156results about How to "Increase short circuit current density" patented technology

The invention relates to an integrated solar battery based on a perovskite solar battery and a bulk heterojunction solar battery and a preparation method thereof. The integrated solar battery comprises a transparent electrode, a hole transport layer, a perovskite light absorbing layer, an organic substance blending layer, a random hole block layer and a metal electrode in sequence from the bottom to top. Through preparing the perovskite solar battery and the bulk heterojunction solar battery into the integrated battery, the integrated solar battery based on the perovskite solar battery and the bulk heterojunction solar battery overcomes the disadvantages of narrow light absorbing range of the perovskite solar battery and weak visible light region absorption of the narrow-gap bulk heterojunction solar battery, improves the sunlight use range and improves the energy conversion efficiency. The integrated battery has the similar features to a parallel battery, the conversion efficiency is capable of breaking through the theoretical boundary of the energy conversion efficiency of the single-junction solar battery, and the application prospect is good.

A photovoltaic device is formed by depositing at least a first transparent electrode, PIN-structured or NIP-structured microcrystalline silicon layers, a second transparent electrode, and a back electrode in sequence on an electrically insulating transparent substrate. The PIN-structured or NIP-structured microcrystalline silicon layers include a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer. At least one of the first transparent electrode and the second transparent electrode is a ZnO layer doped with Ga, and the Ga concentration is 15 atomic percent or less with respect to Zn.

Provided is a back reflection electrode with a periodic structure. The back reflection electrode with the periodic structure comprises a substrate layer, first layer metal film which plays a role of a template, and second layer metal film which plays a role in decoration, wherein the two layers of metal film are metal Ag film or metal Al film or metal Mo film, and the back reflection electrode with the periodic structure is formed and has the function of broadband-spectrum scattering. A manufacturing method of the back reflection electrode with the periodic structure comprises the steps that PS microspheres are assembled through the water bath method, plasma etching is carried out on the PS microspheres through O2, the template effect of the etched polystyrene microspheres is used for obtaining the back reflection electrode with the periodic structure and the function of broadband-spectrum scattering, and the back reflection electrode with the periodic structure serves as a back reflection electrode of a thin film solar cell. The back reflection electrode with the periodic structure and the manufacturing method of the back reflection electrode with the periodic structure have the advantages that due to the fact that the template effect of the polystyrene microspheres and the mode that magnetron sputtering or evaporation is carried out on the metal film are used, manufacturing of the high-scattering back reflection electrode with the periodic structure is achieved, and when the back reflection electrode with the periodic structure is applied to the thin film solar cell, the short-circuit current density and conversion efficiency of the thin film solar cell are improved.

The invention discloses a novel composite structure full back-side heterojunction solar cell and a preparation method thereof. The solar cell comprises an N-type silicon substrate, a silicon nitride film, an aluminum oxide film, intrinsic polycrystalline silicon, P-type polycrystalline silicon, and N-type polycrystalline silicon. The front surface of the N-type silicon substrate is coated with thealuminum oxide film. The aluminum oxide film is coated with the silicon nitride film. The intrinsic polycrystalline silicon, the P-type polycrystalline silicon, and the N-type polycrystalline siliconare deposited on the back surface of the N-type silicon substrate. The polycrystalline silicon layers are deposited by using horizontally placed silicon wafer LPCVD or horizontally placed silicon wafer PECVD, a homojunction layer can reduce an interface defect state and reduce interface recombination. A laser doping technology is used to realize the P-type polycrystalline silicon layer doping, ensure the service lives of minority carriers of the silicon substrate to the utmost extent and reduce the recombination current density of the contact of metal and silicon. In addition, the cell piecesof the cell with IBC structure fully utilize a solar spectrum to increase the short-circuit current density of the cell to the utmost extent.

