49 results about "Microbolometer" patented technology

The invention discloses a bridge type structure micro-bolometer based on a Mn-Co-Ni-O thin film and a preparation method of the bridge type structure micro-bolometer. According to the method, a Mn-Co-Ni-O post-high-temperature annealing process is considered, annealing is carried out on the suspension structure where the sacrificial layer is released, an organic sacrificial layer material release process is compatible, and the problem that cracks are generated in Mn-Co-Ni-O manufacturing due to tension and compression stress of materials of all layers of a substrate at a high temperature is minimized through annealing of the suspension structure; a bridge type structure based on Mn-Co-Ni-O is provided, and the limitation that traditional Mn-Co-Ni-O can only adopt an organic sacrificial layer and back digging to carry out thermal isolation design is eliminated; the F-P resonant cavity resonance absorption structure based on Mn-Co-Ni-O is successfully manufactured, traditional self-absorption based on a Mn-Co-Ni-O thick film is replaced, and the heat capacity of a device is reduced while absorption is enhanced by adopting a thin film optical structure; the applicable scene of the invention can be expanded to all cantilever or film-suspending micro-nano devices, such as inertial sensors, pressure sensors, chemical / biological sensors and optical detectors of other principles.

Techniques are provided for implementing leg structures for microbolometer focal plane arrays. In one example, an infrared imaging device includes a substrate having a plurality of contacts and a surface. The surface defines a plane. The infrared imaging device further includes a microbolometer array coupled to the substrate. Each microbolometer of the microbolometer array includes a bridge and a leg structure coupled to the bridge and to one of the plurality of contacts. The leg structure includes a first dielectric layer. The leg structure further includes a conductive layer disposed on the first dielectric layer. The leg structure further includes a second dielectric layer disposed on the first dielectric layer and along a sidewall of the conductive layer. A height of the conductive layer is less than a height of the second dielectric layer. Related methods and systems are also provided.

The present disclosure provides a microbolometer including a substrate, a readout circuit layer disposed above the substrate, a first vanadium oxide layer disposed above the readout circuit layer, a second vanadium oxide layer disposed on the first vanadium oxide layer, and an infrared absorbing layer disposed above the second vanadium oxide layer, in which an oxygen content of the second vanadium oxide is higher than that of the first vanadium oxide layer.

The insulation arm comprises a reinforcement made of an electrically insulating material and a metal core sandwiched in the reinforcement. The microboard is electrically connected to the readout circuit by the core. The thermal insulation arm is such that it comprises a first region and a second region inside which regions the reinforcement respectively has a first transverse surface area Sr,1 and a second transverse surface area Sr,2, and the core respectively has a first transverse surface area Sa,1 and a second transverse surface area Sa,2. The microbolometer is such that the transverse cross sections satisfy the relationship: Sa,1 / Sr,1 < 0.8(Sa,2 / Sr,2).

This invention provides a microbridge structure and its fabrication method, as well as an uncooled infrared microbolometer, belonging to the fields of microelectromechanical systems (MEMS) and infrared detection technology. The microbridge structure includes two diagonally arranged anchor posts, two supporting legs, a bridge deck, and an umbrella-shaped canopy. Each supporting leg consists of multiple alternating longitudinal segments and multiple transverse segments connected end-to-end. The longitudinal segments extend at an angle greater than 45 degrees relative to the horizontal plane, while the transverse segments extend parallel to the horizontal plane. One end of each supporting leg is connected to an anchor post, and the other end is connected to the end of the bridge deck, suspending the bridge deck. This design maintains the slender characteristics of the supporting legs to ensure low thermal conductivity and high thermal insulation performance, while significantly reducing the residual stress on the supporting legs by utilizing the high cross-sectional moment of inertia of the longitudinal segments. This improves the mechanical stability and deformation resistance of the microbridge structure, solving the problem of balancing stability and thermal performance in traditional horizontal supporting leg structures. This invention also provides a corresponding fabrication method.

