42 results about "Layer group" patented technology

The present invention relates to the field of semiconductors. Provided are a semiconductor structure and a preparation method therefor, and an electronic device, which are used for simplifying semiconductor structures and preparation methods therefor. The preparation method for the semiconductor structure comprises: forming 2n stacked material layer groups (2101) on a first substrate (100), wherein each stacked material layer group (2101) comprises a first material film layer (2111) and a second material film layer (2121); forming n first openings (10) with different depths, and among the first openings (10) from shallow to deep, forming first isolation layers (310) at ends of the first (i-1) first material film layers (2111) penetrated by the ith first opening (10); forming a second opening (20) below each first opening (10), and forming second isolation layers (320) at ends of the first (n-1) first material film layers (2111) penetrated by each second opening (20); and below each second opening (20), forming a third opening (30) extending to the first substrate (100), and forming third isolation layers (330) at ends of the first material film layers (2111) penetrated by each third opening (30).

The invention discloses a dynamic layer processing method and device based on color grouping and a storage medium, and relates to the technical field of data processing, and the method comprises the steps: carrying out the clustering analysis of layers of a to-be-processed primitive based on the color features of the to-be-processed primitive, and obtaining at least one processing layer group; according to the material type identifiers associated with the layers in the processing layer group, analyzing process rules of the layers in the processing layer group, and generating a process rule set corresponding to the processing layer group; based on the process rule set corresponding to the processing layer group, performing compensation calculation in combination with the equipment operation parameters, and generating a target processing instruction set of the processing layer group; and based on the layers in the processing layer group, combining with the target processing instruction set corresponding to the processing layer group to carry out association, and packaging to generate a processing file. The technical problem of low efficiency of dynamic layer processing is solved, and the efficiency of dynamic layer processing is improved.

The invention discloses an AR film and a preparation method thereof. The AR film comprises a surface film layer group, an AR use layer group and a bottom film layer which are sequentially laminated, the AR use layer group comprises an AR coating group, a hardened coating, a base material layer, a colorful coating and a pressure-sensitive adhesive layer which are attached in sequence; the AR coating group comprises an AF coating and a functional coating, and the functional coating comprises one or a combination of more of a silicon dioxide coating, a niobium pentoxide coating and a silicon oxide coating; according to the invention, the AR coating group and the colorful coating are reasonably arranged, and on the basis of having the anti-reflection and anti-reflection functions of a traditional AR film, the visual effect of the AR material is enhanced by utilizing the optical performance of the colorful coating and having the light arrangement polarization function, so that the overall color phenomenon looks more uniform and gorgeous, the visual feeling of consumers is improved, and the user experience is further improved. According to the preparation method provided by the invention, the AR film with good anti-reflection and anti-reflection effects and a good visual effect can be rapidly and stably prepared, and wide popularization and application are facilitated.

The invention provides an optimization method for predicting the long-term welding reliability of a wire harness terminal and a conductor, and the method comprises the steps: collecting temperature and time data in a welding process, processing the data through a thermal simulation model, and obtaining the change trend of conductor lattice arrangement; according to the change trend of conductor lattice arrangement, the initial thickness and component distribution of oxide layer formation are obtained, and microstructure features of an oxide layer group are determined; aiming at the microstructure characteristics of the oxide layer group, simulating a long-term use environment by adopting an accelerated aging test to obtain a prediction curve of resistance increase; according to the quantitative model of the aging behavior, a performance evolution rule in the actual use environment is obtained, and the incidence relation between welding parameters and long-term reliability is determined; for a process scheme for improving the stability of a conductor, the resistance change of the conductor in a high-temperature environment is simulated and verified, and the accuracy of quantitative correlation is judged.

