204 results about "Microbolometer" patented technology

The present invention generally provides a terahertz (THz) imaging system that includes a source for generating radiation (e.g., a quantum cascade laser) having one or more frequencies in a range of about 0.1 THz to about 10 THz, and a two-dimensional detector array comprising a plurality of radiation detecting elements that are capable of detecting radiation in that frequency range. An optical system directs radiation from the source to an object to be imaged. The detector array detects at least a portion of the radiation transmitted through the object (or reflected by the object) so as to form a THz image of that object.

Electromagnetic radiation detecting and sensing systems using carbon nanotube fabrics and methods of making the same are provided. In certain embodiments of the invention, an electromagnetic radiation detector includes a substrate, a nanotube fabric disposed on the substrate, the nanotube fabric comprising a non-woven network of nanotubes, and first and second conductive terminals, each in electrical communication with the nanotube fabric, the first and second conductive terminals disposed in space relation to one another. Nanotube fabrics may be tuned to be sensitive to a predetermined range of electromagnetic radiation such that exposure to the electromagnetic radiation induces a change in impedance between the first and second conductive terminals. The detectors include microbolometers, themistors and resistive thermal sensors, each constructed with nanotube fabric. Nanotube fabric detector arrays may be formed for broad-range electromagnetic radiation detecting. Methods for making nanotube fabric detectors, arrays, microbolometers, thermistors and resistive thermal sensors are each described.

A microbolometer infrared sensor utilizes a porous silicon bridge as its thermal isolating and mechanical supporting structure. Porous silicon formed from single crystal silicon on lightly doped p-type silicon has a thermal conductivity lower than silicon dioxide and silicon nitride, and, therefore, when used as a mechanical supporting structure, can offer better thermal isolation performance. The porous silicon layer can be fabricated much thicker than silicon dioxide and silicon nitride membranes since there is almost no residual stress therein. A thicker porous silicon bridge has higher mechanical support strength. The porous silicon process is a low temperature process. It facilitates a fabrication strategy of microelectronics first and micromechanics last.

A leak detection and identification system a Fabry-Perot etalon, an imaging lens, a microbolometer camera, and a computer for spectral and image data post-processing, wherein the data peaks are deconvoluted for use thus avoiding the need for bandpass filters.

An infra-red imaging camera comprises focusing optics for gathering infra-red energy from an external scene, and an uncooled and unshielded detector arranged to detect infra red energy. Internal temperature sensing together with approximation of the temperature response of the camera provides a time varying calibration that allows the infra-red energy received at the detector to be used as a temperature measurement for objects in the camera's field of view.

A wearable system configured to collect thermal measurements related to respiration. The system includes a frame configured to be worn on a user's head, and at least one non-contact thermal camera (e.g., thermopile or microbolometer based sensor). The thermal camera is small and lightweight, physically coupled to the frame, located close to the user's face, does not occlude any of the user's mouth and nostrils, and is configured to take thermal measurements of: a portion of the right side of the user's upper lip, a portion of the left side of the user's upper lip, and a portion of the user's mouth. The thermal measurements are forwarded to a computer that calculates breathing related parameters, such as breathing rate, an extent to which the breathing was done through the mouth, an extent to which the breathing was done through the nostrils, and ratio between exhaling and inhaling durations.

A sensory substitution device according to an embodiment of the invention includes a thermal imaging array for sensing thermal characteristics of an external scene. The device includes a visual prosthesis adapted to receive input based on the scene sensed by the thermal imaging array and to convey information based on the scene to a user of the sensing device. The visual prosthesis is adapted to simultaneously convey to the user different visual information corresponding to portions of the scene having different thermal characteristics. One type of thermal imaging array includes a microbolometer imaging array, and one type of visual prosthesis includes a retinal implant. According to additional embodiments, an apparatus for obtaining thermal data includes a thermal detector adapted to sense thermal characteristics of an environment using a plurality of pixels. The apparatus also includes a pixel translator, operably coupled with the thermal detector, adapted to translate pixel data of the thermal detector to a lower resolution. The apparatus also includes an interface, operably coupled with the pixel translator, adapted to communicate the thermal characteristics of the environment to a user of the apparatus at a lower resolution than sensed by the thermal detector.

