39 results about "Magnesium doping" patented technology

Disclosed are a negative electrode material for a secondary battery and a preparation method thereof, the negative electrode material enhancing the initial discharge capacity, initial efficiency and life characteristics of the secondary battery. The negative electrode material for a secondary battery according to the present disclosure comprises an active material having a carbon-coated surface, a conductive material, and a binder. The active material comprises a magnesium-doped composite. The magnesium-doped composite comprises silicon oxide (SiOx, 0.5<x≤2) nanoparticles, silicon (Si) nanoparticles, and magnesium oxide nanoparticles. The diameter of the magnesium oxide nanoparticles may be 30-150 nm.

The application provides a thin film with an epsilon phase gallium oxide hetero-epitaxial structure and a preparation method thereof, which comprises, from bottom to top, a substrate layer, a first gallium oxide layer and a second gallium oxide layer; the first gallium oxide layer is an epsilon phase gallium oxide layer doped with magnesium Mg, and the magnesium Mg doping acts as an acceptor type trap in the epsilon phase gallium oxide, effectively compensates for the donor type defects of the epsilon phase gallium oxide, and improves the overall resistivity of the epsilon phase gallium oxide thin film. The preparation method adopts a metal organic chemical vapor deposition method, and the growth temperature of the second gallium oxide layer is higher than that of the first gallium oxide layer; and the molar flow ratio of the magnesium source to the gallium source is controlled to be 0.0001-0.1 during preparation. The application introduces appropriate Mg doping through a nucleation layer stage, so that the Mg acts as an acceptor type trap to compensate for donor type defects, while improving the crystal nucleation quality, reducing dislocations and leakage channels, and realizing the dual optimization of the crystal quality and electrical performance of the epsilon phase gallium oxide thin film, thereby effectively reducing the thin film leakage current and improving the resistivity.

This invention discloses a biomimetic tactile-pain-sensitive dual-modal flexible pressure sensor and its fabrication method. The sensor comprises an upper electrode, a tactile-pain-sensitive piezoelectric sensing component, and a lower electrode. The electrode employs an elastic substrate layer / modified functional layer / conductive network. The tactile-pain-sensitive piezoelectric sensing component comprises a magnesium-doped zinc oxide nanomaterial composite layer designed based on a concentration gradient and an elastic polymer composite layer, as well as a common ground electrode. The tactile sensing layer achieves high sensitivity by blending high-concentration Mg-ZnO nanorod filler with PDMS; the pain sensing layer uses low-concentration Mg-ZnO nanorod filler, resulting in lower sensitivity. Independent signal pathways are formed through the common ground electrode, enabling dual-modal sensing of tactile perception and pain alarm. The sensor fabricated in this invention possesses advantages such as high sensitivity, wide detection range, and strong resistance to signal crosstalk, and can be applied to biomimetic sensing fields such as intelligent robots and wearable devices.

The application discloses a flexible boron nitride homojunction pn and a preparation method, wherein a sulfur-doped n-type boron nitride film is grown on a sapphire substrate through a low-pressure chemical vapor deposition technology; a magnesium-doped p-type boron nitride film is grown on a copper substrate through a low-pressure chemical vapor deposition technology; the sulfur-doped n-type boron nitride film and the magnesium-doped p-type boron nitride film are transferred to a flexible substrate through a polymethyl methacrylate assisted liquid phase exfoliation technology, and heat treatment is conducted in an argon atmosphere to obtain a flexible boron nitride homojunction pn. The application realizes efficient n-type and p-type doping of the boron nitride film, and prepares a boron nitride-based homojunction pn on the flexible substrate through a large-area film exfoliation and transfer technology. The homojunction structure has high lattice matching degree and low junction formation energy, further develops the preparation and research of van der Waals homojunctions in the field of ultrawide bandgap materials, and has great application prospect in the fields of optoelectronic devices and high-power power electronic devices.

