32 results about "Growth control" patented technology

Methods and systems for fabricating semiconductor devices that use a cyclic pulse-etch-purge process, particularly after epitaxial film deposition, are provided. The process involves alternating flows of etch and purge gases (such as H2, N2, HCl, Cl2, and others) and optionally deposition gases to selectively remove unwanted doped silicon-containing material, shaping epitaxial features with precise profiles and minimizing defects like voids. The method can be performed in-situ in the same chamber as deposition and uses controlled cycles of gas pulses to achieve targeted source / drain feature formation. It supports various process parameters and chemistries, is compatible with standard nMOS and pMOS conditions, and can be implemented in automated semiconductor manufacturing environments.

The invention relates to a computational model, and discloses a method for training an encoder-decoder network and a system for predicting the growth state of a crop. A method of training an encoder-decoder network includes: receiving image pairs of the same crop and growth control conditions associated with growth of the crop; performing a forward diffusion process on the growth for a predetermined time step to diffuse the growth into an initial noise image; iteratively performing a reverse denoising process for a predetermined time step using an encoder-decoder network based on the initial noise image and a growth control condition to determine a growth predictor and a noise predictor associated with each time step; determining a loss function associated with the encoder-decoder network; a parameter of the encoder-decoder network is adjusted based on the loss function. According to the method, the limitation that the sequential logic of crop growth is not considered when the denoising diffusion model learns the input image and the target image is overcome, and the accuracy of crop growth prediction is improved.

Methods and systems for fabricating semiconductor devices that use a cyclic pulse-etch-purge process, particularly after epitaxial film deposition, are provided. The process involves alternating flows of etch and purge gases (such as H2, N2, HCI, CI2, and others) and optionally deposition gases to selectively remove unwanted doped silicon-containing material, shaping epitaxial features with precise profiles and minimizing defects like voids. The method can be performed in-situ in the same chamber as deposition and uses controlled cycles of gas pulses to achieve targeted source / drain feature formation. It supports various process parameters and chemistries, is compatible with standard nMOS and pMOS conditions, and can be implemented in automated semiconductor manufacturing environments.

The invention discloses a silicon carbide particle CVD growth control method and system based on multi-modal sensing, and relates to the technical field of intelligent manufacturing of new materials. The multi-modal data comprises a particle morphology image, process parameters and crystal form characterization data; identifying the particle morphology image to obtain a real-time particle size; the particle size deviation is calculated based on the real-time particle size, a crystal form optimization mark is calculated based on the crystal form characterization data, if the particle size deviation is larger than a preset particle size deviation threshold value or the crystal form optimization mark is true, an improved AI decision engine is triggered to make a compensation decision, and the optimal adjusting amount of the technological parameters is obtained and executed; through multi-source real-time feedback, an improved AI decision engine and multi-objective optimization, the problems of over-wide particle size distribution and high energy consumption of a traditional process are solved.

The application discloses a kind of multispectral artificial simulation sunlight artificial climate chamber, it is related to the technical field of climate chamber, including base, the base top is fixedly connected with light house, the light house top is fixedly connected with roof, the roof top is provided with sunlight simulation mechanism, it is related to the technical field of climate chamber, by setting sunlight simulation mechanism, periodically poking elastic strip in the rotating process of poking plate, make swing plate slide and reciprocating swing in the outer wall of sliding strip, to realize the multispectral light strip of fixedly connected in the bottom of swing plate drives multispectral light source to swing with wind, simulate natural light angle change, make plant light more evenly, promote its stem leaf natural growth to light, effectively improve photosynthesis efficiency, avoid local strong light burn simultaneously, realize more close to natural environment's growth control.

The application discloses an industrial large model intelligent growth control platform based on big data, relates to the technical field of industrial equipment control, and comprises a data acquisition and storage module, an industrial big data model module, an intelligent control module and a platform management module; the industrial big data model module and the intelligent control module are used for carrying out real-time information analysis on industrial data, so as to give an early warning on potential risks in a production process, give an alarm in advance, and give enterprises enough time to take measures for prevention; and the equipment control parameters are regulated and controlled; when the equipment operation controller is subjected to external interference or internal parameter change, the self-adaptive control parameters can be automatically adjusted to resist the influences, so that the stability and reliability of the system are maintained; without complicated manual parameter adjustment for different situations, the accurate prediction and control on the production process are maintained through automatic adjustment and optimization, and the user is facilitated to operate and manage.

