The embodiment of the present disclosure provides a light-emitting
diode with improved current spreading capability and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting
diode comprises a light-emitting structure, a first
passivation layer, a connecting
electrode layer, a second
passivation layer and a pad
electrode layer. The connecting
electrode layer comprises a plurality of first connecting electrodes and a plurality of second connecting electrodes arranged alternately and spaced apart in a strip shape in a first direction. The length direction of the first connecting electrodes and the second connecting electrodes is a second direction, and the first direction and the second direction intersect. Each first connecting electrode is electrically connected to a first
semiconductor layer in a plurality of grooves through a plurality of first through holes penetrating the first
passivation layer. Each second connecting electrode is electrically connected to a second
semiconductor layer through a plurality of second through holes penetrating the first passivation layer. The embodiment of the present disclosure can improve the light-emitting efficiency and reliability of the LED and reduce the driving
voltage of the LED.