81 results about "Growth control" patented technology

The invention discloses an AI-assisted carbon nanotube growth control method and system, and relates to the technical field of control systems. Comprising the steps that a three-dimensional AI virtual platform builds a carbon nano tube model by collecting carbon nano tube growth data and environment data in unit time, the growth data comprise the growth rate, the direction and the diameter size, the environment data relates to gas flow and electric field intensity, the carbon nano tube model is mapped into a three-dimensional coordinate system, and the three-dimensional coordinate system is constructed; wherein the X axis, the Y axis and the Z axis respectively represent the length, the width and the height of the carbon nanotube, and recording initial coordinates. By using the three-dimensional AI virtual platform and the real-time data acquisition technology, the environment change in the growth process of the carbon nanotubes can be accurately captured, and the environment change can be quickly coped with during actual control by combining the growth data and dynamically adjusting the environment parameters in the growth process; and unstable growth or deviation caused by incapability of timely adjustment in a traditional method is avoided.

The invention discloses a self-adaptive carbon nanotube growth control scheme and system based on AI deep learning, and relates to the technical field of nano material manufacturing and regulation. Comprising the following steps: information acquisition: acquiring variable information of carbon nanotube growth and user requirements; and reference construction: generating carbon nanotube growth parameters under different lithium ion battery performance indexes through a reference library generation method to obtain a reference library. The reference library for storing the basic growth parameters and the basic battery performance is generated through the set reference library generation method, and the target relation between the single variable of the basic growth parameters and the basic battery performance is judged through the set recognition method. And matching the target growth parameters meeting the user requirements for the user according to the user requirements and the target relationship by matching the set matching adjustment method with the reference library, and adaptively formulating the target growth parameters meeting the user requirements for the user so as to reduce the workload of the user and improve the production and preparation efficiency of the carbon nanotubes.

Methods and systems for fabricating semiconductor devices that use a cyclic pulse-etch-purge process, particularly after epitaxial film deposition, are provided. The process involves alternating flows of etch and purge gases (such as H2, N2, HCl, Cl2, and others) and optionally deposition gases to selectively remove unwanted doped silicon-containing material, shaping epitaxial features with precise profiles and minimizing defects like voids. The method can be performed in-situ in the same chamber as deposition and uses controlled cycles of gas pulses to achieve targeted source / drain feature formation. It supports various process parameters and chemistries, is compatible with standard nMOS and pMOS conditions, and can be implemented in automated semiconductor manufacturing environments.

The invention provides an epitaxial growth control method and device, computer equipment and a storage medium. The epitaxial growth control method comprises the following steps: irradiating a wafer to be measured and the surface of a reference irradiation surface by adopting a super-continuum spectrum laser light source to obtain a reflected light signal; synchronously scanning and filtering the reflected light signal to output two paths of narrow-band light; the two paths of narrow-band light are converted into electric signals and then differential operation is carried out, and the reflectivity of the wafer to be measured is calculated according to a differential result; and determining growth parameters of the epitaxial layer based on the reflectivity, and adjusting process parameters of the reaction cavity according to the growth parameters so as to control epitaxial growth of the wafer to be tested. According to the super-continuum spectrum laser light source, multiple characteristic wavelengths can be scanned in one process step, synchronous monitoring of multiple growth parameters is achieved, and the monitoring requirement of a complex epitaxial structure is met; in addition, common-mode noise in the measurement process is eliminated in real time through the double-beam differential measurement technology, the signal-to-noise ratio is greatly increased, the measurement precision is improved, and accurate control over epitaxial growth is achieved.

The invention provides a monocrystalline silicon growth system and a growth control method, a monocrystalline silicon growth device in the monocrystalline silicon growth system comprises a crucible, a guide cylinder and a support, the support is mechanically connected with the crucible and the guide cylinder, and the support is used for supporting the guide cylinder to be suspended in the crucible; the crucible is used for bearing molten monocrystalline silicon; the bottom of the guide cylinder comprises a first hole and a second hole; the light output unit transmits light into the crucible through the first hole, the light is reflected at the liquid level of the monocrystalline silicon, the reflected light is transmitted to the light receiving unit through the second hole, and the control unit judges the distance between the liquid level of the monocrystalline silicon in the crucible and the guide cylinder according to the light received by the light receiving unit; the light output unit and the light receiving unit emit and receive light through the first hole and the second hole of the guide cylinder respectively, it can be guaranteed that the distance between the liquid level of monocrystalline silicon in the crucible and the guide cylinder can be accurately obtained, and the accurate obtaining of the distance is beneficial for improving defect control of monocrystalline silicon.

