2results about How to "Reduce dislocation defects" patented technology

The invention discloses a doping method and a semiconductor device, and relates to the technical field of semiconductors, and the doping method comprises the following steps: providing a reaction container which is provided with a reaction cavity, placing a to-be-processed object in the reaction cavity, introducing a doping gas into the reaction cavity, and carrying out supercritical processing, the doping method comprises the steps that a to-be-treated object is subjected to supercritical doping, a doping fluid in a supercritical state is obtained, so that the doping fluid permeates into the to-be-treated object, standing is carried out, the to-be-treated object is repaired or doped, and doping gas comprises medium gas and doping molecules. Defect repairing or doping, surface passivation and cleaning integrated treatment of the semiconductor material is achieved, and the structural quality and the electrical performance of the material are remarkably improved.

This invention provides an LED epitaxial structure and its fabrication method, comprising a substrate and an N-type semiconductor layer, a stress relief layer, a tunneling barrier layer, a quantum dot structure, and a P-type semiconductor layer sequentially stacked on the surface of the substrate; wherein, the stress relief layer is used to release stress and trap charge carriers, and includes alternating stacked quantum wells and quantum barriers; and the stress relief layer has a quantum confinement Stark effect to reduce radiative recombination of charge carriers in the stress relief layer, thereby promoting the entry of charge carriers into the quantum dot structure through the tunneling barrier layer, thereby improving the radiative recombination of charge carriers in the quantum dot structure.