78 results about "Magnesium doping" patented technology

The invention relates to the technical field of lithium batteries, in particular to a magnesium-doped and carbon nanotube dual-modified lithium manganese iron phosphate material and a preparation method thereof. The method comprises the following steps: preparing a mixed solution from a magnesium source component, a phosphorus source component, a manganese source component, an iron source component and a lithium source component, mixing the mixed solution with a carbon nanotube, and carrying out a hydrothermal reaction to generate the lithium iron manganese phosphate material in situ. According to the method, Mg < 2 + > doping optimizes the bulk phase structure stability of the material, relieves lattice stress and improves the lithium ion diffusion rate, a three-dimensional conductive network constructed by CNTs connects internal particles of agglomerated particles to make contact with the outside, and the internal particles and the outside synergistically reduce polarization and improve the rate performance; the material has less capacity attenuation and higher coulombic efficiency, and also has a good lithium ion transmission effect, and the capacity is greatly improved.

The invention discloses a long-circulation silicon-carbon negative electrode material as well as a preparation method and application thereof, and belongs to the technical field of negative electrode materials. The method comprises the following steps: firstly, carrying out liquid-phase atomized magnesium doping modification on a mesoporous carbon material, then efficiently depositing nano silicon by utilizing a vapor deposition technology, and carrying out gradient carbon layer coating on the basis to finally prepare the long-circulation silicon-carbon negative electrode material. The material is of a mesoporous core-shell structure, the diameter is 1-20 microns, and the material is mainly applied to the field of negative electrodes of lithium ion batteries or lithium ion capacitors. The cycling stability of the silicon-carbon negative electrode material is remarkably improved, the conductivity is improved through magnesium doping, so that the overall electrochemical performance is improved, and meanwhile, the preparation process is simple, convenient and feasible, and is suitable for industrial production.

Provided are a wide-temperature-range solid-state electrolyte, a preparation method thereof and use thereof in solid-state lithium metal batteries. The preparation method includes: dissolving a lithium salt and a magnesium salt in a solvent to obtain a mixed salt solution; and mixing the mixed salt solution with an ammonia fluoride solution, subjecting a resulting mixture to reaction, and subjecting a resulting reaction product to centrifugation, washing, and drying in sequence to obtain magnesium-doped lithium fluoride nanoparticles; and mixing the magnesium-doped lithium fluoride nanoparticles, a liquid plasticizer, a polymer monomer and a thermal initiator to obtain a liquid precursor, and subjecting the liquid precursor to curing to obtain the wide-temperature-range solid-state electrolyte, where the polymer monomer is a mixture of ethoxylated trimethylolpropane triacrylate and hexafluorobutyl methacrylate.

The invention relates to the technical field of synthesis of electrochemical materials, in particular to an electrocatalyst of magnesium-doped copper oxide nanospheres and a preparation method and application of the electrocatalyst, and the electrocatalyst is prepared through a one-step hydrothermal method and is of a nanosphere structure with a uniform microstructure. According to the catalyst, in a wide voltage range from-1.277 V vs.RHE to-1.677 V vs.RHE, relatively high Faraday efficiency of electrochemical reduction of carbon dioxide into C2 + chemicals is realized. In addition, the technology is green and environment-friendly, the raw materials used in the technology are cheap, the preparation process is simple, the energy consumption is low, a new thought is provided for preparation of the electrocatalyst for generating high-added-value products, and the method has a good application prospect.

The invention belongs to the field of semiconductors, and discloses a multistage junction termination structure of a vertical GaN diode and a preparation method. Comprising a sapphire substrate, and a GaN nodule layer grows on the sapphire substrate; a silicon-doped n +-GaN layer is grown on the GaN nodule layer, a silicon-doped n-GaN layer is grown on the n +-GaN layer, a magnesium-doped p-GaN layer is grown on the n-GaN layer, and a magnesium-doped p +-GaN layer is grown on the p-GaN layer; etching from the p < + >-GaN layer to the n < + >-GaN layer, and preparing a negative electrode on the surface of the n < + >-GaN layer; etching from the p +-GaN layer to the p-GaN layer to form a continuous multi-stage step, and preparing a positive electrode on the surface of the p +-GaN layer; after the multi-stage step junction termination structure is introduced, the electric field aggregation phenomenon is obviously relieved, which indicates that the junction termination structure effectively reduces the internal electric field peak value.