The invention relates to the technical field of micro electro mechanical systems, and particularly discloses a method for improving the stability of a micro-bridge structure of a micro-bolometer, the micro-bridge structure of the micro-bolometer, the micro-bolometer and a chip. According to the method for improving the stability of the micro-bridge structure of the micro-bolometer, under the condition that the length of a bridge leg is kept unchanged, the height and the width of the bridge leg are synchronously adjusted, so that the ratio of the height to the width of the bridge leg is larger than 1: 3. The thermal conductivity efficiency is reduced by reducing the width of the bridge legs, so that the response rate of the microbolometer is improved; meanwhile, by increasing the height of the bridge legs, the mechanical strength lost due to width reduction is compensated, the dual purposes of high response rate and high mechanical stability of the microbolometer are finally achieved, and the technical bottleneck that an existing microbridge structure cannot give consideration to high response rate and stable mechanical performance at the same time is solved.

Microbolometer systems and methods are provided herein. For example, an infrared imaging device includes a microbolometer array. The microbolometer array includes a plurality of microbolometers. Each microbolometer includes a microbolometer bridge that includes a first portion and a second portion. The first portion includes a resistive layer configured to capture infrared radiation. The second portion includes a second portion having a plurality of perforations defined therein.

The microbolometer structure comprises, from bottom to top, a substrate (1), a polyhedral structure layer (2), a silica aerogel layer (3), a reflective layer (4), a protective layer (5), a heat-sensitive layer (6), an electrode (7) and a light-absorbing layer (8). The polyhedral structure layer (2) is formed by a plurality of polyhedral structures arranged in an array and is etched on the substrate (1). The silica aerogel layer (3) is deposited on the polyhedral structure layer (2) and the upper surface of the substrate (1), and the height of the silica aerogel layer (3) is greater than that of the polyhedral structure layer (2). The heat-sensitive layer (6) is deposited on a first predetermined area on the upper surface of the protective layer (5), and the area of the first predetermined area is smaller than that of the protective layer (5). The electrode (7) is deposited between the protective layer (5), the heat-sensitive layer (6) and the light-absorbing layer (8).

The application discloses a glass-packaged micro thermal conductivity detector wafer and a preparation method thereof, and belongs to the technical field of gas detection. The wafer comprises a plurality of micro thermal conductivity detectors; the plurality of micro thermal conductivity detectors are arranged on a packaging wafer; the packaging wafer is composed of a first glass wafer and a second glass wafer; a plurality of packaging plates are arranged on the first glass wafer; and a plurality of substrates are arranged on the second glass wafer; a plurality of thermal conductivity cells are arranged on the packaging plates; symmetric second half-groove channels are arranged on both sides of the thermal conductivity cells; a plurality of first half-groove channels are arranged on the substrates; the first half-groove channels and the second half-groove channels are matched to form through grooves; the packaging wafer further comprises a plurality of micro circuits; the micro circuit comprises a Wheatstone bridge and electrodes connected to both ends of the Wheatstone bridge; and pads are arranged on the top of the electrodes. The application enlarges the effective sealing area, improves the air tightness, shortens the heat dissipation path of the thermal element, effectively reduces heat loss, and improves the sensitivity of the device.

An infrared microbolometer detector (100), and a design method, manufacturing method and system thereof, comprising: a first substrate, a detector readout circuit (106), a microbolometer microelectromechanical system structure (105) and a pixel-level metasurface layer (102), the pixel-level metasurface layer (102) comprising a plurality of pixel-level metasurface minimum cells (304), the size M of the pixel-level metasurface minimum unit (304) meets the following conditions: M < lambda / 2nmeta, A is the wavelength of incident light, and nmeta is the refractive index of the pixel-level metasurface layer (102). The size of each pixel-level metasurface minimum unit (304) is smaller than the wavelength of incident light, the incident light can be finely distinguished, the distinguished incident light is converged into a specific micro-bolometer micro electro mechanical system structure (105) so that a detector reading circuit (106) can read the distinguished incident light, and finally a finer infrared image is obtained.

