21 results about "Microbolometer" patented technology

The insulation arm comprises a reinforcement made of an electrically insulating material and a metal core sandwiched in the reinforcement. The microboard is electrically connected to the readout circuit by the core. The thermal insulation arm is such that it comprises a first region and a second region inside which regions the reinforcement respectively has a first transverse surface area Sr,1 and a second transverse surface area Sr,2, and the core respectively has a first transverse surface area Sa,1 and a second transverse surface area Sa,2. The microbolometer is such that the transverse cross sections satisfy the relationship: Sa,1 / Sr,1 < 0.8(Sa,2 / Sr,2).

This invention provides a microbridge structure and its fabrication method, as well as an uncooled infrared microbolometer, belonging to the fields of microelectromechanical systems (MEMS) and infrared detection technology. The microbridge structure includes two diagonally arranged anchor posts, two supporting legs, a bridge deck, and an umbrella-shaped canopy. Each supporting leg consists of multiple alternating longitudinal segments and multiple transverse segments connected end-to-end. The longitudinal segments extend at an angle greater than 45 degrees relative to the horizontal plane, while the transverse segments extend parallel to the horizontal plane. One end of each supporting leg is connected to an anchor post, and the other end is connected to the end of the bridge deck, suspending the bridge deck. This design maintains the slender characteristics of the supporting legs to ensure low thermal conductivity and high thermal insulation performance, while significantly reducing the residual stress on the supporting legs by utilizing the high cross-sectional moment of inertia of the longitudinal segments. This improves the mechanical stability and deformation resistance of the microbridge structure, solving the problem of balancing stability and thermal performance in traditional horizontal supporting leg structures. This invention also provides a corresponding fabrication method.

The invention relates to the technical field of micro electro mechanical systems, and particularly discloses a method for improving the stability of a micro-bridge structure of a micro-bolometer, the micro-bridge structure of the micro-bolometer, the micro-bolometer and a chip. According to the method for improving the stability of the micro-bridge structure of the micro-bolometer, under the condition that the length of a bridge leg is kept unchanged, the height and the width of the bridge leg are synchronously adjusted, so that the ratio of the height to the width of the bridge leg is larger than 1: 3. The thermal conductivity efficiency is reduced by reducing the width of the bridge legs, so that the response rate of the microbolometer is improved; meanwhile, by increasing the height of the bridge legs, the mechanical strength lost due to width reduction is compensated, the dual purposes of high response rate and high mechanical stability of the microbolometer are finally achieved, and the technical bottleneck that an existing microbridge structure cannot give consideration to high response rate and stable mechanical performance at the same time is solved.

The application discloses a glass-packaged micro thermal conductivity detector wafer and a preparation method thereof, and belongs to the technical field of gas detection. The wafer comprises a plurality of micro thermal conductivity detectors; the plurality of micro thermal conductivity detectors are arranged on a packaging wafer; the packaging wafer is composed of a first glass wafer and a second glass wafer; a plurality of packaging plates are arranged on the first glass wafer; and a plurality of substrates are arranged on the second glass wafer; a plurality of thermal conductivity cells are arranged on the packaging plates; symmetric second half-groove channels are arranged on both sides of the thermal conductivity cells; a plurality of first half-groove channels are arranged on the substrates; the first half-groove channels and the second half-groove channels are matched to form through grooves; the packaging wafer further comprises a plurality of micro circuits; the micro circuit comprises a Wheatstone bridge and electrodes connected to both ends of the Wheatstone bridge; and pads are arranged on the top of the electrodes. The application enlarges the effective sealing area, improves the air tightness, shortens the heat dissipation path of the thermal element, effectively reduces heat loss, and improves the sensitivity of the device.

This invention provides a thermal deformation compensation device and method for the optical window of an airborne optoelectronic pod, belonging to the field of aerospace optical imaging technology. It solves the problem that there is currently no direct method to measure and correct image quality degradation caused by uneven temperature distribution in the window glass. The airborne optoelectronic pod's optical window thermal deformation compensation device is installed inside the pod and includes a forward telescope system, a microbolometer, a deformable mirror, multiple beam splitters, and multiple reflectors. The forward telescope system is located inside the pod, and the microbolometer is mounted on the forward telescope system to generate a thermal image of the pod's first optical window glass. The deformable mirror is located at the rear end of the forward telescope system. Multiple beam splitters and multiple reflectors divide the light rays passing through the deformable mirror into multiple imaging optical paths. This device can perform real-time dynamic correction of image quality changes in the optical system caused by thermal deformation.

