Light emitting diode epitaxial wafer and preparation method thereof

A technology of light-emitting diodes and epitaxial wafers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of improving the crystal quality of n-type GaN layers and p-type GaN layers

Active Publication Date: 2021-02-12
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology

[0004] However, when the GaN buffer layer itself grows on the AlN layer, it will also accumulate some dislocation defects, and these dislocation defects will extend to structures such as the n-type GaN layer, resulting in the final n-type GaN layer, multiple quantum well layer and p The crystal quality of the GaN layer has limited improvement

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  • Light emitting diode epitaxial wafer and preparation method thereof
  • Light emitting diode epitaxial wafer and preparation method thereof
  • Light emitting diode epitaxial wafer and preparation method thereof

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Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0035] figure 1 It is a schematic structural diagram of a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure. Refer to figure 1 It can be seen that the embodiment of the present disclosure provides a light-emitting diode epitaxial wafer, which includes a substrate 1 and an AlN layer 2, a buffer layer 3, an n-type GaN layer 4, and a multi-quantum well layer stacked on the substrate 1 in sequence. 5 and p-type GaN layer 6.

[0036] The buffer layer 3 includes a first composite layer 31 and a second composite layer 32 sequentially stacked on the substrate 1, the first composite layer 31 includes alternately stacked AlGaN sublayers 311 and first GaN sublayers 312, and the second composite layer 32 It...

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Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, which belong to the field of light emitting diode manufacturing. The AlGaN sub-layers and the first GaNsub-layers which are alternately stacked can release certain stress in the growth process, and dislocation defects accumulated in the first composite layer are few. The buffer layer further comprisesa second composite layer stacked on the first composite layer, and the structure of the second composite layer can be a second GaN sub-layer and a MgN sub-layer which are alternately stacked, and a second GaN sub-layer and a BN sub-layer which are alternately stacked. The Mg atoms and B atoms in the BN sub-layer are small in particle size, vacancies generated by defects and dislocations in crystals can be filled in the growth process, so that the formation of the dislocations and the defects is reduced, the crystal quality of the buffer layer is improved, and the luminous efficiency of the finally obtained light-emitting diode epitaxial wafer is also improved.

Description

technical field [0001] The invention relates to the field of light-emitting diode production, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] LED (English: Light Emitting Diode, Chinese: Light Emitting Diode), a light emitting diode is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, etc. Improving the luminous efficiency of chips is the goal that LEDs are constantly pursuing. [0003] The epitaxial wafer of a light emitting diode usually includes a substrate and an AlN layer, a GaN buffer layer, an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer grown sequentially on the substrate. The GaN buffer layer can alleviate the lattice mismatch between the...

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Application Information

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IPC IPC(8): H01L33/12H01L33/06H01L33/00
CPCH01L33/12H01L33/06H01L33/007
Inventor 洪威威王倩梅劲董彬忠吕蒙普
Owner HC SEMITEK ZHEJIANG CO LTD
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