The application discloses a non-refrigeration infrared focal plane dual-channel column-level readout circuit and method, relates to the technical field of infrared focal plane array detector, and solves the problem of frame frequency reduction of a non-refrigeration infrared focal plane array detector under a large array. The technical scheme is as follows: the circuit comprises a mirror bridge circuit, a pixel array biasing circuit and a pixel array; the mirror bridge circuit is used for providing a bias voltage for the pixel array biasing circuit; the pixel array biasing circuit is used for providing a bias current for the pixel array; the pixel array biasing circuit comprises a first channel-level biasing circuit and a second channel-level biasing circuit; and a microbolometer gating switch is used for changing on-off timing, so that the microbolometer unit needing to be read out sequentially generates a detection output signal through the first channel-level biasing circuit or simultaneously generates a detection output signal through the first channel-level biasing circuit and the second channel-level biasing circuit, and adjustment of the readout frame frequency of the circuit is realized.

This invention provides a thermal deformation compensation device and method for the optical window of an airborne optoelectronic pod, belonging to the field of aerospace optical imaging technology. It solves the problem that there is currently no direct method to measure and correct image quality degradation caused by uneven temperature distribution in the window glass. The airborne optoelectronic pod's optical window thermal deformation compensation device is installed inside the pod and includes a forward telescope system, a microbolometer, a deformable mirror, multiple beam splitters, and multiple reflectors. The forward telescope system is located inside the pod, and the microbolometer is mounted on the forward telescope system to generate a thermal image of the pod's first optical window glass. The deformable mirror is located at the rear end of the forward telescope system. Multiple beam splitters and multiple reflectors divide the light rays passing through the deformable mirror into multiple imaging optical paths. This device can perform real-time dynamic correction of image quality changes in the optical system caused by thermal deformation.

The present disclosure relates to a microbolometer comprising an array of pixels, each pixel comprising one or more detection units, each detection unit comprising an absorption layer (530) forming a quarter-wavelength resonant cavity (533) having a height (h) between 1.5 and 5 μm, wherein the spacing of the detection units on at least one axis in the plane of the pixel array is in the range of 2.4h to 3.6h.

The present application relates to a kind of quantitative regulation method of multiphase vanadium oxide and the application of multiphase vanadium oxide, belong to laser application technical field.The purpose of the present application is to solve the problems such as low thermal sensitivity of existing temperature measuring device, miniaturization is difficult, application is limited greatly, provide a kind of quantitative regulation method of multiphase vanadium oxide and the application of multiphase vanadium oxide;The temperature measuring device is based on femtosecond laser direct writing technology processing, without mask, can flexibly realize the characteristic regulation of thermosensitive material, high-precision microstructured preparation etc..Meanwhile, the temperature measuring device has high performance (high TCR, low noise) and high response speed, has microscale thin film design (can maximize the specific surface area of device), can be applied to calorimetric ionizing radiation dosimetry, microbolometer etc. technical field.

Techniques are provided for facilitating electrostatic pull-in mitigation for microbolometer systems and methods. In one example, an infrared imaging device includes a readout circuit having a surface defining a plane. The infrared imaging device further includes a microbolometer coupled to the readout circuit. The microbolometer includes a bridge suspended above and parallel to the readout circuit's surface in a direction substantially perpendicular to the plane. The bridge includes a first bridge contact and a second bridge contact. The infrared imaging device further includes a first reflective layer readout circuit's surface and between the bridge and the readout circuit. The first bridge contact and the second bridge contact are associated with and suspended above only the first reflective layer and the second reflective layer, respectively, in the direction. Related methods and systems are also provided.