The application discloses a growth control method and device of a light emitting diode epitaxial wafer and a readable storage medium, relates to the technical field of semiconductors, and comprises the following steps: acquiring wavelength information and warping information of the epitaxial wafer output in each furnace cycle; calculating first correlation information of a graphite disc in each furnace cycle; calculating mean wavelength information of the epitaxial wafer output in each furnace cycle; calculating second correlation information of the graphite disc; calculating mean warping information of the epitaxial wafer output in each furnace cycle; calculating warping compensation temperature of the epitaxial wafer output in each furnace cycle according to preset target warping information, the mean warping information, the first correlation information and the second correlation information; calculating a wavelength difference value of the epitaxial wafer in the graphite disc according to the mean wavelength information and preset target wavelength information; calculating temperature adjustment information according to the wavelength difference value, the second correlation information, the warping compensation temperature and a preset adjustment factor; and adjusting preset temperature information of the graphite disc according to the temperature adjustment information. By adopting the application, the wavelength yield of products can be improved.

The application provides an epitaxial growth control method and device, computer equipment and a storage medium. The application uses a supercontinuum laser light source to irradiate the surface of a wafer to be measured and a reference irradiation surface to obtain a reflected light signal; the reflected light signal is synchronously scanned and filtered to output two narrow-band lights; the two narrow-band lights are converted into electrical signals and then subjected to differential operation, and the reflectivity of the wafer to be measured is calculated according to the differential result; the growth parameters of the epitaxial layer are determined based on the reflectivity, and the process parameters of the reaction cavity are adjusted according to the growth parameters to control the epitaxial growth of the wafer to be measured. The supercontinuum laser light source can scan multiple characteristic wavelengths in one process step, realizes the synchronous monitoring of multiple growth parameters, meets the monitoring requirements of complex epitaxial structures; in addition, the common-mode noise in the measurement process is eliminated in real time by using the double-beam differential measurement technology, the signal-to-noise ratio is greatly improved, the measurement accuracy is improved, and the precise control of epitaxial growth is realized.

The invention provides a growth control method and device of a single crystal silicon rod, a medium and a single crystal furnace, and the method comprises the following steps: in the growth process of the single crystal silicon rod, obtaining diameter information of the single crystal silicon rod in real time; according to the geometric parameters and the diameter information of the flow guide component, the effective gas sweeping area of the melt surface is obtained; obtaining the volume flow rate of the process gas currently supplied into the single crystal furnace; acquiring real-time surface area flux based on the volume flow and the effective gas swept area; according to the comparison result of the real-time surface area flux and the target surface area flux, the volume flow rate and / or the vertical position of the flow guiding component relative to the melt surface are / is adjusted, so that the difference between the real-time surface area flux and the target surface area flux is smaller than a set threshold value.

The invention discloses a self-growing robot based on chemical reaction driving and a growth control method thereof, and relates to the field of bionic flexible robots, and the self-growing robot comprises a driving storage mechanism, a to-be-grown part of a self-growing robot body and a control module. The driving storage mechanism comprises three chambers which are communicated in sequence, wherein the first chamber is used for storing and releasing a part to be grown; a second reactant is stored in the second chamber; the third chamber stores a first reactant. The first reactant and the second reactant are subjected to chemical reaction in the second chamber to generate gas, and the gas enters the first chamber to drive the part to be grown to turn outwards from the outlet plug to grow. And the control module controls the stepping motor to synchronously release the material. Through an integrated chemical reaction driving mode, dependence on an external air source is eliminated, mooring-free, compact and highly autonomous systems are achieved, and deployment flexibility and motion adaptability of the robot in a narrow and complex environment are remarkably improved.

