LED epitaxial growth method suitable for small-spacing display screen
A technology of epitaxial growth and display screen, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of large blue shift of LED light-emitting wavelength, etc., and achieve the effects of improving brightness, alleviating lattice mismatch, and reducing internal electric field
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[0046] This embodiment adopts the LED epitaxial growth method suitable for small-pitch display screens provided by the present invention, adopts MOCVD to grow GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):
[0047] A LED multi-quantum well layer growth method for improving luminous efficiency, comprising sequentially: processing a sapphire substrate 1, growing a low-temperature buffer layer GaN layer 2, growing an un...
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