The invention discloses a Micro LED epitaxial growth method suitable for multiple current densities and an epitaxial structure. The method comprises the step of sequentially growing an n-type GaN layer, a V-shaped pit forming layer, a multi-quantum well light-emitting layer, a low-temperature p-GaN layer, an electron blocking layer and a high-temperature p-GaN layer on a substrate. The core of the method is that growth parameters of a V-shaped pit forming layer and a low-temperature p-GaN layer are cooperatively adjusted according to the target working current density m of the Micro LED device: when m is increased, growth conditions are controlled to increase the size of an opening of a V-shaped pit, and meanwhile, the thickness of the low-temperature p-GaN layer is increased and the magnesium doping concentration of the low-temperature p-GaN layer is reduced; and when m is reduced, reverse adjustment is carried out. Through linkage regulation and control of the key parameters, it is ensured that the hole injection depth is matched with the position of the light-emitting quantum well under different current densities, and the problems that the light-emitting efficiency of a Micro LED is unstable and voltage drifts in different application scenes are effectively solved.

This invention discloses a bimetallic ion-doped sodium vanadium fluorophosphate cathode material and its preparation method, belonging to the technical field of secondary battery cathode materials. The chemical formula of the sodium vanadium fluorophosphate cathode material of this invention is Na. 3‑x Mg x V 2‑y Ti y (PO4)2F3, where 0.01≤x≤0.03, 0.025≤y≤0.075. This invention, through synergistic optimization of the composition and preparation method of sodium vanadium fluorophosphate cathode material, promotes selective titanium doping at vanadium sites and selective magnesium doping at sodium sites, effectively improving the specific capacity, cycle stability, and rate performance of the cathode material. Therefore, sodium-ion batteries assembled using the cathode material of this invention exhibit superior overall performance, demonstrating good capacity retention under both high and low current density conditions, providing an effective way to improve the performance of sodium-ion battery cathode materials.

Laboratory Catalytic Device for Using Magnesium-Doped Zinc Ferrichromite

This invention belongs to the field of new energy material preparation technology and discloses a method for controlling the doping sites of high-nickel layered cathode materials. This method addresses the problems of unclear doping site occupancy and difficulty in precise site control in existing elemental doping technologies, which lead to insufficient material structural stability and poor cycle performance consistency. It proposes a scheme to selectively adjust magnesium doping sites by introducing magnesium as a doping element in stages. This includes: introducing magnesium salt in the co-precipitation stage to achieve synergistic doping of magnesium at transition metal sites and lithium sites; and introducing magnesium salt in the lithiation stage to achieve single doping of magnesium at transition metal sites. By controlling the magnesium doping sites, the stability of the layered structure is significantly enhanced, lattice oxygen loss and layered structure collapse are suppressed, thereby greatly improving the cycle stability and electrochemical performance of high-nickel layered cathode materials. Furthermore, this invention has a simple process, is easy to operate, and is suitable for large-scale production.

The invention discloses a preparation method and application of a surface active coating, and belongs to the technical field of artificial joint coatings. A magnesium-doped porous titanium dioxide nanotube array layer and a zinc-strontium co-doped mesoporous bioactive glass release layer are formed on the surface of a substrate; the single performance such as the bonding strength, the osteogenic activity and the antibacterial ability of the coating is exceeded, and more importantly, the unification and the continuous high efficiency of the performance are realized through the gradient and synergistic system design of the coating; a new solution is provided for solving the two major problems of artificial joint replacement, namely sterile looseness and antibacterial ability, and the method has extremely high clinical transformation value and market prospect.

The invention provides a modulation-doped aluminum nitride / diamond heterojunction material and a preparation method, and belongs to the technical field of semiconductors, and the preparation method comprises the following steps: preparing a hydrogen terminal layer on a diamond substrate to form a hydrogen terminal diamond substrate; growing an intrinsic aluminum nitride layer on the hydrogen terminal layer in an oriented manner; and modulating and growing a magnesium-doped aluminum nitride functional layer on the intrinsic aluminum nitride layer to form a hierarchical interface charge transport channel. According to the preparation method of the modulation-doped aluminum nitride / diamond heterojunction material provided by the invention, directional regulation and control of interface carriers are realized through hierarchical structural design of the surface of the hydrogen terminal diamond in combination with precise process control of pulse laser deposition, the carrier mobility and charge transport efficiency of the heterojunction are remarkably improved, and the performance of the material is improved. The aluminum nitride / diamond heterojunction material with high electrical characteristics is obtained, and the technical contradiction that process feasibility and electrical property optimization cannot be considered in the prior art is solved.