The invention discloses a self-growing continuum mechanical arm, and relates to the technical field of flexible mechanical arms. According to the self-growing continuum mechanical arm provided by the invention, through independent telescopic control of the first bending control ropes and the second bending control ropes, the supporting bone discs on the first joint body and the second joint body are driven to deflect independently, so that different joint bodies of the self-growing continuum mechanical arm can realize independent curl motion; the growth control ropes are arranged so that the self-growing continuum mechanical arm can extend and move in the head bending direction, the control ropes are matched so that the self-growing continuum mechanical arm can achieve multi-angle bending growth in a complex working environment, and meanwhile, the self-growing continuum mechanical arm has the comprehensive quality of high stability and high flexibility.

The invention provides a growth control method of monocrystalline silicon and a growth control device of monocrystalline silicon. The growth control method of the monocrystalline silicon comprises the following steps: in a pulling process of a monocrystalline silicon rod, acquiring a real-time pulling speed v of the monocrystalline silicon rod, and acquiring a real-time temperature gradient G at a solid-liquid growth interface of the monocrystalline silicon rod; and the real-time ratio of the real-time pulling speed v to the real-time temperature gradient G is calculated. And comparing the real-time ratio with a preset ratio range, and adjusting the real-time pulling speed v and / or the real-time temperature gradient G according to a comparison result, so that the real-time ratio is within the preset ratio range. According to the growth control method of the monocrystalline silicon, in-situ feedback control of the monocrystalline silicon in the growth process is realized, and the method is suitable for various different single crystal furnaces and crystal pulling processes. And exploration time and material consumption can be saved.

A laser assembly for controlling foliage growth including a body adapted to being mounted at a location in order to emit an axial direction defining laser pattern to establish a growth limiting boundary for any of a tree, shrub or like foliage. The laser pattern provides a high intensity light beam causing cellular damage to tissue of the foliage in order to retard growth into the affected area. The body further includes at least one eyepiece for issuing the laser pattern according to any of a pin-point or arcuate / sweep pattern. A clamp or post arrangement mounts the body in a multi-axial adjustable fashion.

The invention relates to a computational model, and discloses a method for training an encoder-decoder network and a system for predicting the growth state of a crop. A method of training an encoder-decoder network includes: receiving image pairs of the same crop and growth control conditions associated with growth of the crop; performing a forward diffusion process on the growth for a predetermined time step to diffuse the growth into an initial noise image; iteratively performing a reverse denoising process for a predetermined time step using an encoder-decoder network based on the initial noise image and a growth control condition to determine a growth predictor and a noise predictor associated with each time step; determining a loss function associated with the encoder-decoder network; a parameter of the encoder-decoder network is adjusted based on the loss function. According to the method, the limitation that the sequential logic of crop growth is not considered when the denoising diffusion model learns the input image and the target image is overcome, and the accuracy of crop growth prediction is improved.

Methods and systems for fabricating semiconductor devices that use a cyclic pulse-etch-purge process, particularly after epitaxial film deposition, are provided. The process involves alternating flows of etch and purge gases (such as H2, N2, HCI, CI2, and others) and optionally deposition gases to selectively remove unwanted doped silicon-containing material, shaping epitaxial features with precise profiles and minimizing defects like voids. The method can be performed in-situ in the same chamber as deposition and uses controlled cycles of gas pulses to achieve targeted source / drain feature formation. It supports various process parameters and chemistries, is compatible with standard nMOS and pMOS conditions, and can be implemented in automated semiconductor manufacturing environments.