The invention discloses a molecular beam epitaxy tellurium-cadmium-mercury film growth control method based on RHEED spot intensity real-time feedback. The method comprises the following steps: selecting a specific crystal orientation reflection spot and monitoring the intensity of the specific crystal orientation reflection spot; setting growth parameters, and determining an initial growth temperature, a temperature interval and an adjustment step length based on a Hg / Te ratio; growing at the initial temperature to obtain an RHEED spot intensity initial value; after surface resetting, the temperature is adjusted according to the step length for secondary growth, and the strength is obtained and corrected; comparing the initial value with the corrected intensity, judging the temperature adjusting direction, and repeating the steps of surface resetting, growing, intensity obtaining and correcting in the correct direction. Under unknown growth conditions (any Hg / Te), multiple growth is carried out on the same substrate by using different growth temperatures after multiple surface resetting, and the optimal growth temperature is determined according to feedback of RHEED spot intensity. The method is used for guiding the preparation of the tellurium-cadmium-mercury thin film and improving the repeatability of material preparation, the controllability of process adjustment and the mobility of the process among equipment.

The utility model relates to field plant cultivation device technical field, especially the laser light supplementing device for field crop growth control. Including: power supply module, control circuit module, laser lighting module and support column, solar power generation panel, energy storage unit and laser emitter are electrically connected with control circuit module, the laser lighting module below is fixed in the support column top, solar power generation panel photoelectric conversion charges the energy storage unit, the laser lighting module includes laser emitter, free curved surface lens array, light -transmitting panel and cover body, and the light -transmitting panel sleeve is connected in the free curved surface lens array outside outside laser emitter's emission end cover, the light -transmitting panel top is sealedly connected with cover body, and the laser beam that laser emitter sent is transmitted and shaping through the free curved surface lens array, and rectangular laser light beam is shot from the light -transmitting panel. Advantages lie in: the light supplementing device improves the energy uniformity of light beam, reduces energy consumption, and the irradiation distance is far.

The present disclosure provides a single crystal silicon growth control method, device, equipment and medium; the method comprises: acquiring the measurable physical state parameters of the single crystal silicon growth equipment in the crystal pulling process in real time; inputting the measurable physical state parameters into the digital twin model, and predicting the unmeasurable physical state parameters in the crystal pulling process based on the measurable physical state parameters by the digital twin model; inputting the measurable physical state parameters and the unmeasurable physical state parameters into the deep reinforcement learning model, and outputting the control instruction of the single crystal silicon growth equipment by the deep reinforcement learning model.

The invention relates to a device and a method for preparing a mycelium plate from edible mushroom waste. A connecting plate is fixedly installed at the output end of the lower portion of the electric push rod, a pressing block matched with an opening in the top of the forming mold is fixedly installed below the connecting plate, an air inlet cavity is formed below the lower supporting and limiting heating plate, a controller is installed in the air inlet cavity, and a circulating air outlet cavity is formed above the upper supporting and limiting heating plate. A circulating exhaust fan is mounted at the top of the integrated growth control box; growth culture of mycelia is accelerated, the time of the whole process is shortened, the growth cycle of the mycelia is greatly shortened, and the large-scale and batch production requirements are met.

The application provides a gallium nitride high-power device multilayer structure growth control method and system, relates to the technical field of semiconductors, and comprises sequentially epitaxially growing a nucleation layer, a transition layer and a gradient stress buffer layer group on a substrate, controlling the difference value of the lattice mismatch degree of the gallium aluminum nitride layer in the buffer layer to decrease by synchronously regulating the growth temperature and the trimethyl gallium flow, and dynamically determining the thickness of a gallium nitride insertion layer based on the accumulated elastic strain energy to release the strain. Then, a stress modulation layer composed of a gallium aluminum nitride superlattice with the aluminum component periodically fluctuating is grown, the periodic stress field of the stress modulation layer is used to block the upward extension of dislocation defects, and finally, a channel layer and a barrier layer are grown. The method can effectively reduce the defect density of the epitaxial layer and improve the performance and reliability of the gallium nitride high-power device.

