32results about How to "Improve FF" patented technology

In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiO_x layer is inserted to obtain an optical confinement effect, the silicon-based thin-film photoelectric converter according to the present invention includes an i-type photoelectric conversion layer of hydrogenated amorphous silicon or an alloy thereof, an i-type buffer layer made of hydrogenated amorphous silicon, and an n-type Si_1-xO_x layer (x is 0.25-0.6) stacked successively, wherein the buffer layer has a higher hydrogen concentration at its interface with and as compared with the photoelectric conversion layer and has a thickness of at least 5 nm and at most 50 nm. Accordingly, generation of silicon crystal phase parts and reduction of resistivity are promoted in the n-type Si_1-xO_x layer, contact resistance at the interface is reduced, and FF of the photoelectric converter is improved, so that the photoelectric converter achieves improved properties.

The invention discloses an N-type fragmented solar cell structure and a manufacturing method thereof. The manufacturing method comprises: providing an n-type solar cell substrate, and processing at least one side surface of the substrate to form a cutting groove for cracking; at least forming a continuous passivation layer on the surface of one side of the substrate, and enabling the grooving wallof the grooving to be covered by the passivation layer; splitting the substrate along the cutting groove to form a fragmented battery, and forming a natural oxide layer on the quasi-neutral region, which is not covered by the passivation layer, of the edge of the fragmented battery; and passivating the quasi-neutral region, which is not covered by the passivation layer, of the edge of the fragmented battery and the natural oxide layer by using hydrogen plasma. According to the invention, the first passivation structure and the second passivation structure are formed on the edge of the fragmented cell after slicing, the first passivation structure covers the exposed space charge region, and the second passivation structure covers the quasi-neutral region, so that the fragmented cell with the edge full-area passivation structure is obtained.

The invention relates to a manufacturing method of an N-type TOPCon solar cell. The manufacturing method comprises the following steps: a, double-sided texturing; b, single-sided spin coating; c, single-sided oxidation: forming a boron-containing silicon oxide layer on a spin coating surface; d, forming a heavily doped region substrate and a lightly doped region substrate: forming an organic masklayer for protecting a heavily doped region at a position corresponding to the metal gate line by using a mask mode, completely removing the boron-containing silicon oxide layer and the boron source outside the coverage area of the organic mask layer by using HF, and then removing the organic mask layer; and e, heavy doping and light doping: specifically, completely pushing the spin-coated boron source into the silicon substrate through a tubular low-pressure diffusion method, forming a heavy doping region is formed, carrying out whole-surface source-through deposition to form a lightly dopedregion, and finally, carrying out high-temperature oxidation to form a BSG layer with the thickness of 80-100nm, and then carrying out normal subsequent processes. According to the invention, a boronselective emitter can obtain higher photoelectric conversion efficiency, so that the conversion efficiency of the solar cell is improved.

The invention relates to a nano silicon window layer with the gradient band gap characteristic, which is formed by depositing on the surface of a sample to be processed, wherein the surface of the sample to be processed is sequentially stacked with a metal back electrode M, a transparent conductive back electrode T1, an n-type Si-based thin film N and an intrinsic Si-based thin film I. The nano silicon window layer is formed by sequentially stacking a silicon thin film P1, a silicon thin film P2 and a silicon thin film P3. A preparation method of the nano silicon window layer comprises the following steps: depositing the p-type silicon thin film P1 with small thickness under a low glow power; then gradually raising the power and depositing the thin film P2; and finally, and completing the window layer P3 under a high power. The nano silicon window layer has the advantages that when the nano silicon window layer is applied to the window layer of an n-i-p-type silicon-based thin film solar cell, high electric conductance and wide band gap can be acquired, the bombardment of a solar cell i/p interface can be effectively reduced, the band gap matching between an intrinsic layer and the window layer can be implemented and the filling factor, the open-circuit voltage and the spectral response of the solar cell are obviously improved, so that the silicon-based thin film solar cell with high photoelectric conversion efficiency is obtained.

The invention discloses a texturing and cleaning method for a heterojunction solar cell. The texturing and cleaning method sequentially comprises the following steps: pre-cleaning a silicon wafer, roughly polishing and texturing the silicon wafer, carrying out texturing surface smoothing treatment, carrying out alkali cleaning, carrying out acid cleaning, and carrying out DHF cleaning and drying.According to the cleaning method, after alkali cleaning is adjusted to smoothing treatment, due to the fact that acid cleaning is adopted for smoothing treatment, alkali cleaning is added after acid cleaning, residual acid cleaning liquid before cleaning can be neutralized, and marks formed before cleaning can be removed in a slight corrosion mode. Through the optimized texturing process, the optimal cleaning effect can be achieved, an EL reject ratio is effectively reduced, and the Voc and FF of the heterojunction cell are improved.