The present invention discloses a nondestructive detection method and system for meat freshness based on an improved deep forest algorithm. The present invention constructs a layer-by-layer multi-layer cascade deep forest model. The input of the first layer of the random forest of the model is consistent with the input of the model, which is the pre-processed hyperspectral imaging data of chilled fresh mutton samples. Different candidate feature spaces are formed after calculation. In order to ensure the original features, they are spliced ​​with the pre-processed sample hyperspectral data as the input of the next layer. The output of the model is the freshness grade probability. In order to fully explore the correlation of multiple freshness evaluation indicators, the previous layer of candidate feature screening and layer growth control mechanism are added between each layer of the deep forest. While fully exploring the correlation of multiple freshness indicators of the sample, the number of layers of the model is determined to reduce the risk of model overfitting, so as to achieve the purpose of controlling the complexity of the model.

Semiconductor device comprising the following: a substrate (102) on which a gate structure (212) is formed, which has a trench (404) with opposing side faces (414) and a bottom surface (416) defined on the substrate (102), wherein the gate structure includes the following: a gate dielectric layer (216) arranged along the opposite side faces (414) and the bottom face (416); a growth control material (412) arranged on upper sections of the opposite side surfaces (414) of the gate structure (212), wherein the lateral thickness of the growth control material (412) decreases continuously from the upper surface downwards; and a gate electrode filling material (418) arranged on the growth control material (412), on lower sections of the side surfaces (414) and on the bottom surface (416) of the gate structure (212), wherein the lower sections of the side surfaces (414) and the bottom surface (416) of the gate structure (212) are free of the growth control material (412).

The invention relates to the technical field of epitaxial control, in particular to a multi-layer thin film growth control system and method in epitaxial equipment, and the system comprises a monitoring module, a threshold storage module, a processing module, a temperature control module and a gas control module. Growth data are obtained by detecting a plurality of detection points on epitaxial equipment, then the growth data are judged and processed based on threshold data, and if a threshold value is exceeded, a control instruction is generated according to the threshold data to control a temperature control module and a gas control module, so that growth control over multiple layers of thin films in the epitaxial equipment is achieved. Therefore, the problem that the yield of the epitaxial wafer is reduced due to the fact that a worker controls the reaction chamber through human experience when the epitaxial wafer is produced is solved.

The utility model belongs to the technical field of simulation chambers, and provides a corn growth control environment simulation chamber which comprises a simulation chamber body, a first water tank is fixedly connected to the simulation chamber body, and a first water outlet pipe is fixedly connected to the first water tank in a penetrating mode. According to the utility model, the second spray head and the first spray head are arranged, and the aperture sizes of the second spray head and the first spray head are different, so that the two groups of cultivation plates in the simulation chamber body can be irrigated on the basis of the same time, the influence of different watering on corn growth is realized, and meanwhile, the water outlet hole is formed in the bottom of the simulation chamber body; water poured by the first spray head and the second spray head can flow into the water storage tank through the water outlet holes, and the water in the water storage tank can be pumped into the first water tank and the second water tank again by starting the third water pump so as to be used for next-time irrigation, so that cyclic utilization of water resources is realized, and the water resources are saved.

The invention discloses a silicon carbide particle CVD growth control method and system based on multi-modal sensing, and relates to the technical field of intelligent manufacturing of new materials. The multi-modal data comprises a particle morphology image, process parameters and crystal form characterization data; identifying the particle morphology image to obtain a real-time particle size; the particle size deviation is calculated based on the real-time particle size, a crystal form optimization mark is calculated based on the crystal form characterization data, if the particle size deviation is larger than a preset particle size deviation threshold value or the crystal form optimization mark is true, an improved AI decision engine is triggered to make a compensation decision, and the optimal adjusting amount of the technological parameters is obtained and executed; through multi-source real-time feedback, an improved AI decision engine and multi-objective optimization, the problems of over-wide particle size distribution and high energy consumption of a traditional process are solved.