Ultraviolet (UV), Terahertz (THZ) and Infrared (IR) radiation detecting and sensing systems using graphene nanoribbons and methods to making the same. In an illustrative embodiment, the detector includes a substrate, single or multiple layers of graphene nanoribbons, and first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance to increase sensitivity to IR radiation. Absorption over a wide wavelength range of 200 nm to 1 mm are possible based on the two alternative devices structures described within. These two device types are a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules. The second device structure consists of a graphene nanoribbon layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector.

Infrared imaging systems and methods incorporating the use of pixelated filter arrays integrated with the imaging detector. In one example, an infrared imaging system includes imaging optics that focus infrared radiation towards a focal plane of the system, an uncooled focal plane array sensor configured to receive the infrared radiation from the imaging optics, and a processor coupled to the uncooled focal plane array sensor and configured to receive and process image data received from the uncooled focal plane array sensor. The uncooled focal plane array sensor includes a two-dimensional array of microbolometer pixels and a corresponding two-dimensional filter array integrated and aligned with the two-dimensional array of microbolometer pixels such that each microbolometer pixel has a corresponding filter. The filter array is configured to filter the infrared radiation into at least two spectral bands or at least two polarizations.

This disclosure provides methods to integrate heat generating nanoparticles to microelectromechanical (MEMs) and photonic devices such as microbolometers and thermopiles for better photodetection and electrical energy generation. Nanoparticles include noble metal and semiconductor nanocrystals of different shapes, as light sensing and heat generating materials.

A microbolometer includes a micro-bridge structure for uncooling infrared or terahertz detectors. The thermistor and light absorbing materials of the micro-bridge structure are the vanadium oxide-carbon nanotube composite film formed by one-dimensional carbon nanotubes and two-dimensional vanadium oxide film. The micro-bridge is a three-layer sandwich structure consisting of a layer of amorphous silicon nitride base film as the supporting and insulating layer of the micro-bridge, a layer or multi-layer of vanadium oxide-carbon nanotube composite film in the middle of the micro-bridge as the heat sensitive and light absorbing layer of the microbolometer, and a layer of amorphous silicon nitride top film as the stress control layer and passivation of the heat sensitive film. The microbolometer and method for manufacturing the same can overcome the shortcomings of the prior art, improve the performance of the device, reduce the cost of raw materials and is suitable for large-scale industrial production.

On-board non-uniformity correction calibration methods for a microbolometer focal plane array in a thermal camera are disclosed. The methods include performing first calculations in the processor unit of the thermal camera to generate and apply a set of coarse correction bias voltages to the detector elements. The method also includes performing calculations in the external computer based on image data collected by the thermal camera with the coarse correction bias voltages applied to the detector elements to generate a set of fine correction bias voltages. The method also includes downloading the fine correction bias voltages to the thermal camera and applying the fine correction voltages to the detector elements to establish a fine calibration of the microbolometer focal plane array.

According to one aspect, the invention relates to a microbolometer array for thermal detection of light radiation in a given spectral band, comprising a supporting substrate and an array of microbolometers (300) of given dimensions, arranged in an array. Each of said microbolometers comprises a membrane (301) suspended above said supporting substrate, said membrane consisting of an element (305) for absorbing the incident radiation and a thermometric element (304) in thermal contact with the absorber, electrically insulated from said absorber element. The absorber element comprises at least one first metal / insulator / metal (MIM) structure comprising a multilayer of three superposed films of submicron-order thickness i.e. a first metallic film (311), a dielectric film (310), and a second metallic film (309), said MIM structure being able to have a resonant absorption of said incident radiation at at least one wavelength in said spectral band. The area of the microbolometer pixel covered by said membrane (301) is less than or equal to half of the total area of the microbolometer pixel.

Sub-arrays such as tiles or chips having pixel elements arranged on a routing layer or carrier to form a larger array. Through-chip vias or the like to the backside of the chip are used for connecting with the pixel elements. Edge features of the tiles may provide for physical alignment, mechanical attachment and chip-to-chip communication. Edge damage tolerance with minimal loss of function may be achieved by moving unit cell circuitry and the electrically active portions of a pixel element away from the tile edge(s) while leaving the optically active portion closer to the edge(s) if minor damage will not cause a complete failure of the pixel. The pixel elements may be thermal emitter elements for IR image projectors, thermal detector elements for microbolometers, LED-based emitters, or quantum photon detectors such as those found in visible, infrared and ultraviolet FPAs (focal plane arrays), and the like. Various architectures are disclosed.

