Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

LED epitaxial growth method suitable for small-spacing display screen

A technology of epitaxial growth and display screen, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of large blue shift of LED light-emitting wavelength, etc., and achieve the effects of improving brightness, alleviating lattice mismatch, and reducing internal electric field

Active Publication Date: 2020-10-13
XIANGNENG HUALEI OPTOELECTRONICS
View PDF14 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention solves the problem of large blue shift of LED light-emitting wavelength in the existing LED epitaxial growth by adopting a new multi-quantum well layer growth method, and at the same time improves the light-emitting efficiency of the LED, reduces the working voltage, and enhances the antistatic ability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED epitaxial growth method suitable for small-spacing display screen
  • LED epitaxial growth method suitable for small-spacing display screen
  • LED epitaxial growth method suitable for small-spacing display screen

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] This embodiment adopts the LED epitaxial growth method suitable for small-pitch display screens provided by the present invention, adopts MOCVD to grow GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):

[0047] A LED multi-quantum well layer growth method for improving luminous efficiency, comprising sequentially: processing a sapphire substrate 1, growing a low-temperature buffer layer GaN layer 2, growing an un...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The application discloses an LED epitaxial growth method suitable for a small-spacing display screen. The method comprises the following steps: processing a substrate; growing a low-temperature bufferlayer GaN; growing an undoped GaN layer; growing a Si-doped N type GaN layer; growing a multi-quantum well layer; growing an AlGaN electronic barrier layer; growing a Mg-doped P type GaN layer; and then performing cooling. The step of growing the multi-quantum well layer sequentially comprises Mg-doped pretreatment, InGaN cover layer growth, InGaN well layer growth, H2 atmosphere InGaN:Si layer growth, N2 atmosphere InGaN: Mg layer growth, H2 and N2 mixed atmosphere InGaN: Mg / Si layer growth, InGaN protective layer growth and a GaN barrier layer growth. The method provided by the invention solves the problem that the blue shift amount of the light emitting wavelength of the LED is large in the existing LED epitaxial growth, and the light emitting efficiency of the LED is improved, the working voltage is reduced and the anti-static capability is enhanced.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to an LED epitaxial growth method suitable for small-pitch display screens. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. As an efficient, environmentally friendly and green new solid-state lighting source, LED has been widely used in traffic lights, car lights, indoor and outdoor lighting, display screens and small-pitch display screens. [0003] The small-pitch display adopts pixel-level point control technology to realize the state control of the brightness, color reduction and uniformity of the display pixel unit. Small-pitch display screens require a small change in the luminous wavelength during the process of injecting different magnitudes of current to change the luminous intensity. [0004] In the current traditional LED epitaxial InGaN / GaN m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/00H01L33/06H01L33/14H01L33/32
CPCH01L33/007H01L33/06H01L33/145H01L33/325
Inventor 徐平王杰谢鹏杰周佐华
Owner XIANGNENG HUALEI OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com