The application discloses a kind of multispectral artificial simulation sunlight artificial climate chamber, it is related to the technical field of climate chamber, including base, the base top is fixedly connected with light house, the light house top is fixedly connected with roof, the roof top is provided with sunlight simulation mechanism, it is related to the technical field of climate chamber, by setting sunlight simulation mechanism, periodically poking elastic strip in the rotating process of poking plate, make swing plate slide and reciprocating swing in the outer wall of sliding strip, to realize the multispectral light strip of fixedly connected in the bottom of swing plate drives multispectral light source to swing with wind, simulate natural light angle change, make plant light more evenly, promote its stem leaf natural growth to light, effectively improve photosynthesis efficiency, avoid local strong light burn simultaneously, realize more close to natural environment's growth control.

The application discloses an industrial large model intelligent growth control platform based on big data, relates to the technical field of industrial equipment control, and comprises a data acquisition and storage module, an industrial big data model module, an intelligent control module and a platform management module; the industrial big data model module and the intelligent control module are used for carrying out real-time information analysis on industrial data, so as to give an early warning on potential risks in a production process, give an alarm in advance, and give enterprises enough time to take measures for prevention; and the equipment control parameters are regulated and controlled; when the equipment operation controller is subjected to external interference or internal parameter change, the self-adaptive control parameters can be automatically adjusted to resist the influences, so that the stability and reliability of the system are maintained; without complicated manual parameter adjustment for different situations, the accurate prediction and control on the production process are maintained through automatic adjustment and optimization, and the user is facilitated to operate and manage.

A system (100) for the cultivation of Passiflora edulis (variety Panama Gold) with optimized fruit yield and plant architecture, consisting of: a seedling establishment unit (102) configured to monitor seed germination under controlled conditions and to evaluate seedling vigor using standardized measurements; an architecture identification unit (104) configured to assess the primary scaffold structure and identify dominant lateral shoots emerging from axillary meristems; an apical dominance management unit (106) configured to perform strategic apical pruning of the primary scaffold at predetermined heights; a lateral shoot selection unit (108) configured to establish an optimal secondary structure by selectively pruning and training tertiary shoots; a shoot hierarchy refinement unit (110) configured to optimize quaternary shoot development; and a productive growth control unit (112) configured to redirect the energy allocation of the plant from vegetative growth to reproductive development.

The invention discloses a crystal pulling growth control method which comprises the following steps: setting a zone melting voltage P and a supply speed Vp of a polycrystalline silicon rod, and performing zone melting on the polycrystalline silicon rod to form monocrystalline silicon; obtaining the monocrystalline silicon diameter d and the monocrystalline silicon cone height h of the monocrystalline silicon in each time period T; obtaining the theoretical isometric diameter d0 of the crystal according to the cone height h of the monocrystalline silicon; subtracting the diameter d of the monocrystalline silicon from the theoretical equal diameter d0 of the crystal to obtain a deviation value delta d; according to the deviation value delta d, the supply speed Vp and the zone melting voltage P are adjusted, and monocrystalline silicon growth is achieved. By adjusting the parameters in the monocrystalline silicon growth process, the monocrystalline silicon growth efficiency can be improved, and meanwhile, the crystal yield is improved.

The invention discloses a modularized combinable plant viewing and growth control system, and relates to the technical field of plant growth cultivation, firstly, environmental parameters in a closed transparent viewing container are analyzed, and a fluid loop in the container is dynamically adjusted according to the environmental parameters, so that gas circulation and microenvironment distribution are optimized; the fluorescent imaging focusing area is screened to guide the display position of the fluorescent imaging focusing area in the decorative wall or the ornamental layout. On the basis, planting plants in each focusing area are clustered, and light sources in the focusing areas are adjusted, so that targeted light environment optimization is realized; the method not only realizes multi-scale and multi-dimensional data-driven decision, but also promotes the refinement, response and individuation of plant growth regulation and control, and further ensures the stable presentation of the ornamental effect and the continuous optimization of the plant health status.

