8 results about "Microbolometer" patented technology

This invention provides a microbridge structure and its fabrication method, as well as an uncooled infrared microbolometer, belonging to the fields of microelectromechanical systems (MEMS) and infrared detection technology. The microbridge structure includes two diagonally arranged anchor posts, two supporting legs, a bridge deck, and an umbrella-shaped canopy. Each supporting leg consists of multiple alternating longitudinal segments and multiple transverse segments connected end-to-end. The longitudinal segments extend at an angle greater than 45 degrees relative to the horizontal plane, while the transverse segments extend parallel to the horizontal plane. One end of each supporting leg is connected to an anchor post, and the other end is connected to the end of the bridge deck, suspending the bridge deck. This design maintains the slender characteristics of the supporting legs to ensure low thermal conductivity and high thermal insulation performance, while significantly reducing the residual stress on the supporting legs by utilizing the high cross-sectional moment of inertia of the longitudinal segments. This improves the mechanical stability and deformation resistance of the microbridge structure, solving the problem of balancing stability and thermal performance in traditional horizontal supporting leg structures. This invention also provides a corresponding fabrication method.

Techniques are provided for facilitating electrostatic pull-in mitigation for microbolometer systems and methods. In one example, an infrared imaging device includes a readout circuit having a surface defining a plane. The infrared imaging device further includes a microbolometer coupled to the readout circuit. The microbolometer includes a bridge suspended above and parallel to the readout circuit's surface in a direction substantially perpendicular to the plane. The bridge includes a first bridge contact and a second bridge contact. The infrared imaging device further includes a first reflective layer readout circuit's surface and between the bridge and the readout circuit. The first bridge contact and the second bridge contact are associated with and suspended above only the first reflective layer and the second reflective layer, respectively, in the direction. Related methods and systems are also provided.

The application discloses a high-temperature-coefficient thermoelectric conversion structure and a micro-bolometer based on a CMOS process. The thermoelectric conversion structure comprises an N well, an N+ type doped layer, a shallow trench isolation, a metal silicide, a contact hole and a metal wire layer. The N well is annular, and the N+ type doped layer and the shallow trench isolation are arranged in the N well. The metal silicide is located on the surface of the N well, a part of which forms a Schottky contact with the N well as an anode, and another part of which forms an ohmic contact with the N+ type doped layer as a cathode, and the anode and the cathode are isolated by the shallow trench isolation. The metal silicides of the anode and the cathode are connected to the metal wire layer through the contact holes respectively. The structure has a large temperature coefficient and can significantly improve the sensitivity to temperature changes. The micro-bolometer prepared based on the thermoelectric conversion structure has high sensitivity, low noise and cost advantages, can be integrated with a readout circuit, and can realize efficient detection of infrared radiation.

The application discloses an antenna-coupled micro-bridge structure for a small-pixel microbolometer and a preparation method thereof, and belongs to the technical field of photoelectric detection. The spiral antenna and the electrode bridge leg are arranged alternately, the proportion of the small-pixel micro-bridge structure thermal isolation support bridge leg is improved, the bridge leg is lengthened, the thermal conductivity is reduced, and the temperature rise of the microbolometer is improved; when the spiral antenna arm is used for coupling the thermal sensitive unit to receive infrared radiation, the absorption of light energy can be more concentrated on the thermal sensitive unit, the temperature rise of the thermal sensitive unit is further improved under the condition that the total light absorption rate of the device is similar, the effective absorption area of the micro-bridge structure is equivalent to being increased, compared with the traditional microbolometer, energy can be better collected, and the detection efficiency is improved; while low thermal conductivity and high absorption rate are obtained, the thermal mass of the micro-bridge structure is reduced; the double-layer micro-bridge structure of the traditional upper absorption layer and the lower thermal isolation layer is replaced, the preparation process is simplified, and the device manufacturing cost can be reduced.

The application belongs to the technical field of optoelectronic sensors, and particularly relates to a high-speed infrared microbolometer and a preparation method thereof. The application adopts a deep subwavelength super-structured film optical structure, integrates subwavelength-sized super-absorption structures and a thermal sensitive material on a wafer, enhances infrared band absorption, and effectively reduces the thermal capacity of the device; in the design of the pixel, a small-size structure is realized, the low thermal capacity characteristics of the response element are utilized, the overall thermal capacity of the device is maximally reduced, and the response speed is significantly improved; the device can realize a microsecond-level response time in a medium-long infrared wave band, and has the advantages of large-angle detection capability, response waveband tunability, room temperature operation and the like.

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a substrate having contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a second having a first dimension that extends in a first direction substantially parallel to the plane and a second dimension that extends in a second direction away from the plane. The first dimension is less than the second dimension. The segment includes a metal layer and a layer formed on a side of the metal layer.

The application discloses a micro thermal conductivity detector based on TGV and a preparation method thereof, and belongs to the technical field of gas detection. The micro thermal conductivity detector comprises a plurality of micro thermal conductivity detectors, the plurality of micro thermal conductivity detectors are arranged on a packaging wafer, the packaging wafer is composed of a silicon wafer and a glass wafer, a plurality of silicon substrates are arranged on the silicon wafer, and a plurality of glass plates are arranged on the glass wafer; a plurality of first half-pools are arranged on the silicon substrates, first half-groove channels are symmetrically arranged on the two sides of the first half-pools, a plurality of second half-pools are arranged on the glass plates, second half-groove channels are symmetrically arranged on the two sides of the second half-pools, the first half-groove channels and the second half-groove channels are matched to form through grooves, and the first half-pools and the second half-pools are matched to form thermal conductivity pools. The application realizes wafer-level packaging, improves the packaging density, expands the effective packaging area, improves the air tightness, shortens the heat dissipation path of the thermal element, effectively reduces heat loss, and improves the sensitivity of the device.

A thermal imaging sensor may include: a pixel array in which pixels with microbolometers are arranged in an M×N matrix, where M and N are integers greater than or equal to 2; a row controller configured to output a row control signal through one or more row control signal lines to select and control a predetermined row from among multiple rows; switches connected to the one or more row control signal lines and disposed at each pixel; and a plurality of column integrators configured to read a current signal from the pixel array obtained through a pixel output line and convert it into a voltage signal.