of the CsPbBr3 inorganic perovskite film is improved. According to the invention, the magnesium element is taken as an effective doping agent and introduced into the titanium dioxide compact layer in a simple way, thereby enabling the Fermi level of titanium dioxide to move up, thus optimizing the interface energy level structure between a CsPbBr3 perovskite layer and a titanium dioxide electron transport layer, increasing the free carrier concentration of the film, enabling the resistance of TiO2 to be reduced, and reducing the series resistance of the whole device. The photoelectric conversion efficiency of all-inorganic perovskite solar cells doped with magnesium can reach up to 5.75%.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a CsPbBr 3 Preparation method and application of inorganic perovskite thin film. Background technique [0002] In recent years, the research on organic / inorganic hybrid perovskite solar cells has developed rapidly, and its photoelectric conversion efficiency has rapidly increased from 3.8% to 23.7% in just a few years. Its preparation process is simple and the cost of materials is low. Prospects for emerging photovoltaic devices. However, organic / inorganic hybrid perovskite solar cells still have some problems to be solved in terms of stability and industrial preparation process. [0003] In terms of stability, organic / inorganic hybrid perovskite solar cells have poor tolerance to high temperature and high humidity environments, which seriously restricts the further development of perovskite solar cells. Among the wide variety of perovskite material systems that can be use...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18H01L31/0445H01L31/032
CPCH01L31/032H01L31/18H01L31/0445Y02E10/50Y02P70/50
Inventor 彭勇吴晗项天星程一兵
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products