The invention belongs to the technical field of sodium ion battery positive electrode material manufacturing, particularly provides a magnesium-doped sodium ion battery positive electrode material, a preparation method and application, and aims to solve the problem that sodium ion transmission is not facilitated due to the fact that sodium layer spacing of a sodium ion battery positive electrode material in the prior art is too small. The general chemical formula of the magnesium-doped sodium ion battery positive electrode material is NaNi < 0.6-x > Fe < 0.25 > Mn < 0.15 > Mg < x > O < 2 >, x is smaller than or equal to 0.05; a co-precipitation method is utilized, magnesium is doped in a precursor preparation stage, so that magnesium can smoothly enter a transition metal layer, in the frequent deintercalation process of sodium, the effect of stabilizing a layered structure is achieved, the change of the layered structure can be reduced, the cycle life of the material is ensured, the interlayer spacing of sodium can be enlarged through doping of magnesium, transmission of sodium ions is facilitated, and the service life of the material is prolonged. The rate capability of the material is improved, so that the material has excellent electrochemical performance at normal temperature and low temperature.

The invention discloses a rate type lithium iron phosphate positive electrode material, a preparation method and a battery thereof, firstly, iron phosphate is modified by dopamine hydrochloride, the surface activity of the iron phosphate is improved, subsequent doping of cobalt and magnesium is facilitated, meanwhile, excessive growth of crystal grains can be limited in high-temperature sintering, nitrogen and carbon are introduced into lithium iron phosphate, and the rate type lithium iron phosphate positive electrode material is prepared. A carbon-nitrogen coating layer is formed, so that the electronic conductivity is improved; then, isopropyl tri (dioctyl pyrophosphate acyloxy) titanate, cobalt oxide and magnesium oxide are adopted to prepare a doping agent, cobalt and magnesium are uniformly doped into lithium iron phosphate crystal lattices to form bulk phase doping, and cobalt and magnesium co-doping synergistically improves the electronic conductivity and structural stability of the lithium iron phosphate material; finally, a biomass carbon source beta-cyclodextrin is adopted for carbon coating, a uniform carbon layer is formed on the surface of the lithium iron phosphate, and the electrochemical performance of the lithium iron phosphate is further improved; the lithium iron phosphate material prepared by the method also has good electrochemical performance under high magnification.

The utility model belongs to the field of semiconductors, and discloses a multistage junction termination structure of a vertical GaN diode. The multistage junction termination structure comprises a sapphire substrate on which a GaN nodule layer grows; a silicon-doped n +-GaN layer is grown on the GaN nodule layer, a silicon-doped n-GaN layer is grown on the n +-GaN layer, a magnesium-doped p-GaN layer is grown on the n-GaN layer, and a magnesium-doped p +-GaN layer is grown on the p-GaN layer; etching from the p < + >-GaN layer to the n < + >-GaN layer, and preparing a negative electrode on the surface of the n < + >-GaN layer; etching from the p +-GaN layer to the p-GaN layer to form a continuous multi-stage step, and preparing a positive electrode on the surface of the p +-GaN layer; according to the utility model, after the multi-stage step junction termination structure is introduced, the electric field aggregation phenomenon is obviously relieved, which indicates that the junction termination structure effectively reduces the internal electric field peak value.

Disclosed are a negative electrode material for a secondary battery and a preparation method thereof, the negative electrode material enhancing the initial discharge capacity, initial efficiency and life characteristics of the secondary battery. The negative electrode material for a secondary battery according to the present disclosure comprises an active material having a carbon-coated surface, a conductive material, and a binder. The active material comprises a magnesium-doped composite. The magnesium-doped composite comprises silicon oxide (SiOx, 0.5<x≤2) nanoparticles, silicon (Si) nanoparticles, and magnesium oxide nanoparticles. The diameter of the magnesium oxide nanoparticles may be 30-150 nm.

A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with some of the barriers doped and some of the barriers not doped, may be driven at high data rates with low drive current densities. Preferably the barriers that are not doped are the barriers closest to one side of a p region or an n region of the LED. With Mg doping, preferably the barriers that are not doped are the barriers closest to the p region of the LED.