The application relates to a crystal growth control method and device, electronic equipment and a storage medium. The method comprises the following steps: acquiring growth change data of a crystal in a specified growth stage and a visual diameter of the crystal, wherein the visual diameter is acquired based on an image acquisition device; determining a theoretical diameter of the crystal based on the growth change data and a growth control parameter of the crystal in the specified growth stage; correcting the visual diameter based on a first deviation corresponding to the theoretical diameter and the visual diameter to obtain a target diameter of the crystal; and adjusting the growth control parameter based on the target diameter to control the growth of the crystal based on the adjusted growth control parameter. Therefore, the stability of the diameter of the crystal in the constant-diameter growth stage can be effectively improved through accurate diameter control.

To provide a character keeping system, a character keeping method and a character keeping program for enabling a player to continuously and naturally enjoy a game by using information related with the sleep of the player in a real world for the growth of a character.SOLUTION: The character keeping system 1 comprises a sleep information storage component 440 that stores sleep information, a character information storage component 444 that stores character growth conditions, a keeping controller 14 that associates a character ID having a specific growth condition with player information, a growth controller 18 that uses at least part of the sleep information to change a specific parameter of the character, a growth determination component 20 that determines whether or not the specific growth condition of the character has been achieved by changing the specific parameter, and a return controller 22 that cancels the association of the character ID with the player information when the specific growth condition has been achieved.SELECTED DRAWING: Figure 1

The present application relates to the technical field of spirulina culture, and discloses a preparation method of a photobiological photoreactor, which comprises the following steps: arranging a carbon dioxide sensor and an oxygen sensor in a transparent tank to collect a carbon dioxide concentration difference and an oxygen concentration difference in the transparent tank through the carbon dioxide sensor and the oxygen sensor; connecting an edge computing module with the carbon dioxide sensor and the oxygen sensor respectively to calculate a preset carboxylation enzyme carboxy oxygen ratio of spirulina in the transparent tank through the carbon dioxide concentration difference and the oxygen concentration difference; connecting the edge computing module with a growth control module in the transparent tank to configure an instruction generation function of the edge computing module for converting the preset carboxylation enzyme carboxy oxygen ratio into a regulation instruction of the growth control module; and after the transparent tank, the carbon dioxide sensor, the oxygen sensor, the edge computing module, the growth control module and the instruction generation function are deployed, the preparation of the photobiological photoreactor is realized. The present application can meet the real photosynthetic metabolism demand of spirulina.

Embodiments of the present application provide a crop production control method, device, system, electronic equipment, computer readable storage medium and computer program product. The method comprises: obtaining monitoring information of a current crop production area; determining growth indication information of the crops in the current crop production area based on the monitoring information, the growth indication information being used to indicate the growth of the crops; determining a growth control scheme for the current crop production area based on the growth indication information of the crops; and controlling the working of the growth control equipment corresponding to the current crop production area based on the growth control scheme. Embodiments of the present application aim to realize agricultural automation production with as little labor input as possible, or even without labor input, and are particularly suitable for agricultural production areas with insufficient labor in the future, and help the landing of the national digital rural strategy.

The present application relates to a computing model, and discloses a method for training an encoder-decoder network and a system for predicting a growth state of crops. The method for training an encoder-decoder network comprises: receiving an image pair of the same crop and a growth control condition associated with the growth of the crop; performing a forward diffusion process on the growth amount for a predetermined time step to diffuse the growth amount into an initial noise image; based on the initial noise image and the growth control condition, iteratively performing a reverse denoising process using the encoder-decoder network for a predetermined time step to determine a growth amount prediction value and a noise prediction value associated with each time step; determining a loss function associated with the encoder-decoder network; and adjusting parameters of the encoder-decoder network based on the loss function. The method according to the present application overcomes the limitation that the denoising diffusion model does not consider the time sequence logic of crop growth when learning input images and target images, and improves the accuracy of crop growth prediction.

