The invention discloses a Micro LED epitaxial structure and a preparation method thereof, and relates to the technical field of
semiconductor devices. The Micro LED epitaxial structure comprises a substrate, and a buffer layer, a U-GaN layer, an N-GaN layer, a multi-
quantum well layer, an
electron blocking layer, a P-GaN layer and a
contact layer which are sequentially stacked on the substrate, the
contact layer comprises a depletion layer and an annealing layer which are stacked in sequence; the depletion layer comprises a Mg-doped GaN layer and a Si-doped BGaN layer which are stacked in sequence; the annealing layer comprises a Ta2O5 layer, a Ga2O3 layer and a Mg
doping gradient (AlGa) 2O3 layer which are sequentially stacked. When the Micro LED epitaxial structure is used for preparing a
chip, the current transverse expansion capability can be improved, the
contact resistance can be reduced, the generation of an electric leakage channel can be reduced, and further the light emitting uniformity, the light emitting efficiency and the stability of the Micro LED
chip can be improved.