The invention discloses a solar cell module and interconnecting strips thereof. The solar cell module comprises a plurality of crystalline silicon solar cell pieces, the solar call piece is provided with a main grid line, the main grid line is provided with a conductive film, the interconnecting strips are bonded on the conductive film, the interconnecting strips are made of conductive metal, the volume resistivity of the interconnecting strip is smaller than or equal to 1.9ohm*square millimeter/m, the interconnecting strip has the yield strength of smaller than or equal to 90MPa, and the tensile strength of more than or equal to 130MPa, and the coefficient of elongation of the interconnecting strip is more than or equal to 15%. According to the solar cell module and the interconnecting strips thereof, the fragmentation of the cell piece is effectively reduced, the volume resistivity of the interconnecting strip is lowered, the serially connected resistors of the cell and the module are reduced, the filling factor FF of the module is improved, the width of the interconnecting strip is reduced, and the light receiving area of the cell is increased.

The invention discloses graphene solar HJT cell front silver paste and a preparation method thereof. The front silver paste is prepared from the following raw materials in percentage by weight: 5-20% of nano silver powder, 70-90% of flake silver powder, 2-10% of an organic carrier, 0.1-5% of an organic auxiliary agent and 0.1-1% of graphene. The front silver paste has the beneficial effects that (1) the nano silver powder with a specific size and the flake silver powder are mixed for use, and the graphene is added, so that the morphology of a silver network is improved, the densification is increased, and the resistivity during low-temperature curing is reduced; (2) on the basis of not changing the thixotropy of the front silver paste, the nano silver powder and the graphene are modified to increase the dispersity of substances, so that the stability of the silver paste is improved; and meanwhile, through surface modification, the printability of the silver paste is improved, the heterojunction quality of a solar cell is improved, and the photoelectric conversion efficiency is improved.

The invention relates to a full-back-contact high-efficiency crystalline silicon cell metal graphical making method. First, back high-temperature boron diffusion is carried out on a full-back-contact crystalline silicon cell to form an emitter junction, back phosphorus diffusion is carried out to form a back surface field, front phosphorus diffusion is carried out to form a front surface field, and front/back passivation anti-reflection layer deposition treatment is carried out. Then, an electrode pattern and metallization process is carried out to complete full-back-contact high-efficiency crystalline silicon cell metal graphical making. Compared with the prior art, there is no need for expensive lithography equipment, PVD equipment, sputtering equipment or other large metal deposition equipment in the subsequent metallization process, the method is compatible with conventional production screen printing equipment, and the preparation cost of full-back-contact crystalline silicon cells is reduced significantly.

The invention relates to the field of solar cell production. The invention discloses a method for preparing a solar cell diffusion deep junction. The method comprises the following steps of: 1, preparing a SiO2 layer; 2, preparing a constant impurity phosphorus source on the surface of the silicon wafer through twice deposition; 3, pushing phosphorus atoms into the silicon wafer to form a PN junction; 4, carrying out supplementary diffusion; 5, preparing a rear oxide layer; and 6, depositing an impurity phosphorus source on the surface of the silicon wafer again. The antireflection suede is prepared before the first step. The method has the beneficial effects that under the condition of not changing the overall sheet resistance and the process time, the PN junction depth and the junction region phosphorus concentration difference are effectively increased, and the Uoc and the FF of the battery piece are improved, so that the battery conversion efficiency is improved.

The invention discloses a silver paste combination for secondary printing of a crystalline silicon solar cell. The silver paste combination comprises third positive silver paste and fourth positive silver paste, wherein the third positive silver paste is mainly prepared from silver powder I, an organic carrier I and glass powder I; the fourth positive silver paste is mainly prepared from silver powder II, an organic carrier II and glass powder II; Tg of the glass powder I is 200-350 DEG C; and the Tg of the glass powder is 500-700 DEG C. The silver paste combination for secondary printing of the crystalline silicon solar cell comprises special third positive silver paste and special fourth positive silver paste. The contact resistance of the cell can be reduced; and the leakage current Irev1 and Irev2 can be reduced, so that FF is improved and the photoconversion efficiency Eff of the cell is improved.

The invention discloses application of a p-type D-A copolymer containing a quinoxaline unit in an efficient organic and perovskite solar cell. The structure of the copolymer is a quinoxaline conjugated polymer as shown in a formula I or a formula II. Different types of side chains are introduced to a quinoxaline structure, so that the planarity of polymer molecules is changed, the electron energy level of a material is adjusted, and meanwhile, molecular accumulation after polymer film formation is changed, which is beneficial to solution processing in a solar cell preparation process; Therefore, the mobility of the donor-acceptor blended film is improved, a contribution is made to the improvement of short-circuit current (Jsc), meanwhile, the fill factor (FF) of the blended material in a photovoltaic device is also improved, and the solubility, the energy level and the ultraviolet-visible spectrum absorption of the polymer can be further adjusted so as to obtain better photoelectric conversion efficiency.

The invention discloses a photovoltaic cell and a preparation method thereof, and the preparation method of the photovoltaic cell comprises a diffusion junction preparation step, a laser scribing step, a grooving step, an impurity glass removal step, a front and back passivation step, an electrode forming step and a splitting step. When the fragmented battery is obtained, the edge junction region, corresponding to the pn junction, at the fragmentation position of the fragmented battery is covered by the first passivation layer and is not directly exposed to the external environment, so that the edge recombination of the fragmented battery can be effectively inhibited, and the FF, VOC, JSC and efficiency of the fragmented battery are further improved.