The application discloses a growth control method and device of a light emitting diode epitaxial wafer and a readable storage medium, relates to the technical field of semiconductors, and comprises the following steps: acquiring wavelength information and warping information of the epitaxial wafer output in each furnace cycle; calculating first correlation information of a graphite disc in each furnace cycle; calculating mean wavelength information of the epitaxial wafer output in each furnace cycle; calculating second correlation information of the graphite disc; calculating mean warping information of the epitaxial wafer output in each furnace cycle; calculating warping compensation temperature of the epitaxial wafer output in each furnace cycle according to preset target warping information, the mean warping information, the first correlation information and the second correlation information; calculating a wavelength difference value of the epitaxial wafer in the graphite disc according to the mean wavelength information and preset target wavelength information; calculating temperature adjustment information according to the wavelength difference value, the second correlation information, the warping compensation temperature and a preset adjustment factor; and adjusting preset temperature information of the graphite disc according to the temperature adjustment information. By adopting the application, the wavelength yield of products can be improved.

The present application provides an epitaxial control method for DFB laser chips, which relates to the technical field of wafer epitaxial growth and includes: performing reverse simulation with the constraints of meeting expected epitaxial property characteristics and a predetermined epitaxial growth cycle to determine epitaxial growth control parameters; dividing and determining multiple growth intervals, setting growth indexes for the multiple growth intervals according to the expected epitaxial property characteristics to obtain multiple expected growth indexes; and performing epitaxial growth control according to the epitaxial growth control parameters, the multiple growth intervals, and the multiple expected growth indexes. Through the present application, the technical problem in the existing method that due to the inability to quickly and accurately adjust the growth control parameters according to the growth state of the wafer epitaxial layer during the wafer epitaxial growth process, the accuracy and uniformity of epitaxial growth control are poor, affecting the growth quality of the epitaxial layer can be solved, the growth quality of the epitaxial layer can be improved, and the stability and consistency of the performance of the DFB laser chip can be ensured.

The application provides an epitaxial growth control method and device, computer equipment and a storage medium. The application uses a supercontinuum laser light source to irradiate the surface of a wafer to be measured and a reference irradiation surface to obtain a reflected light signal; the reflected light signal is synchronously scanned and filtered to output two narrow-band lights; the two narrow-band lights are converted into electrical signals and then subjected to differential operation, and the reflectivity of the wafer to be measured is calculated according to the differential result; the growth parameters of the epitaxial layer are determined based on the reflectivity, and the process parameters of the reaction cavity are adjusted according to the growth parameters to control the epitaxial growth of the wafer to be measured. The supercontinuum laser light source can scan multiple characteristic wavelengths in one process step, realizes the synchronous monitoring of multiple growth parameters, meets the monitoring requirements of complex epitaxial structures; in addition, the common-mode noise in the measurement process is eliminated in real time by using the double-beam differential measurement technology, the signal-to-noise ratio is greatly improved, the measurement accuracy is improved, and the precise control of epitaxial growth is realized.

The invention provides a growth control method and device of a single crystal silicon rod, a medium and a single crystal furnace, and the method comprises the following steps: in the growth process of the single crystal silicon rod, obtaining diameter information of the single crystal silicon rod in real time; according to the geometric parameters and the diameter information of the flow guide component, the effective gas sweeping area of the melt surface is obtained; obtaining the volume flow rate of the process gas currently supplied into the single crystal furnace; acquiring real-time surface area flux based on the volume flow and the effective gas swept area; according to the comparison result of the real-time surface area flux and the target surface area flux, the volume flow rate and / or the vertical position of the flow guiding component relative to the melt surface are / is adjusted, so that the difference between the real-time surface area flux and the target surface area flux is smaller than a set threshold value.

The invention discloses a self-growing robot based on chemical reaction driving and a growth control method thereof, and relates to the field of bionic flexible robots, and the self-growing robot comprises a driving storage mechanism, a to-be-grown part of a self-growing robot body and a control module. The driving storage mechanism comprises three chambers which are communicated in sequence, wherein the first chamber is used for storing and releasing a part to be grown; a second reactant is stored in the second chamber; the third chamber stores a first reactant. The first reactant and the second reactant are subjected to chemical reaction in the second chamber to generate gas, and the gas enters the first chamber to drive the part to be grown to turn outwards from the outlet plug to grow. And the control module controls the stepping motor to synchronously release the material. Through an integrated chemical reaction driving mode, dependence on an external air source is eliminated, mooring-free, compact and highly autonomous systems are achieved, and deployment flexibility and motion adaptability of the robot in a narrow and complex environment are remarkably improved.

