5results about How to "Reduce Mismatch Problems" patented technology

The invention discloses a zinc gallate film prepared by a two-step method, and a preparation method and application thereof, and belongs to the technical field of semiconductor materials. The invention provides a method for preparing a zinc gallate film through a two-step method. The method comprises the following steps that a C-face sapphire substrate is pretreated, surface impurities and water are removed, and a pretreated sapphire substrate is obtained; mixing the gallium acetylacetonate solution and the zinc acetylacetonate solution, adding hydrochloric acid, stirring until the mixture is completely dissolved, and standing to obtain supernatant liquid; under the normal pressure condition, inert gas is used as current-carrying gas, the supernatant liquid is subjected to ultrasonic atomization treatment and then conveyed to the surface of the pretreated sapphire substrate, a nucleating layer is formed through deposition at the temperature of 500-550 DEG C, then the temperature is increased to 600-650 DEG C, an epitaxial film is formed through deposition, and the single crystal spinel zinc gallate thin film is obtained. The zinc gallate thin film with higher quality is prepared through a two-step method.

The invention discloses a preparation method of a high-quality beta-Ga2O3 film based on Van der Waals epitaxial growth. The preparation method of the high-quality beta-Ga2O3 thin film comprises the following steps: S1, placing a fluorine crystal mica F-micro substrate in MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and growing a gallium oxide low-temperature nucleating layer on the substrate at a first temperature by taking triethyl gallium as a gallium source and O2 as an oxygen source; s2, taking triethyl gallium as a gallium source and O2 as an oxygen source, and growing a gallium oxide high-temperature epitaxial layer on the gallium oxide low-temperature nucleating layer at a second temperature to obtain the high-quality beta-Ga2O3 thin film, the second temperature is higher than the first temperature. According to the beta-Ga2O3 thin film prepared by the method, the crystal quality is equivalent to that of a thin film obtained by a traditional rigid sapphire substrate, the problem that a high-quality gallium oxide thin film is difficult to prepare by an organic flexible substrate is solved, and the beta-Ga2O3 thin film is separated from the substrate and can be transferred to any target substrate; and the solar-blind ultraviolet photoelectric detector with high performance, flexibility and a vertical structure can be constructed.

The application discloses a planar array FDA-MIMO radar main lobe interference suppression method, and the Capon technology is used to estimate target signal power to dynamically adjust a DL loading factor; based on eigenvalue distribution of a sample covariance matrix, an adaptive subspace dimension selection strategy is introduced to balance robustness and main lobe suppression performance under different mismatch conditions; the beamformer can adjust the projection subspace and the diagonal loading coefficient according to actual conditions, and can solve the mismatch problem of the steering vector caused by the distance-angle error, the array element position error, the frequency offset and the coherent local scattering, effectively suppress the main lobe interference while improving the beam robustness, obtain better SINR performance, and has wide application value and promotion prospect.

The invention discloses a method for epitaxial growth of a perovskite single crystal heterojunction. According to the method, a saturated acid solution of a specific solute is selected, heteroepitaxy is carried out on different types of perovskite layers, a perovskite lattice structure of a mother layer on the surface of a substrate is flexibly changed, the problem of lattice mismatch caused by lattice mutation at a heterojunction due to heteroepitaxy is solved, the defect density of a material at the heterojunction is reduced, and the performance of the device is improved. The heteroepitaxy yield is improved, and the epitaxial growth crystal quality of the perovskite material is improved. The method comprises the following specific steps: putting a perovskite substrate into a specific saturated acid solution, cooling to separate out crystals, and carrying out heteroepitaxial growth. According to the method, the heteroepitaxy yield of the perovskite material is remarkably improved, the heterojunction defect density is reduced, and the method has wide application potential.

The application belongs to the technical field of electrocatalytic hydrogen production, and particularly relates to an off-grid alkaline hydrogen production electrocatalyst coupled with a crystal lattice hydrogen and a gradient layered structure, a preparation method and application thereof. The application provides a low-cost and high-performance alkaline hydrogen production electrocatalyst and a preparation method thereof. The electrocatalyst adopts tungsten carbide (WC) as a carrier, and is compounded with oxygenophilic metal (Ni or Ru) and MnO2 to form a composite electrocatalyst with a gradient layered structure. The technical advantage lies in that the MnO2 / WC interface is used to optimize the de-intercalation process of the crystal lattice hydrogen, and the bottleneck of hydrogen desorption is solved; the Ru(Ni) / WC gradient layered interface is used to promote water molecule dissociation and enhance the anti-start-stop stability. Benefiting from the above-mentioned synergistic effect, the prepared Ru(Ni)-MnO2 / WC electrocatalyst exhibits excellent catalytic activity and outstanding long-term stability in alkaline HER.