116 results about "Thermopile" patented technology

The invention relates to the technical field of infrared sensors, in particular to a monolithic integrated MEMS out-of-plane thermopile chip and a preparation method thereof, and the thermopile chip comprises a substrate, and a bottom electrode, a thermocouple array, a top electrode and an optical radiation absorption layer which are sequentially arranged on the substrate; the thermocouple array is vertically arranged on the bottom electrode; the thermocouple array comprises a plurality of thermocouple pairs, and each thermocouple pair comprises an N-type thermocouple and a P-type thermocouple; the N-type thermocouple and the P-type thermocouple form a current and heat flow loop in an electric series connection and heat parallel connection mode. According to the invention, the bismuth telluride-based thermoelectric material with low thermal conductivity and high Seebeck coefficient difference is used as the thermocouple material of the out-of-plane thermopile chip, the heat conduction path of the out-of-plane thermopile chip is more direct, the temperature difference in the vertical direction can be directly utilized, and the higher response speed and high sensitivity are expected to be realized due to the more efficient thermal gradient.

The invention discloses a chromium-doped indium oxide-based high-temperature heat flux sensor and a preparation method thereof, a screen printing technology is adopted, a slurry formula and printing process parameters are optimized, a thermopile structure is accurately formed on a high-temperature-resistant ceramic substrate, and then a thermopile and a thermal resistance layer are subjected to step-by-step high-temperature sintering treatment, so that the chromium-doped indium oxide-based high-temperature heat flux sensor is obtained. And firm combination between the thin film and the substrate and densification of a microstructure are ensured. The finally prepared sensor has excellent high-temperature oxidation resistance and long-term working stability, is stable and reliable in thermoelectric output signal, meets the strict requirements of aerospace, energy power and other fields on high-temperature heat flow measurement, is suitable for heat flow monitoring in high-temperature combustion environments, high-speed pneumatic heating and other scenes, and has wide application prospects. And a reliable test means is provided for design and performance evaluation of the thermal protection system in an extreme environment.

The invention discloses a high-power thin film thermopile laser power meter and a preparation method thereof, and relates to the technical field of laser detection equipment. The high-power thin-film thermopile laser power meter comprises a thermopile chip and a heat sink packaging shell, the thermopile chip comprises a substrate, a thermopile layer is arranged on the substrate, the thermopile layer comprises a plurality of thermocouple lines, the adjacent thermocouple lines are connected in series, the thermocouple lines are distributed in a square shape, the thermocouple lines are distributed in a step shape, and the thermopile chip is connected with the heat sink packaging shell. And a cold end thermal resistance layer and a hot end thermal resistance layer are respectively arranged above the cold end and below the hot end of the thermopile layer. The structure of the thermopile is optimized, the heat transfer path in the thermopile chip is regulated and controlled, the stability of the thermopile chip in a low laser power test is improved, the preparation process is improved, and the cost is reduced. The problems that an existing thin film thermopile laser power meter is low in sensitivity and poor in stability during low-power measurement, and a thermopile chip is prone to aging and poor in stability during high-power density measurement are effectively solved.

The application provides a MEMS differential thermal analysis sensor and a DTA / DSC testing method, the sensor comprising a detection thermocouple, a reference thermocouple, an ambient resistance and a shielding ring, wherein the detection thermocouple and the reference thermocouple each comprise a single crystal silicon substrate, a heat insulation cavity, a plurality of single crystal silicon thermocouple pairs and a supporting film, the heat insulation cavity is located in the single crystal silicon substrate, the plurality of single crystal silicon thermocouple pairs are connected in series and are supported by the supporting film to be suspended above the heat insulation cavity to achieve thermal isolation, and the single crystal silicon thermocouple pair comprises an N-type single crystal silicon thermocouple and a P-type single crystal silicon thermocouple connected in series, the temperature and power sensitivity of the sensor are significantly improved, reach 28 mV / K and 100 V / W, and the noise equivalent temperature difference and the noise equivalent power reach 0.5 mK or 0.2 muW. Based on the output signal of the sensor, differential thermal analysis testing and differential scanning calorimetry testing on physical or chemical processes of material heat absorption and release can be realized, the sample consumption is small, and the testing precision is high.

