Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Light emitting diode epitaxial wafer and manufacturing method therefor

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing luminous efficiency, etc., and achieve the effects of improving luminous efficiency, strong blocking effect, and increasing the number of holes

Active Publication Date: 2017-09-22
HC SEMITEK ZHEJIANG CO LTD
View PDF6 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] While the AlGaN layer effectively blocks electrons from being injected into the P-type GaN layer, it also blocks some holes from being injected into the MQW layer to radiate and recombine with electrons to emit light, which reduces the luminous efficiency of the LED.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light emitting diode epitaxial wafer and manufacturing method therefor
  • Light emitting diode epitaxial wafer and manufacturing method therefor
  • Light emitting diode epitaxial wafer and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] An embodiment of the present invention provides a light emitting diode epitaxial wafer, see figure 1 , the light-emitting diode epitaxial wafer includes a substrate 1 and a buffer layer 2, an undoped gallium nitride layer 3, an N-type gallium nitride layer 4, a multi-quantum well layer 5, and an electron blocking layer 6 sequentially stacked on the substrate 1 and P-type GaN layer 7 .

[0037] In this example, see figure 2 , the electron blocking layer 6 includes a first sublayer 61, a second sublayer 62, and a third sublayer 63 stacked in sequence, and the first sublayer 61 includes a plurality of first AlGaN layers 61a and a plurality of second AlGaN layers stacked alternately. AlGaN layer 61b, the second sublayer 62 includes a plurality of third AlGaN layers 62a and a plurality of first InGaN layers 62b alternately stacked, and the third sublayer 63 includes alternately stacked GaN layers 63a and The second InGaN layer 63b.

[0038] see Figure 3a , the doping c...

Embodiment 2

[0050] An embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer, which is suitable for manufacturing the light-emitting diode epitaxial wafer provided in Embodiment 1, see Figure 4 , the manufacturing method includes:

[0051] Step 201: Provide a substrate.

[0052] Step 202: sequentially growing a buffer layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer on the substrate.

[0053] In this embodiment, the electron blocking layer includes a first sublayer, a second sublayer, and a third sublayer stacked in sequence, and the first sublayer includes a plurality of first AlGaN layers and a plurality of second AlN layers stacked alternately. The gallium nitride layer, the second sub-layer includes a plurality of third aluminum gallium nitride layers and a plurality of first indium gallium nitride layers stacked alternately, and the third sublayer i...

Embodiment 3

[0068] An embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer, and the manufacturing method provided in this embodiment is a specific realization of the manufacturing method provided in Embodiment 2. In this embodiment, Veeco K465i or C4 Metal Organic Chemical Vapor Deposition (English: Metal Organic Chemical Vapor Deposition, abbreviated: MOCVD) equipment is used to realize the manufacture of LED epitaxial wafers. Using high-purity hydrogen (H 2 ) or high-purity nitrogen (N 2 ) or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As nitrogen source, trimethylgallium (TMGa) and triethylgallium (TEGa) as gallium source, trimethylindium (TMIn) as indium source, trimethylaluminum (TMAl) as aluminum source, silane (SiH4) as N-type dopant, magnesium dicene (CP 2 Mg) as a P-type dopant. The pressure of the reaction chamber is controlled at 100-600 torr.

[0069] Specifically, see ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method therefor, and belongs to the technical field of a semiconductor. The epitaxial wafer comprises a substrate, a buffer layer, a non-doped gallium nitride layer, an N type gallium nitride layer, a multi-quantum-well layer, an electron barrier layer and a P type gallium nitride layer; the electron barrier layer comprises a first sub layer, a second sub layer and a third sub layer; the first sub layer comprises multiple first aluminum gallium nitride layers and multiple second aluminum gallium nitride layers which are stacked alternately; the second sub layer comprises multiple third aluminum gallium nitride layers and multiple first indium gallium nitride layers which are stacked alternately; the third sub layer comprises gallium nitride layer and second indium gallium nitride layers which are stacked alternately; the aluminum doping concentration in the first aluminum gallium nitride layers and the second aluminum gallium nitride layers is greater than that in the third aluminum gallium nitride layers; the first indium gallium nitride layers, the gallium nitride layers and the second indium gallium nitride layers are all doped with magnesium; the magnesium doping concentration in the first indium gallium nitride layers is lower than that in the gallium nitride layers and the second indium gallium nitride layers. By virtue of the light emitting diode epitaxial wafer and the manufacturing method therefor, hole injection can be improved and LED light emitting efficiency can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. The chip is the core component of the LED, including epitaxial wafers and electrodes arranged on the epitaxial wafers. [0003] The existing LED epitaxial wafer includes a substrate and a buffer layer stacked on the substrate in sequence, an N-type gallium nitride layer, a multiple quantum well (English: Multiple Quantum Well, referred to as: MQW) layer, an electron blocking layer and a P-type nitride layer. gallium layer. Among them, the electrons provided by the N-type gallium nitride layer and the holes provided by the P-type gallium nitride layer are injected into the multi-quantum well layer for radiative recombination and light e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/14H01L33/32
CPCH01L33/0075H01L33/06H01L33/145H01L33/325
Inventor 从颖姚振胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com