The present application relates to a kind of quantitative regulation method of multiphase vanadium oxide and the application of multiphase vanadium oxide, belong to laser application technical field.The purpose of the present application is to solve the problems such as low thermal sensitivity of existing temperature measuring device, miniaturization is difficult, application is limited greatly, provide a kind of quantitative regulation method of multiphase vanadium oxide and the application of multiphase vanadium oxide;The temperature measuring device is based on femtosecond laser direct writing technology processing, without mask, can flexibly realize the characteristic regulation of thermosensitive material, high-precision microstructured preparation etc..Meanwhile, the temperature measuring device has high performance (high TCR, low noise) and high response speed, has microscale thin film design (can maximize the specific surface area of device), can be applied to calorimetric ionizing radiation dosimetry, microbolometer etc. technical field.

Techniques are provided for facilitating electrostatic pull-in mitigation for microbolometer systems and methods. In one example, an infrared imaging device includes a readout circuit having a surface defining a plane. The infrared imaging device further includes a microbolometer coupled to the readout circuit. The microbolometer includes a bridge suspended above and parallel to the readout circuit's surface in a direction substantially perpendicular to the plane. The bridge includes a first bridge contact and a second bridge contact. The infrared imaging device further includes a first reflective layer readout circuit's surface and between the bridge and the readout circuit. The first bridge contact and the second bridge contact are associated with and suspended above only the first reflective layer and the second reflective layer, respectively, in the direction. Related methods and systems are also provided.

The invention discloses a micro-bridge unit for micro-measuring radiant heat, an array structure of the micro-bridge unit and a manufacturing method of the micro-bridge unit. Four bridge piers of a plurality of micro-bridge units in a rectangular array are respectively arranged close to two opposite edges of a corresponding substrate in a manner that every two bridge piers form a group; the interval between the two bridge piers of each group is controlled to be the minimum value under the condition that the manufacturing process is allowed in the length direction of the corresponding edge; the two groups of piers are connected with a bridge surface arranged between the two groups of piers through two groups of bridge arms symmetrically arranged according to the center of the substrate; the two concave structures of the two first bridge arms and the irregular structures of the two second bridge arms of the two sets of bridge arms form a rectangular frame on the periphery of the bridge floor. Each concave structure is connected with the corresponding pier through a first H-shaped structure; and each irregular structure is connected with the corresponding pier through a second H-shaped structure. And during multiple constructions, multiple film layers are deposited one by one, and photoetching etching is carried out. The application of the invention can give consideration to both microbridge support stability and reasonable layout of the sensitive layer.

The application discloses a high-temperature-coefficient thermoelectric conversion structure and a micro-bolometer based on a CMOS process. The thermoelectric conversion structure comprises an N well, an N+ type doped layer, a shallow trench isolation, a metal silicide, a contact hole and a metal wire layer. The N well is annular, and the N+ type doped layer and the shallow trench isolation are arranged in the N well. The metal silicide is located on the surface of the N well, a part of which forms a Schottky contact with the N well as an anode, and another part of which forms an ohmic contact with the N+ type doped layer as a cathode, and the anode and the cathode are isolated by the shallow trench isolation. The metal silicides of the anode and the cathode are connected to the metal wire layer through the contact holes respectively. The structure has a large temperature coefficient and can significantly improve the sensitivity to temperature changes. The micro-bolometer prepared based on the thermoelectric conversion structure has high sensitivity, low noise and cost advantages, can be integrated with a readout circuit, and can realize efficient detection of infrared radiation.

A housing assembly for housing a microbolometer within a satellite includes a container for at least partially enclosing the microbolometer, so as to exchange heat with the microbolometer, and a phase change material. The container comprises a cavity within a wall portion of the container. The cavity contains the phase change material. The disclosure further relates to a microbolometer assembly comprising the housing assembly, and to a satellite comprising the housing assembly and / or the microbolometer assembly.