The present application relates to a kind of ion polymer-based thermoelectric pile heat flux sensor device, the thermoelectric pile heat flux sensor includes in turn: first protective layer, first connecting circuit, thermal resistance layer, thermoelectric element, second connecting circuit and second protective layer, wherein the thermoelectric element is embedded in the thermal resistance layer and is made of ion conductor with free ion as main carrier. Since ion conductor has huge thermoelectric potential, only a few pairs of ion thermoelectric column need to be integrated to obtain the required thermoelectric voltage with the required sensitivity.

Wearable devices capable of measuring a core body temperature and other vital signs of a user in a range of situations are described herein. The wearable device is arranged to be retained within the ear canal of the ear, in order to prevent the wearable device from inadvertently removing itself from the ear. Providing an infrared thermopile at the innermost end of the ear insert ensures that the infrared thermopile is provided as close as possible to the tympanic membrane which will be used to provide an indication of the core body temperature.

The application discloses a kind of thermoelectric array and depth camera joint calibration method and system.The application can be simultaneously detected by thermoelectric array and depth camera with spherical calibration object, and the spherical center of the spherical calibration object is used as feature point;The spherical calibration object is set to the position so that the temperature field observed by the thermoelectric array has central symmetry;Change the space pose of the spherical calibration object and synchronously collect the first coordinate set of the spherical center in the thermoelectric array coordinate system and the second coordinate set in the depth camera coordinate system;Based on the first coordinate set and the second coordinate set, the spatial transformation relationship between the thermoelectric array and the depth camera is solved.By the application, the thermoelectric array image coordinates are not dependent on detection, but rely on aiming at a specific location, and use temperature measurement symmetry, aiming accuracy is much higher than detection, so high-precision thermoelectric array image coordinates are obtained.

The present application discloses an improved thermopile laser sensor apparatus and methods of use. In one embodiment, the apparatus includes a sensor body having a first sensor body recess and a second sensor body recess formed therein, with a substrate positioned in the first sensor body recess in thermal communication with the sensor body. The substrate includes at least one absorber attached thereto and configured to absorb a portion of a beam of laser energy. A first thermal sensor in thermal communication with the substrate and the sensor body may be formed on or attached to the substrate. A second thermal sensor in thermal communication with the sensor body may be positioned in the second sensor body recess. A thermal barrier configured to reduce the rate of transfer of thermal energy from the substrate to the second thermal sensor may be positioned between the substrate and the second thermal sensor.

The application discloses a blackbody-thermoelectric pile cooperative thermistor multi-temperature-point zero-point matching calibration method. The method utilizes the Seebeck effect of the thermoelectric pile, establishes the accurate corresponding relationship of the blackbody standard temperature-thermistor resistance value through zero-point matching, carries out dynamic temperature scanning on different calibration point temperatures of the cavity, and obtains the thermistor parameters of multiple temperature points. Finally, the accurate R-T curve is fitted through the least square method. The method innovatively calibrates the thermistor through the blackbody heat radiation mode. The method does not need to disassemble the instrument, does not damage the stability of the original system, can complete the rapid calibration of the instrument on site, effectively reduces the calibration cost, and guarantees the temperature calibration accuracy and the calibration effect.

The application discloses a thermoelectric pile structure for calibrating a far ultraviolet ultraviolet detector based on MEMS, which comprises a silicon substrate, a support layer, an absorption layer, a thermocouple pair, aluminum wires, aluminum electrodes and a single crystal silicon material structure on the silicon substrate. The double-layer thermocouple stacking structure is adopted to improve the device duty ratio, more thermocouple pairs can be laid in the case of keeping the size of the one-layer structure unchanged, and the response rate of the detector is improved. The circular structure conforms to the distribution trend that the temperature is radially diffused from the center of the absorption layer to the periphery in a decreasing manner, the hot end of the thermocouple pair can be closer to the area with higher temperature, the temperature of the hot end of the thermocouple pair is more uniform, and the response rate of the detector is improved. The radiant energy of the far ultraviolet ultraviolet radiation source is converted into an output thermoelectric electromotive force, a mathematical model of Fourier's law and the Seebeck effect is established for calculation, and the heat flux density of the far ultraviolet ultraviolet radiation source is measured.