The invention provides an n-type 4H-SiC epitaxial growth control method and device, electronic equipment and a storage medium, and relates to the technical field of semiconductor material epitaxial growth. The method comprises the following steps: in an epitaxial layer growth stage, taking out methylhydrazine molecules in methylhydrazine liquid pre-stored in a doping source input part through hydrogen, and inputting the methylhydrazine molecules into a reaction chamber, so that methylhydrazine is used as an n-type doping source to grow an epitaxial layer on a substrate. The method aims at solving the problems that in the prior art, when nitrogen is adopted as an n-type doping source, the doping concentration consistency is poor, and when ammonia is adopted as the n-type doping source, a gas path system is complex, the equipment cost is high, the operation and maintenance difficulty is large, and the pollution risk is possibly introduced. According to the invention, methylhydrazine is adopted as the doping source, so that a gas path can be simplified, the doping concentration can be accurately regulated and controlled, and meanwhile, the residual nitrogen element in the growth environment can be reduced, thereby effectively reducing the fluctuation of the nitrogen element concentration in the epitaxial layer, and further realizing stable doping.

The application provides an n-type 4H-SiC epitaxial growth control method and device, electronic equipment and storage medium, and relates to the technical field of semiconductor material epitaxial growth. The steps of the method comprise: in the epitaxial layer growth stage, methylhydrazine molecules in the methylhydrazine liquid stored in the doping source input part in advance are taken out and input into the reaction chamber by hydrogen, so that the methylhydrazine grows the epitaxial layer on the substrate as an n-type doping source. The method aims to solve the problems in the prior art that when nitrogen is used as an n-type doping source, the doping concentration consistency is poor, and when ammonia is used as an n-type doping source, the gas path system is complex, the equipment cost is high, the operation and maintenance are difficult, and the pollution risk may be introduced. The application uses methylhydrazine as a doping source to simplify the gas path and accurately control the doping concentration, and at the same time, the residual of nitrogen elements in the growth environment can be reduced, thereby effectively reducing the fluctuation of the nitrogen element concentration in the epitaxial layer, and stable doping is realized.

The application relates to the field of semiconductor technology and discloses a silicon carbide epitaxial wafer detection method and device. The method comprises the following steps: an automatic conveying unit automatically transports an epitaxial wafer to a detection unit; the detection unit detects the film thickness and the carrier concentration of the epitaxial wafer and sends the detection result to a data acquisition and processing unit; the data acquisition and processing unit compares and analyzes the received data with preset target data; if the deviation is within the allowable range, no adjustment is made; if the deviation is not within the allowable range, the calculation result is fed back to an epitaxial growth control unit to adjust the process parameters of an epitaxial device. The method automatically takes and transports the epitaxial wafer by using the conveying unit, improves the production efficiency, and can improve the wafer consistency of the epitaxial wafer.

This application relates to the field of materials growth and discloses an epitaxial layer and a method for controlling its growth. The method includes: growing a gallium oxide film on the surface of a substrate and acquiring a reflective high-energy electron diffraction (HEED) image of the gallium oxide film in real time; determining the HEED intensity based on the HEED image and determining the relationship between the HEED intensity and the growth time of the gallium oxide film; comparing the relationship with a standard relationship between the HEED intensity and growth time during gallium oxide monolayer growth to determine the growth mode of the gallium oxide film. The method of this application does not rely on human experience for judgment and can accurately determine whether the gallium oxide film is grown as a monolayer, thus obtaining a gallium oxide film grown as a monolayer.

The application relates to a large-size yttrium lithium fluoride single crystal growth system and process, and belongs to the technical field of artificial crystal growth. The system comprises a furnace body, a crucible, a temperature field subsystem, a vacuum subsystem, a mechanical transmission subsystem, an automatic growth control subsystem and a main control subsystem. The single crystal growth system provided by the application is cooperatively operated by the temperature field subsystem, the vacuum subsystem, the mechanical transmission subsystem and the automatic growth control subsystem under the unified coordination of the main control subsystem, so as to jointly create a crystal growth environment which can be accurately controlled and is stable and reliable. Through a pretreatment process comprising raw material pre-melting, cleaning and weighing and supplementing of raw materials, and in combination with the variable-speed rotation technology of the crucible in the growth process, the purity and the component uniformity of the melt are significantly improved.

