3 results about "Amorphous silicon nitride" patented technology

The application provides a preparation method of silicon nitride, comprising the following steps: direct reaction: passing silane gas and ammonia gas into a reactor, controlling the temperature of the reactor to be 600-900 DEG C, and making the silane gas and the ammonia gas react to form amorphous silicon nitride; phase transformation: controlling the reactor to be heated to 1000-1300 DEG C, and passing silicon powder into the reactor, so that the amorphous silicon nitride obtained in the direct reaction step is transformed into alpha-phase silicon nitride, and the silicon powder reacts with the ammonia gas to obtain alpha-phase silicon nitride. According to the application, the silane gas and the ammonia gas are made to react at low temperature to form amorphous silicon nitride, the energy consumption and the production cost of the reaction are reduced, then the temperature is increased and the silicon powder is passed in, the amorphous silicon nitride is transformed into alpha-phase silicon nitride, and the silicon powder acts as a diluent for the nitriding reaction, so that the quality and the purity of the alpha-phase silicon nitride powder obtained finally are high.

This application provides a method for preparing silicon nitride, comprising the following steps: Intermediate generation: Silane gas and ammonia gas are introduced into a reactor, and the reactor temperature is controlled to increase. The silane gas and ammonia gas react to obtain a silicon-nitrogen intermediate; Silicon nitride generation: The reactor temperature is controlled to increase, and silicon powder is introduced into the reactor. The silicon-nitrogen intermediate decomposes to obtain amorphous silicon nitride, while the silicon powder reacts with ammonia gas to obtain amorphous silicon nitride. This application reacts silane gas and ammonia gas at a lower temperature to obtain a silicon-nitrogen intermediate, and then heats it to decompose the silicon-nitrogen intermediate to obtain silicon nitride. Simultaneously, the silicon powder reacts with ammonia gas to obtain silicon nitride. The reaction at a lower temperature greatly reduces production energy consumption, and the simultaneous reaction to obtain silicon nitride can increase the yield of silicon nitride.

The application relates to a surface strengthening treatment process of a semiconductor wafer and belongs to the technical field of wafer treatment. First, ozone water is used in cooperation with ultrasonic cleaning, organic pollutants are decomposed through the strong oxidizability of ozone, inorganic particulate matters are removed through ultrasonic cavitation effect, double purification is realized, and an inert atmosphere is constructed by using nitrogen blowing, so that an atomic-level clean substrate is provided for subsequent processes; second, vacuum laser shallow layer repair is carried out, quasi-molecular laser is used to induce lattice rearrangement, microcracks are eliminated, surface roughness and hardness are improved, and thermal stress deformation is avoided; subsequently, radio frequency plasma chemical vapor deposition technology is used to form a high-density amorphous silicon nitride barrier layer, so that the penetration of alkali metal ions is effectively blocked; finally, methane plasma treatment is carried out to introduce methylsilane, a dynamic cross-linking structure is formed, scratch self-repair is realized, the surface hardness after repair is improved, and the scratch resistance of the wafer is improved.