Light emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, which belong to the field of light emitting diode manufacturing. The AlGaN sub-layers and the first GaNsub-layers which are alternately stacked can release certain stress in the growth process, and dislocation defects accumulated in the first composite layer are few. The buffer layer further comprisesa second composite layer stacked on the first composite layer, and the structure of the second composite layer can be a second GaN sub-layer and a MgN sub-layer which are alternately stacked, and a second GaN sub-layer and a BN sub-layer which are alternately stacked. The Mg atoms and B atoms in the BN sub-layer are small in particle size, vacancies generated by defects and dislocations in crystals can be filled in the growth process, so that the formation of the dislocations and the defects is reduced, the crystal quality of the buffer layer is improved, and the luminous efficiency of the finally obtained light-emitting diode epitaxial wafer is also improved.

Description

technical field [0001] The invention relates to the field of light-emitting diode production, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] LED (English: Light Emitting Diode, Chinese: Light Emitting Diode), a light emitting diode is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, etc. Improving the luminous efficiency of chips is the goal that LEDs are constantly pursuing. [0003] The epitaxial wafer of a light emitting diode usually includes a substrate and an AlN layer, a GaN buffer layer, an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer grown sequentially on the substrate. The GaN buffer layer can alleviate the lattice mismatch between the...

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Problems solved by technology

[0004] However, when the GaN buffer layer itself grows on the AlN layer, it will also accumulate some dislocation defects, and these dislocation defects will extend to structures such as the n-type GaN layer, resulting in the final n-type GaN layer, multiple quantum well layer and p The crystal quality of the GaN layer has limited improvement

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