The application provides a thin film with an epsilon phase gallium oxide hetero-epitaxial structure and a preparation method thereof, which comprises, from bottom to top, a substrate layer, a first gallium oxide layer and a second gallium oxide layer; the first gallium oxide layer is an epsilon phase gallium oxide layer doped with magnesium Mg, and the magnesium Mg doping acts as an acceptor type trap in the epsilon phase gallium oxide, effectively compensates for the donor type defects of the epsilon phase gallium oxide, and improves the overall resistivity of the epsilon phase gallium oxide thin film. The preparation method adopts a metal organic chemical vapor deposition method, and the growth temperature of the second gallium oxide layer is higher than that of the first gallium oxide layer; and the molar flow ratio of the magnesium source to the gallium source is controlled to be 0.0001-0.1 during preparation. The application introduces appropriate Mg doping through a nucleation layer stage, so that the Mg acts as an acceptor type trap to compensate for donor type defects, while improving the crystal nucleation quality, reducing dislocations and leakage channels, and realizing the dual optimization of the crystal quality and electrical performance of the epsilon phase gallium oxide thin film, thereby effectively reducing the thin film leakage current and improving the resistivity.

This invention discloses a biomimetic tactile-pain-sensitive dual-modal flexible pressure sensor and its fabrication method. The sensor comprises an upper electrode, a tactile-pain-sensitive piezoelectric sensing component, and a lower electrode. The electrode employs an elastic substrate layer / modified functional layer / conductive network. The tactile-pain-sensitive piezoelectric sensing component comprises a magnesium-doped zinc oxide nanomaterial composite layer designed based on a concentration gradient and an elastic polymer composite layer, as well as a common ground electrode. The tactile sensing layer achieves high sensitivity by blending high-concentration Mg-ZnO nanorod filler with PDMS; the pain sensing layer uses low-concentration Mg-ZnO nanorod filler, resulting in lower sensitivity. Independent signal pathways are formed through the common ground electrode, enabling dual-modal sensing of tactile perception and pain alarm. The sensor fabricated in this invention possesses advantages such as high sensitivity, wide detection range, and strong resistance to signal crosstalk, and can be applied to biomimetic sensing fields such as intelligent robots and wearable devices.

The application discloses a flexible boron nitride homojunction pn and a preparation method, wherein a sulfur-doped n-type boron nitride film is grown on a sapphire substrate through a low-pressure chemical vapor deposition technology; a magnesium-doped p-type boron nitride film is grown on a copper substrate through a low-pressure chemical vapor deposition technology; the sulfur-doped n-type boron nitride film and the magnesium-doped p-type boron nitride film are transferred to a flexible substrate through a polymethyl methacrylate assisted liquid phase exfoliation technology, and heat treatment is conducted in an argon atmosphere to obtain a flexible boron nitride homojunction pn. The application realizes efficient n-type and p-type doping of the boron nitride film, and prepares a boron nitride-based homojunction pn on the flexible substrate through a large-area film exfoliation and transfer technology. The homojunction structure has high lattice matching degree and low junction formation energy, further develops the preparation and research of van der Waals homojunctions in the field of ultrawide bandgap materials, and has great application prospect in the fields of optoelectronic devices and high-power power electronic devices.

The invention discloses a Micro LED epitaxial growth method suitable for multiple current densities and an epitaxial structure. The method comprises the step of sequentially growing an n-type GaN layer, a V-shaped pit forming layer, a multi-quantum well light-emitting layer, a low-temperature p-GaN layer, an electron blocking layer and a high-temperature p-GaN layer on a substrate. The core of the method is that growth parameters of a V-shaped pit forming layer and a low-temperature p-GaN layer are cooperatively adjusted according to the target working current density m of the Micro LED device: when m is increased, growth conditions are controlled to increase the size of an opening of a V-shaped pit, and meanwhile, the thickness of the low-temperature p-GaN layer is increased and the magnesium doping concentration of the low-temperature p-GaN layer is reduced; and when m is reduced, reverse adjustment is carried out. Through linkage regulation and control of the key parameters, it is ensured that the hole injection depth is matched with the position of the light-emitting quantum well under different current densities, and the problems that the light-emitting efficiency of a Micro LED is unstable and voltage drifts in different application scenes are effectively solved.