This invention relates to a miniature sensor for engine ignition monitoring based on a thermopile infrared sensor. It includes: a housing, a thermopile infrared detector, and a power module, a main control unit, and a communication unit disposed within the housing. The main control unit is an FPGA chip containing an ARM processor and a SOC core. The power module is connected to the thermopile infrared detector, the main control unit, and the communication unit, respectively, to provide voltages for the corresponding parameters of each device. The communication unit is connected to the main control unit to send monitoring commands and the target area for engine ignition monitoring. The infrared detector is connected to the main control unit, and the main control unit controls the infrared detector to monitor the ignition plume within the target area based on the monitoring commands to obtain raw measurement data. The main control unit is also used to calculate the raw measurement data and determine the engine ignition state based on the calculation results. The miniature sensor designed in this application is lightweight, small in size, and can quickly monitor the engine ignition state.

The invention relates to a high-sensitivity MEMS flow sensor and a manufacturing method thereof.The high-sensitivity MEMS flow sensor comprises a sensor chip, a metal base and a measuring runner, the sensor chip comprises a substrate, and a porous silicon area is formed in the substrate; the first dielectric layer is formed on the substrate and the upper surface of the porous silicon region; the heating resistor array is formed on the upper surface of the first dielectric layer and is positioned right above the porous silicon region; the thermopile array is formed on the upper surface of the first dielectric layer and located over the porous silicon area, and the thermopile array and the heating resistor array are alternately arranged in the direction of the gas flow channel; the electric isolation layer covers the heating resistor array and the thermopile array; the metal interconnection structure is formed on the upper surface of the electric isolation layer and is connected with the thermopile array; the electrode is connected with the metal interconnection structure; and the second dielectric layer covers the electrical isolation layer and the metal interconnection structure. A multi-pair symmetrical distribution structure in which the thermopiles and the heaters are alternately arranged is adopted, so that the measurement sensitivity of the flowmeter is remarkably improved.

A temperature sensing system includes absolute temperature sensor(s) and / or thermopiles that form concentric geometries and are uniform in height. In some examples, the temperature sensing system can determine internal body temperature and / or ambient temperature based at least on a thermal gradient associated with the inner thermopile, a thermal gradient associated with the outer thermopile, a lateral temperature difference between the inner and the outer thermopiles, and an absolute temperature. In some examples, the temperature sensing system can determine the internal body temperature and / or ambient temperature using at least four absolute temperature sensors forming a concentric structure.

The application discloses an infrared thermoelectric detector and a manufacturing method thereof, and belongs to the technical field of temperature sensing. The infrared thermoelectric detector comprises a substrate, a first thermocouple layer, a sacrifice layer and a second thermocouple layer are sequentially arranged on the substrate, and a vacuum heat insulation cavity is arranged in the sacrifice layer. The manufacturing method of the infrared thermoelectric detector comprises the following steps: preparing the vacuum heat insulation cavity in the sacrifice layer; etching the sacrifice layer to form a plurality of standby groove structures and a plurality of micropore arrays, the micropore array is a plurality of holes arranged on the top surface or the bottom surface of each standby groove structure, and the micropore array and the standby groove structure form a communication structure; and in a vacuum environment, a filling layer is deposited in the sacrifice layer, the communication structure is not completely filled, and at least one vacuum cavity is formed. Through the infrared thermoelectric detector with the vacuum heat insulation cavity, the response rate and the detection rate of the thermoelectric detector are effectively improved, and the resolution and the sensitivity of the detection result in the laser power measurement application are improved.

The application discloses a thermal type wind speed and direction sensor based on thermistors and thermoelectric piles and a working method thereof. The sensor structure comprises a thermistor, a thermoelectric pile, a heating resistor, a silicon substrate and a measurement and control IC. The heating resistor is square and located at the center of the substrate. Four thermistors and a thermoelectric pile parallel to the side edges of the heating resistor are distributed on the four sides of the heating resistor. The four parallel thermistors are connected to form a Wheatstone full-bridge temperature measurement structure, and the two parallel thermoelectric piles are connected to form a thermoelectric pile temperature measurement structure. The measurement and control IC is distributed at the four corners of the substrate and connected to the temperature measurement structure formed by the heating resistor, the thermoelectric pile and the thermistor, and is used for driving the detection structure and processing the output signal thereof. The application adopts a CMOS process, and the thermistor and the thermoelectric pile structure are redundant to each other, so that the wind speed and direction detection precision can be improved.