The utility model relates to temperature measurement technical field especially relates to a temperature measurement module and temperature measurement equipment. The utility model discloses temperature measurement module, including the main control module of built -in wireless communication module, set up with the collection module of microbolometer and thermocouple sensor, and be used for the power module of power supply for main control module and collection module. The main control module can compensate the temperature distribution information that microbolometer sensor obtains according to the ambient temperature information that thermocouple sensor obtains, to output the temperature measurement data that calibrates through ambient temperature. Make temperature measurement module not only have the temperature measurement range of wide, and ensure the high accuracy of temperature measurement, no matter under extreme environment or face the object of temperature change bigger, can provide stable, reliable temperature data, greatly promote the applicability and precision of temperature measurement.

The application discloses an antenna-coupled micro-bridge structure for a small-pixel microbolometer and a preparation method thereof, and belongs to the technical field of photoelectric detection. The spiral antenna and the electrode bridge leg are arranged alternately, the proportion of the small-pixel micro-bridge structure thermal isolation support bridge leg is improved, the bridge leg is lengthened, the thermal conductivity is reduced, and the temperature rise of the microbolometer is improved; when the spiral antenna arm is used for coupling the thermal sensitive unit to receive infrared radiation, the absorption of light energy can be more concentrated on the thermal sensitive unit, the temperature rise of the thermal sensitive unit is further improved under the condition that the total light absorption rate of the device is similar, the effective absorption area of the micro-bridge structure is equivalent to being increased, compared with the traditional microbolometer, energy can be better collected, and the detection efficiency is improved; while low thermal conductivity and high absorption rate are obtained, the thermal mass of the micro-bridge structure is reduced; the double-layer micro-bridge structure of the traditional upper absorption layer and the lower thermal isolation layer is replaced, the preparation process is simplified, and the device manufacturing cost can be reduced.

The invention provides a chip infrared spectrometer and a preparation method thereof, and the preparation method comprises the following steps: providing a readout integrated circuit wafer, and forming a plurality of miniature bolometer arrays on the readout integrated circuit wafer to obtain an infrared detector wafer; providing a second wafer, and preparing a filter array on the second wafer to obtain a filter wafer; and bonding the infrared detector wafer and the filter wafer, wherein the units of the micro bolometer array and the units of the filter array are in one-to-one correspondence on an incident light path. A chip infrared spectrometer comprises an infrared detector wafer and a filter wafer, wherein the infrared detector wafer is composed of a readout integrated circuit wafer, a conductive base and a miniature bolometer array. The surface of the filter wafer is a metasurface pattern, and a cavity is formed in the back area of the pattern; the filter wafer is bonded on the infrared detector wafer, the miniature bolometers and the filters are in one-to-one correspondence on an incident light path, and a vacuum sealing cavity is formed on the surface of the infrared detector wafer.

The invention belongs to the technical field of MEMS devices, and particularly relates to a preparation method and application of a double-layer micro-bolometer. According to the preparation method of the double-layer micro-bolometer provided by the invention, aiming at the defect that a second sacrificial layer of thermocuring polyimide which is cured at low temperature is easy to corrode and dissolve, the degumming liquid NMP which is difficult to hydrolyze imide bonds is used in a wet degumming process, so that a deposited optical absorption structure has relatively strong infrared absorption capability, and the thermal conductivity of the double-layer micro-bolometer is improved. The performance of the micro-bolometer is improved; meanwhile, in the wet-method photoresist removing process, a combined photoresist removing solution of an EKC photoresist removing solution and an NMP photoresist removing solution is used for soaking, then the NMP photoresist removing solution is used for stripping, and the advantages of the EKC photoresist removing solution and the NMP photoresist removing solution are combined, so that the detection performance of the double-layer micro-bolometer is further improved; therefore, the technical problem that the performance of the prepared micro-bolometer is reduced due to the fact that the thermocuring polyimide sacrificial layer is easy to corrode and dissolve in the existing preparation process of the micro-bolometer is solved.