This invention discloses a magnesium-doped sodium fluorinated iron phosphate material with a double coating of sodium phosphate and carbon layer, its preparation method, and its application. The magnesium-doped sodium fluorinated iron phosphate material uses Na₂Fe₂O₃ as the substrate. x Mg y The core is composed of PO4F, coated with a sodium phosphate layer, and an outermost conductive carbon layer. Fe has a +2 valence, 0.05 ≤ y ≤ 0.10, and x + y = 1. This invention achieves surface phosphate enrichment through a single ball milling process by adding excess phosphorus and sodium sources. Molten sodium phosphate is then pre-sintered to coat the pre-sintered particles, improving the material's cycle performance. High-temperature sintering achieves carbon coating, enhancing electronic conductivity. This single ball milling and sintering process forms a uniform sodium phosphate and carbon double coating on the material surface, reducing interfacial side reactions between the material and the electrolyte and improving problems such as low discharge capacity and poor rate performance caused by the material's low intrinsic conductivity.

The invention discloses a perovskite diode with electricity-light and light-electricity conversion functions and a preparation method of the perovskite diode. The perovskite diode sequentially comprises a transparent substrate, a cathode, an electron transport layer, an interface layer, a perovskite active layer, a hole transport layer and an anode, the electron transport layer is zinc oxide or magnesium-doped zinc oxide; the interface layer is serine or phenethyl ammonium bromide, and the serine or the phenethyl ammonium bromide is used for inhibiting the fluorescence quenching effect of zinc oxide or magnesium-doped zinc oxide on perovskite; the perovskite active layer is prepared from a precursor solution containing AX, BX2 and serine, A is a monovalent cation, B is a divalent metal cation, and X is a monovalent anion. According to the invention, effective light-electricity and electricity-light conversion functions are simultaneously realized in a single perovskite diode, and balanced photovoltaic and luminescent properties are obtained.

The invention provides a magnesium-doped MXene dual-network hydrogel adsorbent as well as a preparation method and application thereof. The preparation method comprises the following steps: dispersing MXene in deionized water, adding a magnesium source, carrying out ion exchange reaction, and carrying out centrifugal separation, washing and drying after the reaction is finished, so as to obtain magnesium-doped MXene; the preparation method comprises the following steps: dissolving an acrylamide monomer and an acrylic monomer in deionized water, adding a cross-linking agent and an initiator, and uniformly mixing to obtain a pre-polymerized solution; and dispersing magnesium-doped MXene in deionized water, adding the pre-polymerization solution, uniformly stirring, and carrying out polymerization reaction to obtain the magnesium-doped MXene dual-network hydrogel adsorbent. According to the preparation method, the dispersity and adsorption activity of MXene can be remarkably improved through magnesium doping, meanwhile, the double-network hydrogel can provide rich adsorption sites and a three-dimensional network structure, and the adsorption capacity and the mechanical strength are further enhanced. The adsorbent has high adsorption capacity, excellent mechanical property and good cycle stability, and is suitable for efficiently removing copper and lead ions in water.

This invention discloses a bimetallic ion-doped sodium vanadium fluorophosphate cathode material and its preparation method, belonging to the technical field of secondary battery cathode materials. The chemical formula of the sodium vanadium fluorophosphate cathode material of this invention is Na. 3‑x Mg x V 2‑y Ti y (PO4)2F3, where 0.01≤x≤0.03, 0.025≤y≤0.075. This invention, through synergistic optimization of the composition and preparation method of sodium vanadium fluorophosphate cathode material, promotes selective titanium doping at vanadium sites and selective magnesium doping at sodium sites, effectively improving the specific capacity, cycle stability, and rate performance of the cathode material. Therefore, sodium-ion batteries assembled using the cathode material of this invention exhibit superior overall performance, demonstrating good capacity retention under both high and low current density conditions, providing an effective way to improve the performance of sodium-ion battery cathode materials.

Laboratory Catalytic Device for Using Magnesium-Doped Zinc Ferrichromite

The application discloses a magnesium-doped cobalt-nitrogen co-modified biochar composite material and a preparation method and application thereof, and belongs to the technical field of sewage treatment. The preparation method comprises the following steps: pyrolyzing agricultural waste under an inert atmosphere to obtain biochar; and through an impregnation-pyrolysis process, soluble cobalt salt, magnesium salt and a nitrogen source are combined with the biochar to obtain the magnesium-doped cobalt-nitrogen co-modified biochar composite material. According to the application, the electronic structure of cobalt is regulated through magnesium doping, and a stable Co-N x and Mg-O-Co interface is formed by combining nitrogen coordination, so that the activation capacity of the composite material on peroxymonosulfate is enhanced. When the material activates peroxymonosulfate, thiamethoxam is efficiently degraded through a free radical and non-free radical synergistic path, and the material has the advantages of low metal ion leaching rate, wide pH adaptation range, strong anti-interference capacity and the like, and exhibits excellent degradation performance on neonicotinoid insecticides such as thiamethoxam in a complex water environment.

