The invention belongs to the technical field of power semiconductors, and particularly relates to a high-
voltage low-resistance power
LDMOS. The
LDMOS is mainly characterized by being provided with a field plate structure with a protruding source end and an integrated
diode on the inner side of a drain
electrode, the length of a drift region is shortened, and the device area is not additionally increased. During forward conduction, an integrated
diode is reversely biased, a field plate structure and an N-type drift region form an equivalent
MIS capacitor, a continuous
electron accumulation layer is generated on the surface of the drift region below a gate structure and the field plate structure, an accumulation type transport mode is formed, and the specific on-resistance of the device is greatly reduced; during reverse blocking, the integrated
diode is positively biased, the field plate structure bears surface withstand
voltage, the drift region is assisted to be depleted so as to improve the
doping concentration of the drift region and reduce the specific on-resistance, and transverse
electric field distribution is modulated so as to improve the withstand
voltage of the device. Compared with a traditional
LDMOS, the LDMOS provided by the invention has lower specific on-resistance while realizing high withstand voltage.