Microbolometer infrared detector elements that may be formed and implemented by varying type / s of precursors used to form amorphous silicon-based microbolometer membrane material / s and / or by varying composition of the final amorphous silicon-based microbolometer membrane material / s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material / s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.

Radiation detecting and sensing systems using graphene and methods of making the same are provided; including a substrate, a single or multiple layers of graphene nanoribbons, first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance, increasing sensitivity to IR radiation. Absorption over a wide wavelength range (200 nm to 1 mm) is possible based on the three alternative devices structures described within. Devices can variously include (a) a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules, (b) graphene layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector, and / or (c) tuned graphene layers layered on top of each other where a p-type layer and a n-type layer is created using a combination of oxidation and doping.

A method and apparatus for correction of temperature-induced variations in the analog output characteristics of a microbolometer detector in an infrared detecting focal plane array utilizing electronic means to correct for the temperature variation of the individual microbolometer detector. The electronic circuitry and associated software necessary for implementation is also described.

The invention discloses an uncooled microbolometer, which comprises a microbolometer microbridge structure used for an uncooled detector, wherein the thermistor material and the light absorbing material in the microbridge structure are vanadium oxide-carbon nano tube composite membranes, the vanadium oxide-carbon nano tube composite membranes are formed by compounding one-dimensional carbon nano tubes and two-dimensional vanadium oxide membranes, and the microbridge structure is in a three-layer sandwich structure: the bottom layer is provided with an amorphous silicon nitride membrane which is used as the supporting and insulating material of the microbridge, the middle layer is provided with one or more layers of vanadium oxide-carbon nano tube composite membranes which are used as the heat sensitive layer and the light absorbing layer of the microbolometer; and the surface layer is provided with another layer of amorphous silicon nitride membrane which is used as the passivation layer of the heat sensitive membrane and a stress control layer. The microbolometer and the preparation method thereof can overcome the defects of the prior art, improve the working performance of devices, reduce the cost of raw materials, and are suitable for large-scale industrial production.

An apparatus for detecting radiation of a plurality of wavelengths of the electromagnetic spectrum may be provided. The apparatus includes a substrate, a laser irradiated layer proximal to a first side of the substrate, and a microbolometer and at least one readout circuit proximal to a second side of the substrate in electrical communication with the laser irradiated layer. The substrate, laser irradiated layer, and the microbolometer are disposed and arranged such that radiation of a first wavelength is substantially detected by the laser irradiated layer, and radiation of a second wavelength is substantially detected by the microbolometer.

A process and system for a medium wave infrared (MWIR) uncooled microbolometer focal plane array (FPA). One embodiment is for a single MWIR band uncooled IR detector, wherein the design and fabrication utilizes standard silicon processing techniques reducing manufacturing costs and preserving existing manufacturing capabilities. Another embodiment is a two color uncooled microbolometer IR detector providing broadband detection.

Microbolometer infrared detector elements that may be formed and implemented by varying type / s of precursors used to form amorphous silicon-based microbolometer membrane material / s and / or by varying composition of the final amorphous silicon-based microbolometer membrane material / s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material / s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.

The invention relates to a microbolometer, which comprises a microbridge structure, wherein a thermosensitive resistance material and an infrared absorption material layer in the microbridge structure are of a carbon nanometer tube-amorphous silicon composite film, the carbon nano tube-amorphous silicon composite film is formed by compounding an one-dimension carbon nano-tube and a two-dimensional amorphous silicon film, and the microbridge structure is of a three-layer sandwich structure; the most bottom layer is of a amorphous silicon nitride film which is used as a supporting and insulation material of the microbridge; the intermediate layer is of one layer or multiple layers of carbon nano-tube-amorphous composite film, the stress is opposite to the nature of the bottom layer silicon nitride film, and the carbon nano-tube-amorphous composite film is used as the thermosensitive layer and the infrared absorption layer of the microbolometer; and the surface layer is of an amorphous silicon nitride film, the stress of the amorphous silicon nitride film is opposite to the nature of the intermediate carbon nano-tube-amorphous composite film, and the amorphous silicon nitride film is used as a passivation layer of the inforared sensing film and a control layer of the stress. The microbolometer and the preparation method can overcome the weaknesses of the prior art, improves the working performance of the part, reduces the cost of the raw material and are applicable to the industrialized mass production.

