Anti-EMI super junction VDMOS device
A device and conductivity type technology, applied in the field of anti-EMI superjunction VDMOS devices, can solve problems such as broadband and electromagnetic pollution, achieve current overshoot mitigation, reduce switching dv/dt and di/dt, and alleviate electromagnetic interference. Effect
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[0021] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0022] Such as figure 1 As shown, an anti-EMI super-junction VDMOS device provided by the first embodiment of the present invention includes a metallized drain 1, a heavily doped first conductivity type semiconductor substrate 2 located on the metallized drain 1, and a semiconductor substrate 2 located on the second A lightly doped first conductivity type semiconductor column 3 on a conductivity type semiconductor substrate 2; a second conductivity type located on the first conductivity type semiconductor substrate 2 and on both sides of the first conductivity type semiconductor column 3 A semiconductor column 4; a high-K dielectric material column 5 located in the first conductivity type semiconductor column 3;
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