The invention belongs to the field of mixing and mass transfer reinforcement, relates to a static mixer with a crescent notch, and aims to improve the fluid mixing performance, reduce the equipment maintenance cost and prolong the service life. The mixer is composed of a pipe body and mixing units axially arranged at intervals in the pipe body, and the mixing units are arranged in a staggered mode at the staggered angle of 0-90 degrees. The mixing unit is of a multi-layer composite structure and is formed by staggering and overlapping at least three base layer groups, and each base layer group comprises a plurality of crescent notch tubular elements which are distributed along the radial direction. A plurality of rows of crescent notches are uniformly formed in the circumferential direction of the tubular element, an included angle of 0-45 degrees is formed between the long axis of each notch and the axis of the element, and the chord length is 0.1-0.6 time of the diameter of the element. Every two notches are oppositely arranged to form an asymmetric flow guide surface, and when fluid flows through the notches, alternating hairpin vortexes are formed and a periodic expansion-contraction effect is generated, so that the chaotic mixing characteristic is enhanced. The multi-layer notch array structure can reduce damage caused by fluid impact, and the service life of equipment is prolonged.

The invention belongs to the technical field of impact protection and energy absorption, and particularly relates to a double-platform energy-absorbing buffer material with a negative Poisson's ratio characteristic, which comprises a top layer, an energy-absorbing layer group and a bottom layer which are fixedly arranged in sequence, the energy absorption layer set is composed of a plurality of stacked energy absorption layers, and each energy absorption layer comprises a plurality of energy absorption units arranged in a rectangular array. Each energy absorption unit comprises two orthogonally-arranged energy absorption unit cell structures, each energy absorption unit cell structure forms a first energy absorption cavity through a connecting face and a first inwards-concave structure, and a transverse rod and a second inwards-concave structure are arranged on the outer side of each first inwards-concave structure to form a second energy absorption cavity. The adjacent energy absorption units in the layers are connected through transverse rods, and the energy absorption layers are fixed through connecting faces. By means of various step-by-step buckling deformations of the two-stage concave structure, the first stress platform and the second stress platform which are independently adjustable are sequentially generated in the compression process, and efficient two-stage energy absorption is achieved; the three-dimensional structure has the negative Poisson's ratio effect and multidirectional bearing capacity, and can effectively avoid transverse expansion due to compression.

An encoder includes circuitry and memory coupled to the circuitry. In operation, the circuitry determines whether a determined relationship between a total number of one or more layer groups and a total number of one or more parameters is satisfied. The one or more layer groups each include at least one output layer, and the one or more parameters each indicate a performance requirement for a decoder. When the determined relationship is satisfied, the circuitry determines, using a determined method, a correspondence relationship for associating any of the one or more parameters with each of the one or more layer groups, and omits storing information indicating the correspondence relationship in a common header shared between layers in the one or more layer groups.

A waveguide assembly for exciting / deflecting the partial light beams of at least one light beam pair, comprises a layer stack made of a plurality of layers stacked in a stacking direction, the layer stack comprising: two transparent dielectric cover layers, each including at least one transparent cover layer; a resonator stack having a predetermined number of layers between the two cover layer stacks, wherein at least one layer group including some successive layers in the stacking direction of all the layers of the resonator stack forms a resonator that includes at least one light-deflecting structure; at least one switching assembly, by way of which a phase change of at least one of two partial light beams of a light beam pair which can be guided between the outer boundaries of the cover layer stacks can be locally caused at least intermittently, which can be propagated without self-interference in the two cover layer stacks and with self-interference in the at least one resonator.

The invention discloses a high-temperature-resistant lens structure, which comprises a substrate, a substrate body and a hardened layer, and the hardened layer is coated on the substrate body; the at least one thin film layer group covers one side of the substrate, the thin film layer group comprises at least two first refractive index thin film layers and at least one second refractive index thin film layer, the refractive index of the first refractive index thin film layer is lower than that of the second refractive index thin film layer, and the refractive index of the second refractive index thin film layer is lower than that of the first refractive index thin film layer. The first refractive index thin film layer, the second refractive index thin film layer and the first refractive index thin film layer are sequentially arranged on the substrate, so that at least one of the first refractive index thin film layers contains 5wt%-15wt% of Ta2O5 and 85wt%-95wt% of SiO2; the waterproof coating is coated on the thin film layer group; therefore, the difference of expansion coefficients of the first refractive index thin film layer and the second refractive index thin film layer to temperature can be reduced, so that the thin film layers are not easy to separate and have the capability of resisting large temperature change when the temperature changes violently, such as temperature rise.