The invention belongs to the technical field of electronic materials, and discloses a magnesium-strontium double-doped calcium fluoride crystal and a preparation method and application thereof.The method comprises the steps that firstly, disodium ethylene diamine tetraacetate is chelated with calcium and magnesium ions, and the calcium and magnesium ions and villiaumite are subjected to a coordination exchange reaction to prepare a magnesium-doped calcium fluoride microsphere precursor; regulating and controlling hydrolysis of 3-aminopropyltriethoxysilane through an absolute ethyl alcohol-deionized water mixed solvent, and realizing uniform anchoring and deposition of strontium ions by virtue of an interface connection effect of the 3-aminopropyltriethoxysilane, so as to construct a magnesium-strontium double-doped precursor with a core-shell structure; carrying out hot pressed sintering in a CF4 / Ar mixed atmosphere to obtain a high-density polycrystalline blank; and finally, finishing crystal oriented growth by adopting a Bridgman-Stockbarger method. Through the synergistic effect of the components in the whole process, gradient uniform doping of magnesium and strontium ions is achieved, lattice distortion is effectively eliminated, the optical uniformity, the anti-laser-damage threshold value and the mechanical stability of the crystal are improved, and the prepared crystal can be widely applied to manufacturing of special electronic materials such as semiconductor wafers and the like and has good industrialization prospects.

The invention discloses a doping regeneration method of a waste ternary material, and belongs to the technical field of lithium battery material regeneration. The doping regeneration method of the waste ternary material comprises the following steps: crushing a waste ternary positive plate, and sorting to respectively obtain a current collector and ternary powder; adding magnesium oxide into the ternary powder, mixing, carrying out mechanical fusion to obtain a ternary material containing a magnesium oxide coating layer, and carrying out first-stage sintering; and adding lithium salt into the sintered ternary material, and carrying out second-stage sintering. According to the method, the interface of the ineffective material is doped in a controllable and quantitative co-doping mode of Mg < 2 + > / F <->, a magnesium doping proportion formula and a sintering condition formula are established according to the Ni content, and repairing and regeneration of the medium-high nickel ternary material are completed. Wherein the introduced Mg < 2 + > / F <-> element forms a co-doped structure on an interface, a more stable interface structure is newly built, and the problems that the high-nickel ternary material is poor in solid-phase repair regeneration performance and low in quality are solved.

This invention discloses a preparation process for magnesium-doped modified nickel-iron-manganese-based precursor materials, belonging to the field of electrode material preparation. The invention includes the following steps: (1) solution preparation; (2) preparation of the reaction substrate; (3) feeding; (4) nucleation reaction; (5) growth reaction; (6) magnesium doping modification; (7) aging reaction; (8) washing; and (9) drying. This invention utilizes magnesium-modified doped nickel-iron-manganese-based materials and employs an intermittent process to prepare sodium electrode precursors. By controlling factors such as the solid content, flow rate, and pH value of the reactants, the structure and morphology of the crystals can be precisely controlled. Simultaneously, the particle size distribution of the precursor can be well adjusted, thereby preparing sodium electrode precursor materials with uniform particle size.

The invention discloses a lithium-sulfur battery diaphragm material and a preparation method thereof, the material is a magnesium-doped nickel oxide metal oxide, the preparation method comprises the following steps: (1) mixing and dissolving a magnesium source, a nickel source and resorcinol in deionized water, dropwise adding an acidic solution, and heating to 60-90 DEG C; (2) dropwise adding a formaldehyde solution, stirring until the solution is gelled into gel, and drying; and (3) carrying out heat preservation for 2-4 hours in a muffle furnace at 550-900 DEG C, and carrying out high-temperature calcination. The material is a hollow nano-microsphere composed of metal oxide nano-particles of magnesium-doped nickel oxide, the specific surface area of the material is large, the hollow porous structure can absorb polysulfide and catalytically convert the polysulfide at the same time, the shuttle effect of the polysulfide is inhibited through the adsorption-catalysis synergistic effect, and the adsorption-catalysis efficiency is improved. The redox reaction kinetics of the lithium-sulfur battery is enhanced, the high utilization rate of active substances is realized, and the cycling stability of the battery is greatly improved.

