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Uncooled microbolometer and preparation method thereof

A microbolometer and non-cooling technology, applied in the field of microbolometer and its preparation, can solve the problems of poor stability of film chemical structure, low sensitivity of pyroelectric detector, conductivity and chemical stability of vanadium oxide film Insufficient and other issues

Inactive Publication Date: 2010-11-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

However, since the electronic structure of the vanadium atom is 3d 3 4s 2 , the 4s and 3d orbitals can lose part or all of their electrons. Therefore, the vanadium oxide film prepared by the traditional method has its own insurmountable shortcomings: that is, the valence state of the V element in the vanadium oxide film is complex and the stability of the chemical structure of the film is poor. Wait
Due to the complex composition of the V element, small changes in the preparation process will have a greater impact on the chemical composition of the vanadium oxide film, resulting in significant changes in the electrical, optical, and mechanical properties of the film, which in turn affect the performance of the device.
Therefore, the main disadvantages of the microbolometer based on vanadium oxide film are: the preparation process of vanadium oxide film is difficult, the repeatability and stability of the product are poor, etc.
Chinese patent ZL 200320109976.X, authorized by Liu Junhua et al. on May 4, 2005, describes a carbon nanotube film piezoresistive thermal infrared detector. This invention also uses carbon nanotubes as infrared light absorption and thermal Sensitive materials, when the micromachine is exposed to light radiation, thermal warping or resonance frequency drift will occur, so that the piezoresistive factor of the carbon nanotubes bonded to the micromachine will change. Using the piezoresistive effect of carbon nanotubes, through The drift of the frequency of the resistance change of carbon nanotubes is used to sense the temperature distribution and then measure the radiation intensity. This invention solves the problems of low sensitivity and high cost of pyroelectric detectors
[0008] In short, the conductivity and chemical stability of vanadium oxide films are insufficient and need to be improved.
However, carbon nanotubes also have some shortcomings in terms of electrical and optical properties, so it is not suitable to use simple carbon nanotubes or ordinary carbon nanotube-polymer composite films as infrared or terahertz light absorption and Thermistor materials, directly applied in uncooled infrared detectors, or uncooled terahertz detectors

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  • Uncooled microbolometer and preparation method thereof
  • Uncooled microbolometer and preparation method thereof
  • Uncooled microbolometer and preparation method thereof

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Embodiment Construction

[0083] The present invention will be further described below in conjunction with accompanying drawing:

[0084] Ⅰ. Preparation method of one-dimensional carbon nanotube and two-dimensional vanadium oxide film composite material

[0085] The guiding ideology of the present invention is in vanadium oxide-carbon nanotube composite film structure, utilizes carbon nanotube and vanadium oxide excellent electrical and optical property separately, prepares the composite thin film (as figure 1 shown), used as thermistor material for uncooled microbolometers as well as light-absorbing materials (such as Figure 5 , 6 , 7), to improve the performance of infrared detectors or terahertz detectors. The present invention prepares vanadium oxide-carbon nanotube composite membrane embodiment as follows: 1. select silicon wafer as the substrate 1 of thin film growth, first use Piranha solution treatment and deionized water cleaning, then soak with dilute hydrofluoric acid solution , after bl...

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Abstract

The invention discloses an uncooled microbolometer, which comprises a microbolometer microbridge structure used for an uncooled detector, wherein the thermistor material and the light absorbing material in the microbridge structure are vanadium oxide-carbon nano tube composite membranes, the vanadium oxide-carbon nano tube composite membranes are formed by compounding one-dimensional carbon nano tubes and two-dimensional vanadium oxide membranes, and the microbridge structure is in a three-layer sandwich structure: the bottom layer is provided with an amorphous silicon nitride membrane which is used as the supporting and insulating material of the microbridge, the middle layer is provided with one or more layers of vanadium oxide-carbon nano tube composite membranes which are used as the heat sensitive layer and the light absorbing layer of the microbolometer; and the surface layer is provided with another layer of amorphous silicon nitride membrane which is used as the passivation layer of the heat sensitive membrane and a stress control layer. The microbolometer and the preparation method thereof can overcome the defects of the prior art, improve the working performance of devices, reduce the cost of raw materials, and are suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to the technical fields of uncooled infrared detection and uncooled terahertz detection, in particular to a microbolometer and a preparation method thereof. Background technique [0002] Infrared detectors convert invisible infrared heat radiation into detectable electrical signals to realize the observation of external affairs. Infrared detectors are divided into two categories: quantum detectors and thermal detectors. Thermal detectors, also known as uncooled infrared detectors, can work at room temperature, have the advantages of good stability, high integration, and low price, and have broad application prospects in military, commercial, and civilian fields. Uncooled infrared detectors mainly include three types: pyroelectric, thermocouple, and thermistor. Among them, the microbolometer focal plane detector based on thermistor is a kind of uncooled infrared detector that has developed very rapidly in recent years. Detectors ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/20B81B3/00B81C1/00
CPCG01J5/04G01J5/046G01J5/023G01J5/20G01J5/02
Inventor 许向东蒋亚东周东王志杨书兵杨洋吴志明何少伟
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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