Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for improving luminous efficiency of oxygen silicon base doped nitride thin-film electroluminescent device

A technology of electroluminescent devices and luminous efficiency, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problem of low working current density, achieve the goal of improving the intensity and efficiency of electroluminescence, low turn-on voltage, and enhancing injection efficiency Effect

Inactive Publication Date: 2008-02-27
NANJING UNIV
View PDF1 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The light-emitting device can see the strong yellow-green light emitted by the naked eye under weak light at room temperature, and its working current density is low, only 110-130mA / cm 2 , even far less than the turn-on current density of light-emitting devices that simply use a-SiNx as the active layer in the world ([6] R.Huang, K.J.Chen, et.al. Appl.Phys.Lett.90 093515(2007))

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving luminous efficiency of oxygen silicon base doped nitride thin-film electroluminescent device
  • Method for improving luminous efficiency of oxygen silicon base doped nitride thin-film electroluminescent device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] 1. Preparation of active layer of new silicon-based light-emitting devices

[0029] (1) Growth of silicon-rich amorphous silicon nitride (a-SiNx) thin films at room temperature

[0030] Using plasma enhanced chemical vapor deposition (PECVD) technology, using silane (SiH 4 ) and ammonia (NH 3) as a reactive gas source to deposit a silicon-rich a-SiNx film on an ITO glass substrate. Concrete process conditions during preparation are as follows:

[0031] Power source frequency: 13.56MHz

[0032] Power density: 0.6W / cm 2

[0033] Reaction chamber pressure: 80Pa

[0034] Substrate temperature: 25°C

[0035] When depositing a-SiNx film, by SiH 4 +NH 3 Formed by glow decomposition reaction, where SiH 4 The flow rate is 8sccm (standard cubic centimeters per minute), NH 3 Flow rate is 8sccm, SiH 4 with NH 3 The flow ratio is 1:1, the deposition time is 130s, and the film thickness is 80nm.

[0036] (2) Oxygen plasma source oxidizes silicon-rich amorphous silicon n...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Power densityaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

Method for promoting the efficiency of luminescence of electroluminescence device made of oxygen-doped silicon-rich nitride thin-film. Te procedures are: (1), growth, under room temperature, of silicon-rich amorphous silicon nitride film (a-SiNx), using SiH4 and NH3 (with flow rode ratio of 0.5-1) as gas by plasma vapour phase reaction source, deposition of a-SiNx film onto ITO glass substrate with its thickness of 60-100nm; (2), at the temperature of the substrate being of 95-105deg.C, by using PECVD technique, oxygen plasma resource oxidizing above-mentioned a-SiNx film for 10-30 min, to produce this inventive silicon-rich oxygen-doped a-SiNx film, used for layer of electroluminescence device.

Description

1. Technical field [0001] The invention relates to a photoluminescent device and a preparation method, in particular to a method for improving the luminous efficiency of an oxygen-doped silicon nitride thin film electroluminescent device. 2. Background technology [0002] The integration of nanoelectronics and optoelectronics based on semiconductor silicon-based materials is the core of the new generation of semiconductor devices in the 21st century and the hardware foundation of modern information technology. Whether four-Si monolithic optoelectronic integration can be realized is a major research topic in the field of material science and microelectronics, and it is also the international research frontier of this discipline, which has important foundation and application significance. [0003] In the past ten years, among the many methods for preparing silicon-based light-emitting devices, they can be attributed to three main approaches, (1) light-emitting devices with po...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/00
Inventor 黄锐陈坤基董恒平王旦清李伟徐骏马忠元徐岭黄信凡
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com