The invention discloses a method for epitaxial growth of a
perovskite single crystal heterojunction. According to the method, a saturated acid solution of a specific solute is selected, heteroepitaxy is carried out on different types of
perovskite layers, a
perovskite lattice structure of a mother layer on the surface of a substrate is flexibly changed, the problem of
lattice mismatch caused by lattice
mutation at a
heterojunction due to heteroepitaxy is solved, the defect density of a material at the
heterojunction is reduced, and the performance of the device is improved. The heteroepitaxy yield is improved, and the epitaxial growth
crystal quality of the perovskite material is improved. The method comprises the following specific steps: putting a perovskite substrate into a specific saturated acid solution, cooling to separate out crystals, and carrying out heteroepitaxial growth. According to the method, the heteroepitaxy yield of the perovskite material is remarkably improved, the heterojunction defect density is reduced, and the method has wide application potential.