A structure of an infrared thermopile sensor chip and a manufacturing method therefor. The manufacturing method comprises the following steps: a, providing a substrate layer (100), the substrate layer (100) having an upper surface (110) and a lower surface (120); b, depositing a dielectric-dipole layer group (200) on the upper surface (110) of the substrate layer (100), wherein the steps of depositing the dielectric-dipole layer group (200) comprise: b1, depositing a first dielectric (211b) on the upper surface (110) of the substrate layer (100), and patterning the first dielectric (211b) to obtain a first dielectric layer (211) having a plurality of dielectric holes (420), the dielectric holes (420) being communicated with an upper surface of the first dielectric layer (211) and the substrate layer (100); and b2, depositing a first dipole layer (221) on the upper surface of the first dielectric layer (211), the first dipole layer (221) filling the dielectric holes (420); and e, from the lower surface (120) of the substrate layer (100), etching the substrate layer (100) and the first dipole layer (221) in the dielectric holes (420), so as to manufacture an infrared thermopile sensor chip having a back cavity (400), thereby improving heat dissipation capability, and increasing thermopile signal quantity.

The invention provides an LDPC (Low Density Parity Check) decoding method and device, equipment and a storage medium. The method comprises the following steps: dividing a check matrix into multiple layers according to rows; combining the plurality of layers to obtain a plurality of layer groups; wherein each layer group is numbered in sequence; and based on each layer group, decoding according to an inverted sequence. According to the method provided by the invention, after the rows are layered, the layers are grouped, and decoding is carried out according to an inverted sequence based on each layer group, so that processing time delay caused by layer jump can be avoided, and implementation of parallel pipeline is facilitated.

A semiconductor structure (1) comprises: a substrate (2); a base layer (10) comprising an AlGaN layer, the base layer (10) being arranged above the substrate (2); at least one layer group (20), the at least one layer group (20) being arranged above the base layer (10), where each of the at least one layer group (20) comprises: a first layer (21) being a layer of InGaN and comprising quantum dots (24); the invention relates to a semiconductor device comprising a first layer (21) of quantum dots (24), a second layer (22) of InGaN, the second layer (22) being a layer of InGaN, the second layer (22) being arranged on and above the first layer (21), the second layer (22) laterally surrounding the quantum dots (24) of the first layer (21), the material composition of the InGaN of the second layer (22) being different from the material composition of the InGaN of the first layer (21).

The invention discloses an antiferromagnetic metal single crystal with a three-dimensional stacking ordered structure and a preparation method of the antiferromagnetic metal single crystal. The preparation method comprises the following steps: uniformly mixing Fe powder, Co powder, Ge powder and Te powder, and then loading the mixture into a quartz tube together with a transport agent; putting the sealed quartz tube into a double-temperature-zone tubular furnace for calcining to obtain the antiferromagnetic metal single crystal; a unit cell of the antiferromagnetic metal single crystal is formed by stacking a plurality of layer structures layer by layer, and each layer structure is provided with two Te layers, a Ge layer and a Fe / Co layer, wherein the Ge layer and the Fe / Co layer are respectively positioned between the two Te layers; the plurality of layer structures are grouped in pairs to form a plurality of layer groups which are sequentially stacked, the two layer structures in the same layer group are in an AA stacking mode, and the two layer structures in the two adjacent layer groups are in an ordered staggered stacking mode. The antiferromagnetic metal single crystal has the characteristics of good cruising antiferromagnetism, neel temperature higher than room temperature, three-dimensional stacking ordered structure and the like, and promotes the development of related fields.

