4results about How to "Reduce dislocation defects" patented technology

The invention discloses a doping method and a semiconductor device, and relates to the technical field of semiconductors, and the doping method comprises the following steps: providing a reaction container which is provided with a reaction cavity, placing a to-be-processed object in the reaction cavity, introducing a doping gas into the reaction cavity, and carrying out supercritical processing, the doping method comprises the steps that a to-be-treated object is subjected to supercritical doping, a doping fluid in a supercritical state is obtained, so that the doping fluid permeates into the to-be-treated object, standing is carried out, the to-be-treated object is repaired or doped, and doping gas comprises medium gas and doping molecules. Defect repairing or doping, surface passivation and cleaning integrated treatment of the semiconductor material is achieved, and the structural quality and the electrical performance of the material are remarkably improved.

A high luminous efficiency LED epitaxial wafer structure belongs to the technical field of light emitting diodes, and comprises a substrate, and a buffer layer, an unintentional doping layer, an N-GaN layer, a first well layer, a second well layer, a built-in EBL layer, a quantum well light emitting layer, a P-type electron blocking layer and a P-GaN layer which are sequentially deposited on the substrate, the unintentional doping layer is a U-type GaN layer, the built-in EBL layer is an ALGaN layer, and the P-GaN layer is a P-type GaN layer; the temperature of the first well layer and the second well layer is increased in the epitaxial process, H2 is introduced into the first well layer and the H2 introduction amount of the first well layer is greater than that of the second well layer, so that the epitaxial quality of the quantum barrier is improved, and the dislocation defect is reduced; the built-in EBL layer is arranged, the built-in EBL layer is an ALGaN layer, electrons can be effectively blocked by utilizing the characteristic that the forbidden band width of AlGaN is large, and the electron utilization rate can be further improved; the interface processing layer is arranged, bottom layer derivation dislocation is eliminated through pause discontinuous barrier crystal annihilation, the lattice quality is improved, the composite luminous efficiency is improved, and finally the luminous efficiency of the product is greatly improved.

The present invention provides an off-axis crystal growth device, which belongs to the field of semiconductor technology, and includes a sealed chamber, a lower crucible and an upper crucible. The lower crucible is arranged in the sealed chamber and is used to hold silicon carbide powder. The top of the lower crucible is provided with a gas phase outlet. The bottom of the upper crucible is open and a seed crystal is arranged on the inner side of the top. The seed crystal is arranged coaxially with the upper crucible. The outer side of the top of the upper crucible is connected to a driving mechanism for rotating around its own axis under the drive of the driving mechanism. The upper crucible is arranged in the sealed chamber and is spaced apart from the lower crucible in the vertical direction. The axis of the upper crucible is spaced apart from the axis of the lower crucible in the horizontal direction. By adopting a split off-axis upper crucible and a lower crucible, and arranging the upper crucible to rotate around its own axis under the drive of the driving mechanism, the growth surface of the crystal can maintain a stable convex interface during the growth process, thereby reducing the defects of the silicon carbide crystal and improving the quality of the silicon carbide crystal.

This invention provides an LED epitaxial structure and its fabrication method, comprising a substrate and an N-type semiconductor layer, a stress relief layer, a tunneling barrier layer, a quantum dot structure, and a P-type semiconductor layer sequentially stacked on the surface of the substrate; wherein, the stress relief layer is used to release stress and trap charge carriers, and includes alternating stacked quantum wells and quantum barriers; and the stress relief layer has a quantum confinement Stark effect to reduce radiative recombination of charge carriers in the stress relief layer, thereby promoting the entry of charge carriers into the quantum dot structure through the tunneling barrier layer, thereby improving the radiative recombination of charge carriers in the quantum dot structure.