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Gradient doped AZO thin film preparation method and application thereof

A gradient doping and thin film technology, applied in the field of solar cells, can solve the problem of uneven longitudinal distribution of electrical conductivity of the AZO electron transport layer, and achieve the effect of reducing the probability of carrier recombination, the method is simple and feasible, and the process of industrialization is accelerated.

Active Publication Date: 2016-08-31
ZHEJIANG OCEAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a simple, easy to control, low preparation cost in order to solve the problem of uneven longitudinal distribution of the conductivity of the AZO electron transport layer in an inverted structure organic polymer battery, which can be used at a lower temperature, in the air, Preparation method and application of gradient doped AZO thin film prepared in large area

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  • Gradient doped AZO thin film preparation method and application thereof
  • Gradient doped AZO thin film preparation method and application thereof

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Embodiment 1

[0028] A preparation method of gradient doped AZO film, said preparation method comprising the following steps:

[0029] a) Weigh 1 gram of zinc acetate dihydrate and 0.01-0.1 gram of aluminum nitrate nonahydrate and dissolve them in 10 ml of ethanol solution; add 0.1 ml of monoethanolamine into the solution to prepare Al-Zn atomic ratios of 0.1at% precursor solution A, 0.6at% precursor solution B and 1.1at% precursor solution C, stir the prepared solution at 20°C for 0.1h, age at room temperature for 24h, and set aside;

[0030] b) Spin-coat the precursor solution A on the cleaned and dried ITO glass substrate, the speed of the homogenizer is 2000rpm, the spin-coating time is 10s, and heat on a hot plate at 200°C for 30min to obtain AZO film 1; AZO film One has a thickness of 5 nm;

[0031] Precursor solution B is spin-coated on AZO film 1, and the preparation method of AZO film 1 is repeated, and AZO film 2 is prepared; Precursor solution C is dropped on the surface of AZO ...

Embodiment 2

[0035] A preparation method of gradient doped AZO film, said preparation method comprising the following steps:

[0036] a) Weigh 2 grams of zinc acetate dihydrate and 0.01-0.1 grams of aluminum nitrate nonahydrate and dissolve them in 20 milliliters of ethanol solution; take 0.2 milliliters of monoethanolamine and add it to the solution to prepare Al-Zn atomic ratios of 0.2at% precursor solution A, 0.7at% precursor solution B and 1.2at% precursor solution C, stir the prepared solution at 50°C for 0.5h, age at room temperature for 24h, and set aside;

[0037] b) The ITO glass substrate is immersed in the adhesion promoting solution and treated with ultrasonic for 50 minutes; then taken out and added with acetone for ultrasonic treatment for 20 minutes, rinsed with deionized water after taken out, and then dried with nitrogen gas;

[0038] The adhesion promoting liquid is composed of the following raw materials in parts by weight: 12 parts of hydroxyethyl cellulose, 25 parts of...

Embodiment 3

[0045] A preparation method of gradient doped AZO film, said preparation method comprising the following steps:

[0046] a) Weigh 3 grams of zinc acetate dihydrate and 0.01-0.1 grams of aluminum nitrate nonahydrate and dissolve them in 30 milliliters of ethanol solution; add 0.5 milliliters of monoethanolamine to the solution to prepare Al-Zn atomic ratios of 0.5at% precursor solution A, 1.0at% precursor solution B and 1.5at% precursor solution C, stir the prepared solution at 80°C for 1h, age at room temperature for 24h, and set aside;

[0047] b) The ITO glass substrate is immersed in the adhesion promoting solution, and ultrasonically treated for 60 minutes; then taken out and added with acetone and ultrasonically treated for 30 minutes, rinsed with deionized water after taking out, and then dried with nitrogen gas;

[0048] The adhesion promoting liquid is composed of the following raw materials in parts by weight: 15 parts of hydroxyethyl cellulose, 35 parts of methyl ort...

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Abstract

The present invention relates to a gradient doped AZO thin film preparation method and the application thereof. ITO / AZO thin film 1 / AZO thin film 2 / AZO thin film 3 / P3HT:PCBM is taken as an electric transmission layer in an reversed structure polymer solar battery to improve the structure feature of the AZO thin film and the vertical uniformity of the AZO thin film conductivity and complete the preparation in the atmosphere environment so as to effectively reduce the carrier compound probability in the battery, substantially increase the current density and the filling factors of the battery short circuit and realize the great improvement of the photoelectric conversion efficiency. The gradient doped AZO thin film preparation method is simple and easy to operate and is compatible to the commercialization large-scale production preparation technology so as to accelerate the industrialization process of the reversed structure polymer solar battery and satisfy the requirement of society.

Description

technical field [0001] The invention relates to the technical field of solar cells in new energy sources, in particular to a simple, easy-to-control, low-cost preparation method for preparing a gradient-doped AZO thin film that can be prepared at relatively low temperatures, in the air, and on a large area, and its application . Background technique [0002] In today's society, the rapid economic development has brought serious problems such as energy crisis and global warming. The development and utilization of renewable clean energy has attracted widespread attention from all over the world. Different from traditional energy sources such as coal, oil, and natural gas, solar energy is a green, clean, and renewable energy source that is inexhaustible and has the potential to become an important part of supply. As a photoelectric conversion device, solar cells have received more and more attention in their research and application. Compared with expensive silicon-based sola...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/00H10K30/451Y02E10/549
Inventor 余璇于晓明陈立桥潘洪军
Owner ZHEJIANG OCEAN UNIV
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