11results about How to "Increase short circuit current density" patented technology

The application belongs to the field of organic photovoltaics, and relates to a kind of polymer photovoltaic material and its preparation method and application. Double bromide compound A and double side tin compound B are subjected to Stille cross coupling reaction under the action of palladium catalyst, and the polymer photovoltaic material is obtained. The polymer photovoltaic material prepared by the application has an ultra-wide absorption spectrum range from 300 nm to 1200 nm. Such material exhibits an ultra-wide spectral range and a high extinction coefficient, and embodies excellent light absorption capacity. The strong light absorption capacity of the polymer photovoltaic material prepared by the application will help to improve the device efficiency of organic photovoltaics and improve the energy conversion efficiency of the device. The polymer photovoltaic material prepared by the application provides reference value for the design of functional materials in many fields of organic photoelectricity and solar energy utilization and conversion.

This invention discloses a class of porphyrin-based A-D-A type polymer photovoltaic materials, their preparation methods, and applications. The invention utilizes a porphyrin-DPP system constructed through Sonogashira coupling, placing the donor unit at the center of the A-D-A structure. This A-D-A structure more effectively enhances the intramolecular push-pull electronic effect, promoting intramolecular charge transfer and thus significantly broadening and redshifting the light absorption range of the polymer. Furthermore, the A-D-A structure facilitates more ordered and compact intermolecular stacking, promoting the expansion of π-π conjugation and potentially increasing the carrier mobility of the material. This lays the material foundation for obtaining higher short-circuit current densities and fill factors in devices.

The invention discloses a solar cell and a preparation method thereof and a solar cell module, the solar cell comprises a semiconductor substrate, the semiconductor substrate comprises a first surface and a second surface which are oppositely arranged along the thickness direction of the semiconductor substrate, the first surface of the semiconductor substrate is sequentially provided with a tunneling oxide layer, a doped polycrystalline silicon layer, a first transparent conductive layer and a first electrode, and the second surface of the semiconductor substrate is provided with a second transparent conductive layer; the second surface of the semiconductor substrate is sequentially provided with an intrinsic amorphous silicon layer, a doped amorphous silicon layer, a second transparent conductive layer and a second electrode, the thickness of the doped polycrystalline silicon layer is less than 10nm, and the doped polycrystalline silicon layer is subjected to hydrogen passivation. The thickness of the ultra-thin doped polycrystalline silicon layer is smaller than 10 nm, the parasitic absorption problem of the doped polycrystalline silicon layer can be remarkably reduced, meanwhile, the carrier transmission resistance is reduced, meanwhile, the doped polycrystalline silicon layer is subjected to hydrogen passivation, the passivation effect of the ultra-thin doped polycrystalline silicon layer can be remarkably improved, and the service life of the ultra-thin doped polycrystalline silicon layer is prolonged. The passivation effect of the doped polycrystalline silicon layer does not need to be improved by increasing the thickness of the doped polycrystalline silicon layer.

The application provides a perovskite solar cell doped with 3-amino-2-thiophene methyl formate and a preparation method thereof. The amino group, the ester group, the nitrogen atom, the oxygen atom and the sulfur atom on the thiophene in the 3-amino-2-thiophene methyl formate can be coordinated with cation and anion vacancy defects in the perovskite to synergistically passivate defects on the surface and the grain boundary of the perovskite crystal, reduce trap state density, inhibit non-radiative recombination of the perovskite film and prolong carrier lifetime. The introduction of the dopant can promote the growth of a high-quality perovskite film, obtain a perovskite film with better crystallinity and fewer grain boundaries, promote light absorption and carrier transport and improve the photoelectric conversion efficiency of the doped perovskite solar cell. The 3-amino-2-thiophene methyl formate can also improve the hydrophobicity of the perovskite film and the aging resistance of the perovskite film under the conditions of light, heating, water vapor and oxygen, and improve the environmental stability, light stability and thermal stability of the doped perovskite solar cell.

The present application relates to the technical field of cathode interface materials, in particular to a non-conjugated acceptor-acceptor type pyrene diimide polymer, a preparation method thereof, a cathode interface material and a semiconductor device. The non-conjugated acceptor-acceptor type pyrene diimide polymer comprises a pyrene diimide unit and a conjugated acceptor unit polymerized with the pyrene diimide in a non-conjugated manner, and the conjugated acceptor unit is selected from the pyrene diimide unit or other electron-deficient acceptor units; the ultraviolet-visible light absorption range of the other electron-deficient acceptor units is 250-650 nm. When the non-conjugated acceptor-acceptor type pyrene diimide polymer is used as a cathode interface material, it not only has a lower LUMO level, but also increases the ultraviolet-visible light absorption range, thereby widening the light absorption range of the solar cell device and improving the short-circuit current density of the solar cell device.

