The invention discloses a gallium nitride-based chip with a normal structure and a ceramic substrate. The gallium nitride-based chip comprises the ceramic substrate, a buffer layer and a gallium nitride-based epitaxial layer. The ceramic substrate may be an aluminum nitride ceramic substrate, an aluminum oxide ceramic substrate, silicon carbide ceramic substrate, a boron nitride ceramic substrate, a zirconium oxide ceramic substrate or a magnesium oxide ceramic substrate. The structure of the buffer layer may be a low-temperature aluminum nitride layer, a component layering structure, a high-temperature aluminum nitride layer, a medium layer or a combination thereof. The component layering structure comprises gallium nitride-aluminum gallium nitride-aluminum nitride (AlxGa1-xN), wherein X is more than or equal to 0 and less than or equal to 1. The medium layer has a single-layer or multi-layer structure, and comprises metal elements aluminum, titanium, vanadium, chromium, scandium, zirconium, hafnium, tungsten, thallium, cadmium, indium and gold, combinations of the metal elements, alloys of the metal elements and nitrides of the metal elements. The gallium nitride-based chip with a vertical structure and the ceramic substrate comprises a conductive support substrate and the gallium nitride-based epitaxial layer.