The invention provides a method for preparing a silicon heterojunction solar cell containing a composite emission layer. The method includes the steps that an amorphous silicon back field N is deposited on one face of a substrate C on which a double-faced intrinsic amorphous silicon passivation layer I is deposited, an amorphous silicon layer P2 with the uniform structure is prepared on the face opposite to the amorphous silicon back field N under the conditions that doping concentration, hydrogen dilution and power density are low, a nanocrystalline silicon layer P1 with the uniform structure is prepared under the conditions that the doping concentration, the hydrogen dilution and the power density are improved, and an amorphous silicon / nanocrystalline silicon composite structure formed by the two silicon films serves as the emission layer of the silicon heterojunction solar cell. Materials have the advantages of being high in transmittance and conductivity through the structure, on the basis, the passivation effect of the surface of crystalline silicon can be improved, short wave response and output characteristics of the cell are improved, and the method for preparing the silicon heterojunction solar cell is simple and easy to carry out.

The invention discloses an efficient and stable perovskite solar battery, which is formed by transparent conductive glass, an electron transfer layer, a mesoporous layer, a perovskite layer, a hole transfer layer and a back electrode which are laminated in sequence. During preparation of the perovskite layer, a certain quantity of terephthalic acid (TPA) additives are added to a precursor liquid of a traditional organic and inorganic metal halide perovskite, so that growth kinetics of a perovskite crystal changes, an obtained perovskite crystal boundary is filled up, and thus joined large-sized perovskite crystal particles are formed. According to the perovskite solar battery prepared by the method, compared with an additive-free perovskite solar battery, annihilation of photoproduction excitons at the crystal boundary is reduced, so that the photoelectric conversion efficiency is obviously increased. In addition, the perovskite crystal boundary is reduced, moisture, oxygen and the like are difficult to enter from the crystal boundary to corrode the perovskite layer, thereby enabling the stability of the whole battery to be obviously better.

The invention discloses an HIT solar energy battery and a method for improving the short-circuit current density of the HIT battery. The HIT solar energy battery comprises a substrate layer, a first intrinsic layer and a second intrinsic layer which are arranged on the two sides of the substrate layer, an N-shaped doping layer arranged on the first intrinsic layer on the lighted side of the substrate layer and a P-shaped doping layer arranged on the second intrinsic layer on the backlight side of the substrate layer, a front electrode is arranged on the N-shaped doping layer, and a back electrode is arranged on the P-shaped doping layer. According to the HIT solar energy battery and the method for improving the short-circuit current density of the HIT battery, the N-shaped doping layer serves as a window layer of an lighted face, and the problem that high-performance P-shaped materials are not easy to prepare when serving as the window layer is avoided; the N-shaped doping layer serves as the window layer, the preparation is convenient, the conductivity is 1-10 <-5>s / cm, the band gap is larger than 1.8eV, and therefore the short-circuit current density of the battery is improved.

The invention discloses a preparation method of a back-contact heterojunction solar cell. A pre-passivation layer of intrinsic amorphous silicon, an N-type amorphous silicon layer and an anti-reflection layer are sequentially deposited on the front side of the washed and dedamaged layer and the velveted monocrystalline silicon substrate; Depositing an intrinsic amorphous silicon back passivation layer on the back surface of the battery; The P-type amorphous silicon layer is deposited on the surface of the back passivation layer by a mask method, and then the insulation isolation layer betweenthe P-type amorphous silicon layer and the N-type amorphous silicon layer is directly deposited, and the insulation isolation layer is etched according to the preset width of the insulation isolationlayer by a photolithography method; Further depositing an N-type amorphous silicon layer on the back surface by a mask method; At last, that transparent conductive film is sequentially deposite by adopting a mask proces, and the metal film forms a contact layer, thereby completing the preparation of the solar cell of the invention. The invention improves the preparation process precision of the back surface structure pattern of the HBC single crystal silicon solar cell, reduces the width of the isolation layer, and improves the collection probability of the photogenerated carriers and the short-circuit current density of the HBC solar cell.

The invention belongs to the technical field of solar cells, provides a perovskite / silicon laminated solar cell and a preparation method thereof, and aims to solve the problems that synchronous passivation of multiple types of defects cannot be realized by perovskite material interface passivation in the prior art, the suppression efficiency of carrier interface recombination is low and the like. An organic ionic modifier passivation layer is introduced between a perovskite light absorption layer and a hole transport layer of the perovskite / silicon laminated cell, so that synchronous and efficient passivation of multiple types of defects of an interface is realized, and the defect state density is remarkably reduced; and meanwhile, lattice mismatch at the interface is effectively prevented, and the defect passivation effect is further optimized. In conclusion, the perovskite / silicon laminated solar cell has lower defect state density and higher short-circuit current density and open-circuit voltage, and the overall performance of the perovskite / silicon laminated solar cell is remarkably improved; and moreover, the organic ionic modifier passivation layer is mature in synthesis process and low in price, and has the advantages of high efficiency, stability and low cost.