A microbolometer IR FPA is provided with in-situ vacuum sensing capability by realizing that the IR sensor microbolometer pixel element itself may be used as a vacuum sensor. The application of an electrical signal to the resistive element heats the bolometer material thereby producing a variable resistance related to vacuum level. The degree of variability for a given material depends on the efficiency of heat transfer from the material to the surrounding environment. In a good vacuum, heat transfer is poor, and thus heat will be retained in the material to produce a relatively large temperature increase and the resistance variability will be large. In a poor vacuum, heat is readily transferred to the environment and the temperature rise will be relatively small and thus resistance variability will be small. Consequently, the variable resistance magnitude can be readout to determine the vacuum level.

A microbolometer sensor has a first cantilever supported above a substrate and formed of a bimaterial so as to deform in a first direction in response to incident radiation, and a second cantilever supported above the substrate and formed of a bimaterial so oriented as to cause the second cantilever to deflect oppositely to the first cantilever in response to radiation. The first and second cantilevers have a spacing therebetween that varies as a function of radiation incident on said first and second cantilevers. Means for sensing the deflection of the first and second cantilevers to provide an indication of the incident radiation is provided. A process of forming a micromechanical cantilever structure is also providing by irradiating a cantilever with an ion beam, whereby the cantilever is flattened. Also, the cantilever can be annealed in a rapid thermal annealing process to flatten the cantilever.

The embodiment of the invention discloses a readout circuit of an uncooled infrared focal plane array. The readout circuit comprises a first bias circuit producing a detection output signal, a second bias circuit producing a first reference output signal, a first integration circuit and an analog-to-digital conversion circuit. The analog-to-digital conversion circuit includes a ramp signal generator which generates a ramp signal based on the output of a second reference microbolometer in a third bias circuit. According to the readout circuit, 'difference calculation' and 'amplification' of the detection output signal and the first reference output signal are completed by an integrator in an analog domain, 'ratio solution' is completed by an analog-to-digital converter in the process of analog-to-digital conversion, and analog-to-digital conversion and infrared detection are integrated more closely. Moreover, only one reference microbolometer is adopted in a column-level integrated readout channel, only one reference microbolometer is adopted in the chip-level ramp signal generator, and the readout circuit occupies a smaller area and has a smaller number of noise sources.

A combination thermal and visual image capturing device used to capture real time thermal and visual images of surface and subsurface biological tissue, said device comprising: a power source, said power source functionally connected to said device; a housing, a long wave infrared microbolometer, said microbolometer functionally connected to said power source a digital camera; a short wave infrared microbolometer, said microbolometer functionally connected to said power source; a digital camera, said digital camera functionally connected to said power source; and a digital camera, said digital camera functionally connected to said power source, wherein said digital camera and 3D camera are contained within a USB peripheral device; said imaging apparatus further comprising means to electronically provide combined thermal image information from the microbolometers and visual image information from said digital camera and said 3D camera to another electronic device.

A method and apparatus for correction of temperature-induced variations in the analog output characteristics of a microbolometer detector in an infrared detecting focal plane array utilizing electronic means to correct for the temperature variation of the individual microbolometer detector. The electronic circuitry and associated software necessary for implementation is also described.

An infrared sensor, comprising a focal plane array (FPA) of resistance microbolometer infrared detectors connected in such a manner to produce different pixel formats to meet specific detection requirements. Typically each imaging pixel may be a mosaic comprising a number of sub-pixels connected in parallel (although other configurations are possible), resulting in enhanced performance and ease of manufacture by micro-fabrication methods. The FPA may be integrated with a readout microcircuit on the same substrate so that with appropriate signal processing one is capable of forming an image of the field of view of interest, facilitating target recognition and very low false alarm rate.