10 results about "Amorphous silicon nitride" patented technology

According to an embodiment of the present invention, there is provided method for preparing low-loss hydrogenated amorphous silicon nitride that is transparent in visible light comprising: a step in which a substrate is provided; a step in which a Plasma Enhanced Chemical Vapor Deposition (PECVD) which is used to insert H2 gas and SiH4 gas into a chamber is used to deposit a dielectric layer 200 onto the substrate, and gases inserted into the chamber further comprise N2 gas apart from the H2 gas and the SiH4 gas. Further, there is provided a method for preparing low-loss hydrogenated amorphous silicon oxide that is transparent in visible light further comprising O2 gas apart from the H2 gas and the SiH4 gas. Further, there is provided a method for preparing low-loss hydrogenated amorphous silicon that is transparent in visible light further comprising Ar gas apart from the H2 gas and the SiH4 gas.

The invention relates to the technical field of deposition processes, in particular to a photovoltaic cell multi-junction laminated structure deposition process which comprises the following steps: generating an amorphous silicon nitride transition layer with the thickness of 50nm on the surface of a flexible polyimide substrate through plasma enhanced chemical vapor deposition; alGaAs / GaAs gradient alloy layers are alternately grown in combination with MBE and PLD, the Al content is 0-30%, the layer thickness of each layer is 10 nm, and five levels are achieved in total; a p-type GaInP layer is grown through MOCVD (Metal Organic Chemical Vapor Deposition), the thickness is 300nm, and the SiH4 / DEZn flow ratio is dynamically adjusted through a mass flow controller to realize longitudinal doping gradient. Through technical collaboration and cross-scale regulation and control, flexible substrate pretreatment, an amorphous transition layer, a gradient buffer layer and strain compensation design are adopted, dynamic adaptation of crystal lattices and thermal expansion coefficients is achieved, in-situ spectral feedback and dynamic doping are introduced, current matching and spectral response are optimized, a nano-structure and interface atomic-scale stitching are combined, and the thermal expansion coefficient of the crystal lattices is improved. Compared with a traditional scheme, the solar cell has the advantages of high efficiency, flexibility and low cost.

The application provides a preparation method of silicon nitride, comprising the following steps: direct reaction: passing silane gas and ammonia gas into a reactor, controlling the temperature of the reactor to be 600-900 DEG C, and making the silane gas and the ammonia gas react to form amorphous silicon nitride; phase transformation: controlling the reactor to be heated to 1000-1300 DEG C, and passing silicon powder into the reactor, so that the amorphous silicon nitride obtained in the direct reaction step is transformed into alpha-phase silicon nitride, and the silicon powder reacts with the ammonia gas to obtain alpha-phase silicon nitride. According to the application, the silane gas and the ammonia gas are made to react at low temperature to form amorphous silicon nitride, the energy consumption and the production cost of the reaction are reduced, then the temperature is increased and the silicon powder is passed in, the amorphous silicon nitride is transformed into alpha-phase silicon nitride, and the silicon powder acts as a diluent for the nitriding reaction, so that the quality and the purity of the alpha-phase silicon nitride powder obtained finally are high.

This application provides a method for preparing silicon nitride, comprising the following steps: Intermediate generation: Silane gas and ammonia gas are introduced into a reactor, and the reactor temperature is controlled to increase. The silane gas and ammonia gas react to obtain a silicon-nitrogen intermediate; Silicon nitride generation: The reactor temperature is controlled to increase, and silicon powder is introduced into the reactor. The silicon-nitrogen intermediate decomposes to obtain amorphous silicon nitride, while the silicon powder reacts with ammonia gas to obtain amorphous silicon nitride. This application reacts silane gas and ammonia gas at a lower temperature to obtain a silicon-nitrogen intermediate, and then heats it to decompose the silicon-nitrogen intermediate to obtain silicon nitride. Simultaneously, the silicon powder reacts with ammonia gas to obtain silicon nitride. The reaction at a lower temperature greatly reduces production energy consumption, and the simultaneous reaction to obtain silicon nitride can increase the yield of silicon nitride.

According to an embodiment of the present invention, there is provided method for preparing low-loss hydrogenated amorphous silicon nitride that is transparent in visible light comprising: a step in which a substrate is provided; a step in which a Plasma Enhanced Chemical Vapor Deposition (PECVD) which is used to insert H2 gas and SiH4 gas into a chamber is used to deposit a dielectric layer 200 onto the substrate, and gases inserted into the chamber further comprise N2 gas apart from the H2 gas and the SiH4 gas. Further, there is provided a method for preparing low-loss hydrogenated amorphous silicon oxide that is transparent in visible light further comprising O2 gas apart from the H2 gas and the SiH4 gas. Further, there is provided a method for preparing low-loss hydrogenated amorphous silicon that is transparent in visible light further comprising Ar gas apart from the H2 gas and the SiH4 gas.