The invention discloses a fluorine-substituted organic micro-molecular hole-transport material and an application thereof. The material provided by the invention has a simple molecular structure, wherein benzodithiophene and derivatives thereof are used as a central core; different heterocycle-containing units are introduced to capping groups; and the central core and the capping groups are linkedby different fluorine-substituted phenyl groups. The material provided by the invention has the advantages of simple synthesis steps, easiness in purification, good solubility in an organic solvent,proper molecular energy levels, high hole mobility and electrical conductivity, and good hydrophobicity, is applied to perovskite solar cells with good stability and high short-circuit current densityand energy conversion efficiency, and has extensive application prospects.

The invention relates to synthesis of zigzag type medium wide-band-gap small molecule photovoltaic materials based on thienobenzopyran and application of the zigzag type medium wide-band-gap small molecule photovoltaic materials in small molecule photovoltaic devices. An electron donor (D) unit of each medium wide-band-gap small molecule material is a thienobenzopyran derivative, a center acceptor(A) unit is 5,6-bis(benzothiadiazole), and a terminal group acceptor (A1) unit is rhodanine, indandione and derivatives of the indandione. The thienobenzopyran derivative, 5,6-bis(benzothiadiazole),rhodanine, indandione and the derivatives of the indandione can be widely used as donor materials in high-efficiency solution-processed small molecule solar cells. When the acceptor material of the device is fullerene (PC71BM), the maximum energy conversion efficiency and the open circuit voltage of the bulk heterojunction small molecule solar cells are respectively up to 7.55 percent and 0.9V. According to the invention, high efficiency energy conversion of the medium wide-band-gap small molecule photovoltaic materials in the small molecule solar cells is realized.

The invention discloses a silicon-based heterojunction solar cell. The silicon-based heterojunction solar cell comprises a crystalline silicon substrate; a first intrinsic amorphous silicon layer, a first doping layer, a first TCO layer and a first metal electrode are sequentially arranged on the upper surface of the crystalline silicon substrate; a second intrinsic amorphous silicon layer, a second doping layer, a second TCO layer and a second metal electrode are sequentially arranged on the lower surface of the crystalline silicon substrate. The preparation method comprises the following steps: (1), obtaining a crystalline silicon substrate; (2), carrying out plasma chemical vapor deposition on a first intrinsic amorphous silicon layer, a second intrinsic amorphous silicon layer, a firstdoping layer and a second doping layer ; (4), depositing a first TCO layer and a second TCO layer, and performing plasma treatment at the same time; and (5), forming a first metal electrode and a second metal electrode through silk-screen printing. The method is rapid, practical and easy to implement, the functional interface contact of TCO and doped amorphous silicon can be optimized, and the conversion efficiency of the heterojunction solar cell is remarkably improved.

The invention discloses a novel N-type silicon hetero-junction battery with an IBC structure, wherein an Al2O3 thin film covers the front surface of an N-type silicon substrate; a Si3N4 thin film covers the Al2O3 thin film; intrinsic amorphous silicon and P-type amorphous silicon are deposited on the back surface of the N-type silicon substrate and are provided with a trench respectively; an N-type heavily doped region is arranged at the bottom of each trench; a negative electrode is arranged in each trench; and a positive electrode of the battery is arranged on the back surface of the P-type amorphous silicon. The invention also discloses a fabrication method of the battery. In the invention, since the amorphous silicon is deposited by laser doping and PECVD (plasma enhanced chemical vapor deposition), a high-temperature diffusion process does not occur in the entire process, thereby maximally keeping the service life of minority carriers of the silicon substrate and reducing the damage of the high-temperature process to the N-type silicon substrate. Meanwhile, the battery with the IBC structure enables a battery plate to fully utilize the solar spectra so as to maximally improve the short-circuit current density of the battery; and the stability of the solar battery is improved due to no P-type heavily doped region exists.