The invention provides an airborne photoelectric pod optical window thermal deformation compensation device and a compensation method thereof, and belongs to the technical field of aviation optical imaging. The problem that no direct method for measuring and correcting image quality reduction caused by uneven temperature distribution of window glass exists at present is solved. The airborne photoelectric pod optical window thermal deformation compensation device is arranged in a pod, the airborne photoelectric pod optical window thermal deformation compensation device comprises a front telescope system, a micro-bolometer, a deformable mirror, a plurality of spectroscopes and a plurality of reflectors, the front telescope system is arranged in the pod, the micro-bolometer is arranged on the front telescope system, and the deformable mirror is arranged on the front telescope system. The thermal image generator is used for generating a thermal image of first optical window glass of the pod; the deformable mirror is positioned at the rear end of the front telescope system; the light passing through the deformable mirror is divided into a plurality of imaging light paths through the plurality of spectroscopes and the plurality of reflectors. The device can dynamically correct the image quality change condition of the optical system caused by thermal deformation in real time.

The invention discloses a micro-bridge unit for micro-measuring radiant heat, an array structure of the micro-bridge unit and a manufacturing method of the micro-bridge unit. Four bridge piers of a plurality of micro-bridge units in a rectangular array are respectively arranged close to two opposite edges of a corresponding substrate in a manner that every two bridge piers form a group; the interval between the two bridge piers of each group is controlled to be the minimum value under the condition that the manufacturing process is allowed in the length direction of the corresponding edge; the two groups of piers are connected with a bridge surface arranged between the two groups of piers through two groups of bridge arms symmetrically arranged according to the center of the substrate; the two concave structures of the two first bridge arms and the irregular structures of the two second bridge arms of the two sets of bridge arms form a rectangular frame on the periphery of the bridge floor. Each concave structure is connected with the corresponding pier through a first H-shaped structure; and each irregular structure is connected with the corresponding pier through a second H-shaped structure. And during multiple constructions, multiple film layers are deposited one by one, and photoetching etching is carried out. The application of the invention can give consideration to both microbridge support stability and reasonable layout of the sensitive layer.

The application discloses a high-temperature-coefficient thermoelectric conversion structure and a micro-bolometer based on a CMOS process. The thermoelectric conversion structure comprises an N well, an N+ type doped layer, a shallow trench isolation, a metal silicide, a contact hole and a metal wire layer. The N well is annular, and the N+ type doped layer and the shallow trench isolation are arranged in the N well. The metal silicide is located on the surface of the N well, a part of which forms a Schottky contact with the N well as an anode, and another part of which forms an ohmic contact with the N+ type doped layer as a cathode, and the anode and the cathode are isolated by the shallow trench isolation. The metal silicides of the anode and the cathode are connected to the metal wire layer through the contact holes respectively. The structure has a large temperature coefficient and can significantly improve the sensitivity to temperature changes. The micro-bolometer prepared based on the thermoelectric conversion structure has high sensitivity, low noise and cost advantages, can be integrated with a readout circuit, and can realize efficient detection of infrared radiation.

The embodiment of the invention relates to the technical field of sensors, in particular to a temperature-adaptive self-heating effect compensation method and circuit, and the method comprises the steps: generating a negative temperature coefficient voltage which is used for sensing the environment temperature; converting the negative temperature coefficient voltage into a second current; and performing integration on the second current to generate compensation voltage so as to realize self-heating effect compensation. By generating the negative temperature coefficient voltage which has an approximate linear relationship with the temperature, voltage conversion, current integration and the like are further performed, and the compensation voltage which can adaptively change along with the change of the environment temperature is obtained, so that the interference of a self-heating effect is eliminated. The voltage of the micro-bolometer is controlled through the clamping NMOS, and even if the resistance value of the resistor of the micro-bolometer changes, the current can be kept stable. The complexity of the implementation process is low, readjustment is not needed when the environment temperature changes, and the compensation signal can be changed in a self-adaptive mode.

