Manufacture method of sputtering targets

A manufacturing method and sputtering target technology, applied in sputtering plating, ion implantation plating, vacuum evaporation plating, etc., can solve problems such as irreducibility, and achieve the effects of increasing strength, increasing density, and reducing production costs

Inactive Publication Date: 2008-07-23
SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The main technical problem to be solved by the present invention is to overcome the disadvantage that the current cost of making sputtering targets cannot be reduced while taking into account the characteristics of the target, and to provide a method for producing high-quality sputtering targets at low cost. Manufacturing method, which can increase the yield of the target material, so that the purity of the target material can be improved, the production cost can be reduced, and the target material with uniform composition can be obtained

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Put pure ruthenium (Ru) or ruthenium-based alloy (Ru-based alloy) metal powder into the mold, and after 120-180 minutes of hot pressing, the primary embryo is formed. The temperature is about 1150-1400 ° C, and the pressure is about 4000-8000 pounds per square inch (psi), the flexural strength of the embryo is 950 ± 50 million Pa (MPa), and it has no open holes, and then the embryo is subjected to 1100 ° C, 22000 pounds / square After 180 minutes of heat equalization in psi, the finished sputtering target can be obtained. At this time, the density of the target increases to 96-100%, and the flexural strength increases to 1100 ± 50 million Pa ( MPa).

Embodiment 2

[0034] Co, Cr, Pt, TiO 2 The powders of each component are put into the mold after being mixed, and the embryo is formed after 180 minutes of hot pressing. The flexural strength of the embryo is 1200±50 million Pascals (MPa), and it has no open pores, and then the embryo is subjected to a heat equalization process at 1050°C and 24,000 pounds per square inch (psi) for 150 minutes. , you can get Co-Cr-Pt-TiO 2 The finished alloy sputtering target material is finished, and at this time the density of the target material increases to 97-100%, and the flexural strength increases to 1250±50 million Pa (MPa).

Embodiment 3

[0036] Co, Cr, Pt, SiO 2 The powder of each component is mixed and put into the mold, and after 180 minutes of hot pressing, the embryo is formed. The flexural strength of the embryo is 1200±50 million Pa (MPa), and it has no open pores, and then the embryo is subjected to a heat equalization process at 950°C and 26,000 pounds per square inch (psi) for 180 minutes. , you can get Co-Cr-Pt-SiO 2 The finished alloy sputtering target material is finished, and at this time the density of the target material increases to 97-100%, and the flexural strength increases to 1250±50 million Pa (MPa).

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PUM

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Abstract

The invention provides a manufacture method of a sputtering target, which is characterized in that a target raw material powder is arranged in a die and sintered in a hot pressing type with lower temperature and lower pressure; after that, the initial blank is uniformly heated; the hot pressing type with low temperature and low pressure is adopted to lead the target blank not to have open pores; furthermore, the density of the target can be increased by more than 96% by the uniform heating type; therefore, a tank sealing process with high cost is not required, and the hot pressing preparation under low temperature and low pressure is easy to be executed; therefore, the targets with good performance can be obtained by the process with low cost.

Description

technical field [0001] The invention relates to a method for manufacturing a sputtering target. Background technique [0002] The sputtering process is widely used in the thin film process, such as electronic components, storage media, glass coating, and tool coating, etc., all of which use the sputtering process extensively. Therefore, the sputtering process has become the focus of various industries. [0003] If the quality of the film after sputtering is to be good, the sputtering target needs to have the characteristics of high purity, high density, uniform distribution of components, small grains and high mechanical strength, and the general method of making a sputtering target is roughly It can be divided into two types: melting (melting) and powder metallurgy (powder metallurgy). In the process of powder metallurgy, it can be divided into sintering (sintering) by hot pressing (HP) and hot pressing hot isostatic pressing, HIP) for sintering. [0004] When the hot pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F3/16C23C14/34
Inventor 李仲仁赵勤孝
Owner SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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