Disclosed is an electron donating organic material that can provide a photovoltaic element with a high photoelectric conversion efficiency. The electron donating organic material comprises a benzothiadiazole compound satisfying requirements that (a) a benzothiadiazole skeleton and an oligothiophene skeleton are contained, (b) the bandgap (Eg) is not more than 1.8 eV, and (c) the level of the highest occupied molecular orbital (HOMO) is not more than -4.8 eV. In the benzothiadiazole compound, the benzothiadiazole skeleton and the oligothiophene skeleton are alternately covalently bonded. The benzothiadiazole skeleton : oligothiophene skeleton ratio is in the range of 1 : 1 to 1 : 2 excluding 1 : 1. The number of thiophene rings contained in one oligothiophene skeleton is 3 or more and 12 or less.

The invention belongs to the technical field of polymer solar cells and particularly relates to an inverted semitransparent polymer solar cell and a preparation method thereof. The inverted semitransparent polymer solar cell is based on a one-dimensional photonic crystal which is composed of high and low refraction index materials WO3 and LiF and serves as a back reflecting mirror. The method comprises the steps of firstly, growing a layer of uniform and compact N-type TiO2 film on a conductive glass substrate; secondly, conducting spin-coating of a layer of a P3HT:PCBM solution dissolved by dichlorobenzene, annealing, and then growing WO3 and Ag sequentially; and finally, on a semitransparent silver electrode, growing the [WO3 / LiF]N one-dimensional photonic crystal. The semitransparent polymer solar cell which is prepared by the method solves the problems that traditional semitransparent solar cells are high in transmittance and low in efficiency. By the aid of a high-reflection film structure of the [WO3 / LiF]N one-dimensional photonic crystal, the reflection and the absorption of light of specific wavelengths can be facilitated, the contradiction between the efficiency and the transmittance of semitransparent cells can be eliminated, and the energy conversion efficiency can be effectively improved.

The present invention discloses a method for preparing a laser grooving gate-buried electrode solar cell, comprising: a) texturing a silicon wafer by an alkaline solution; b) performing light phosphorous diffusion to form a N+ layer; c) generating a thermal oxidation passivated film; d) grooving by a laser so as to obtain a slot; e) etching the slot; f) cleaning the slot; g) performing heavy phosphorous diffusion to form a N++ layer; h) evaporating and plating an aluminum film on the back surface; i) sintering the back surface to form an electric field; j) chemically plating silver to bury a gate; k) making a back electrode; l) evaporating and plating two antireflection layers on the front surface, the two antireflection layers comprising an MgF2 layer and a ZnS layer; m) acid etching to remove the edge; and n) sintering at a high temperature to form a laser grooving gate-buried electrode solar cell. Accordingly, the present invention further provides a laser grooving gate-buried electrode solar cell prepared by the aforementioned preparation method. The method of the present invention can simultaneously achieve the purposes of improving the passivation effect for the front and back surface, reducing contamination of the surfaces caused by metallic impurities, improving the bonding strength between the plated layers and the substrate and greatly decreasing the reflectance and the like.

The invention discloses a high-efficiency ternary organic solar cell which comprises a substrate, a cathode, a cathode modification layer, an active layer, an anode modification layer and an anode. The active layer includes a blend film of a polymer electron donor PBDB-T and two types of micro-molecular electron acceptors HF-PCIC and IEICO-4F. The morphology of the active layer is optimized via complementary absorption of the PBDB-T, HF-PCIC and IEICO-4F, especially IEICO-4F. The prepared ternary organic solar cell realizes excellent photoelectric response in the wide spectrum range of 300-1000nm, and compared with a binary organic solar cell based on PBDB-T:HF-PCIC, the short-circuit current density is improved by 7.2MA / cm2, and the highest power conversion efficiency PCE reaches 11.2% which is 8.82% higher than that of the binary cell. In addition, the ternary organic solar cell has a very low energy loss (0.59eV), so that the cell has a higher open-circuit voltage.