The present application relates to a kind of magnesium-metal co-doped prelithiation silicon-oxygen composite material and its preparation method and lithium ion battery.The preparation method includes the following specific steps: providing micron silicon powder, silicon dioxide and magnesium powder are ball milled and mixed, and lithium carboxymethyl cellulose is added to vacuum high-temperature sintering, to obtain magnesium-doped silicon monoxide precursor;Magnesium-doped silicon monoxide precursor is added to the solution of 1-10wt% metal salt, filtration, vacuum drying, carbonization after drying, to obtain magnesium-metal co-doped silicon-oxygen material;Magnesium-metal co-doped silicon-oxygen material and prelithiation agent are mixed, and high-temperature sintering is carried out to obtain prelithiation silicon-oxygen material;Prelithiation silicon-oxygen material and organic reagent are mixed and coated, dried to obtain magnesium-metal co-doped prelithiation silicon-oxygen composite material.The present application provides a kind of magnesium-metal co-doped prelithiation silicon-oxygen composite material and lithium ion battery with good power performance and excellent cycle performance.

The invention provides a silicon-based composite negative electrode material for an all-solid-state lithium battery and a preparation method of the silicon-based composite negative electrode material. The silicon-based composite negative electrode material for the all-solid-state lithium battery comprises the following components in percentage by mass: 55-90% of a silicon substrate, which comprises silicon powder or a silicon carbon material; the magnesium doping agent comprises magnesium powder and magnesium nitride, and the mass fraction of the magnesium doping agent is 5%-40%; and the auxiliary component comprises a conductive agent and an adhesive. According to the silicon-based composite negative electrode material for the all-solid-state lithium battery and the preparation method of the silicon-based composite negative electrode material, metal magnesium and magnesium nitride are doped into a silicon-based negative electrode, so that collaborative lithium storage of silicon and lithium deposition is realized, lithium dendrite growth can be effectively inhibited, interface contact is improved, rate performance is improved, and energy density and cycling stability are improved.

A vertical Ga₂O₃ metal-oxide-semiconductor field-effect transistor (MOSFET) is disclosed that includes a gallium oxide substrate, an undoped drift layer positioned on the substrate, and a magnesium-doped gallium oxide current blocking layer arranged on the drift layer. A source layer is positioned on the current blocking layer, and a trench extends through the source layer, the current blocking layer, and at least partially into the drift layer. A gate dielectric and gate contact are located within the trench. The device may include a source contact electrically connected to the source layer and a drain contact electrically connected to the substrate. Methods for forming the device include epitaxial growth and metal-organic chemical vapor deposition, with magnesium doping performed in-situ. The structure enables high-voltage operation with low leakage and improved breakdown characteristics for power electronics applications.

The application provides a magnesium-doped tin dioxide composite material and a preparation method and application thereof, and belongs to the technical field of lithium ion batteries. The magnesium-doped tin dioxide composite material is obtained by adopting a sol-gel method to perform carbon-coating treatment on tin by using a carbon source and then performing a hydrothermal reaction with magnesium. The magnesium-doped tin dioxide composite material realizes a synergistic lithium storage effect of magnesium and tin elements in the charging and discharging process by introducing the second-phase magnesium element. On the one hand, the volume expansion of the tin-based negative electrode material can be effectively relieved, powder agglomeration can be inhibited, and the material structure can be stabilized; on the other hand, the effect of providing electrochemical active sites can be achieved, the electrochemical performance of the negative electrode material can be further improved, and more possible ideas for the wide application of the tin-based negative electrode material are provided.

A device including an activated p-type layer comprising a III-Nitride based Mg-doped layer grown by vapor phase deposition or a growth method different from MBE. The p-type layer is activated through a sidewall of the p-type layer after the removal of defects from the sidewall thereby increasing a hole concentration in the p-type layer. In one or more examples, the device includes an active region between a first n-type layer and the p-type layer; a second n-type layer on the p-type layer; and a tunnel junction between the second n-type layer and the p-type layer, and the activated p-type layer has a hole concentration characterized by a current density of at least 100 Amps per centimeter square flowing between the first n-type layer and the second n-type layer in response to a voltage of 4 volts or less applied across the first n-type layer and the second n-type layer.

