The invention discloses a high-drive-current III-V metal oxide semiconductor device which comprises a single crystal substrate, a buffer layer, a quantum-well bottom barrier layer, a planar doped layer, a high-mobility quantum-well channel, an interface control layer, a high K gate dielectric, an elevated source/drain layer, a metal gate structure and a source/drain contact metal layer, wherein the buffer layer is formed on the upper surface of the single crystal substrate; the quantum-well bottom barrier layer is formed on the upper surface of the buffer layer; the planar doped layer is formed in the quantum-well bottom barrier layer; the high-mobility quantum-well channel is formed on the upper surface of the quantum-well bottom barrier layer; the interface control layer is formed on the upper surface of the high-mobility quantum-well channel; the high K gate dielectric and the elevated source/drain layer are formed on the upper surface of the interface control layer; the metal gate structure is formed on the high K gate dielectric; and the source/drain contact metal layer is formed on the elevated source/drain layer. According to the invention, a dangling bond on an MOS (metal oxide semiconductor) interface is passivated by using an interface control layer technology, thereby realizing the low interface state density, reducing the scattering of current carriers in the channel, improving the concentration of two-dimensional electron gas or two-dimensional hole gas in a channel layer, and satisfying the requirements of a high-performance III-V CMOS (complementary metal oxide semiconductor) technology.