The application provides a product defect intelligent detection method and system based on small sample learning, comprising the following steps: acquiring a defect picture; calling a DINO algorithm to process the defect picture to obtain a first processing layer; calling a Swin Transformer algorithm to process the defect picture to obtain a plurality of down-sampling layers; replacing one layer in the plurality of down-sampling layers with the first processing layer to form a candidate layer group; selecting a plurality of layers including the first processing layer from the candidate layer group to form a to-be-processed layer group; and outputting the to-be-processed layer group to a small sample target detection learner for processing and detection. The application can effectively combine the advantages of the DINO algorithm and the Swin Transformer algorithm, and take into account the fine granularity and semantic information of image processing.

The invention provides a self-adaptive ultrasonic detection and defect identification method for a composite material, and belongs to the technical field of ultrasonic detection.The self-adaptive ultrasonic detection and defect identification method for the composite material comprises the specific steps that firstly, preparation is conducted before detection; 2, collecting full-matrix data of the one-way plate; 3, calculating a core elastic constant of the composite board; 4, deducing the velocity distribution of each layer group of the composite board; 5, collecting full-matrix data of the composite board; step 6, adaptively correcting imaging delay; and 7, performing full-focusing imaging and judgment on the defects of the composite board. According to the method, defect subtle features which are difficult to recognize by human eyes in the full-focus imaging picture can be automatically mined through the deep learning model, the problems of missing detection and false detection caused by subjective judgment deviation are effectively avoided, rapid and accurate classification and positioning of various defects can be realized through the deep learning model, the detection period is greatly shortened, and the detection efficiency is improved. And reliable technical support is provided for high efficiency and precision of ultrasonic detection of the composite material.

A sliding member may include a metallic base, at least one intermediate bonding layer disposed on the metallic base, and a multilayer protective coating disposed on the intermediate bonding layer. The at least one intermediate bonding layer may be composed of at least one metal. The multilayer protective coating may include a plurality of CrAlN layers and a plurality of Cr(Al)N layers arranged in an alternating manner. The multilayer protective coating may include a plurality of periodicity layer groups, each of which may be defined by a CrAlN layer and an adjacent Cr(Al)N layer. The plurality of CrAlN layers may have a higher Al content than the plurality of Cr(Al)N layers. A thickness ratio of the CrAlN layer to the Cr(Al)N layer in each periodicity layer group may be from 1 to 10. The multilayer protective coating may have a total Al content of 15 to 40 atom-%.

Provided are: a hard coating that has a novel structure and has excellent wear resistance and deposition resistance with respect to a wide range of work materials; and a hard coating–coated tool.　A hard coating according to the present invention is formed by layering a first layer group 34 and an alternating nanolayer layer 36 that is a second layer group. The alternating nanolayer layer 36 is an alternating stack of at least three layers from among a nanolayer A layer 36a, a nanolayer B layer 36b, a nanolayer C layer 36c, and a nanolayer D layer 36d. The relationship between the hardness and the toughness of the coating can be optimized and the durability of the coating improved by varying the growth of particles at each layer by selecting the compositional ratio and additional elements of each layer to control crystal size and the relationship between crystal orientation (200) and orientation (111).

The utility model provides a shell and electronic equipment. The housing includes: a transparent substrate; the transparent texture layer group comprises a texture layer and a first substrate layer which are arranged in a laminated manner; the first transparent adhesive layer, the first substrate layer and the transparent substrate are laminated through the first transparent adhesive layer, and the first substrate layer is arranged between the texture layer and the transparent substrate. According to the texture shell, richer and diversified visual perception can be provided, and the application range of the texture shell is wider.