The application discloses a kind of rate type lithium iron phosphate positive electrode material, preparation method and battery thereof, first using hydrochloric acid dopamine to modify treatment to iron phosphate, improve the surface activity of iron phosphate, it is beneficial to subsequent cobalt, magnesium doping, can limit grain excessive growth in high-temperature sintering, and introduce nitrogen carbon in lithium iron phosphate inside, form carbon nitrogen coating layer, improve electronic conductivity;Then, using isopropyl tri (dioctyl pyrophosphoric acid acyl oxygen) titanate, cobalt oxide and magnesium oxide to prepare dopant, make cobalt, magnesium evenly doped into lithium iron phosphate crystal lattice to form phase doping, cobalt magnesium co-doped synergistically improve the electronic conductivity and structural stability of lithium iron phosphate material;Finally, using biomass carbon source β-cyclodextrin carries out carbon coating, forms uniform carbon layer on the surface of lithium iron phosphate, further improves the electrochemical performance of lithium iron phosphate;Lithium iron phosphate material prepared by the application also has good electrochemical performance under high rate.

Embodiments according to the present invention provide a high-quality E-mode GaN HEMT power semiconductor epitaxy wafer comprises a GaN channel region in which a 2DEG (2-dimensional electron gas) is formed; an AlGaN barrier region formed on the GaN channel region; and a p-type semiconductor region formed on the AlGaN barrier region, wherein the p-type semiconductor region has a first doping region having a minimum doping concentration at a boundary with the AlGaN barrier region and an increasing magnesium (Mg) doping concentration in a thickness direction, and a second doping region having the minimum doping concentration on a back surface of the AlGaN barrier region, in which the magnesium (Mg) doping concentration decreases in a thickness direction after passing a maximum doping concentration.

The application discloses a magnesium-aluminum co-modified manganese iron lithium phosphate positive electrode material and a preparation method and application thereof, and relates to the technical field of battery positive electrode material preparation. x Fe y Mg m Al n PO4, wherein 0.5<=x<0.7, 0.3<=y<0.5, 0.01<=m<=0.04, 0.005<=n<=0.02, and x+y+m+n=1. In the application, magnesium and aluminum are doped into transition metal sites, magnesium doping can effectively inhibit Jahn-Teller effect, and is helpful to stabilize the material crystal structure and improve the cycle stability; aluminum doping can introduce holes, and significantly improve the intrinsic conductivity of the material; and co-doping can simultaneously solve the problems of poor material stability and low conductivity.

The invention belongs to the technical field of integrated photonics and nonlinear optics, and particularly relates to a magnesium oxide doped film lithium niobate microcavity optical comb generation method. Firstly, a film lithium niobate material doped with 5 mol.% of magnesium oxide is adopted, the optical damage threshold of the film lithium niobate material is 130 times that of pure lithium niobate, and the high pumping power bearing capacity and the long-term operation stability of the microcavity are remarkably improved. Secondly, the Kerr soliton optical comb is generated in the two microcavity structures of the air cladding and the silicon dioxide in combination with the third-order nonlinearity of the material and dispersion optimization of the microcavity structures. The silicon dioxide cladding microcavity provides structural support for integration of functional units such as a subsequent thermal tuning electrode. Besides, the invention also verifies that the micro-cavity based on the material platform has a weak photorefractive effect and has the capability of generating soliton optical combs under low pumping power, which indicates that the micro-cavity has good engineering realizability and application potential.

The invention relates to a chemical vapor deposition technology for preparing a wide bandgap semiconductor material, and provides a hexagonal boron nitride film, a preparation method thereof, an energy band regulation and control method and a wide spectrum ultraviolet photoelectric detector. Magnesium nitride is used as a doping source, and the doping source is synchronously introduced to the epitaxy of an h-BN film by adopting a chemical vapor deposition method; in-situ doping of the magnesium element in an h-BN crystal lattice is achieved, and the forbidden band width of the h-BN film is regulated from 5.91 eV to 3.38 eV by controlling the magnesium doping concentration. According to the magnesium-doped h-BN film, a wide-spectrum ultraviolet photoelectric detector is prepared based on the magnesium-doped h-BN film, the ultraviolet light absorption range is widened to the wave band of 185-365 nm, and wide-spectrum and high-sensitivity ultraviolet detection is achieved. The doping process is controllable, the energy band regulation and control effect is remarkable, the spectral response limitation of an intrinsic h-BN-based detector is broken through, and the application of a photoelectric device in the fields of environmental monitoring, biochemical analysis and the like is promoted.

