The application provides a manufacturing method of a
semiconductor structure, which deposits a
titanium-
tungsten alloy layer on the surface of an aluminum pad as a sacrificial protective layer, so as to reduce the contact opportunity of
fluorine ions and the aluminum pad, thereby avoiding the generation of
aluminum fluoride and reducing the residue of
fluorine ions on the surface of the aluminum pad; in the subsequent
wet cleaning step, all by-products generated in the
etching stage will be removed synchronously with the sacrificial protective layer. The application adopts the
titanium-
tungsten alloy layer as the sacrificial protective layer, which is easy to deposit on the surface of the aluminum pad and does not interfere with the properties of the aluminum pad, and the removal condition is more moderate, which will not cause damage to the
passivation layer and the surface of the aluminum pad to be reserved. In addition, for the unopened area of the aluminum pad, the
passivation layer and the upper surface of the aluminum pad are separated by the
titanium-
tungsten alloy layer, due to the
strong interaction between the titanium-
tungsten alloy layer and the aluminum layer, which helps to limit the
diffusion of aluminum, and due to the stable properties and strong
oxidation resistance of the titanium-
tungsten alloy layer, the structure of the edge area of the aluminum pad is more stable.