A super junction vdmos
A conductive type, semiconductor technology, used in semiconductor devices, electrical components, circuits, etc., can solve problems such as broadband and electromagnetic pollution, and achieve the effects of improving EMI, increasing capacitance, and alleviating electromagnetic interference.
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Embodiment 1
[0021] Such as image 3 As shown, this example includes a metallized drain 1, a heavily doped first conductivity type semiconductor substrate 2 on the metallized drain 1, a lightly doped first conductivity type semiconductor substrate 2 on the first conductivity type conductivity type semiconductor region 3; the lightly doped first conductivity type semiconductor region 3 has a second conductivity type semiconductor body region 5 on both sides of the top; the second conductivity type semiconductor body region 5 is lightly doped with the first conductivity type Miscellaneous JFET region 8; the second conductivity type semiconductor body region 5 has a second conductivity type semiconductor heavily doped contact region 6 and a first conductivity type semiconductor source region 7, the first conductivity type semiconductor source region 7 and the first conductivity type semiconductor The second conductivity type semiconductor body region 5 between the lightly doped JFET regions 8...
Embodiment 2
[0026] Such as Figure 4 As shown, on the basis of Embodiment 1, the semiconductor region 12 of the first conductivity type is added under the semiconductor pillars 42 of the second conductivity type. The upper surface of the first conductivity type semiconductor region 12 is in direct contact with the second conductivity type semiconductor pillar 42 , and the lower surface is flush with the second conductivity type semiconductor pillar 41 , 43 . The doping concentration of the first conductivity type semiconductor region 12 is higher than that of the lightly doped first conductivity type semiconductor region 3 . It is also characterized in that the total amount of impurities in the semiconductor columns 41, 42, 43 of the second conductivity type and the total amount of impurities in the lightly doped semiconductor region 3 of the first conductivity type and the semiconductor region 12 of the first conductivity type satisfy the charge balance.
Embodiment 3
[0028] In this example, on the basis of Embodiment 1, the doping concentration of the second conductivity type semiconductor pillars 42 located in the middle is lower than the doping concentrations of the second conductivity type semiconductor pillars 41 and 43 located on both sides.
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