This invention belongs to the field of new energy material preparation technology and discloses a method for controlling the doping sites of high-nickel layered cathode materials. This method addresses the problems of unclear doping site occupancy and difficulty in precise site control in existing elemental doping technologies, which lead to insufficient material structural stability and poor cycle performance consistency. It proposes a scheme to selectively adjust magnesium doping sites by introducing magnesium as a doping element in stages. This includes: introducing magnesium salt in the co-precipitation stage to achieve synergistic doping of magnesium at transition metal sites and lithium sites; and introducing magnesium salt in the lithiation stage to achieve single doping of magnesium at transition metal sites. By controlling the magnesium doping sites, the stability of the layered structure is significantly enhanced, lattice oxygen loss and layered structure collapse are suppressed, thereby greatly improving the cycle stability and electrochemical performance of high-nickel layered cathode materials. Furthermore, this invention has a simple process, is easy to operate, and is suitable for large-scale production.

The invention discloses a preparation method and application of a surface active coating, and belongs to the technical field of artificial joint coatings. A magnesium-doped porous titanium dioxide nanotube array layer and a zinc-strontium co-doped mesoporous bioactive glass release layer are formed on the surface of a substrate; the single performance such as the bonding strength, the osteogenic activity and the antibacterial ability of the coating is exceeded, and more importantly, the unification and the continuous high efficiency of the performance are realized through the gradient and synergistic system design of the coating; a new solution is provided for solving the two major problems of artificial joint replacement, namely sterile looseness and antibacterial ability, and the method has extremely high clinical transformation value and market prospect.

This invention relates to the field of lithium manganese iron phosphate (LFP) cathode materials, specifically to a high-performance LFP cathode material and its preparation method. This method addresses the limitations of existing LFP cathode materials in terms of cycle charge retention and voltage decay. The preparation method uses lithium, iron, manganese, phosphorus, doped metal compounds, carbon, and 3,4-ethylenedioxythiophene as raw materials. Through the synergistic effect of magnesium doping and 3,4-ethylenedioxythiophene coating, the electronic conductivity and ion diffusion coefficient of LFP are significantly improved, thus enhancing the rate performance of the material. Furthermore, the cycle stability and overall performance of the material are greatly improved.

The invention provides a modulation-doped aluminum nitride / diamond heterojunction material and a preparation method, and belongs to the technical field of semiconductors, and the preparation method comprises the following steps: preparing a hydrogen terminal layer on a diamond substrate to form a hydrogen terminal diamond substrate; growing an intrinsic aluminum nitride layer on the hydrogen terminal layer in an oriented manner; and modulating and growing a magnesium-doped aluminum nitride functional layer on the intrinsic aluminum nitride layer to form a hierarchical interface charge transport channel. According to the preparation method of the modulation-doped aluminum nitride / diamond heterojunction material provided by the invention, directional regulation and control of interface carriers are realized through hierarchical structural design of the surface of the hydrogen terminal diamond in combination with precise process control of pulse laser deposition, the carrier mobility and charge transport efficiency of the heterojunction are remarkably improved, and the performance of the material is improved. The aluminum nitride / diamond heterojunction material with high electrical characteristics is obtained, and the technical contradiction that process feasibility and electrical property optimization cannot be considered in the prior art is solved.

The invention belongs to the technical field of electronic materials, and discloses a magnesium-strontium double-doped calcium fluoride crystal and a preparation method and application thereof.The method comprises the steps that firstly, disodium ethylene diamine tetraacetate is chelated with calcium and magnesium ions, and the calcium and magnesium ions and villiaumite are subjected to a coordination exchange reaction to prepare a magnesium-doped calcium fluoride microsphere precursor; regulating and controlling hydrolysis of 3-aminopropyltriethoxysilane through an absolute ethyl alcohol-deionized water mixed solvent, and realizing uniform anchoring and deposition of strontium ions by virtue of an interface connection effect of the 3-aminopropyltriethoxysilane, so as to construct a magnesium-strontium double-doped precursor with a core-shell structure; carrying out hot pressed sintering in a CF4 / Ar mixed atmosphere to obtain a high-density polycrystalline blank; and finally, finishing crystal oriented growth by adopting a Bridgman-Stockbarger method. Through the synergistic effect of the components in the whole process, gradient uniform doping of magnesium and strontium ions is achieved, lattice distortion is effectively eliminated, the optical uniformity, the anti-laser-damage threshold value and the mechanical stability of the crystal are improved, and the prepared crystal can be widely applied to manufacturing of special electronic materials such as semiconductor wafers and the like and has good industrialization prospects.

