Epitaxial wafer of light-emitting diode and preparation method of epitaxial wafer

Abstract

The invention discloses an epitaxial wafer of a light-emitting diode and a preparation method of the epitaxial wafer and belongs to the field of semiconductor optoelectronics. According to the method,an Al<x>Ga<1-x>N layer and an Al<y>Ga<1.5y>In<1-2.5y>N layer are sequentially arranged between an AlN layer and an undoped GaN layer, Al components in the Al<x>Ga<1-x>N layer and the Al<y>Ga<1.5y>In<1-2.5y>N layer can be within the ranges of 0.4<=x<=1 and 0.2<=y<=0.4, and when the Al components in the Al<x>Ga<1-x>N layer and the Al<y>Ga<1.5y>In<1-2.5y>N layer are within the ranges, lattice mismatch between the AlN layer and the undoped GaN layer can be relieved. Moreover, the Al component in the Al<x>Ga<1-x>N layer and the Al component in the Al<y>Ga<1.5y>In<1-2.5y>N layer are both graduallyreduced along the growing directions of the two layers, the Al components in the two layers are equal at the interface of the two layers, therefore, connection of the AlN layer and the undoped GaN layer can be well realized, defects generated due to lattice mismatch between the AlN layer and the undoped GaN layer are reduced, the crystal quality of the epitaxial wafer of the finally obtained light-emitting diode is improved, and the luminous efficiency of the finally obtained light-emitting diode is improved.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to an epitaxial wafer of a light emitting diode and a preparation method thereof. Background technique [0002] The epitaxial wafer is the basic structure for making light-emitting diodes. The structure of the epitaxial wafer includes a substrate and an epitaxial layer grown on the substrate. Wherein, the structure of the epitaxial layer mainly includes: an AlN layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer grown sequentially on the substrate. [0003] The setting of the AlN layer can relieve the large lattice mismatch between the substrate and the undoped GaN layer, so as to improve the overall crystal quality of the final epitaxial wafer, but the AlN layer relieves the large lattice mismatch between the substrate and the undoped GaN layer. The effect of the lattice mismatch between the layers is limited, so that the...

AI Technical Summary

Problems solved by technology

[0003] The setting of the AlN layer can relieve the large lattice mismatch between the substrate and the undoped GaN layer, so as to improve the overall crystal quality of the final epitaxial wafer, but the AlN layer relieves the large lattice mismatch between the substrate and the undoped GaN layer. The effect of lattice mismatch between layers is limited, so that there are still many crystal defects in the undoped GaN layer grown on the AlN layer, and the crystal quality of the final epitaxial wafer is still not ideal

Images