The disclosure provides a temperature sensing device including a thermopile sensing assembly with a metal sleeve and a metal grid for blocking microwave from entering the thermopile sensor and influencing temperature detection. The temperature sensing device includes one or more than one thermopile sensing elements, an ambient temperature sensor, a signal processing chip, and an infrared lens providing narrow FOV. When dual thermopile sensing elements are used, one is active unit with narrow FOV for measuring the infrared radiation of the object to be detected, and the other one is a dummy unit for the compensation of the thermal shock to achieve the purpose of accurate temperature detection. The disclosure also provides the visible light source to indicate the sensing area of the thermopile sensor, that may facilitate the user positioning the object to be heated. FOV of the light source is the same with that of the thermopile sensor.

The embodiment of the application discloses an alcohol gas concentration sensor which comprises a reflecting tube, a light source assembly and a detection assembly. When in use, alcohol gas exhaled in a vehicle enters the tube through a long air inlet hole of the reflecting tube, and the light source assembly emits light. The light repeatedly reflects on the inner wall of the metal reflecting tube to prolong the light path, and fully contacts the alcohol gas in the reflecting tube. The alcohol absorbs specific band infrared light. The remaining light reaches another end thermocouple sensor. The thermocouple sensor distinguishes the target infrared band, converts the light intensity change into an electric signal, and the control circuit board collects the electric signal and performs calculation and conversion, and finally outputs the real-time alcohol gas concentration value.

This utility model provides a fault location device for low-voltage engineering, relating to the field of low-voltage engineering technology. It includes a main body for the fault location device, with an annular base at the top and three sensor groups mounted on the annular base. A telescopic rod is located at the bottom of the main body, and a folding arm is hinged to one side of the main body. The device employs a three-layer stacked design of a high-frequency electromagnetic induction coil, an infrared thermopile, and a Hall effect sensor, combined with a triangulation algorithm, to improve fault location accuracy to ±2%, far exceeding the ±8% to 10% accuracy of traditional equipment. Furthermore, the annular base is driven by a stepper motor and, in conjunction with a magnetic encoder, achieves 360° high-precision rotation scanning, avoiding errors caused by manual movement, making it particularly suitable for detecting narrow or concealed wiring.

An infrared thermopile sensor includes a silicon cover having an infrared lens, an infrared sensing chip having duo-thermopile sensing elements, and a microcontroller chip calculating a temperature of an object. The components are in a stacked 3D package to decrease the size of the infrared thermopile sensor. The infrared sensing chip and the microcontroller chip have metal layers to shield the thermal radiation. The conversion from wrist temperature to body core temperature uses estimated air temperature based on inside temperature, wrist temperature from thermopile sensor plus the ratio of the thermal resistance between watch case to air and the thermal resistance between thermopile sensor to watch case, and fixed humidity or imported humidity level to calculate the body core temperature based on experimental data and curve fitting. The skin temperature compensation can be set differently for different sex gender, different standard deviation of wrist temperature and external relative humidity reading.

Energy storage device with an energy storage cell (1) in the form of a lithium-ion battery with at least one electrode winding or electrode stack (2 - 6) comprising at least one anode and cathode layer (2, 3), - at least one temperature sensor (10) which is arranged at least partially inside the electrode winding or electrode stack (2 - 6) and is designed to detect a time-dependent temperature profile (T) inside the electrode winding or electrode stack (2 - 6), and - a processing unit (20) which is designed to detect a change in the slope of the time course of the temperature (T) and to infer, based on the change in the slope, a deposition of lithium ions on the at least one anode layer (2), wherein - the temperature sensor (10) has a thermopile formed from two or more thermocouples (14) connected in series, - the thermocouples are each formed from two electrical conductors (11, 12) made of different materials connected at a contact point (13), - the thermopile has two or more contact points (13, 13') at which the two electrical conductors (11, 12) made of different materials are connected to each other, and - the thermocouples (14) are arranged such that a first subset of the contact points (13) is located inside the electrode winding or electrode stack (2 - 6) and a second subset of the contact points (13') is located outside the electrode winding or electrode stack (2 - 6).