A back contact cell and a preparation method thereof, the back contact cell comprising a silicon wafer, a dielectric layer, a P-type passivation layer, a protruding passivation layer and a P-type electrode, the dielectric layer being arranged on a back light surface of the silicon wafer; the P-type passivation layer and the protruding passivation layer are both arranged on a side of the dielectric layer away from the silicon wafer; wherein the thickness of the protruding passivation layer is less than the thickness of the P-type passivation layer, the protruding passivation layer is formed of a passivation material, and the protruding passivation layer and the P-type passivation layer are in electrical contact; the P-type electrode is electrically connected to the P-type passivation layer, thus, the present application can improve the open circuit voltage and the short circuit current, while ensuring the long-term reliability of the ohmic contact between the electrode and the emitter.

The application provides a perovskite cell based on a fullerene derivative electron transport layer and a preparation method thereof. The inverted structure perovskite cell is obtained by treating fullerene derivative with 2-methylanisole to prepare an electron transport layer. The preparation method has the advantages of being green and harmless by using 2-methylanisole to dissolve fullerene derivative to prepare a thin film. The fullerene derivative thin film prepared by using 2-methylanisole as a solvent is uniform and smooth, and can improve the short-circuit current density of the inverted structure perovskite cell, thereby improving the photoelectric conversion efficiency of the inverted structure perovskite cell.

This invention discloses a thin-film solar cell with synergistic passivation and field-effect modulation functions, and its fabrication method, belonging to the field of solar cell technology. The core of this invention lies in introducing an ultrathin barium titanate (BaTiO3) interlayer between the back electrode and the CZTSSe absorber layer. This interlayer not only passively blocks electron backflow and suppresses interfacial recombination by utilizing its large conduction band offset with CZTSSe, but more importantly, it can induce BaTiO3 absorption during high-temperature selenization. 2+ Cu in CZTSSe + Non-equivalent cation migration and exchange occur, thereby actively constructing a directionally favorable cation migration and exchange-induced built-in electric field (CME-field) within the quasi-neutral region of the absorber layer, synergistically promoting the collection of photogenerated holes. This invention achieves a synergistic effect of "passive blocking" and "active driving," significantly improving battery performance and increasing the photoelectric conversion efficiency of battery devices to 14.00%.

The invention discloses a high double-sided rate TOPCon battery based on a Poly Finger structure and a preparation method thereof. The preparation method comprises the following steps: S1, performing alkali texturing treatment to form a positive pyramid textured surface; s2, performing boron diffusion to form a boron diffusion layer; s3, removing borosilicate glass on the back surface; s4, polishing the substrate; s5, sequentially depositing a silicon dioxide tunneling oxide layer, a phosphorus-doped amorphous silicon layer and a silicon dioxide mask layer on the back surface; s6, performing annealing crystallization to obtain a phosphorus-doped polycrystalline silicon layer and a phosphorosilicate glass layer; s7, the phosphorosilicate glass is loosened through picosecond laser; s8, performing surface etching to form a Poly Finger structure; s9, polishing the back surface; s10, performing ink jet etching on a non-grid line area, and cleaning to obtain an inverted pyramid light trapping structure; s11, preparing an aluminum oxide passivation layer; s12, coating the front and back surfaces; and S13, preparing an electrode. The product prepared by the invention can significantly improve the back efficiency and the cell double-sided rate.

This application relates to the field of photovoltaic technology, and particularly to perovskite solar cells, tandem solar cells, and photovoltaic modules. The perovskite solar cell includes a perovskite light-absorbing layer, which comprises perovskite material and amino-functionalized polymer additives. The perovskite material includes materials with the general formula ABX3, where A ions are monovalent cations and B ions include Pb. 2+ The X ion is a monovalent anion; the amino-functionalized polymer additives include at least one selected from polyethyleneimine, polypropyleneimine, amino-functionalized polyetherimide, amino-functionalized polyvinylpyrrolidone, amino-functionalized polyvinyl alcohol, amino-functionalized polyacrylic acid, and amino-functionalized polyquaternary ammonium salt. This application adds amino-functionalized polymer additives to the perovskite light-absorbing layer to passivate defects at perovskite grain boundaries, reduce surface state density, prolong carrier lifetime, increase short-circuit current density, enhance the bending resistance of the perovskite light-absorbing layer, and improve the environmental stability of the device.

The application discloses a flexible perovskite solar cell based on an oleylamine chlorine passivation agent and a preparation method thereof, and relates to the technical field of solar cells. The solar cell comprises, from bottom to top, a flexible substrate, an electron transport layer, a perovskite light absorption layer, an oleylamine chlorine interface passivation layer, a hole transport layer and a gold electrode layer. In the preparation, after the perovskite light absorption layer is formed, an oleylamine chlorine solution is coated on the surface of the perovskite light absorption layer by using a low-temperature solution spin coating method, and the passivation layer is obtained through heating and drying. The chloride ions in the oleylamine chlorine molecules directly passivate uncoordinated defects on the surface of the perovskite, inhibit non-radiative recombination and optimize energy level matching. Meanwhile, the long-chain alkyl groups in the molecules construct a hydrophobic barrier layer to block the environmental water and oxygen erosion. Through simple interface engineering modification, the application improves the photoelectric conversion efficiency and environmental stability of the device, and the process is matched with the flexible substrate, which is beneficial to large-scale production.