The present invention discloses a method for improving the contact between vanadium oxide and titanium electrode in a microbolometer, and the method can be used to improve the contact between vanadium oxide and titanium electrode in a microbolometer. First, the method uses ion implantation technology to use tungsten and titanium as doping elements, and the implantation area is the area in the vanadium oxide film that contacts the titanium electrode. Secondly, the selection of tungsten and titanium as implanted elements can effectively reduce the resistance of the vanadium oxide contact area, obtain excellent gold-semiconductor contact, thereby reducing the 1 / f noise of the vanadium oxide itself, and helping to obtain a low-noise device; in addition, by doping tungsten elements, the TCR of the vanadium oxide film can be increased, thereby improving the signal-to-noise ratio of the device. Third, the heat treatment method after ion implantation is pulse current rapid annealing, which can achieve lattice repair. At the same time, rapid annealing can avoid oxygen loss during the heating process, thereby reducing oxygen vacancies and preventing the resistance of the vanadium oxide from decreasing too much.

A microbolometer detector with adjustable spectral reactivity includes a reflective element between a suspended pixel body and a base section, a bimetallic arm, one end of which is connected to one end of the reflective element and the other end to the base section via the electrode connection, the temperature of which is increased by passing current, and changes the height of the reflective element by expanding with the increase in temperature.

The present disclosure relates to a microbolometer comprising an array of pixels, each pixel comprising one or more detection cells, each detection cell comprising an absorption layer (530), wherein: the pitch of the detection cells in at least one direction in the plane of pixel array is between 5 and 11 μm; a pixel fill factor FF of the absorption layer (530) of the one or more detection cells in each pixel is in a range 0.10 to 0.50; and a sheet resistance Rs of the absorption layer (530) of each detection cell is between 16 and 189 ohm / sq.

A housing assembly for housing a microbolometer within a satellite includes a container for at least partially enclosing the microbolometer, so as to exchange heat with the microbolometer, and a phase change material. The container comprises a cavity within a wall portion of the container. The cavity contains the phase change material. The disclosure further relates to a microbolometer assembly comprising the housing assembly, and to a satellite comprising the housing assembly and / or the microbolometer assembly.

Disclosed is a method for capturing images that makes it possible to correct at least partially a memory effect of sensitive elements of a matrix used to capture the images. A corrected image is formed by subtracting, from a captured new raw image, a part of a prior raw image that was captured before the new raw image. The method is particularly suitable for sensitive elements with a first-order transfer function with respect to time, such as bolometers or microbolometers. Correction of the memory effect makes it possible to improve the transfer function and / or reduce a tail effect that is present in the images when scene elements move.

The invention provides an etching line width regulation and control method and a micro-bolometer supporting leg structure preparation method, and the method comprises the steps: 100, building a three-dimensional prediction model, carrying out the photoetching on a wafer through employing n kinds of exposure energy Ei, forming n groups of photoetching patterns, and measuring the photoetching line width CDi; pre-etching each group of patterns, and measuring the pre-etching line width CD'i; then applying m kinds of regulation time Tj to carry out formal etching, and measuring the etching line width CD ''i; and constructing a three-dimensional prediction model of exposure energy-regulation time-line width based on the mapping relation of Ei, Tj, CD'i and CD ''i. Step 200, performing actual application, including pre-etching and formal etching, and performing photoetching and pre-etching on a wafer to obtain CDx and CD'x; inputting the CDx and the CD'x into a model, and outputting etching time Ty by taking the target etching line width CDT as a constraint; and performing formal etching according to Ty to obtain a final etching line width. According to the method, the line width deviation can be corrected in time, the etching line width is ensured to meet the design requirement, and product performance reduction or failure is avoided.

A thermal imaging sensor may include: a pixel array in which pixels with microbolometers are arranged in an M×N matrix, where M and N are integers greater than or equal to 2; a row controller configured to output a row control signal through one or more row control signal lines to select and control a predetermined row from among multiple rows; switches connected to the one or more row control signal lines and disposed at each pixel; and a plurality of column integrators configured to read a current signal from the pixel array obtained through a pixel output line and convert it into a voltage signal.

