HIT solar energy battery and method for improving short-circuit current density of HIT battery

A solar cell and battery technology, which is applied in the field of solar cells to achieve the effects of improving short-circuit current density and convenient preparation

Active Publication Date: 2015-06-24
德运创鑫(北京)科技有限公司
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0006] The present invention provides a HIT battery to solve the above-mentioned problems existing in existing solar cells
[0007] The present invention provides a kind of method that improves HIT battery short-circuit current density in addition, to solve existing above-mentioned problem

Method used

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Embodiment Construction

[0030] The invention provides a HIT battery, which is a heterojunction amorphous silicon / crystalline silicon heterojunction solar battery, and is a hybrid solar battery made by using a crystalline silicon substrate and an amorphous silicon thin film. The photoelectric conversion efficiency of the solar cell is high, and the preparation technology is simple, which is the development trend of solar cells in the photovoltaic industry in recent years.

[0031] Although the photoelectric conversion efficiency of traditional HIT solar cells is high, the window layer on the light incident surface uses a high-performance P-type doped layer, and the preparation of high-performance P-type materials is very difficult, and at the same doping concentration , the light / dark conductivity and bandgap of the window layer are lower than those of the N-type doped layer, and the two parameters of light / dark conductivity and bandgap directly affect the short-circuit current density of the battery a...

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Abstract

The invention discloses an HIT solar energy battery and a method for improving the short-circuit current density of the HIT battery. The HIT solar energy battery comprises a substrate layer, a first intrinsic layer and a second intrinsic layer which are arranged on the two sides of the substrate layer, an N-shaped doping layer arranged on the first intrinsic layer on the lighted side of the substrate layer and a P-shaped doping layer arranged on the second intrinsic layer on the backlight side of the substrate layer, a front electrode is arranged on the N-shaped doping layer, and a back electrode is arranged on the P-shaped doping layer. According to the HIT solar energy battery and the method for improving the short-circuit current density of the HIT battery, the N-shaped doping layer serves as a window layer of an lighted face, and the problem that high-performance P-shaped materials are not easy to prepare when serving as the window layer is avoided; the N-shaped doping layer serves as the window layer, the preparation is convenient, the conductivity is 1-10 <-5>s / cm, the band gap is larger than 1.8eV, and therefore the short-circuit current density of the battery is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a HIT solar cell. In addition, it also relates to a method for increasing the short-circuit current density of the HIT battery. Background technique [0002] Hetero-junction with Intrinsic Thin layer solar cell (hereinafter referred to as HIT solar cell) is a heterojunction amorphous silicon / crystalline silicon heterojunction solar cell, which is a hybrid type made of crystalline silicon substrate and amorphous silicon film. Solar battery. Due to its high photoelectric conversion efficiency, low temperature coefficient and relatively simple preparation technology, HIT solar cells have become a popular technology in the research and development of the photovoltaic industry in recent years, and are currently one of the mainstream high-efficiency solar cell technologies. [0003] figure 1 For the structure of a traditional HIT solar cell, 104 is an N-type (or P-type) monocrys...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/074H01L31/0288H01L31/18H01L31/20
CPCH01L31/0288H01L31/074H01L31/1804H01L31/202Y02E10/547Y02P70/50
Inventor 郁操杨少飞杨苗张津燕徐希翔
Owner 德运创鑫(北京)科技有限公司
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