The present invention provides a crystal and its growth control method, device, and equipment, relating to the fields of semiconductor and photovoltaic crystal manufacturing technology. The crystal growth control method includes: during the crystal isodiameter growth process, obtaining the actual average pulling speed for at least a portion of a preset time window, wherein the time window slides once each time a first time passes; using a second time as a processing cycle, adjusting the preset base pulling speed for the next processing cycle based on the actual average pulling speed for at least a portion of the window after each sliding of the time window in the current processing cycle, to obtain a target pulling speed for the next processing cycle, and controlling the heating power in the next processing cycle based on the target pulling speed for the next processing cycle, wherein the second time is greater than the first time. This can reduce the deviation between the target pulling speed and the actual average pulling speed, thereby reducing the probability of crystal edge breakage and improving production efficiency.

The invention discloses a molecular beam epitaxy tellurium-cadmium-mercury film growth control method based on RHEED spot intensity real-time feedback. The method comprises the following steps: selecting a specific crystal orientation reflection spot and monitoring the intensity of the specific crystal orientation reflection spot; setting growth parameters, and determining an initial growth temperature, a temperature interval and an adjustment step length based on a Hg / Te ratio; growing at the initial temperature to obtain an RHEED spot intensity initial value; after surface resetting, the temperature is adjusted according to the step length for secondary growth, and the strength is obtained and corrected; comparing the initial value with the corrected intensity, judging the temperature adjusting direction, and repeating the steps of surface resetting, growing, intensity obtaining and correcting in the correct direction. Under unknown growth conditions (any Hg / Te), multiple growth is carried out on the same substrate by using different growth temperatures after multiple surface resetting, and the optimal growth temperature is determined according to feedback of RHEED spot intensity. The method is used for guiding the preparation of the tellurium-cadmium-mercury thin film and improving the repeatability of material preparation, the controllability of process adjustment and the mobility of the process among equipment.

The utility model relates to field plant cultivation device technical field, especially the laser light supplementing device for field crop growth control. Including: power supply module, control circuit module, laser lighting module and support column, solar power generation panel, energy storage unit and laser emitter are electrically connected with control circuit module, the laser lighting module below is fixed in the support column top, solar power generation panel photoelectric conversion charges the energy storage unit, the laser lighting module includes laser emitter, free curved surface lens array, light -transmitting panel and cover body, and the light -transmitting panel sleeve is connected in the free curved surface lens array outside outside laser emitter's emission end cover, the light -transmitting panel top is sealedly connected with cover body, and the laser beam that laser emitter sent is transmitted and shaping through the free curved surface lens array, and rectangular laser light beam is shot from the light -transmitting panel. Advantages lie in: the light supplementing device improves the energy uniformity of light beam, reduces energy consumption, and the irradiation distance is far.

The invention provides a growth control method for a straight pulling single crystal equal-diameter process. The growth control method comprises the following steps: acquiring an actual pulling speed after a single crystal is subjected to equal-diameter growth for a set length; when the deviation value between the actual pulling speed and the set pulling speed is larger than the set deviation value, the heating power is adjusted so that the actual pulling speed can be matched with the adjusted pulling speed, and the adjusted pulling speed is set between the actual pulling speed and the set pulling speed; and when the deviation value of the actual pulling speed and the set pulling speed is smaller than or equal to the set deviation value, the heating power is adjusted so that the actual pulling speed can be matched with the set pulling speed. The method has the beneficial effects that the actual pulling speed is gradually and slowly adjusted according to a constant deviation value and is gradually matched with the set pulling speed in the straight pulling single crystal equal-diameter process, so that the fluctuation amplitude of the pulling speed is reduced, and the problem of single crystal bud breakage caused by overshoot temperature adjustment is effectively avoided.

A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including, as a main component, a perovskite-type oxide containing lead and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1-dOe, where M is composed of one or more metal elements capable of substituting in the perovskite-type oxide, 0<d<1, and when the electronegativity is X, 1.41X−1.05≤d≤A1·exp(−X / t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958.