A preparation method of a high-efficiency N-type double-sided battery with double-sided tunneling oxidation passivation

A technology of tunnel oxidation and double-sided cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high equipment cost, poor repeatability, and unsatisfactory cell preparation methods, and achieves solutions to thickness non-uniformity and improvement. The effect of A-grade yield, excellent passivation effect

Inactive Publication Date: 2019-01-15
SHANGHAI SHENZHOU NEW ENERGY DEV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Selective emitter junction solar cells effectively solve this pair of contradictions, but the cost of existing equipment is high, or the repeatability is poor, and the cell preparation methods are not very ideal

Method used

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  • A preparation method of a high-efficiency N-type double-sided battery with double-sided tunneling oxidation passivation

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Effect test

Embodiment 1

[0040] A method for preparing a high-efficiency N-type double-sided battery with double-sided tunneling oxidation passivation, using the following steps:

[0041] (1) Remove the damaged layer and texture the silicon wafer in the alkali texture tank to form a pyramid texture with a height of 3 μm;

[0042] (2) Control the temperature of the boron source high-temperature diffusion furnace tube: 950°C, diffuse for 40 minutes, and form B-doped p on the surface of the silicon wafer + launch junction;

[0043] (3) HF solution to remove the borosilicate glass (BSG) layer, use HNO 3 Wet etching process of mixed solution such as / HF to remove the B-doped p on the back of the battery + Junction, and polish the back of the battery;

[0044] (4) Prepare ultra-thin tunnel oxide layer SiO on the back of the cell by wet chemical or high temperature thermal oxidation process 2 , thickness 1.8nm, based on PECVD method with high-purity SiH 4 After preparing the gas source at 500°C, after h...

Embodiment 2

[0053] A method for preparing a high-efficiency N-type double-sided battery with double-sided tunneling oxidation passivation, using the following steps:

[0054] (1) Remove the damaged layer and texture the silicon wafer in the alkali texture tank to form a pyramid texture with a height of 1 μm;

[0055] (2) Control the temperature of the boron source high-temperature diffusion furnace tube to 850°C, place the silicon wafer in it for 80 minutes to diffuse, and form B-doped p on the surface of the silicon wafer. + launch junction;

[0056] (3) Remove the borosilicate glass (BSG) layer of the silicon wafer with HF solution, and then use HNO 3 Wet etching process of / HF mixed solution to remove the B-doped p on the back + knot and polish the backside;

[0057] (4) Preparation of ultra-thin tunnel oxide layer SiO on the back of silicon wafer by wet chemical process 2 , the temperature is controlled at 50°C, the solution used is a pure nitric acid solution with a concentration...

Embodiment 3

[0064] A method for preparing a high-efficiency N-type double-sided battery with double-sided tunneling oxidation passivation, using the following steps:

[0065] (1) Remove the damaged layer and texture the silicon wafer in the alkali texture tank to form a pyramid texture with a height of 2 μm;

[0066] (2) Control the temperature of the boron source high-temperature diffusion furnace tube to 900 ° C, place the silicon wafer in it for 50 minutes to diffuse, and form B-doped p on the surface of the silicon wafer. + launch junction;

[0067] (3) Remove the borosilicate glass (BSG) layer of the silicon wafer with HF solution, and then use HNO 3 Wet etching process of / HF mixed solution to remove the B-doped p on the back + knot and polish the backside;

[0068] (4) Preparation of ultra-thin tunnel oxide layer SiO on the back of silicon wafer by wet chemical process 2 , the temperature is controlled at 120°C, the solution used is a pure nitric acid solution with a concentrat...

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Abstract

The invention relates to a preparation method of a double-sided tunneling oxidation passivation high-efficient N-type double-sided battery, which comprises the following steps: cutting silicon wafer to remove damage layer for velveting; doping high-temperature vapor phase boron source to form p + emitting junction; growing ultra-thin tunnel oxide layer SiO2 and P-doped polycrystalline silicon layer on the back of the silicon wafer; Frontal tunneling oxidation passivation structure is formed on the p + emitting junction surface by thermal oxidation and polycrystalline deposition. A local heavily dope region is formed on that back side of the silicon wafer by laser doping or wet patterning etch method, and a hydride amorphous silicon nitride passivation antireflection layer is deposited on the front side/back side of the battery. At last, that front and back electrode metallize ohmic contact is formed by screen printing electrode grid line. A metal on that back of the battery is minimizeby the invention. Semiconductor surface recombination can obtain Voc enhancement of about 35mV, and the technology route is compatible with the existing traditional single crystal battery preparationprocess to improve the battery efficiency.

Description

technical field [0001] The invention relates to a method for preparing a solar cell, in particular to a method for preparing a high-efficiency N-type double-sided cell with double-sided tunneling oxidation passivation. Background technique [0002] With the development of the solar photovoltaic market, people's demand for high-efficiency crystalline silicon cells is becoming more and more urgent. Compared with P-type crystalline silicon cells, N-type crystalline silicon cells have a larger diffusion length for minority carriers in N-type crystalline silicon because N-type crystalline silicon is not sensitive to metal impurities, or has good tolerance. . In addition, since N-type crystalline silicon is doped with phosphorus, there is no formation of B-O complexes caused by light, so there is no light-induced degradation phenomenon in P-type crystalline silicon cells. N-type crystalline silicon cells have gradually become the focus of many research institutions and photovolt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/02168H01L31/0684H01L31/182Y02E10/546Y02P70/50
Inventor 汪建强吴天明刘慎思郑飞陶智华张忠卫阮忠立
Owner SHANGHAI SHENZHOU NEW ENERGY DEV
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