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This invention belongs to the field of oral care technology and provides a bismuth microsphere oral care agent that eliminates halitosis and has anti-inflammatory and antibacterial properties. The agent comprises a bismuth complex, wherein the bismuth complex is a porous bismuth microsphere selected from Bi2O2CO3 and Bi2O2CO3@Bi2S3 heterojunctions. This oral care agent can rapidly respond to the high expression of H2S in periodontitis, eliminating halitosis, inhibiting inflammation, and regulating the periodontal microenvironment. Simultaneously, the (Bi2O2CO3) microspheres react with H2S to form Bi2O2CO3@Bi2S3 heterojunctions in situ, which can efficiently kill bacteria under light irradiation.

This invention discloses a spherical powder of tantalum-tungsten alloy and its preparation method and additive manufacturing method, belonging to the field of refractory metal material preparation technology. The preparation method includes: subjecting a homogeneous tantalum-tungsten alloy ingot to a three-stage hydrogenation treatment, sequentially holding at 0.01~0.04 MPa and 300~500℃ for 1~3 h, at 0.04~0.08 MPa and 900~1000℃ for 0.5~1 h, and at 0.02~0.05 MPa and 300~400℃ for 0.5~1.5 h. This segmented hydrogenation process controls the diffusion behavior of hydrogen in the alloy, achieving controlled embrittlement and avoiding over-hydrogenation. Further, multi-cycle crushing and dynamic sieving based on the target particle size range are performed to obtain hydride precursor powder, significantly reducing ineffective fine powder and improving the yield and production efficiency of the plasma spheroidization process. The resulting tantalum-tungsten alloy spherical powder has a sphericity of not less than 99%, an oxygen content of not more than 150 ppm, and a concentrated particle size distribution. It is suitable for additive manufacturing processes such as laser selective melting and electron beam selective melting, providing a reliable raw material for the forming of high-performance tantalum-tungsten alloy components.