The invention discloses a preparation method of polycrystalline silicon. According to the method, the twin crystal growth control technology is adopted, the ordinary polycrystalline process is optimized, a heat insulation cage is quickly opened, and the opening of the heat insulation cage is adjusted to be 6-8cm; at the initial stage of growth of the crystal, the temperature of a heater is adjusted to be 1425-1440 DEG C, the heat insulation cage is slowly lifted, a layer of uniform dendritic crystal grows vertically on a nucleation source layer along the bottom of a crucible, then dendritic crystal is taken as the seed crystal, and vertically upward directionally grows to form the polycrystalline silicon. The polycrystalline silicon prepared by the invention contains a great quantity of twin crystals, as the twin crystals have the advantages that the interfacial energy of the twin crystals is low, the twin crystals are relatively more stable, and the like, and the polycrystalline silicon prepared by the method has the advantage of few dislocation defects, the battery efficiency of the polycrystalline silicon is higher than that of the ordinary polycrystalline silicon for 0.2-0.4%, the average battery efficiency of a whole silicon wafer reaches 17.5%, and the highest efficiency reaches 18.0%.