The utility model relates to temperature measurement technical field especially relates to a temperature measurement module and temperature measurement equipment. The utility model discloses temperature measurement module, including the main control module of built -in wireless communication module, set up with the collection module of microbolometer and thermocouple sensor, and be used for the power module of power supply for main control module and collection module. The main control module can compensate the temperature distribution information that microbolometer sensor obtains according to the ambient temperature information that thermocouple sensor obtains, to output the temperature measurement data that calibrates through ambient temperature. Make temperature measurement module not only have the temperature measurement range of wide, and ensure the high accuracy of temperature measurement, no matter under extreme environment or face the object of temperature change bigger, can provide stable, reliable temperature data, greatly promote the applicability and precision of temperature measurement.

The application discloses an antenna-coupled micro-bridge structure for a small-pixel microbolometer and a preparation method thereof, and belongs to the technical field of photoelectric detection. The spiral antenna and the electrode bridge leg are arranged alternately, the proportion of the small-pixel micro-bridge structure thermal isolation support bridge leg is improved, the bridge leg is lengthened, the thermal conductivity is reduced, and the temperature rise of the microbolometer is improved; when the spiral antenna arm is used for coupling the thermal sensitive unit to receive infrared radiation, the absorption of light energy can be more concentrated on the thermal sensitive unit, the temperature rise of the thermal sensitive unit is further improved under the condition that the total light absorption rate of the device is similar, the effective absorption area of the micro-bridge structure is equivalent to being increased, compared with the traditional microbolometer, energy can be better collected, and the detection efficiency is improved; while low thermal conductivity and high absorption rate are obtained, the thermal mass of the micro-bridge structure is reduced; the double-layer micro-bridge structure of the traditional upper absorption layer and the lower thermal isolation layer is replaced, the preparation process is simplified, and the device manufacturing cost can be reduced.

The invention provides a chip infrared spectrometer and a preparation method thereof, and the preparation method comprises the following steps: providing a readout integrated circuit wafer, and forming a plurality of miniature bolometer arrays on the readout integrated circuit wafer to obtain an infrared detector wafer; providing a second wafer, and preparing a filter array on the second wafer to obtain a filter wafer; and bonding the infrared detector wafer and the filter wafer, wherein the units of the micro bolometer array and the units of the filter array are in one-to-one correspondence on an incident light path. A chip infrared spectrometer comprises an infrared detector wafer and a filter wafer, wherein the infrared detector wafer is composed of a readout integrated circuit wafer, a conductive base and a miniature bolometer array. The surface of the filter wafer is a metasurface pattern, and a cavity is formed in the back area of the pattern; the filter wafer is bonded on the infrared detector wafer, the miniature bolometers and the filters are in one-to-one correspondence on an incident light path, and a vacuum sealing cavity is formed on the surface of the infrared detector wafer.

The invention discloses a low-thermal-conductivity micro-bolometer based on a total stress beam and a design method of the low-thermal-conductivity micro-bolometer. Each bridge comprises a bridge column connecting section and a bridge floor connecting section, the width of the bridge column connecting section changes in the y direction, the width of the bridge floor connecting section changes in the x direction, the width distribution of the bridge column connecting section changing in the y direction and the width distribution of the bridge floor connecting section changing in the x direction are optimized respectively, the thermal conductivity of the device is optimized to the maximum extent, and therefore the responsivity is increased; according to the method, the bending moment and the torque borne by the bridge are comprehensively considered, the unnecessary bridge area is reduced through theoretical analytical solution calculation, and the thermal conductivity of the bridge is greatly reduced to improve the response rate; furthermore, an algorithm for optimizing the single-layer material bridge is expanded and corrected to a double-layer composite beam structure or even a multi-layer composite beam structure, so that the design method disclosed by the invention can be used in an actual application scene.