The invention relates to an array substrate, a display panel and a display device. The array substrate comprises a substrate; the driving layer group is located on one side of the substrate, the driving layer group comprises at least two metal layers, the at least two metal layers comprise a first metal layer and a second metal layer which are arranged in an insulating mode, and the second metal layer is located on the side, close to or away from the substrate, of the first metal layer; at least part of the first metal layer comprises a first sub-metal layer and a second sub-metal layer which are stacked, the first sub-metal layer is located between the substrate and the second sub-metal layer, and the orthographic projection of the second sub-metal layer on the substrate and the orthographic projection of the first sub-metal layer on the substrate are at least partially overlapped. According to the array substrate adopting the technical scheme, when the screen body of the display panel is impacted, at least part of the first metal layer is of a double-layer film design, so that fracture extension of the film layer can be blocked, the fracture influence of the film layer can be reduced, the impact resistance is improved, the functionality of the film layer is ensured, and wide application is facilitated.

The invention discloses a laser engraving machine, and belongs to the technical field of laser processing. The device mainly comprises a carrying table and an unfolding device, the unfolding device comprises a shaping structure arranged on a film, the shaping structure comprises a shaping layer set, an outer cover film and a hose, the shaping layer set comprises a plurality of hexagonal pieces, a plurality of inserting needles and a plurality of wafers, the hexagonal pieces are attached to the surface of the film, and the inserting needles are inserted into the hexagonal pieces. The side edge of each hexagonal sheet and the side edge of the adjacent hexagonal sheet are arranged in parallel and at intervals, so that side seams are arranged between the adjacent hexagonal sheets at intervals, the contact pins protrude out of the faces, deviating from the film sheet, of the hexagonal sheets, the wafers are stacked on the faces, deviating from the film sheet, of the hexagonal sheets, and every three contact pins are arranged on the peripheral sides of the wafers at equal intervals in an attached mode around the axes of the wafers. The outer cover film covers the surface of the film, a variable volume cavity is defined by the outer cover film and the film, the shaping layer group is accommodated in the variable volume cavity, and the hose is communicated with the variable volume cavity. According to the laser engraving machine, the film can be quickly laid and unfolded.

A semiconductor structure and a preparation method therefor. The semiconductor structure comprises: a substrate; a patterned stack structure located on the substrate and comprising first dielectric layers and first conductive layers that are alternately stacked; and a step structure located on the substrate and comprising a plurality of stacked step layer groups, wherein the plurality of step layer groups form a plurality of steps distributed in a second direction, and each step layer group comprises a second dielectric layer, a second conductive layer and a third dielectric layer; in the same step layer group, the third dielectric layer and the second conductive layer are arranged in the second direction, and the orthographic projections of the two on the substrate overlap with the orthographic projection of the second dielectric layer on the substrate; and the orthographic projections of a plurality of second conductive layers of the plurality of step layer groups on the substrate have the same area.

The application provides a gallium nitride high-power device multilayer structure growth control method and system, relates to the technical field of semiconductors, and comprises sequentially epitaxially growing a nucleation layer, a transition layer and a gradient stress buffer layer group on a substrate, controlling the difference value of the lattice mismatch degree of the gallium aluminum nitride layer in the buffer layer to decrease by synchronously regulating the growth temperature and the trimethyl gallium flow, and dynamically determining the thickness of a gallium nitride insertion layer based on the accumulated elastic strain energy to release the strain. Then, a stress modulation layer composed of a gallium aluminum nitride superlattice with the aluminum component periodically fluctuating is grown, the periodic stress field of the stress modulation layer is used to block the upward extension of dislocation defects, and finally, a channel layer and a barrier layer are grown. The method can effectively reduce the defect density of the epitaxial layer and improve the performance and reliability of the gallium nitride high-power device.