The invention relates to a preparation method for a scattering layer of a dye-sensitized solar battery. The preparation method comprises the following steps of: (1) mixing titanium tetrachloride and a salt solution, and then conducting the hydro-thermal reaction on the titanium tetrachloride and the salt solution in a reaction kettle, thus obtaining titanium oxide scattering microspheres; (2) transferring the titanium oxide microspheres into a mortar, adding a pore-forming agent and a solvent in the mortar in sequence, and grinding the mixture for 0.5-3h to obtain uniform slurry; and (3) coating a layer of scattering layer slurry on a small particle base layer of the dye-sensitized solar battery by adopting a screen printing method or a blade coating method, sintering at the temperature of 400 DEG C-500 DEG C, and finally obtaining the scattering layer of the dye-sensitized solar battery. According to the method, the provided process is simple and convenient, the used raw materials are wide in source, a surface active agent does not need to be used, and the cost is low; and due to the provided large-particle scattering layer, the light absorbing capability of the photoanode of the battery is improved, simultaneously, the dye absorbing amount is increased, and the scattering layer has an industrial application prospect.

The invention discloses an inversion organic thin film solar cell decorated by a polar solvent and a preparing method of the inversion organic thin film solar cell and relates to the field of organic polymer photovoltaic devices or organic semiconductor thin film solar cells. An inversion structure is adopted in the solar cell. The solar cell comprises a substrate, a transparent conductive cathode ITO, a cathode buffer layer, a light active layer, an anode buffer layer, a polar solvent buffer layer and a metal anode. The polar solvent buffer layer is added to the portion between the anode buffer layer and the light active layer of the solar cell, the conductivity of the anode buffer layer can be effectively improved, the series resistance of devices is reduced, the carrier transporting efficiency is improved, and the photoelectric conversion efficiency of the solar cell is finally improved.

The invention discloses a ternary all-polymer solar cell and belongs to the technical field of photovoltaics. A non-fullerene small molecule receptor with strong crystallinity is added to an optical active layer of a binary all-polymer solar cell as a third component. An inversion structure is adopted by the cell; and the optical active layer is prepared from the following components in percentages by weight: 41.6-50% of an electron donor, 41.6-50% of an electron receptor and 0-16.6% of the non-fullerene small molecule receptor with the strong crystallinity. A non-fullerene small molecule receptor material with strong crystallinity is added to the optical active layer, so that spectral absorption is widened, phase separation is improved and bimolecular charge recombination can be inhibited, thereby causing more effective charge generation and transportation, improving the short-circuit current density of a device and finally improving the photoelectric conversion property of the device. The ternary all-polymer solar cell disclosed by the invention has the advantages of being high in photoelectric conversion property, simple in preparation process, short in process and low in cost.

The invention relates to a triazole ionic liquid-doped perovskite solar cell and a preparation method thereof. According to the preparation method, [EATZ]I is added into a perovskite precursor MAI solution, and a light-absorbing layer film is prepred through a spin-coating method, which is called an MA / EATZ method (E represents ethyl) for short. Because -NH2 in ionic liquid contains lone pair electrons, the unsaturated Pb<2+> defects in perovskite films can be effectively passivated under the action of a Pb-N coordination bond, and charge recombination is inhibited; in addition, due to the formation of the Pb-N coordination bond, the probability is provided for the self-assembly behavior of hydrophilic ILs on the surface of the perovskite, so that alkyl chains in the ILs are almost vertically distributed along the surface of the perovskite, and the improvement of the humidity stability of the perovskite solar cell is successfully realized. Meanwhile, due to the excellent hydrophilic performance of the ILs, the hydrophilicity of the perovskite precursor solution on the surface of a titanium dioxide electron transport layer is improved, and crystal nucleus formation and crystal growth are facilitated. And the crystallization rate of the perovskite in the thermal annealing process is reduced, so that the growth of large-size crystal grains is caused.