The application relates to a surface strengthening treatment process of a semiconductor wafer and belongs to the technical field of wafer treatment. First, ozone water is used in cooperation with ultrasonic cleaning, organic pollutants are decomposed through the strong oxidizability of ozone, inorganic particulate matters are removed through ultrasonic cavitation effect, double purification is realized, and an inert atmosphere is constructed by using nitrogen blowing, so that an atomic-level clean substrate is provided for subsequent processes; second, vacuum laser shallow layer repair is carried out, quasi-molecular laser is used to induce lattice rearrangement, microcracks are eliminated, surface roughness and hardness are improved, and thermal stress deformation is avoided; subsequently, radio frequency plasma chemical vapor deposition technology is used to form a high-density amorphous silicon nitride barrier layer, so that the penetration of alkali metal ions is effectively blocked; finally, methane plasma treatment is carried out to introduce methylsilane, a dynamic cross-linking structure is formed, scratch self-repair is realized, the surface hardness after repair is improved, and the scratch resistance of the wafer is improved.

The invention belongs to the technical field of preparation of silicon nitride powder, and particularly relates to submicron primary crystal alpha-phase silicon nitride powder and a preparation method thereof. The preparation method provided by the invention comprises the following steps: sequentially carrying out vacuum impurity removal and pyrolysis on a silicon imine precursor to obtain amorphous silicon nitride; sequentially crushing, granulating and calcining the amorphous silicon nitride to obtain the submicron primary crystal alpha-phase silicon nitride powder, in the process of raising the temperature to the final temperature of calcination, the room temperature is raised to 1100 DEG C, and then the temperature is raised to the final temperature of calcination from 1100 DEG C; the heating rate of heating from 1100 DEG C to the final calcination temperature is less than 10 DEG C / min. The submicron primary crystal alpha-phase silicon nitride powder prepared by the preparation method provided by the invention is small in primary crystal grain size, high in alpha crystal phase, low in impurity content, low in oxygen content and high in sintering activity.

According to an embodiment of the present invention, there is provided method for preparing low-loss hydrogenated amorphous silicon nitride that is transparent in visible light comprising: a step in which a substrate is provided; a step in which a Plasma Enhanced Chemical Vapor Deposition (PECVD) which is used to insert H2 gas and SiH4 gas into a chamber is used to deposit a dielectric layer 200 onto the substrate, and gases inserted into the chamber further comprise N2 gas apart from the H2 gas and the SiH4 gas.Further, there is provided a method for preparing low-loss hydrogenated amorphous silicon oxide that is transparent in visible light further comprising O2 gas apart from the H2 gas and the SiH4 gas.Further, there is provided a method for preparing low-loss hydrogenated amorphous silicon that is transparent in visible light further comprising Ar gas apart from the H2 gas and the SiH4 gas.

The invention provides a purification pyrolysis device and a purification pyrolysis method. The purification pyrolysis device comprises a hot trap which comprises a hot trap body and a heating sleeve, a first cavity is formed in the hot trap body, and the hot trap body is provided with a gas inlet, a feeding port and a first gas outlet which are communicated with the first cavity; the heating sleeve is sleeved outside the hot trap body and is used for heating the hot trap body; the transition well is internally provided with a through second cavity, and the first end of the second cavity is in sealed communication with the first air outlet; the cold trap comprises a cold trap body and a cooling sleeve, a third cavity is formed in the cold trap body, and the third cavity is in sealed communication with the second end of the second cavity; and the cooling sleeve is sleeved outside the cold trap body and is used for cooling the cold trap body. According to the purification and pyrolysis device, the mixed powder containing the silicon-nitrogen-hydrogen powder and the ammonium chloride powder is purified and pyrolyzed, high-purity amorphous silicon nitride is obtained in the first cavity of the hot trap, and high-purity ammonium chloride is obtained in the third cavity of the cold trap.

The invention discloses a cutter nitride coating preparation method based on multi-physical field combination. The cutter nitride coating preparation method comprises the following steps: step 1, preparing components of a cutter nitride coating material according to parts by weight; 2, matrix pretreatment; step 3, multi-physical field collaborative deposition; 4, post-treatment annealing is conducted; through the synergistic effect of multiple physical fields, quasi-lattice matching embedding of nano YSZ, F-CNTs and rare earth nitride in a TiAlN matrix is achieved, and the high-temperature stability and thermal shock resistance of the coating are improved through a nano YSZ phase; the binding force between the F-CNTs and a matrix and other components is enhanced by using amino functional groups, and meanwhile, the toughness and thermal conductivity of the coating are improved; the nanometer (Ce0. 7Tb0. 3) N complex-phase rare earth compound optimizes the oxidation resistance of the coating and inhibits the growth of the oxide layer at high temperature; the amorphous silicon nitride network serves as a capping layer and a filling phase, a grain boundary diffusion channel is blocked, and the compactness of the coating is improved; and a'hardness-toughness-conductivity-resistance 'multiphase synergistic bionic laminated structure is formed.