The application discloses a perovskite diode with photoelectric conversion function and a preparation method thereof. The perovskite diode comprises a transparent substrate, a cathode, an electron transport layer, an interface layer, a perovskite active layer, a hole transport layer and an anode in sequence. The electron transport layer is zinc oxide or magnesium-doped zinc oxide. The interface layer is serine or phenethyl ammonium bromide, which is used for inhibiting the fluorescence quenching effect of zinc oxide or magnesium-doped zinc oxide on the perovskite. The perovskite active layer is prepared from a precursor solution containing AX, BX2 and serine, wherein A is a monovalent cation, B is a divalent metal cation and X is a monovalent anion. The application simultaneously realizes effective photoelectric conversion and electric-optical conversion functions in a single perovskite diode, and balanced photovoltaic and luminescent performances are obtained.

The invention discloses a method for directly preparing an iron-magnesium doped ternary positive electrode material from manganese purification slag, which comprises the following steps: leaching the manganese purification slag with the main components of nickel, cobalt, manganese, magnesium, iron and calcium, removing calcium, adjusting the metal molar ratio, preparing a precursor and calcining to obtain the doped ternary positive electrode material. According to the invention, the stability of the crystal structure of the material is improved by using impurity metal ions of iron and magnesium, the elements can be efficiently recycled and reused through reasonable proportion of nickel, cobalt, manganese, magnesium and iron elements, and the first charge-discharge specific capacity of the material reaches a relatively high level of 153mAh / g or above; and the capacity retention ratio of the material in 100 weeks is maintained to be more than 98.0%, and meanwhile, modification treatment on the surface of the ternary positive electrode material precursor can be avoided, so that the effects of short process flow and good material cycle performance are realized. Besides, in the process from low magnification to high magnification of the material, the reduction amplitude of the average discharge specific capacity of the first five circles is only 10%-16%, and good charge and discharge stability is shown.

The invention discloses a doping regeneration method of a waste ternary material, and belongs to the technical field of lithium battery material regeneration. The doping regeneration method of the waste ternary material comprises the following steps: crushing a waste ternary positive plate, and sorting to respectively obtain a current collector and ternary powder; adding magnesium oxide into the ternary powder, mixing, carrying out mechanical fusion to obtain a ternary material containing a magnesium oxide coating layer, and carrying out first-stage sintering; and adding lithium salt into the sintered ternary material, and carrying out second-stage sintering. According to the method, the interface of the ineffective material is doped in a controllable and quantitative co-doping mode of Mg < 2 + > / F <->, a magnesium doping proportion formula and a sintering condition formula are established according to the Ni content, and repairing and regeneration of the medium-high nickel ternary material are completed. Wherein the introduced Mg < 2 + > / F <-> element forms a co-doped structure on an interface, a more stable interface structure is newly built, and the problems that the high-nickel ternary material is poor in solid-phase repair regeneration performance and low in quality are solved.

The present invention provides a negative electrode active material comprising a magnesium-doped calcium stannate composite material, wherein the mass fraction of magnesium in the magnesium-doped calcium stannate composite material is 0.5-2%. By introducing magnesium into the calcium stannate, the present invention overcomes the intrinsic defects of calcium stannate (CaSnO3) to a certain extent, thereby improving the reversible capacity and cycle performance of the calcium stannate.

This invention discloses a preparation process for magnesium-doped modified nickel-iron-manganese-based precursor materials, belonging to the field of electrode material preparation. The invention includes the following steps: (1) solution preparation; (2) preparation of the reaction substrate; (3) feeding; (4) nucleation reaction; (5) growth reaction; (6) magnesium doping modification; (7) aging reaction; (8) washing; and (9) drying. This invention utilizes magnesium-modified doped nickel-iron-manganese-based materials and employs an intermittent process to prepare sodium electrode precursors. By controlling factors such as the solid content, flow rate, and pH value of the reactants, the structure and morphology of the crystals can be precisely controlled. Simultaneously, the particle size distribution of the precursor can be well adjusted, thereby preparing sodium electrode precursor materials with uniform particle size.