The application belongs to the technical field of optoelectronic sensors, and particularly relates to a high-speed infrared microbolometer and a preparation method thereof. The application adopts a deep subwavelength super-structured film optical structure, integrates subwavelength-sized super-absorption structures and a thermal sensitive material on a wafer, enhances infrared band absorption, and effectively reduces the thermal capacity of the device; in the design of the pixel, a small-size structure is realized, the low thermal capacity characteristics of the response element are utilized, the overall thermal capacity of the device is maximally reduced, and the response speed is significantly improved; the device can realize a microsecond-level response time in a medium-long infrared wave band, and has the advantages of large-angle detection capability, response waveband tunability, room temperature operation and the like.

The invention relates to a microbolometer comprising a substrate, a readout circuit, and a microboard suspended above the substrate by a thermal insulation arm. The insulation arm includes a reinforcement made of an electrically insulating material and a metal core sandwiched within the reinforcement. The microboard is electrically connected to the readout circuit via the core. The thermal insulation arm comprises a first region and a second region, within which the reinforcement has a first transverse surface Sr,1 and a second transverse surface Sr,2, respectively, and the core has a first transverse surface Sa,1 and a second transverse surface Sa,2, respectively. The microbolometer is such that the cross-sections satisfy the relation Sa,1 / Sr,1 < 0.8(Sa,2 / Sr,2). (See Figure 3A for the abstract.)

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a second having a first dimension that extends in a first direction substantially parallel to the plane and a second dimension that extends in a second direction away from the plane. The first dimension is less than the second dimension. The segment includes a metal layer and a layer formed on a side of the metal layer.

The application discloses a micro thermal conductivity detector based on TGV and a preparation method thereof, and belongs to the technical field of gas detection. The micro thermal conductivity detector comprises a plurality of micro thermal conductivity detectors, the plurality of micro thermal conductivity detectors are arranged on a packaging wafer, the packaging wafer is composed of a silicon wafer and a glass wafer, a plurality of silicon substrates are arranged on the silicon wafer, and a plurality of glass plates are arranged on the glass wafer; a plurality of first half-pools are arranged on the silicon substrates, first half-groove channels are symmetrically arranged on the two sides of the first half-pools, a plurality of second half-pools are arranged on the glass plates, second half-groove channels are symmetrically arranged on the two sides of the second half-pools, the first half-groove channels and the second half-groove channels are matched to form through grooves, and the first half-pools and the second half-pools are matched to form thermal conductivity pools. The application realizes wafer-level packaging, improves the packaging density, expands the effective packaging area, improves the air tightness, shortens the heat dissipation path of the thermal element, effectively reduces heat loss, and improves the sensitivity of the device.

A thermal imaging sensor may include: a pixel array in which pixels with microbolometers are arranged in an M×N matrix, where M and N are integers greater than or equal to 2; a row controller configured to output a row control signal through one or more row control signal lines to select and control a predetermined row from among multiple rows; switches connected to the one or more row control signal lines and disposed at each pixel; and a plurality of column integrators configured to read a current signal from the pixel array obtained through a pixel output line and convert it into a voltage signal.

The present application provides a microbolometer and a thermal sensing method thereof. Each switching circuit switches the first connection point or the second connection point of the corresponding thermal sensing pixel to be connected to different signal transmission lines or a shared connection line, to adjust the connection mode of the plurality of thermal sensing pixels, and change the sensing signals provided by the plurality of thermal sensing pixels.

The invention belongs to the technical field of photoelectronic sensors, and particularly relates to a high-speed infrared micro-bolometer and a preparation method thereof. According to the invention, by adopting a deep sub-wavelength super-structure film optical structure, on-chip integration is carried out on a super-absorption structure with a sub-wavelength size and a heat-sensitive material, so that the heat capacity of the device is effectively reduced while the absorption of an infrared band is enhanced; in the aspect of pixel design, a small-size structure is realized, and the overall thermal capacity of the device is reduced to the greatest extent by utilizing the low thermal capacity characteristic of a response element, so that the response speed is remarkably improved; the device can realize microsecond-level response time in medium and long infrared bands, and has the advantages of wide-angle detection capability, tunable response band, room-temperature work and the like.