The invention relates to a high-hardness HUD free-form surface mirror and a magnetron sputtering coating preparation method thereof, a plastic free-form surface mirror is sequentially provided with a combined film layer and a superhard optical thin film layer group, and the superhard optical thin film layer group comprises an Al film layer, a first SiO2 film layer, an Nb2O5 film layer and a second SiO2 film layer which are sequentially arranged on the combined film layer. The method comprises the following steps: putting a high polymer material HUD free-form surface mirror into a vacuum multi-cavity magnetic control coating machine, and introducing inert gas; the first layer is plated with a third SiO2 film layer by adopting a CVD (Chemical Vapor Deposition) method and is combined with the high polymer material HUD free-form surface mirror to form the third SiO2 film layer; and plating the superhard optical thin film layer group by using a PVD (Physical Vapor Deposition) method, and sequentially forming an Al film layer, a first SiO2 film layer, an Nb2O5 film layer and a second SiO2 film layer on the third SiO2 film layer. By optimizing the film system design and the preparation process, the HUD free-form surface mirror achieves high hardness and meets the requirement for high-temperature storage.

The invention discloses a paving layer conversion method of a composite material beam. The method comprises the following steps: S1, paving material sheets of a first paving layer group (1) on a lower die (5), and vacuumizing and compacting at normal temperature; s2, the material sheets of the second laying layer group (2) are sequentially laid on the first laying layer group (1) which is subjected to normal-temperature vacuum pumping and compaction, and normal-temperature vacuum pumping and compaction are carried out; during laying, the material sheets of the second laying layer group (2) and the edge strip areas between the first layer of material sheets of the second laying layer group (2) and the first laying layer group (1) are isolated by isolating membranes or backs of the material sheets; s3, after the second laying layer group (2) is laid and compacted, the upper mold (6) and the lower mold (5) are closed; s4, after the mold is closed, separating films or back liners of edge strip areas of all the material pieces of the second laying layer set (2) are pulled away, then the edge strip areas are sequentially wrapped back to the upper mold (6), and normal-temperature vacuumizing compaction is carried out; s5, the corners of the first laying layer set and the second laying layer set are filled with rhodomyrtus tomentosa strips (9); after filling is finished, the third laying layer set (3) and the fourth laying layer set (4) on the side mold body A (7) and the side mold body B (8) continue to be laid, and normal-temperature vacuumizing compaction is conducted; then the two side molds are closed; and S6, after the two side molds are assembled, vacuum curing is carried out. According to the invention, wrinkles of the cloth layer between the first layer group and the second layer group in the L-shaped flanging area of the web can be effectively controlled.

The invention relates to the technical field of metamaterials, and discloses a layered metamaterial with double negative refractive indexes, which comprises a substrate and a periodic layer group, and the periodic layer group comprises metal layers and dielectric layers which are alternately stacked on the substrate. The preparation method of the layered metamaterial with the double negative refractive indexes comprises the steps that S5, annealing treatment is conducted on the formed substrate and the periodic layer set, the annealing temperature is 300-600 DEG C, the annealing time is 1-5 h, and the layered metamaterial with the double negative refractive indexes is obtained. According to the layered metamaterial with the double negative refractive indexes and the preparation method of the layered metamaterial, the metal layer and the dielectric layer form a tightly combined interface, the interface roughness is small, interlayer defects are reduced, meanwhile, through annealing treatment, interface atoms are promoted to be rearranged, the defect density is reduced, and interlayer binding force is enhanced; the problems that the metal layer and the dielectric layer are low in interface bonding strength and easy to peel off or oxidize are solved, and electromagnetic performance attenuation caused by structural damage is reduced.

The utility model discloses an AR (augmented reality) film which comprises a surface film layer group, an AR using layer group and a bottom film layer which are attached in sequence, the AR use layer group comprises an AR coating group, a hardened coating, a base material layer, a colorful coating and a pressure-sensitive adhesive layer which are attached in sequence; the AR coating group comprises an AF coating and a functional coating, and the functional coating comprises one or a combination of more of a silicon dioxide coating, a niobium pentoxide coating and a silicon oxide coating; according to the utility model, the AR coating group and the colorful coating are reasonably arranged, and on the basis of having the anti-reflection and anti-reflection functions of a traditional AR film, the visual effect of the AR material is enhanced by utilizing the optical performance of the colorful coating and having the light arrangement polarization function, so that the overall color phenomenon looks more uniform and gorgeous, and the visual feeling of consumers is improved; and the user experience is improved. According to the preparation method provided by the utility model, the AR film with good anti-reflection and anti-reflection effects and good visual effect can be rapidly and stably prepared, and wide popularization and application are facilitated.

