9 results about "Growth control" patented technology

The application discloses a kind of multispectral artificial simulation sunlight artificial climate chamber, it is related to the technical field of climate chamber, including base, the base top is fixedly connected with light house, the light house top is fixedly connected with roof, the roof top is provided with sunlight simulation mechanism, it is related to the technical field of climate chamber, by setting sunlight simulation mechanism, periodically poking elastic strip in the rotating process of poking plate, make swing plate slide and reciprocating swing in the outer wall of sliding strip, to realize the multispectral light strip of fixedly connected in the bottom of swing plate drives multispectral light source to swing with wind, simulate natural light angle change, make plant light more evenly, promote its stem leaf natural growth to light, effectively improve photosynthesis efficiency, avoid local strong light burn simultaneously, realize more close to natural environment's growth control.

The application discloses an industrial large model intelligent growth control platform based on big data, relates to the technical field of industrial equipment control, and comprises a data acquisition and storage module, an industrial big data model module, an intelligent control module and a platform management module; the industrial big data model module and the intelligent control module are used for carrying out real-time information analysis on industrial data, so as to give an early warning on potential risks in a production process, give an alarm in advance, and give enterprises enough time to take measures for prevention; and the equipment control parameters are regulated and controlled; when the equipment operation controller is subjected to external interference or internal parameter change, the self-adaptive control parameters can be automatically adjusted to resist the influences, so that the stability and reliability of the system are maintained; without complicated manual parameter adjustment for different situations, the accurate prediction and control on the production process are maintained through automatic adjustment and optimization, and the user is facilitated to operate and manage.

The present disclosure provides a single crystal silicon growth control method, device, equipment and medium; the method comprises: acquiring the measurable physical state parameters of the single crystal silicon growth equipment in the crystal pulling process in real time; inputting the measurable physical state parameters into the digital twin model, and predicting the unmeasurable physical state parameters in the crystal pulling process based on the measurable physical state parameters by the digital twin model; inputting the measurable physical state parameters and the unmeasurable physical state parameters into the deep reinforcement learning model, and outputting the control instruction of the single crystal silicon growth equipment by the deep reinforcement learning model.

The application relates to a crystal growth control method and device, electronic equipment and a storage medium. The method comprises the following steps: acquiring growth change data of a crystal in a specified growth stage and a visual diameter of the crystal, wherein the visual diameter is acquired based on an image acquisition device; determining a theoretical diameter of the crystal based on the growth change data and a growth control parameter of the crystal in the specified growth stage; correcting the visual diameter based on a first deviation corresponding to the theoretical diameter and the visual diameter to obtain a target diameter of the crystal; and adjusting the growth control parameter based on the target diameter to control the growth of the crystal based on the adjusted growth control parameter. Therefore, the stability of the diameter of the crystal in the constant-diameter growth stage can be effectively improved through accurate diameter control.

The present application relates to the technical field of spirulina culture, and discloses a preparation method of a photobiological photoreactor, which comprises the following steps: arranging a carbon dioxide sensor and an oxygen sensor in a transparent tank to collect a carbon dioxide concentration difference and an oxygen concentration difference in the transparent tank through the carbon dioxide sensor and the oxygen sensor; connecting an edge computing module with the carbon dioxide sensor and the oxygen sensor respectively to calculate a preset carboxylation enzyme carboxy oxygen ratio of spirulina in the transparent tank through the carbon dioxide concentration difference and the oxygen concentration difference; connecting the edge computing module with a growth control module in the transparent tank to configure an instruction generation function of the edge computing module for converting the preset carboxylation enzyme carboxy oxygen ratio into a regulation instruction of the growth control module; and after the transparent tank, the carbon dioxide sensor, the oxygen sensor, the edge computing module, the growth control module and the instruction generation function are deployed, the preparation of the photobiological photoreactor is realized. The present application can meet the real photosynthetic metabolism demand of spirulina.

Embodiments of the present application provide a crop production control method, device, system, electronic equipment, computer readable storage medium and computer program product. The method comprises: obtaining monitoring information of a current crop production area; determining growth indication information of the crops in the current crop production area based on the monitoring information, the growth indication information being used to indicate the growth of the crops; determining a growth control scheme for the current crop production area based on the growth indication information of the crops; and controlling the working of the growth control equipment corresponding to the current crop production area based on the growth control scheme. Embodiments of the present application aim to realize agricultural automation production with as little labor input as possible, or even without labor input, and are particularly suitable for agricultural production areas with insufficient labor in the future, and help the landing of the national digital rural strategy.

This application relates to the field of materials growth and discloses an epitaxial layer and a method for controlling its growth. The method includes: growing a gallium oxide film on the surface of a substrate and acquiring a reflective high-energy electron diffraction (HEED) image of the gallium oxide film in real time; determining the HEED intensity based on the HEED image and determining the relationship between the HEED intensity and the growth time of the gallium oxide film; comparing the relationship with a standard relationship between the HEED intensity and growth time during gallium oxide monolayer growth to determine the growth mode of the gallium oxide film. The method of this application does not rely on human experience for judgment and can accurately determine whether the gallium oxide film is grown as a monolayer, thus obtaining a gallium oxide film grown as a monolayer.

The application relates to a large-size yttrium lithium fluoride single crystal growth system and process, and belongs to the technical field of artificial crystal growth. The system comprises a furnace body, a crucible, a temperature field subsystem, a vacuum subsystem, a mechanical transmission subsystem, an automatic growth control subsystem and a main control subsystem. The single crystal growth system provided by the application is cooperatively operated by the temperature field subsystem, the vacuum subsystem, the mechanical transmission subsystem and the automatic growth control subsystem under the unified coordination of the main control subsystem, so as to jointly create a crystal growth environment which can be accurately controlled and is stable and reliable. Through a pretreatment process comprising raw material pre-melting, cleaning and weighing and supplementing of raw materials, and in combination with the variable-speed rotation technology of the crucible in the growth process, the purity and the component uniformity of the melt are significantly improved.

The present application relates to the technical fields of semiconductor micro-nano structure growth control and computational materials, and discloses a multi-stage evolution identification and control method for selective area growth of quantum dots, comprising the following steps: step S1: constructing a system to be grown; step S2: starting the growth of a quantum dot selection area; step S3: acquiring characteristic parameters of the growth process; step S4: identifying a growth stage; step S5: setting a stage transition criterion; step S6: implementing a stage-responsive process control; and step S7: outputting a control result. By monitoring parameters such as the front position, local curvature, bump height and contact line state, the present application can clearly distinguish different growth stages. By setting criteria such as the critical curvature, critical bump height and critical driving force, the present application can predict or judge the starting time of overflow and lateral epitaxial growth. By responsive process regulation for different stages, the present application can reduce the fluctuations in the final size, aspect ratio and crystal face distribution of quantum dots.