A structure of an infrared thermopile sensor chip and a manufacturing method therefor. The manufacturing method comprises the following steps: a, providing a substrate layer (100), the substrate layer (100) having an upper surface (110) and a lower surface (120); b, depositing a dielectric-dipole layer group (200) on the upper surface (110) of the substrate layer (100), wherein the steps of depositing the dielectric-dipole layer group (200) comprise: b1, depositing a first dielectric (211b) on the upper surface (110) of the substrate layer (100), and patterning the first dielectric (211b) to obtain a first dielectric layer (211) having a plurality of dielectric holes (420), the dielectric holes (420) being communicated with an upper surface of the first dielectric layer (211) and the substrate layer (100); and b2, depositing a first dipole layer (221) on the upper surface of the first dielectric layer (211), the first dipole layer (221) filling the dielectric holes (420); and e, from the lower surface (120) of the substrate layer (100), etching the substrate layer (100) and the first dipole layer (221) in the dielectric holes (420), so as to manufacture an infrared thermopile sensor chip having a back cavity (400), thereby improving heat dissipation capability, and increasing thermopile signal quantity.

The present disclosure relates to systems and methods for temperature sensing using thermopiles integrated with flexible circuits. Robust estimation of temperature both within and outside of a device can be achieved using one or more absolute temperature sensors optionally in conjunction with thermopile heat flux sensors. A thermopile temperature sensing system can measure a temperature gradient across two locations within the device to estimate absolute temperature at impractical locations for measurement using absolute temperature sensors. Using a heat flux model associated with the device, the thermopile temperature sensing system can be used to estimate a temperature associated with an object in contact with an outer surface of the device, such as a user's skin temperature. Additionally, the thermopile temperature sensing system can be used to estimate an ambient air temperature. Within the device, temperature measurements from the thermopile temperature sensors can be used to compensate sensor measurements, such as when the accuracy or reliability of a sensor varies with temperature.

The invention provides a preparation method of a pressure and infrared thermopile sensor and the sensor. The preparation method comprises the following steps of: forming a piezoresistor structure in a second region of a top silicon layer of an SOI (Silicon On Insulator) substrate; forming a first protection layer on the surface of the top silicon layer; forming a first electric connection structure of which the top extends to an external region of the second region on a part of the surface of the piezoresistor structure; depositing a second protection layer on the surface of the first protection layer, and forming a polycrystalline silicon structure comprising at least two polycrystalline silicon layers which are spaced up and down on the second protection layer on a part of the first region and the second region; forming a second electric connection structure on a part of the surface of the first electric connection structure on the periphery of the second region; and forming a third electric connection structure of the polycrystalline silicon layer in the series polycrystalline silicon structure while forming the second electric connection structure, and forming a cavity penetrating through the bottom silicon layer on the back surface of the SOI substrate. Therefore, a temperature measurement function and a pressure measurement function are realized with relatively high integration density.

The application provides a pressure and heat multiplexing sensor and a preparation method thereof, the pressure and heat multiplexing sensor has a suspended structure thermoelectric pile and can simultaneously measure pressure and temperature. Further, the pressure and heat multiplexing sensor adopts a bridge structure, from bottom to top, a substrate, a support layer, a thermoelectric pile, an infrared absorption layer and a rigid packaging layer, the thermoelectric pile adopts a multi-stage series structure, the hot junction area of the thermoelectric pile is located in the center area of the micro-bridge suspended structure, the cold junction area is located on the support layer on the top of the substrate, the center area of the micro-bridge suspended structure is formed into a cavity structure by isotropic dry etching from the back, the infrared absorption layer covers the center area of the micro-bridge suspended structure, and the rigid packaging layer covers the upper surface of the sensor. The application can simultaneously measure pressure and temperature, is manufactured by using standard CMOS process general materials and manufacturing methods, meets the integrated and miniaturized demand of the intelligent sensing field, and is expected to be widely applied.

The invention discloses a thermoelectric power generation and water production device based on interface evaporation, and relates to the technical field of solar comprehensive utilization. Comprising a thermoelectric module, thermoelectric pins and a proton exchange membrane electrolytic bath, the thermoelectric module comprises a photo-thermal end, a thermoelectric conversion layer, a cold end and a pin. The outer side of the thermoelectric conversion layer is integrally sealed to form a closed cavity; the photo-thermal end converts solar energy into heat energy to drive water in the water conveying layer to generate interface evaporation, the evaporation heat absorption effect effectively inhibits heat transfer to the cold end, and a stable temperature difference is formed on the two sides of the thermopile. The thermopile is formed by connecting a plurality of pairs of constantan-nickel silicon chromium alloy wires in series, penetrates through the thermoelectric conversion layer and is connected with the photo-thermal end and the cold end in a radial mode, and the temperature difference is converted into electric energy to be output based on the Seebeck effect. The thermoelectric module is electrically connected with the proton exchange membrane electrolytic cell to stably generate green hydrogen. Through the coupling interface evaporation and thermoelectric conversion process, fresh water, electric energy and hydrogen are synchronously produced in the same device, and the comprehensive utilization efficiency of solar energy is remarkably improved.