The present application relates to the technical field of crystal growth apparatuses, and discloses an apparatus for growing a large-size gallium oxide crystal, and a growth method. The apparatus comprises: a single crystal furnace body comprising a seed crystal lifting and rotating mechanism; a thermal insulation device that can be arranged in the single crystal furnace, the thermal insulation device comprising a thermal insulation container and a thermal insulation top plate; a metal crucible that can be placed in the thermal insulation container; a first driving mechanism used for driving the metal crucible to rotate; an induction heating coil sleeved outside the thermal insulation container; and a horizontally arranged conical ring connected to an output end of the seed crystal lifting and rotating mechanism by means of a connecting assembly. The growth method comprises: first, melting a gallium oxide raw material, lowering a conical ring, then generating a high-quality seed crystal by means of controlled nucleation, and expanding the seed crystal to form a crystal facet; upon confirming that the crystal facet is in stable contact with the conical ring, lifting the conical ring for equal-diameter growth control; and when the crystal reaches a predetermined size, terminating the process. The present invention can effectively avoid twin defects in traditional edge-defined film-fed growth or Czochralski methods, allowing for growth of crystals having higher quality.

The present application relates to the technical fields of semiconductor micro-nano structure growth control and computational materials, and discloses a multi-stage evolution identification and control method for selective area growth of quantum dots, comprising the following steps: step S1: constructing a system to be grown; step S2: starting the growth of a quantum dot selection area; step S3: acquiring characteristic parameters of the growth process; step S4: identifying a growth stage; step S5: setting a stage transition criterion; step S6: implementing a stage-responsive process control; and step S7: outputting a control result. By monitoring parameters such as the front position, local curvature, bump height and contact line state, the present application can clearly distinguish different growth stages. By setting criteria such as the critical curvature, critical bump height and critical driving force, the present application can predict or judge the starting time of overflow and lateral epitaxial growth. By responsive process regulation for different stages, the present application can reduce the fluctuations in the final size, aspect ratio and crystal face distribution of quantum dots.

The invention relates to a sweet potato vigorous growth control machine which comprises a trolley, a beating mechanism capable of being adjusted in a swinging mode and used for beating and damaging sweet potato seedlings in furrows is installed on a chassis of the trolley, and a power mechanism used for driving the beating mechanism to swing is further installed on the chassis. The beating mechanism comprises a swing frame and a beating assembly which is installed on the swing frame and can synchronously swing along with the swing frame, and a supporting mechanism used for installing the swing frame is arranged on the chassis. The beating mechanism is not fixed, and the working range of the beating mechanism can be flexibly adjusted according to the actual width of furrows in different fields. By means of the design, it is guaranteed that beating force can accurately and effectively act on seedling vines in furrows, unnecessary damage to main ridges and rhizomes of sweet potatoes is avoided, the quality and safety of vigorous growth control operation are guaranteed, and the adaptability of the device to different planting specifications is improved.

Disclosed herein are a method, a system, and a device for controlling a crystal growth device. The method includes: obtaining historical growth data of at least one crystal growth device, the historical growth data including historical growth control data and historical growth result data; and determining a control mode of a target crystal growth device based on the historical growth data and a target growth result, the control mode including at least one of a temperature control mode and a power control mode.

The invention discloses a growth control method and device for a light-emitting diode epitaxial wafer and a readable storage medium, and relates to the technical field of semiconductors, and the method comprises the steps: obtaining the wavelength information and warping information of an epitaxial wafer produced in each furnace; first associated information of the graphite disc in each heat is calculated; calculating mean wavelength information of the epitaxial wafer produced in each furnace; calculating second associated information of the graphite disc; calculating mean warping information of the epitaxial wafer produced in each furnace; according to preset target warping information, the mean value warping information, the first correlation information and the second correlation information, the warping compensation temperature of the epitaxial wafer produced in each furnace is calculated; calculating a wavelength difference value of the epitaxial wafer in the graphite plate according to the mean wavelength information and preset target wavelength information; calculating temperature adjustment information according to the wavelength difference value, the second correlation information, the warping compensation temperature and a preset adjustment factor; and adjusting preset temperature information of the graphite plate according to the temperature adjustment information. According to the invention, the product wavelength yield can be improved.