The utility model relates to a cover plate with a composite coating structure, which comprises a glass substrate serving as a support foundation of an integral structure; the coating layer group is arranged on the front surface of the glass substrate and sequentially comprises a Cu-Zr alloy layer, a Cu-Cr-Zr alloy layer and a copper-nickel alloy layer from inside to outside; the ink layer is arranged in a frame area on the back of the glass substrate, and the copper-silver alloy layer is located below the ink layer. And the total thickness of each layer of the coating layer group and the copper-silver alloy layer does not exceed 200nm. According to the technical scheme, the hardness and wear resistance of the glass surface are improved; the hardness and the corrosion resistance are further enhanced through the Cu-Cr-Zr alloy layer; and the copper-nickel alloy layer is used as the outermost layer, so that external scratch and corrosion are effectively resisted, and the inner-layer coating film is protected. Meanwhile, due to the application of the photochromic ink layer, the cover plate can show rich color changes according to the change of light or temperature, and the interestingness and attractiveness of the product are improved.

The invention belongs to the technical field of additive manufacturing, and relates to a point-surface combined laser additive manufacturing method and system.The method comprises the steps that a virtual model file of a to-be-printed part is established, the virtual model file is sliced, and slicing layers are obtained; marking the slice layers according to the structural features of the slice layers to obtain marked slice layers; the marked slice layers are divided into a tape laying layer group, a silk laying layer group and a silk tape combination layer group; a laser additive manufacturing path is planned based on the tape laying layer set, the silk laying layer set and the silk tape combination layer set; and on the basis of the marked slice layer and the laser additive manufacturing path, a point-surface combination integrated additive manufacturing task of the continuous fiber reinforced resin composite material is planned, and laser additive manufacturing is conducted according to the point-surface combination integrated additive manufacturing task. According to the invention, the effects of greatly improving the manufacturing efficiency and reducing the comprehensive cost on the whole can be realized.

The present disclosure relates to an information processing apparatus and method capable of suppressing an increase in load of reproduction processing.The metadata including the spatial configuration information of the subgroup and the dependency information of the subgroup and the layer-group is generated on the basis of the bitstream of the geometry of the 3D data, and the file storing the bitstream and the metadata are generated. Further, on the basis of the spatial configuration information of the subgroup and the dependency information of the subgroup and the layer-group stored in the file as metadata, a bitstream of the geometry of the 3D data corresponding to the desired layer-group and the subgroup stored in the file is extracted, and the extracted bitstream is decoded. The present disclosure can be applied to, for example, an information processing apparatus, an information processing method, or the like.

The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The semiconductor structure comprises a substrate, a patterned stack structure on the substrate, the patterned stack structure comprising first dielectric layers and first conductive layers stacked alternately, the first conductive layers comprising a wire connection portion and first conductive wires connected to the wire connection portion in a first direction, and a step structure on the substrate, the step structure comprising a plurality of step layer groups stacked, the plurality of step layer groups forming a plurality of steps distributed along a second direction, and each step layer group comprising a second dielectric layer, a second conductive layer connected to the wire connection portion in the first direction, and a third dielectric layer, in the same step layer group, the third dielectric layer and the second conductive layer are arranged along the second direction, and the orthographic projection of the third dielectric layer and the second conductive layer on the substrate overlaps the orthographic projection of the second dielectric layer on the substrate, and the orthographic projection areas of the plurality of second conductive layers of the plurality of step layer groups on the substrate are the same. The embodiments of the present disclosure improve the RC delay between the conductive wires of each layer.