The utility model belongs to the technical field of laser welding systems, and relates to a laser welding system and an infrared temperature measurement protection system device, which comprise an infrared temperature measurement protection system device, a laser, a water cooling machine alarm, a wire feeder, an air valve, a galvanometer motor and a 24V power supply, the infrared temperature measurement protection system device is installed in a light emitting gun body of a laser welding control system and comprises an infrared temperature measurement probe, an MCU processor and a screen. The infrared temperature measuring probe is connected with the MCU processor through an I IC connecting line, and the screen is connected with the MCU processor. The infrared temperature measuring probe is composed of three digital thermopile sensors, two resistors and two voltage-regulator tubes are arranged on an I IC connecting line, and the three digital thermopile sensors are distributed in a light emitting gun body of the laser welding control system and are respectively aligned with the protective mirror, the collimating mirror and the reflecting mirror to collect temperature. The problem of burning points of the laser welding system when the room temperature is higher than 25 DEG C can be solved, all parts of devices of the system are protected, and the overall safety of the laser welding system is improved.

A thermopile structure and its fabrication method are disclosed. The thermopile structure includes: a substrate; a first insulating layer located on the surface of the substrate; a first metal layer located on a partial surface of the first insulating layer; a second insulating layer located on the exposed surface of the first insulating layer and the surface of the first metal layer; a vertically distributed thermopile including a plurality of thermocouples connected in series, each thermocouple including a first thermoelectrode and a second thermoelectrode; a second metal layer located on the surface of the second insulating layer, the second metal layer being used to connect the first thermoelectrode of any thermocouple to the second thermoelectrode of another adjacent thermocouple; an absorption layer located on the surface of the second insulating layer, the surface of the second metal layer, the exposed surface of the first thermoelectrode, and the exposed surface of the second thermoelectrode; and a third metal layer located within the absorption layer. This invention improves the device's responsivity and performance by increasing the integration density of the thermocouples.

The application provides an infrared thermoelectric array and a preparation method thereof. The method comprises the following steps: providing a substrate with infrared thermocouples arranged in an array on the front surface; forming a patterned dielectric layer and a release groove etching window on the back surface of the substrate, wherein the dielectric layer comprises an outer dielectric layer and an inner dielectric layer; forming a photoresist layer on the outer dielectric layer; etching the substrate to a first preset depth by deep reactive ion etching through the release groove etching window; removing the inner dielectric layer; and etching the substrate exposed on the inner part of the outer dielectric layer by deep reactive ion etching to form a plurality of bosses arranged in an array. The infrared thermoelectric array prepared by the method has reduced thermal conductivity and reduced risk of film rupture. In addition, the bosses can quickly conduct heat, so that the temperature of the cold junction area is consistent with the ambient temperature. When the bosses are etched, only the side etching of the remaining substrate needs to be considered, which greatly reduces the influence of side etching on the bosses, thereby greatly reducing the size of the bosses and improving the array integration.

The application discloses a kind of laser power measurement method, system, equipment, product and medium, the method includes: obtaining first thermoelectric voltage dataset;Based on the operation processing to first thermoelectric voltage dataset, obtain the first voltage rate of change sequence corresponding to first thermoelectric voltage dataset, wherein the first voltage rate of change sequence includes the first voltage rate of change between the first voltage signal value collected in every two adjacent sampling time in acquisition process;Based on the search to first voltage rate of change sequence, obtain the first maximum voltage rate of change in first voltage rate of change sequence;Based on first maximum voltage rate and calibration curve, obtain the test power value of the laser output to be tested, wherein the calibration curve is fitted based on several calibration powers and the second maximum voltage rate obtained based on several calibration powers for several calibration processes.This application can effectively solve the problem of slow response time of thermoelectric pile type laser power meter.

An enclosed spaces fire detection system is provided. An enclosed spaces fire detection system includes a housing configured to be mounted in an enclosed space, such as an attic, a garage, a kitchen, or a laundry room; and at least one infrared imaging camera supported by the housing and including a thermopile focal plane array (FPA) with an antireflective layer on a thermopile lens configured to pass infrared radiance in a first range corresponding to a fire in the enclosed space.