The application relates to the technical field of lithium batteries, in particular to a magnesium-doped and carbon nanotube-doubly-modified lithium manganese iron phosphate material and a preparation method. 2+ The material body phase structure stability is optimized by doping, the lattice stress is relieved, and the lithium ion diffusion rate is improved, a three-dimensional conductive network formed by CNTs connects the internal particles of the agglomerated particles and the external contact, and the two can synergistically reduce polarization and improve the rate performance; the material has less capacity attenuation and higher coulomb efficiency, and also has good lithium ion transmission effect, and the capacity is greatly improved.

The invention discloses an anti-ultraviolet fluorescent composite film and a preparation method thereof, and belongs to the technical field of polymer functional films. The preparation method comprises the following steps: mixing polyvinyl alcohol, a magnesium-doped carbon quantum dot solution and a plasticizer, and heating and dissolving to form a homogeneous solution; and carrying out defoaming, membrane preparation and drying treatment on the homogeneous solution to obtain the final ultraviolet-proof fluorescent composite membrane. Wherein the magnesium-doped carbon quantum dot solution is prepared from potato powder and water-soluble magnesium salt through a hydrothermal reaction. The ultraviolet-proof fluorescent composite film provided by the invention is non-toxic, and has good biocompatibility and biodegradability.

The present application relates to a kind of magnesium oxide doped chiral cobalt-based nanomaterial and its preparation method and application, belong to nanomaterial technical field.The preparation method of the present application includes the following steps: S1, the cobalt source solution, magnesium source solution and surfactant solution are dissolved in organic solvent, to obtain precursor solution;S2, adding penicillamine solution to precursor solution, chiral environment is induced by coordination interaction, to obtain chiral intermediate solution;S3, adding reducing agent to chiral intermediate solution and carrying out self-assembly reaction, by centrifugation, washing, vacuum drying, to obtain magnesium oxide doped chiral cobalt-based nanomaterial;The catalytic activity of the obtained material is high, stability is good, and has wide application prospect in asymmetric photocatalytic reaction.

The invention discloses a magnesium-doped copper-based layered perovskite anode material and a preparation method and application thereof, a magnesium element is mainly utilized to perform trace doping on a Pr2CuO4 material, the chemical formula is Pr2Cu1-xMgXO4 + delta, x is not less than 0.05 and not more than xlt; 0.2, and delta is oxygen vacancy. The magnesium-doped copper-based layered perovskite anode material can be prepared by an improved sol-gel method, and the anode material can be widely applied to the water electrolysis hydrogen production process of a solid oxide electrolytic cell (SOEC) and the power generation process of a solid oxide fuel cell (SOFC), so that the energy conversion efficiency and the long-term operation stability of a device are effectively improved. According to the invention, Mg is introduced to a Cu site, and the bond energy of Cu (Mg)-O and Pr-O-Cu (Mg) bonds is weakened, so that the formation of oxygen vacancies and interstitial oxygen is promoted, and the migration of interstitial oxygen in a bulk phase is accelerated, thereby reducing the polarization resistance of the solid oxide electrolytic cell.

This invention discloses a lithium titanium lanthanum lithium-coated magnesium-doped lithium cobalt oxide cathode material and its preparation method. The cathode material uses lithium cobalt oxide particles as a matrix, with lithium titanium lanthanum lithium-coated ...

The application discloses a lithium-rich reverse perovskite halide electrolyte, which comprises an inner core and a composite shell layer; the inner core is magnesium-doped reverse perovskite oxyhalide; the composite shell layer is coated on the surface of the inner core and is a composite system of fluorine-magnesium co-doped reverse perovskite oxyhalide, a high-conductivity polymer and a lithium salt; the magnesium doping amount of the magnesium-doped reverse perovskite oxyhalide is greater than that of the fluorine-magnesium co-doped reverse perovskite oxyhalide. The electrolyte of the application not only realizes high ionic conductivity and a wide electrochemical window, but also has excellent interface stability, flexibility and air resistance, and can meet the requirements of long-term cycle stability and reliability of electrolyte for all-solid-state lithium batteries.