Manufacturing process of low electromagnetic interference power device terminal structure
A technology that interferes with power and manufacturing process. It is used in semiconductor/solid-state device manufacturing, electrical solid-state devices, and electrical components. It can solve the problem of increasing device process steps, reducing high-frequency and high-amplitude electromagnetic interference, and increasing device switching losses. problem, to achieve the effect of alleviating EMI noise
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[0014] Hereinafter, the terminal structure of the low electromagnetic interference power device of the present invention will be described in detail with reference to exemplary embodiments.
[0015] figure 1 A schematic flow chart of an exemplary embodiment of the manufacturing process of the low electromagnetic interference power device terminal structure of the present invention is shown.
[0016] Such as figure 1 As shown, in an exemplary embodiment of the present invention, the manufacturing process of the low electromagnetic interference power device terminal structure includes the following steps:
[0017] S01, growing a first conductivity type semiconductor epitaxial layer on a first conductivity type semiconductor substrate. The first conductivity type semiconductor epitaxial layer may have a predetermined withstand voltage requirement and a predetermined thickness, for example, the predetermined withstand voltage requirement may be 600V or higher; the predetermined ...
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