The invention relates to a high-efficiency planar heterojunction perovskite thin-film solar cell and a preparation method thereof. A method called a "CB / HTM processing method" (that is the "CB / ETM processing method" in the anti-structural PSCs) is used for the treatment of a perovskite thin film. In the method, a chlorobenzene solution containing a hole transport material (an electron transport material in the anti-structural PSCs) is added during the spin-coating of a perovskite precursor solution, afterwards, the heat annealing is performed, and then, the spin coating of a hole transport layer (the electron transport layer in the anti-structured PSCs) continues so that a mixed layer of a perovskite layer and the hole (or electron) transport material that penetrates through each other isformed between the perovskite layer and the hole (or electron) transport layer to allow the perovskite layer to be in closer contact with the hole (or electron) transport layer. Thus, the electrical properties of the PSCs are improved.

The invention belongs to the field of an organic polymer solar battery, and provides a polymer solar battery based on solvent doping, and a preparation method thereof, for improving the performance and efficiency of a polymer solar battery. The polymer solar battery is formed by successively overlapping an anode electrode, a cavity transmission layer, an active layer, an electron transmission layer and a cathode from bottom to top, wherein a solvent additive is added to the mixed material solution of the active layer, and the solvent additive is 1-chlorine-4-amylbenzene or 1-bromine-4-amylbenzene; and the additive amount of the solvent additive is as follows: the proportion of the 1-chlorine-4-amylbenzene to a solvent is 5:95, and the proportion of the 1-bromine-4-amylbenzene to the solvent is 1:99. According to the invention, through adding the solvent additive into the mixed material solution of the active layer, the performance of the polymer solar battery, including short-circuit current density, open-circuit voltages, filling factors and the like, is improved, and the efficiency of the polymer solar battery is effectively enhanced.

The invention provides a thin-film solar cell and a preparation method thereof, and belongs to the field of solar cells. The thin-film solar cell comprises a substrate, a transparent conductive thin film, a window layer, a CdTe optical absorption layer, a quantum dot buffer layer and a conductive back electrode, which are sequentially laminated; and the quantum dot buffer layer comprises a SnSe quantum dot buffer layer or a Sb2Se3 quantum dot buffer layer. The SnSe quantum dot buffer layer or the Sb2Se3 quantum dot buffer layer serves as the quantum dot buffer layer; and the energy level of the SnSe quantum dot or the Sb2Se3 quantum dot is different from CdTe, so the light which cannot be absorbed by the CdTe can be absorbed, thereby improving the short-circuit current density. The experimental result of the embodiment shows that the short-circuit current density of the thin-film solar battery provided by the invention reaches 35. 64 mA / cm2; in addition, the thin-film solar cell provided by the invention is simple in structure and suitable for large-scale production.

The invention provides a preparation method and application of a transparent conductive oxide film. According to the preparation method and application of the transparent conductive oxide film, magnetron sputtering technology is adopted; through process regulation and control, the high-efficiency deposition of a high-quality thin film can be realized; the preparation of a transparent conductive oxide film with carrier mobility higher than 60cm<2>V<-1 >s<-1> can be realized under a low-temperature condition; the electrical property of the oxide film is equivalent to that of ITO; and the opticalabsorptivity of the oxide film in a UV-Vis-IR full-wave band range is obviously reduced compared with that of the ITO. The fluorine-doped indium oxide transparent conductive oxide film prepared by the invention has good thermal stability; heat treatment at 250 DEG C or below basically does not cause the deterioration of material properties; the performance of the fluorine-doped indium oxide filmsubjected to proper post-treatment can be further improved; in addition, transition metal elements are not used, and therefore, the performance of the oxide film is stable, and meanwhile, the opticalproperties of the oxide film can be effectively regulated and controlled; and since the transition metal elements are not used, preparation cost is low.

Provided is a method for manufacturing a solar cell. The method comprises the following steps: a photovoltaic conversion structure is provided; an inorganic transparent conductive layer is formed on a surface of the photovoltaic conversion structure; an organic transparent conductive layer is formed on a surface of the inorganic transparent conductive layer; a patterned transparent protection layer is formed on a surface of the organic transparent conductive layer; the patterned transparent protection layer has an opening, and part of the surface of the organic transparent conductive layer is exposed; the organic transparent conductive layer is subjected to an electroplating technology as a crystal seed layer; an electrode is formed in the opening of the patterned transparent protection layer; the electrode and the organic transparent conductive layer contact and are electrically connected. The method can shorten the technology time and lower the cost, reduces reflection, increases the light entering amount effectively, increases the short circuit current density, and further raises the photoelectric conversion efficiency of the solar cell. In addition, the filling factor can be increased, and therefore the photoelectric conversion efficiency of the solar cell is raised.

The invention provides an all-inorganic perovskite solar cell based on a polyaniline and zinc oxide photoactive layer, and a preparation method and application thereof. In particular, organic P-type polyaniline is used as an electron donor and inorganic N-type zinc oxide is used as an electron acceptor, an organic-inorganic hybrid heterojunction is formed by recombination and is used for absorbingphoto-generated carriers excited by long-waveband solar light, and charge separation occurs to a P-N junction and a photoelectric effect is generated. By using the advantages of the wide light absorption range, the adjustable energy band structure and the excellent hole extraction ability of the polyaniline / zinc oxide organic-inorganic hybrid photoactive layer, the spectral response range of an all-inorganic CsPbBr3 perovskite solar cell is greatly broadened and charge recombination is suppressed, thereby improving the photoelectric conversion efficiency of the cell. The polyaniline / zinc oxide organic-inorganic hybrid photoactive layer has a wide light absorption range and good stability. The preparation method is simple, easy to perform and low in cost.

The invention belongs to the technical field of polymer solar batteries, and relates to structural design of an efficient co-mixed ternary organic solar battery based on optical waveband absorption. According to the battery, a silver (gold) nanometer matrix is introduced to a ternary system battery, and an electric field is constrained around a micro structure; by exciting a near field effect, theoptical field is almost permeated into an active layer; the active layer is spin coated on a Ag / Au matrix to naturally form a similar micro-nano grating structure; by exciting surface plasma polaritons, the incident light is limited in the active layer; and by adjusting the micro-nano square matrix period, the metal thin film thickness and the like, an enhanced optical absorption effect can be generated within the ultra-wide range of the ultraviolet light, visible light and near infrared region. Meanwhile, a donor polymer and an acceptor with similar chemical structures and complementary spectral absorption are co-mixed into a solution so as to prepare into a film, so that the absorption spectrum is expanded, the open-circuit voltage, the short-circuit current and a filling factor of a device are substantially improved, the energy conversion efficiency is high, the preparation success rate of the device is high, and the preparation complexity of the device is low.

Disclosed is a conductive back reflection electrode based on a pyramid texture degree morphology ZnO layer. A substrate, a ZnO layer with pyramid surface morphology, a metallic silver layer and a ZnO interface layer form a thin film laminated structure, and the ZnO layer with the pyramid surface morphology is made of intrinsic ZnO or an Al, Ga, B, Mo and W doped ZnO material. A preparation method includes that firstly a ZnO thin film with the pyramid morphology is grown by an ultrasonic spray technology or prepared by a metallorganic chemical vapor deposition technology on the substrate, and then a silver thin film layer and a ZnO thin film interface layer are sequentially prepared. The conductive back reflection electrode based on the pyramid texture degree morphology ZnO layer has the advantages that the light trapping effect is good, wide spectrum and high texture degree reflection can be simultaneously achieved, the light use ratio is high, the preparation method is simple in process and easy to implement, and compared with short-circuit current density of traditional batteries prepared under same conditions and based on texture degree metallic aluminum for achieving texture degree reflection, the short-circuit current density of a thin film solar cell with the back reflection electrode is improved by above 10%.

The present invention relates to a gradient doped AZO thin film preparation method and the application thereof. ITO / AZO thin film 1 / AZO thin film 2 / AZO thin film 3 / P3HT:PCBM is taken as an electric transmission layer in an reversed structure polymer solar battery to improve the structure feature of the AZO thin film and the vertical uniformity of the AZO thin film conductivity and complete the preparation in the atmosphere environment so as to effectively reduce the carrier compound probability in the battery, substantially increase the current density and the filling factors of the battery short circuit and realize the great improvement of the photoelectric conversion efficiency. The gradient doped AZO thin film preparation method is simple and easy to operate and is compatible to the commercialization large-scale production preparation technology so as to accelerate the industrialization process of the reversed structure polymer solar battery and satisfy the requirement of society.